JP3294174B2 - Temperature measurement device for wafer holder and wafer storage chamber - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer holder temperature measuring apparatus and a wafer storage chamber, and more particularly to a wafer holder temperature measuring apparatus and a wafer storage chamber applied to a reliability test apparatus.

[0002]

2. Description of the Related Art In a semiconductor inspection process, a large number of semiconductor elements (hereinafter, referred to as "chips") formed on a surface of a semiconductor wafer (hereinafter, referred to as "wafer") are electrically connected to individual chips in a wafer state. Characteristic inspection,
Chips that have no defect in electrical characteristics are screened. The screened good chips are packaged with synthetic resin or ceramic in the assembly process. In the reliability test step, a potential defect or the like of a chip is exposed by applying a thermal or electrical stress to a package product, and a defective product is removed.

[0003] On the other hand, chips are becoming smaller and more highly integrated with the miniaturization and higher functionality of electric products. In addition, recently, various mounting techniques for further miniaturizing semiconductor products have been developed, and in particular, a technique for mounting a chip as a bare chip without packaging the chip has been developed. To put bare chips on the market, bare chips that are guaranteed in quality are required. In order to bring a quality-assured bare chip to market, a reliability test must be performed. A probe device can be used for the reliability test. However, in the case of the probe device, only one wafer can be inspected at a time, and the reliability test of one wafer requires a great deal of time. is there. In addition, in order to inspect bare chips using a conventional burn-in apparatus, it is necessary to solve various difficult points such as electrical connection between the bare chips and the socket, and since handling small bare chips, handling becomes extremely complicated. This may lead to an increase in inspection cost.

[0004] Therefore, a reliability test apparatus capable of performing inspection in a wafer state is desired. In the case of a reliability test apparatus, since a reliability test can be performed on a plurality of wafers simultaneously, the inspection cost can be significantly reduced. Therefore, such a reliability test technique is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 7-231019, 8-56666, and 8-3400.
No. 30 proposes this. In particular, the former two publications propose a technique in which a wafer and a contactor such as a probe sheet are surely brought into contact at one time without being thermally affected during a reliability test. When the reliability test is performed in a wafer state as described above, it is fundamental and extremely important to ensure that the wafer and the contactor are brought into contact with each other accurately at a high temperature with high accuracy. It is also extremely important to raise the temperature of the wafer to the inspection temperature efficiently in the constant temperature bath and to maintain the inspection temperature with high accuracy, as in the case of batch contact between the wafer and the contactor.

[0005]

However, in the case of the conventional reliability test, various techniques for contacting the wafer and the contactor at a time have been proposed. However, there is still a problem that it is difficult to accurately measure the wafer temperature during the inspection, and the reliability of the inspection is reduced accordingly.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to accurately measure the temperature of a wafer at the time of a reliability test, and thereby to increase the temperature of the wafer holder which can improve the reliability of the inspection. It is intended to provide a measuring device. Another object of the present invention is to provide a wafer storage chamber suitable for a reliability test in combination with the above-mentioned wafer holder temperature measuring device.

[0007]

According to a first aspect of the present invention, there is provided an apparatus for measuring the temperature of a wafer holder, the method comprising: bringing a wafer holder holding a semiconductor wafer into contact with a temperature controller; An apparatus for measuring the temperature of said wafer holder when controlling a semiconductor wafer to a predetermined inspection temperature, wherein said wafer holder is provided with at least one recess extending from the back surface to the vicinity of the front surface , A temperature sensor that can be fitted into the temperature control body is provided on the opposite side of the temperature control body from the wafer holding body, and the temperature sensor is supported by an elastic member, and a tip of the temperature sensor is elastically contacted with the concave portion during inspection. It is assumed that.

According to a second aspect of the present invention, there is provided an apparatus for measuring a temperature of a wafer holder, comprising: a wafer holder holding a semiconductor wafer in a collective contact with the contactor in cooperation with a contactor; When the semiconductor wafer is controlled to a predetermined inspection temperature by the temperature controller, a device for measuring the temperature of the wafer holder,
While providing at least one location recess to reach the vicinity of the surface from the back surface to the wafer holder, the temperature sensor with the temperature sensor can be fitted into the concave portion and the wafer holder of the temperature control body provided on the opposite side The temperature sensor is supported by an elastic member, and the tip of the temperature sensor is elastically contacted with the recess at the time of inspection.

According to a third aspect of the present invention, there is provided an apparatus for measuring a temperature of a wafer holder according to the first or second aspect, wherein a spring is provided as the elastic member. It is.

According to a fourth aspect of the present invention, there is provided an apparatus for measuring a temperature of a wafer holder according to any one of the first to third aspects. Is provided with a position detection sensor for detecting whether or not there exists.

The wafer storage chamber according to claim 5 of the present invention cooperates with the contactor to control the temperature of the wafer holder holding the semiconductor wafer in a state of contacting with the contactor at a predetermined inspection temperature. A control body, and a plurality of relay terminals that stand upright around the temperature control body and contact the external terminals of the contactor. The external terminals and the relay terminals are all in contact with each other and formed on the semiconductor wafer. a wafer storage chamber for inspecting leave all semiconductor devices a semiconductor wafer while being, while providing at least one location recess to reach the vicinity of the surface from the back surface to the wafer holder, the temperature sensor can be fitted into the recess The temperature controller is provided on the side opposite to the wafer holder, and the temperature sensor is supported by an elastic member. It is characterized in that to.

A wafer storage chamber according to a sixth aspect of the present invention is the wafer storage chamber according to the fifth aspect, wherein a spring is provided as the elastic member.

