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JPS6476726A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS6476726A
JPS6476726A JP62233399A JP23339987A JPS6476726A JP S6476726 A JPS6476726 A JP S6476726A JP 62233399 A JP62233399 A JP 62233399A JP 23339987 A JP23339987 A JP 23339987A JP S6476726 A JPS6476726 A JP S6476726A
Authority
JP
Japan
Prior art keywords
oxide film
drying
ultrahighly
pure water
contaminants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62233399A
Other languages
Japanese (ja)
Inventor
Hideaki Kurokawa
Isao Okochi
Katsuya Ebara
Sankichi Takahashi
Takao Hishinuma
Harumi Matsuzaki
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62233399A priority Critical patent/JPS6476726A/en
Priority to DE88104672T priority patent/DE3884435T2/en
Priority to EP88104672A priority patent/EP0284052B1/en
Priority to KR1019880003177A priority patent/KR960003543B1/en
Priority to US07/172,583 priority patent/US4879041A/en
Publication of JPS6476726A publication Critical patent/JPS6476726A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent contamination at the time of feeding, and to form a thin oxide film of high quality while controlling oxidizing velocity in ultrahighly pure water by forming an oxide film on the surface of a semiconductor wafer in the ultrahighly pure water by condensing steam passed through a hydrophobic porous film. CONSTITUTION:In order to first remove the contaminants and natural oxide film of the surface of a silicon wafer substrate 32, it is cleaned with chemicals. Then, after the used chemicals are removed and cleaned with superpure water, it is oxidized under water with new ultrahighly pure water 34. Here, after an oxide film of approx. 10-40Angstrom is formed, it is dried by spin drying, IPA vapor drying or steam drying, and oxidized in a furnace. Accordingly, when moving from the cleaning step through the drying step to the oxidizing step, since the surface of the silicon wafer is made hydrophilic, contaminants can be considerably prevented as compared with a conventional system being hydrophobic.
JP62233399A 1987-03-25 1987-09-17 Manufacture of semiconductor Pending JPS6476726A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62233399A JPS6476726A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor
DE88104672T DE3884435T2 (en) 1987-03-25 1988-03-23 Processes for producing high-purity water and process for using this water.
EP88104672A EP0284052B1 (en) 1987-03-25 1988-03-23 Process for producing ultra-pure water and process for using said ultra-pure water
KR1019880003177A KR960003543B1 (en) 1987-03-25 1988-03-24 Ultrapure-water producing method and the usage
US07/172,583 US4879041A (en) 1987-03-25 1988-03-24 Process for producing ultra-pure water and process for using said ultra-pure water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233399A JPS6476726A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS6476726A true JPS6476726A (en) 1989-03-22

Family

ID=16954469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233399A Pending JPS6476726A (en) 1987-03-25 1987-09-17 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS6476726A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992006489A1 (en) * 1990-10-09 1992-04-16 Chlorine Engineers Corp., Ltd. Method of removing organic coating
JPH05329470A (en) * 1992-05-28 1993-12-14 Ebara Corp Clean water producing device
US5378317A (en) * 1990-10-09 1995-01-03 Chlorine Engineers Corp., Ltd. Method for removing organic film
US6530381B1 (en) * 1999-11-04 2003-03-11 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the wet-chemical surface treatment of a semiconductor wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992006489A1 (en) * 1990-10-09 1992-04-16 Chlorine Engineers Corp., Ltd. Method of removing organic coating
US5378317A (en) * 1990-10-09 1995-01-03 Chlorine Engineers Corp., Ltd. Method for removing organic film
JPH05329470A (en) * 1992-05-28 1993-12-14 Ebara Corp Clean water producing device
US6530381B1 (en) * 1999-11-04 2003-03-11 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the wet-chemical surface treatment of a semiconductor wafer

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