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JPS5544765A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5544765A
JPS5544765A JP11823478A JP11823478A JPS5544765A JP S5544765 A JPS5544765 A JP S5544765A JP 11823478 A JP11823478 A JP 11823478A JP 11823478 A JP11823478 A JP 11823478A JP S5544765 A JPS5544765 A JP S5544765A
Authority
JP
Japan
Prior art keywords
etching
wafer
porous alumina
protective film
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11823478A
Other languages
Japanese (ja)
Inventor
Toru Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP11823478A priority Critical patent/JPS5544765A/en
Publication of JPS5544765A publication Critical patent/JPS5544765A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To obtain a given Al wafer pattern for low speed of etching from side face through the process consisting of changing Al wafer into porous alumina through selective chemical treatment using photo-resist as protective film, and etching the alumina.
CONSTITUTION: The Al wafer 3 having attached to the surface of a semiconductor substrate 2 having insulating film 6 is chemically treated using patterned photo- resist 1 for changing the portion at the range not covered with the protective film 1 thereof into porous alumina 4. At this time, the portion at the range convered with the protective film 1 of the Al wafer 3 does not change at all, and the remainder portion become almost to the protective film 1 in size. Next, etching treatment is made with etching liquid of which the etching speed for porous alumina 4 is sufficiently higher than that for Al 3 or non-porous alumina 5. Since the non- porous alumina 5 serves as good pro tective film, a low rate is developed of etching from the side face of the Al wafer 3 so that Al pattern almost equal to photo-resist pattern in size can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP11823478A 1978-09-25 1978-09-25 Manufacture of semiconductor Pending JPS5544765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11823478A JPS5544765A (en) 1978-09-25 1978-09-25 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11823478A JPS5544765A (en) 1978-09-25 1978-09-25 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5544765A true JPS5544765A (en) 1980-03-29

Family

ID=14731540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11823478A Pending JPS5544765A (en) 1978-09-25 1978-09-25 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5544765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867929A3 (en) * 1997-03-25 1999-04-14 P.C.B. Ltd. Electronic interconnect structure and method for manufacturing it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867929A3 (en) * 1997-03-25 1999-04-14 P.C.B. Ltd. Electronic interconnect structure and method for manufacturing it

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