According to a seventh aspect of the present invention, in the wafer storage chamber according to the fifth or sixth aspect of the present invention, it is detected whether or not the wafer holder is present in the temperature controller. A position detection sensor is provided.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in FIGS. One embodiment of the wafer holder temperature measuring device of the present invention will be described together with one embodiment of the wafer storage chamber of the present invention. As shown in FIG. 1, the wafer storage chamber 1 of the present embodiment is formed in a flat rectangular shape as a whole. The wafer storage chamber 1 is used, for example, mounted in a large number of rows and a plurality of rows in a horizontal state in a reliability test case formed in a rack shape (not shown). And
When performing a reliability test, the wafer is held in a wafer holder
It is called "wafer chuck". ) 2 via contactor 3
Each of the wafer storage chambers 1 is mounted in an integrated state. The state where the wafer and the contactor 3 are integrated means that the test electrodes (hereinafter, referred to as “electrode pads”) of a large number of chips formed on the entire surface of the wafer and the contactors 3 are provided corresponding to these electrode pads. The test terminals (hereinafter, referred to as “electrode pads”) 3 </ b> A collectively come into contact with each other and become conductive. still,
An integrated wafer, wafer chuck 2 and contactor 3 will be referred to as a shell 4 hereinafter for convenience.

The wafer storage chamber 1 will be described.
As shown in FIG. 1, the wafer storage chamber 1 includes a temperature control chamber 1A and a connector chamber 1B adjacent to the temperature control chamber 1A, and both of them are shut off by a heat insulating wall (not shown). The heat insulation wall prevents the temperature of the connector chamber 1B from rising as much as possible. In the temperature control chamber 1A, the temperature of the wafer W is controlled to the inspection temperature as described later, and the temperature around the wafer W is prevented from rising as much as possible.

At the four corners of the base 5 in the temperature control chamber 1A, cylinder mechanisms 6 are provided, and the upper ends of the cylinder rods of the cylinder mechanisms 6 are respectively provided with pressing plates provided above the base 5. 7 are connected to the four corners. A clamp mechanism (not shown) is provided on the back surface of the pressing plate 7, and receives the shell 4 via the clamp mechanism.
In the connector room 1B, a connector and a wiring board for connecting to a tester (not shown) are provided.

As shown in FIG. 2, the base 5 and the pressing plate 7
A base plate 8 is disposed in parallel with the base 5, and a circular hole 8 A is formed substantially in the center of the base plate 8.
Are formed. Inside the hole 8A, a temperature controller having a slightly smaller diameter than the hole 8A is disposed on the base 5 as a bottom jacket 9, and its upper surface is substantially flush with the upper surface of the base plate 8. 1 and 2
As shown in FIG.
(For example, 2000 to 3000) of pogo pins 10 as ring terminals are arranged in a plurality of rows in a ring shape. These pogo pins 10 are provided corresponding to a large number of external terminals (hereinafter, referred to as “connection pads”) 3B arranged in a ring around the electrode pads 3A of the contactor 3, and are electrically connected to the connection pads 3B at the time of contact. Is electrically conductive. Therefore, when the shell 4 conveyed via the not-shown conveyance mechanism is received via the clamp mechanism in the temperature control chamber 1A, the cylinder mechanism 6 is driven to lower the shell 4 via the pressing plate 7, and the bottom When the wafer reaches the jacket 9, the wafer chuck 2 is placed on the back side of the bottom jacket 9
Contact pads 3B of the contactor 3
Are in electrical contact with the pogo pins 10. In this state, the temperature of the wafer chuck 2 is controlled by the bottom jacket 9 and the temperature of the wafer W is controlled to a predetermined inspection temperature (for example, 110 ° C.).

The wafer chuck 2 is shown in FIG.
As shown in (b), the main body is a chuck body 21 formed in a disk shape, and the chuck body 21 is configured to be integrated with the contactor 3 while holding the wafer W. A gas passage 21A is formed in the chuck body 21 as shown in FIG. And gas flow path 2
A gas supply pipe 22 is connected to the inlet of 1A (opened on the peripheral surface of the main body), and a gas discharge pipe 23 is connected to the outlet (opened adjacent to the inlet on the peripheral surface of the main body). A predetermined gas (a chemically inert gas, for example, a nitrogen gas) is supplied and discharged through the two pipes 22 and 23.

As shown in FIGS. 3A and 3B, a plurality of ring-shaped grooves 21 are formed on the upper surface of the chuck body 21.
B and 21C are formed concentrically (only two ring grooves are shown in the figure), and these ring grooves 21 are formed.
B and 21C have openings 21E communicating with the gas flow path 21A.
Are formed at a plurality of locations. Also, the chuck body 21
A seal ring 24 made of a highly flexible elastic member such as silicon rubber is attached near the outer periphery of the upper surface. When the wafer chuck 2 and the contactor 3 are integrated, the seal ring 24 keeps the inside airtight. It is. Therefore, when the contactor 3 and the wafer chuck 2 overlap and the pressure between the two 2 and 3 is reduced by the inert gas via the gas supply pipe 22 and the gas discharge pipe 23, the two 2 and 3 are integrated and do not come off. Also, both pipes 22 and 23 are provided with built-in valve mechanisms 22A and 23A shown in (c) in the figure, and after supplying nitrogen gas and evacuating to reduce the pressure between the wafer chuck 2 and the contactor 3, , Each gas supply and exhaust pipe 22,
From 23, gas pipe or vacuum exhaust pipe (both not shown)
When the valve is removed, the springs of the valve mechanisms 22A and 23A operate, the valve moves to the right from the position shown in the same figure, shuts off the entrance and exit, prevents the inflow of air, and maintains the internal depressurized state. Has become.

In the state where the wafer chuck 2 and the contactor 3 are integrated as described above, all the electrode pads P of the wafer W held by the wafer chuck 2 and the electrode pads 3A of the contactor 3, as shown in FIG. Are brought into contact all at once and are in a conductive state. When the wafer W and the contactor 3 are brought into contact at once, for example, a wafer and contact positioning device (alignment device) already proposed by the present applicant in Japanese Patent Application No. 8-297463 can be used. Using this alignment apparatus, the electrode pad P of the wafer W and the electrode pad 3A of the contactor 3 are used.
And the wafer chuck 2, the wafer W and the contactor 3 are shell 4
And integrated. Before integration as shell 4 FIG.
As shown in (b), the wafer W is transferred on the wafer chuck 2 using the three pins 11A of the main chuck 11 in the alignment apparatus main body.

Therefore, as shown in FIGS. 3A and 3B, the through hole 21 for three pins is formed in the wafer chuck 2.
D are provided at three places between the ring-shaped grooves 21B and 21C. This through hole 21D is formed to be larger than the outer diameter of the three pin 4, and this through hole 21D has
As shown in (d), a cylindrical silicon rubber film 25 having a closed end is disposed, and its base end is formed in a concave portion formed on the back surface side of the chuck body 21 via a packing 26 made of, for example, aluminum. Screwed. Further, an O-ring 27 is mounted on the outer periphery of the packing 26, the airtightness between the wafer chuck 2 and the contactor 3 is maintained by the silicon rubber film 25 and the O-ring 27, and a reduced pressure state between the two 2 and 3 is maintained. It is like that. The tip of the three pin 11A is formed slightly thick and round so as not to damage the silicon rubber film 25. Therefore, when a wafer W is transferred on the wafer chuck 2 placed on the main chuck 11, the three pins 11A of the main chuck 11 are raised and fitted into the through holes 21D of the wafer chuck 2, and thereafter the three pins 11A are (B) of FIG.
Even if it protrudes as shown by the one-dot chain line, the reduced pressure state between the wafer chuck 2 and the contactor 3 is maintained.

Further, as shown in FIGS. 2, 4 (a) and 4 (b), the contactor 3 comprises an anisotropic conductive sheet 31 in which conductors 31B are arranged in a matrix on a silicon rubber sheet 31A. An electrode pad 3A which surely comes into contact with each conductor 31B of the anisotropic conductive sheet 31, a connection pad 3B formed corresponding to the electrode pad 3A, and a multi-layered wiring 32 connecting these two electrode pads.
B, and both of them,
32 is formed as an integral body. Then, in a state where the contactor 3 and the wafer W are integrated, the electrode pads P of the chip T and the electrode pads 3A of the wiring board 32 are electrically connected to each other via the conductor 31B of the anisotropic conductive sheet 31. I have. The wiring substrate 32 is made of a material having a thermal expansion coefficient substantially equal to that of the wafer W (for example, ceramic such as quartz glass).
The internal wiring 32B is made of a material having excellent conductivity such as aluminum. The conductor 31B is a metal fine particle, and the contactor 3
When the silicon rubber sheet 31A is pressed against the wafer W, the metal particles come into contact with each other due to the compression of the silicon rubber sheet 31A so as to be in a conductive state. In order to ensure that the electrode pads P of the chip T and the electrode pads 3A of the wiring board 32 are in contact with the conductors 31B of the anisotropic conductive sheet 31, the conductors 31B are arranged so as to satisfy the following conditions. Even if the anisotropic conductive sheet 31 comes into random contact with the wafer W and the wiring board 32, the conductor 31B surely contacts the electrode pad P of the chip T and the electrode pad 3A of the contactor 3, as shown in FIG. Need to contact The distance A between the adjacent conductors 31B must be smaller than the diameter D of the electrode pads P and 3A as shown in FIG. The interval B between the adjacent electrode pads P and 3A is as shown in FIG.
As shown in FIG.

As shown in FIG. 5, the bottom jacket 9 for controlling the temperature of the shell 4 has a plurality of ring-shaped grooves 9A formed concentrically on the surface similarly to the wafer chuck 2.
And an exhaust passage (not shown) formed therein, and a plurality of holes for connecting the exhaust passage and the ring-shaped groove 9A, and the shell 4 is placed on the bottom jacket 9. When vacuum evacuation is performed by a vacuum evacuation device (not shown) through an evacuation passage, the shell 4 is vacuum-adsorbed by the ring-shaped groove 9A. Also, the bottom jacket 9
For example, as shown in FIG. 6, a surface heater 91 and a first cooling jacket 92 are built in, and the shell 4 mounted on the bottom jacket 9 is controlled to a predetermined inspection temperature. The surface heater 91 is arranged on the front side of the bottom jacket 9, and the first cooling jacket 92 is arranged below the surface heater 91. Further, a heat resistance sheet 93 having excellent heat insulating properties such as, for example, ethylene tetrafluoride resin is interposed between the surface heater 91 and the first cooling jacket 92. The thermal resistance sheet 93 prevents the first cooling jacket 92 from being overheated by thermally insulating the first cooling jacket 92 from the surface heater 91, and also prevents an excessive rise in temperature of the surface heater 91, and optimizes the shell 4. The inspection temperature is maintained at a suitable temperature. That is, as shown in FIG. 6, a coolant flow path 92 </ b> A extending over the entire surface is formed inside the first cooling jacket 92, and a coolant (cooling water in this embodiment) flows through the coolant flow path 92 </ b> A. Water may boil in the cooling jacket 92 due to heating by the surface heater 91, and may not function as a refrigerant. Therefore, the heat flow from the surface heater 91 is shut off by the heat resistance sheet 93, the cooling water in the refrigerant flow path is maintained at 70 to 80 ° C., and the optimum cooling capacity can be always exerted.
By controlling the surface heater 91 and the first cooling jacket 92 to the optimum temperature in this way, the shell 4 is always kept at 110 ° C.
Can be held.

The first cooling jacket 92 not only improves the temperature control of the bottom jacket 9 but also improves the temperature.
It also has a function of suppressing a rise in temperature around the first cooling jacket 92. As shown in FIGS. 2 and 7, a second cooling jacket (hereinafter, referred to as "top jacket") 12 is provided on the back surface of the pressing plate 7, and the top jacket 12 is provided with an internal refrigerant flow path. It has a function of cooling the contactor 3 held by the pressing plate 7 with the cooling water flowing through 12A and suppressing an increase in the temperature around these contactors. Therefore, in the temperature control chamber 1A, the bottom jacket 9
In addition to controlling the temperature of the wafer chuck 2, the first cooling jacket 92 and the top jacket 12 suppress a rise in the temperature of the surroundings, thereby suppressing heat radiation from the temperature control chamber 1A as much as possible.

The surface heater 91, the first cooling jacket 92, and the top jacket 12 play respective roles under the control of the wafer temperature controller 13. Therefore, the wafer temperature control device 13 will be described next with reference to FIG. The wafer temperature control device 13 includes a heater temperature control device 14 for controlling the temperature of the surface heater 91 and a refrigerant for controlling the temperature of the cooling water supplied to the first cooling jacket 92 and the top jacket 12, as shown in FIG. And a temperature control device 15.

As shown in FIG. 7, the heater temperature control device 14 includes a temperature measurement device 141 for measuring the temperature of the wafer chuck 2, a detection signal from the temperature measurement device 141, and a preset target value (for example, 110 C)), the first PID controller 1 that transmits a PID control signal based on a deviation from
42, a relay 143 that operates based on the PID control signal of the first PID controller 142, and a heater power supply 144 that controls the temperature of the surface heater 92 based on the operation of the relay 143. In accordance with the deviation from the target value, the temperature of the wafer chuck 2 is quickly heated to the target value to maintain a stable inspection temperature. When there is a deviation between the measured temperature of the wafer chuck 2 and the target value (110 ° C.), the first PID controller 142 sends a PID control signal to the relay 1 according to the deviation.
43 to the heater power supply 144 via the relay 143.
Is controlled by PID so that the surface heater 92 quickly and stably matches the target value.

Further, the refrigerant temperature control device 15 is provided as shown in FIG.
As shown in FIG. 5, a water tank 151 for storing cooling water for the first cooling jacket 92 and the top jacket 12, a cooler 152 having a refrigerant pipe 152 </ b> A inserted into the cooling water in the water tank 151, and a water tank 151. And a second PID controller 154 for performing PID control of the cooler 152 in accordance with a deviation between a detection signal from the temperature sensor 153 and a preset target value. The water temperature is rapidly cooled to the target value in accordance with the deviation between the detection signal and the target value to maintain a stable water temperature. Further, the water tank 151, the first cooling jacket 92, and the refrigerant flow path 92 of the top jacket 12.
A and 12A are respectively provided with an outgoing pipe 155A (FIG. 5).
Is shown by a solid line. ) And the return pipe 155B (FIG. 5).
Are indicated by broken lines. ), And the cooling water is supplied to the water tank 151 through these two pipes 155A and 155B.
And between the first cooling jacket 92 and the top jacket 12. The outgoing pipe 155A branches in two directions on the way, one of which is connected to the inlet of the coolant channel 92A of the first cooling jacket 92, and the other is connected to the inlet of the coolant channel 12A of the top jacket 12. A pump 156 is arranged near the water tank 151 at the branch point of the forward pipe 155A, and the pump 156 circulates the cooling water, and the flow rate of the cooling water in each of the forward path and the return path is measured by the flow meter 157. . When there is a deviation between the measured temperature of the cooling water in the water tank 151 and a target value (for example, 40 ° C.), the second PID controller 154 sends a PID control signal to the cooler 1 according to the deviation.
52, and the PID control of the cooler 152 is performed to adjust the flow rate of the refrigerant in the refrigerant pipe 152A so that the water temperature of the water tank 151 quickly and stably matches the target value. As described above, by optimally controlling the temperature of the cooling water by the refrigerant temperature control device 15, the first cooling jacket 9
2 cools the bottom jacket 9 and its surroundings, and the top jacket 12 cools the contactor 3 and its surroundings, thereby suppressing the temperature rise in the temperature control chamber 1A. In addition, as the refrigerant of the cooler 152, for example, ethylene glycol, water, or the like is used. In FIG. 7, 155C is a return pipe, and 15
Reference numerals 8A, 158B and 158C denote valves. When cooling water is not supplied to the first cooling jacket 92 and the top jacket 12, the valves 158A and 158B are closed and the valve 158C is opened so that the cooling water returns to the water tank 151. .

In the present invention, the wafer chuck 2
The temperature measuring device 141 is specially designed to accurately measure the temperature of the wafer W via the wafer chuck 2 so that the control accuracy of the wafer temperature control device 13 is improved, and the reliability of the reliability test of the wafer W is improved. Is increasing. Therefore, an embodiment of the wafer chuck temperature measuring device according to the present invention will be described with reference to FIGS. As shown in the figure, a temperature measuring device 141 of the present embodiment has a rod-shaped temperature sensor 141 for detecting the temperature of the wafer chuck 2.
A and a cylinder 14 for accommodating a flange-shaped piston portion 141B formed at a base end of the temperature sensor 141A.
1C, and a spring 141D that is elastically mounted in the cylinder 141C and constantly urges the temperature sensor 141A upward, and is provided upright at three places on the base 5. And, the three temperature sensors 141A are shown in FIGS.
As shown in (b), three radially spaced intervals are provided between the center of the bottom jacket 9 and the vicinity of the outer periphery.
It is fitted into the through hole 9B at the location. This temperature sensor 14
1A is configured by inserting a thermocouple into a stainless steel pipe having a closed end, for example. In addition, (a) of FIG.
In FIG. 2B, only the temperature measuring device 141 disposed at the center of the wafer chuck 2 is shown in its entirety, and the other temperature measuring devices 141 are shown.
Only the tip of A is shown.

On the back surface of the wafer chuck 2, three concave portions 2A corresponding to the through holes 9B are formed in the radial direction. The concave portion 2A is formed to a depth reaching the vicinity of the front surface from the back surface of the wafer chuck 2, and the temperature sensor 1A is used for inspection.
41A resiliently contacts the innermost portion of the concave portion 2A, measures the temperature of the wafer chuck 2 at a position as close as possible to the wafer W, and can grasp a temperature very close to the actual temperature of the wafer W. The thickness t from the innermost portion of the recess 2A to the surface of the wafer chuck is set to, for example, 1 mm. Further, a material having excellent thermal conductivity, for example, a metal such as aluminum is used for the wafer chuck 2 so that the temperature gradient from the wafer surface to the inner part 2A is minimized. Accordingly, when the shell 4 is pressed onto the bottom jacket 9 via the pressing plate 7, the shell 4 comes into close contact with the bottom jacket 9 as described later, and when the bottom jacket 9 is lowered in this state, three temperature sensors are used. The tips of the wafer chucks 141A project from the surface of the bottom jacket 9 respectively.
When the bottom jacket 9 descends continuously, the tip of the temperature sensor 141A is inserted into the recess 2A.
And elastically contact the innermost part via a spring 141D to measure the temperature of the wafer chuck 2 at a position closest to the wafer W of the wafer chuck 2 and thereby grasp the temperature substantially equal to the actual temperature of the wafer W. Can be. The temperature sensor 141A moves up and down within a range of, for example, 15 mm via a spring 141D.

As shown in an enlarged manner in FIG. 8C, a position detecting sensor 141E having a U-shaped plane structure is provided on the inner peripheral surface of the cylinder 141C, and the temperature sensor 141 is provided.
When A descends in the direction of the arrow against the spring 141D , the shutter 141F attached to the temperature sensor 141A detects the height of the temperature sensor 141A by blocking the light beam of the position detection sensor 141E. That is, the position sensor 141E allows the temperature sensor 1
By detecting the height of 41A, whether or not the shell 4 is placed on the bottom jacket 9 is detected.

As shown in FIGS. 8A and 8B, a jacket joining device 16 is provided on the bottom jacket 9, and the shell 4 and the bottom jacket 9 are securely joined by the jacket joining device 16. It is like that.
The jacket joining device 16 includes a plurality of long bolts 161 for connecting and supporting the base 5 and the bottom jacket 9 as shown in FIG. Spring 1 to support
62. More specifically, a plurality of through holes 5A corresponding to the plurality of long bolts 161 are formed in the base 5 at equal intervals in the circumferential direction as guide holes, and the long bolt 161 passes through these through holes 5A. Each long bolt 1
The head 161 </ b> B of the base 61 is locked on the back side of the base 5. In addition, recesses into which a plurality of long bolts 161 are fitted are formed at equal intervals in the circumferential direction on the outer peripheral edge of the back surface of the bottom jacket 9, and a through hole is formed at the center of each recess. A female screw part 161A is formed at the tip of the long bolt 161. This tip part fits into the recess of the bottom jacket 9, and the screw 163 inserted into the through hole from the surface of the bottom jacket 9 and the female screw part 161A. It is screwed. Therefore, the long bolt 161 is connected to the bottom jacket 9.
And the head is locked on the back surface of the base 5.

Therefore, as described above, when the shell 4 descends via the pressing plate 7 and reaches the bottom jacket 9, even if the shell 4 is slightly inclined with respect to the surface of the bottom jacket 9, As the shell 4 descends, the springs 162 are gradually compressed, the bottom jacket 9 is corrected by the shell 4, and the bottom jacket 9 is elastically joined to the shell 4 in a state where the bottom jacket 9 is in close contact with the entire surface. 4 is horizontal, so that all the electrode pads 3A of the contactor 3 and the pogo pins 10 are uniformly and uniformly contacted. The expansion and contraction range of the spring 162 is set so that the bottom jacket 9 can be moved up and down within a range of, for example, 10 mm at the time of joining. Also, at the time of joining, the above-described temperature measuring device 1
The spring 141D of No. 4 expands and contracts in a range of 15 mm, so the expansion and contraction range of the spring 141D has a margin of 5 mm with respect to the spring 162. Therefore, even if the bottom jacket 9 lowers by 10 mm at the time of joining, the temperature sensor 141A Can always elastically contact the concave portion 2A of the wafer chuck 2.

As shown in FIG. 9A, a pogo pin block 17 is disposed on the base plate 8 surrounding the bottom jacket 9, and the pogo pin 10 is planted in the pogo pin block 17. Therefore, the pogo pin block 17 will be described in detail. The pogo pin block 17 has a structure radially divided into four parts from the center of a hole 17A facing the bottom jacket 9 as shown in FIG. 9A, for example.
It is formed as. A gap δ of, for example, 1 mm is formed between adjacent block elements 171 so that each gap δ absorbs the thermal expansion of each block element 171. By dividing the pogo pin block 17 into four parts in this manner, the dimensional change due to the thermal expansion of each block element 171 is reduced, and even if the block element 171 thermally expands during the reliability test as shown in FIG. The pogo pin 10 merely moves from, for example, the position indicated by the solid line to the position indicated by the alternate long and short dash line, and is surely in contact with the contact pad 3B without coming off the connection pad 3B. If the pogo pin block 17 ′ is formed from an integral block as shown in FIG. 10A, the pogo pin block 17 ′ is
Since the size is four times larger than 1, the pogo pin block 17 ′
The dimensional change due to thermal expansion is large, and the pogo pin 10 moves from the solid line position to the one-dot chain line position as shown in FIG. . For example, a pogo pin block 17 shown in FIG.
In the case of m and the thickness of 30 mm, the displacement of the outer pogo pin 10 in FIG. 9B was 300 μm, but in the case of the integral pogo pin block 17 ′ shown in FIG. Even if it is the same size as the pogo pin block 17 shown in FIG. 9A, the displacement amount in FIG.
It was 00 μm. Therefore, the pogo pin block 17 is
By dividing, the displacement amount of the pogo pin 10 can be halved, and the pogo pin 10 surely comes into contact with the connection pad 3B of the contactor 3 so that the contact is stable and the reliability of the inspection can be improved. The pogo pin block 17 is preferably formed in a rectangular shape with a synthetic resin such as a polyimide resin containing glass fiber or a polyamideimide resin, and has a coefficient of thermal expansion as close as possible to that of the contactor 3.

A guide hole 171A is formed at a corner of the block element 171.
The block element 171 is positioned at a predetermined mounting position with reference to 71A and a guide hole (not shown) of the base 5 formed corresponding to the guide hole 171A. Further, a plurality of fastening holes 171B for fastening members such as screws are formed in the block element 171. The fastening holes 171B are formed on the base 5 corresponding to the fastening holes 171B with reference to the fastening screw holes. Block element 171
At a predetermined mounting position. Therefore, after passing the guide pin (not shown) through the guide hole 171A of each of the block element 171 and the base 5,
By fastening the block element 171 and the base 5 with a fastening member, the block element 171 can be accurately fixed to a predetermined mounting position. The fastening hole of the block element 171 has room for absorbing a dimensional change due to thermal expansion of the block element 171.

Next, the operation will be described. Before mounting the shell 4 into the wafer storage chamber 1 as shown in FIG.
First, the wafer chuck 2, the wafer W, and the contactor 3 are integrated as a shell 4 using an alignment device. To do this, the wafer chuck 2 is placed on the main chuck 11 of the alignment device as shown in FIG. After placing the wafer chuck 2 on the main chuck 11,
When the wafer W is transferred onto the wafer chuck 2, the three pins 11A of the main chuck 11 rise at this point,
The wafer W is inserted into the through hole 21D of the wafer chuck 2 and protrudes from the surface of the wafer chuck 2 while extending the silicon rubber film 25 as shown by a dashed line in FIG.
Waiting for you. Thereafter, when the wafer W is received by the wafer chuck 2, the three pins 11 </ b> A retreat into the main chuck 11, return to the original position, and place the wafer W on the wafer chuck 2. In parallel with this operation, the contactor 3 is arranged at a predetermined position above the main chuck 11.
Then, the electrode pad P of the wafer W and the electrode pad 3A of the contactor 3 are read by an image pickup device such as a CCD camera (not shown), and the position coordinates of the representative electrode pad P among the electrode pads P of the wafer W are obtained. , Electrode pads 3 of contactor 3 corresponding to these electrode pads P
After obtaining the position coordinates of A, the main chuck 11 moves in the X, Y, and θ directions based on these coordinate values to perform the alignment operation of both P and 3A.
The main chuck 2 is raised to bring all the electrode pads P into contact with the corresponding electrode pads 3A at once.

At this point, for example, the wafer chuck 2
Is in a state where nitrogen gas replacement and vacuum exhaust can be performed via gas supply / discharge pipes 22 and 23. Therefore, the gas supply pipe 2
2 supplies nitrogen gas from the wafer chuck 2 and replaces air between the wafer chuck 2 and the contactor 3 with nitrogen. Next, when the nitrogen gas supply source is removed from the gas supply pipe 22, the valve mechanism 2 of the gas supply pipe 22 is removed.
2A and 23A operate to close the gas passage 21A. On the other hand, when vacuum is drawn from the gas exhaust pipe 23,
A, ring-shaped grooves 21B, 21 on the surface of wafer chuck 2
C, the nitrogen gas between the wafer chuck 2 and the contactor 3 is evacuated to vacuum, and the electrode pad P of the wafer W and the electrode pad 3A of the contactor 3 come into contact at once as shown in FIG. As a result, the shell 4 becomes a state in which all chips can be inspected collectively in a wafer state. Even if the height of the electrode pad P varies, the anisotropic conductive sheet 3
1 can absorb variations. Even when the pressure between the wafer chuck 2 and the contactor 3 is reduced as described above, the depressurized space is isolated from the outside by the seal ring 24 around the wafer chuck 2, and the three-pin through-hole 21 D is formed by the silicon rubber film 25. , It is possible to reliably maintain the reduced pressure state.

Thereafter, the shell 4 is unloaded from the alignment device via a transfer mechanism (not shown), transferred to the wafer storage chamber 1 as shown in FIG. After the shell 4 is clamped in the wafer storage chamber 1 by the clamp mechanism, four cylinder mechanisms 6 are provided.
Is driven to push down the shell 4 to the bottom jacket 9 via the pressing plate 7. When the pressing plate 7 descends and reaches the bottom jacket 9, the pressing plate 7 cannot be lowered horizontally by each cylinder mechanism 6, and there is a slight inclination between the shell 4 and the bottom jacket 9. Also, when the shell 4 is joined to the bottom jacket 9, the shell 4 and the bottom jacket 9 come into close contact with each other while absorbing the inclination by the plurality of springs 162 of the jacket joining device 16, and are elastically joined. Then, when the pressing plate 7 reaches the lower end, the wafer chuck 2 of the shell 4 and the bottom jacket 9 are uniformly in close contact with each other, and all the connection pads 3B of the contactor 3 of the shell 4 are collectively and electrically connected to the corresponding pogo pins 10. , And all the chips on the wafer W are brought into a conductive state in which a reliability test can be performed collectively in the wafer state.

On the other hand, in the process of joining the bottom jacket 9 to the wafer chuck 2 via the jacket joining device 16, the wafer chuck 2 joins the bottom jacket 9, and in this state, the elasticity of the spring 162 of the jacket joining device 16. When the bottom jacket 9 is further lowered against the pressure, the temperature sensor 141A of the temperature measuring device 141 gradually protrudes from the surface of the bottom jacket 9 and fits into the recess 2A on the back surface of the wafer chuck 2. Before the bottom jacket 9 reaches the lower end, the temperature sensor 141A
When the spring 141D is compressed by contacting the innermost portion of the recess A, the tip of the temperature sensor 141D elastically contacts the innermost portion of the concave portion 2A, and the temperature of the wafer chuck 2 at a position separated from the wafer W by 1 mm. Can be measured. Moreover, by detecting the position of the temperature sensor 141A by the position detection sensor 141E, it is possible to reliably detect whether or not the shell 4 exists on the bottom jacket 9.

Next, when the reliability test is started, the wafer temperature control device 13 operates to bring the wafer W into the inspection temperature (11).
(0 ° C.), and the temperature is controlled to the inspection temperature. At this time, in the heater temperature controller 14, the heater power supply 144 is turned on, and the wafer chuck 2 is heated from the back surface via the surface heater 91. Then, the temperature of the wafer chuck 2 is measured by the temperature sensor 141A of the temperature measuring device 141, and the detection signal is transmitted to the PID controller 142. When the PID controller 142 sends a control signal to the relay 143 in accordance with the deviation from the target value (inspection temperature), the PID controller 142 controls the heater power supply 144 via the relay 143, and outputs power corresponding to the deviation from the heater power supply 144 to the surface. The temperature is applied to the heater 91 to increase the temperature of the wafer chuck 2 to the inspection temperature in a short time via the surface heater 91. On the other hand, in the refrigerant temperature control device 15, the valves 158A and 158B are opened and the pump 156 is driven to supply the cooling water in the water tank 151 to the first cooling jacket 92 and the top jacket 12 of the bottom jacket 9 via the outward pipe 155A. . The cooling water returns to the water tank 151 via the return pipes 155B through the respective coolant flow paths 92A and 12A, starts circulation of the cooling water, and cools the bottom jacket 9 and the top jacket 12, respectively.

When the wafer chuck 2 reaches the inspection temperature,
The PID controller 142 operates based on the detection signal of the temperature sensor 141A to perform PID control of the heater power supply 144, and keeps the supplied power substantially constant to keep the wafer chuck 2 at the inspection temperature. During this time, the bottom jacket 9 and the top jacket 12 are cooled by the cooling water, and the temperature of the cooling water rises by absorbing the heat of the surface heater 91. However, since the heat resistance sheet 93 is interposed between the surface heater 91 and the first cooling jacket 92, most of the heat flow from the surface heater 91 to the first cooling jacket 92 is
3 to prevent an excessive rise in the temperature of the cooling water, prevent the boiling of the cooling water in the coolant passage 92A, and efficiently cool the bottom jacket 9. However, when the wafer chuck 2 reaches the inspection temperature, the temperature of the cooling water returning from the bottom jacket 9 and the top jacket 12 to the water tank 151 has reached about 70 to 80 ° C. Therefore, water tank 1
The cooling water in the cooling water 51 is constantly cooled to a temperature (for example, 40 ° C.) with good cooling efficiency by the cooler 152. The temperature of the cooling water is always detected by the temperature sensor 153, and a detection signal is transmitted to the PID controller 154, so that the cooling device 1
52 by PID control to constantly adjust the flow rate of the refrigerant,
The cooling water in 51 is always kept at a constant temperature. As a result, the temperature rise around the bottom jacket 9 is suppressed by the first cooling jacket 92, and the temperature rise of the contactor 3 and the temperature around the contactor 3 are suppressed by the top jacket 12, thereby increasing the temperature inside the temperature control chamber 1A. And thus heat dissipation to the periphery of the wafer storage chamber 1 is suppressed.

The pogo pin block 17 thermally expands due to the temperature rise in the temperature control chamber 1A. However, since the pogo pin block 17 is divided into four block elements 171, the dimensional change due to thermal expansion of each block element 171 due to thermal expansion is significantly smaller than when the pogo pin block 17 is not divided. Therefore, the pogo pins 10 implanted in the pogo pin block 17 are in stable and reliable contact with the connection pads 3B of the contactor 3. In addition, since there is an interval of 1 mm between each block element 171, the thermal expansion of each block element 171 can be absorbed by these gaps δ.

When the wafer W reaches the inspection temperature under the control of the wafer temperature controller 13, a test signal S1 is transmitted from the driver to the wafer W via the connector, the pogo pins 10, and the contactor 3 as shown in FIG. The inspection result signal S2 is transmitted from W to the tester along the reverse path, and the reliability test can be performed on all the chips in the wafer state.

As described above, according to this embodiment,
In cooperation with the contactor 3, the wafer chuck 2 holding the wafer W in contact with the contactor 3 at a time is placed on the bottom jacket 9, and the wafer W is brought to a predetermined inspection temperature (110 ° C.) by the bottom jacket 9. In the case of the temperature measuring device 141 used for control, the wafer chuck 2 is provided with three concave portions 2A reaching from the back surface to the vicinity of the front surface, and the bottom jacket 9 is provided with through holes 9B corresponding to the concave portions 2A, and A temperature sensor 141A that can be fitted into the recess 2A from the through hole 9B is provided on the base 5 below the bottom jacket 9, and a temperature sensor 141A spring 141 is provided.
The temperature sensor 141A measures the temperature of the wafer chuck 2 at a position closest to the wafer W during the reliability test, because the temperature sensor 141A supports the tip of the temperature sensor 141A during the reliability test. Can be
As a result, the temperature of the wafer W can be accurately measured, and the inspection accuracy of the reliability test can be improved.

Further, according to the present embodiment, since the above-described temperature measuring device 141 is provided in the wafer storage chamber 1, when the reliability test is performed in the wafer storage chamber 1, the temperature sensor 14 is used.
The temperature of the wafer chuck 2 can be measured at the position closest to the wafer W by 1A, and the temperature of the wafer W can be measured with high accuracy, and the inspection accuracy of the reliability test can be improved.

Further, according to the present embodiment, the position detecting sensor 141 for detecting whether or not the wafer chuck 2 (the shell 4 in this embodiment) exists on the bottom jacket 9.
Since E is provided, whether or not the shell 4 is mounted on the bottom jacket 9 can be known with certainty, and the temperature of the wafer w can be measured without error.

In the above-described embodiment, the temperature control body is installed on the base 5 in the wafer storage chamber 1 as the bottom jacket 9. However, the temperature control body is used as the top jacket and the upper surface in the wafer storage chamber 1 is used. It may be provided on the side. In the above embodiment, the wafer storage chamber 1
Has been described in the case where the wafer storage chamber 1 is used horizontally, but the wafer storage chamber 1 may be used upright. Therefore, the positional relationship between the temperature controller and the wafer holder in the wafer storage chamber 1 changes relatively, and the temperature sensor of the temperature measuring device moves from the top or the side to the wafer holder according to the relative positional relationship between the two. Therefore, any of these cases is included in the present invention.

[0047]

According to the first and third aspects of the present invention, the wafer temperature can be accurately measured at the time of inspection, and the reliability of inspection can be improved. Can be provided.

According to the second and third aspects of the present invention, it is possible to accurately measure the temperature of a wafer at the time of a reliability test, thereby improving the reliability of the inspection. A temperature measurement device for a wafer holder can be provided.

According to the fifth and sixth aspects of the present invention, the temperature of the wafer can be accurately measured at the time of the reliability test, and the reliability of the inspection can be improved. A wafer storage chamber can be provided.

According to the fourth and seventh aspects of the present invention, whether or not the wafer holder is mounted on the temperature controller can be reliably determined, and the semiconductor wafer can be detected without error. And a wafer storage chamber capable of measuring the temperature of the wafer holder.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a state in which a shell is stored in a wafer storage chamber, which is one embodiment of the wafer storage chamber of the present invention.

FIG. 2 is an exploded perspective view for explaining signal transmission and reception when a reliability test is performed using the wafer storage chamber shown in FIG.

FIG. 3 is a view showing the wafer chuck shown in FIG. 1;
Is a perspective view thereof, (b) is a cross-sectional view of a main part thereof, (c) is a cross-sectional view showing a valve mechanism of a gas supply / discharge pipe, and (d) is a perspective view of a seal member used for a main part shown in (b). FIG.

4A and 4B are diagrams showing a state in which the wafer and the contactor shown in FIG. 1 are brought into collective contact, wherein FIG. 4A is a plan view showing a relationship between a chip and an anisotropic conductive sheet of the contactor, and FIG. Sectional views, (c) and (d) are plan views showing the relationship between the electrode pad and the conductor of the anisotropic conductive sheet, respectively.

FIG. 5 is a perspective view showing the bottom jacket shown in FIG. 2;

FIG. 6 is a sectional view of the bottom jacket shown in FIG. 5;

FIG. 7 is a block diagram illustrating a temperature control device of the wafer storage chamber illustrated in FIG. 1;

FIG. 8 is a cross-sectional view schematically showing a bottom-jacket bonding apparatus and a wafer temperature measuring apparatus shown in FIG. 2;
(A) is a diagram showing a state before a shell is mounted, (b) is a diagram showing a state after a shell is mounted, and (c) is an enlarged view showing a relationship between a temperature sensor and a position detection sensor.

FIG. 9 is a view showing the pogo pin block shown in FIG. 1;
(A) is a perspective view showing a pogo pin block on which pogo pins are erected, and (b) is a schematic view showing a thermal effect when the pogo pin and the contactor of (a) come into contact with each other.

10A and 10B are views showing another pogo pin block for comparison with the pogo pin block shown in FIG. 9, wherein FIG. 10A is a perspective view showing a pogo pin block on which pogo pins are erected, and FIG. 10B is a view showing the pogo pin of FIG. It is a schematic diagram which shows the thermal effect when a contactor contacts.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 wafer storage chamber 2 wafer chuck (wafer holding body) 2A recess 3 contactor 3A electrode pad 3B connection pad (external terminal) 4 shell 5 base 9 bottom jacket (temperature control body) 9B through hole 10 pogo pin (relay terminal) 17 pogo pin Block 141 Temperature measuring device 141A Temperature sensor 141E Position detection sensor 141D Spring (elastic member) W Wafer T Chip

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-8-162508 (JP, A) JP-A-7-263526 (JP, A) JP-A-8-340030 (JP, A) JP-A-7-263 74218 (JP, A) JP-A-4-196245 (JP, A) JP-A-64-153833 (JP, A) JP-A-63-226936 (JP, A) JP-A-4-354127 (JP, A) JP-A-60-245776 (JP, A) JP-A-64-21379 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/66

Claims (7)

(57) [Claims] A temperature controller that contacts the wafer holder holding the semiconductor wafer and measures the temperature of the wafer holder when the temperature controller controls the semiconductor wafer to a predetermined inspection temperature. an apparatus, the wafer holder to provide a recess that reaches the vicinity of the surface from the back surface in at least one place one, provided on the opposite side of the temperature sensor can be fitted into the concave portion and the wafer holder of the temperature control body A temperature measuring device for a wafer holder, wherein the temperature sensor is supported by an elastic member, and a tip of the temperature sensor is elastically contacted with the recess at the time of inspection. And a temperature controller that cooperates with the contactor to hold the semiconductor wafer in contact with the contactor at a time, and that the semiconductor wafer is brought to a predetermined inspection temperature by the temperature controller. when controlling, the a wafer holder apparatus for measuring the temperature of, while providing at least one location recess to reach the vicinity of the surface from the back surface to the wafer holder, the temperature sensor can be fitted into the recess The temperature controller is provided on the opposite side of the wafer holder and the temperature sensor is supported by an elastic member,
A temperature measuring device for a wafer holder, wherein a tip of the temperature sensor is elastically contacted with the recess at the time of inspection. 3. The temperature measuring apparatus for a wafer holder according to claim 1, wherein a spring is provided as the elastic member. 4. The wafer according to claim 1, further comprising a position detection sensor for detecting whether or not the wafer holder exists in the temperature controller. Temperature measurement device for holder. 5. A temperature controller which cooperates with a contactor to control a wafer holder holding a semiconductor wafer in a state of being brought into collective contact with the contactor to a predetermined inspection temperature, and is provided upright around the temperature controller. A plurality of relay terminals for contacting the external terminals of the contactor; a wafer for inspecting all the semiconductor elements formed on the semiconductor wafer in a semiconductor wafer state; a storage chamber, one provided at least one location recess to reach the vicinity of the surface from the back surface to the wafer holder
On the other hand, a temperature sensor that can be fitted into the concave portion is provided on the opposite side of the temperature controller from the wafer holder, and the temperature sensor is supported by an elastic member. A wafer accommodating chamber characterized by being made to work. 6. The wafer storage chamber according to claim 5, wherein a spring is provided as the elastic member. 7. The wafer storage according to claim 5, wherein a position detection sensor for detecting whether or not the wafer holder is present is provided in the temperature controller.
Room .