KR950001950A - Oxide film formation method by hydrophilization of wafer - Google Patents
Oxide film formation method by hydrophilization of wafer Download PDFInfo
- Publication number
- KR950001950A KR950001950A KR1019930012206A KR930012206A KR950001950A KR 950001950 A KR950001950 A KR 950001950A KR 1019930012206 A KR1019930012206 A KR 1019930012206A KR 930012206 A KR930012206 A KR 930012206A KR 950001950 A KR950001950 A KR 950001950A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- oxide film
- forming
- hydrophilizing
- wafer surface
- Prior art date
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- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
본 발명은 웨이퍼의 친수성화에 의한 산화막 형성방법에 있어서, 실리콘 웨이퍼를 고온 순수로 린스(rinse)하면서 세척 용기에 오존을 주입하여 웨이퍼 표면에 매우 얇고 균일한 SiO2박막을 형성하여 웨이퍼 표면을 친수성으로 형성하는 단계와; 웨이퍼를 건조하는 단계를 포함하여 이루어지는 것을 특징으로 하는 웨이퍼의 친수성화에 의한 산화막 형성방법에 관한 것으로, 산화막 형성 공정전에 이루어지는 세척공정에서 실리콘 웨이퍼 표면에 오존을 사용한 SiO2박막을 형성함으로써 웨이퍼를 친수성으로 만들어 이후의 공정시 오염물질 발생을 억제할 수 있어 반도체 소자의 수율을 향상시키는 효과가 있다.In the method of forming an oxide film by hydrophilizing a wafer, an ozone is injected into a washing vessel while rinsing a silicon wafer with high temperature pure water to form a very thin and uniform SiO 2 thin film on the wafer surface to make the wafer surface hydrophilic. Forming to; A method of forming an oxide film by hydrophilizing a wafer, comprising drying the wafer, wherein the wafer is made hydrophilic by forming a SiO 2 thin film using ozone on a silicon wafer surface in a cleaning step before the oxide film forming step. It is possible to suppress the generation of contaminants during the subsequent processes to improve the yield of the semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 웨이퍼 세정 공정 흐름도이다.2 is a flow chart of a wafer cleaning process in accordance with the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930012206A KR950001950A (en) | 1993-06-30 | 1993-06-30 | Oxide film formation method by hydrophilization of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930012206A KR950001950A (en) | 1993-06-30 | 1993-06-30 | Oxide film formation method by hydrophilization of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950001950A true KR950001950A (en) | 1995-01-04 |
Family
ID=67142968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930012206A KR950001950A (en) | 1993-06-30 | 1993-06-30 | Oxide film formation method by hydrophilization of wafer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950001950A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030056224A (en) * | 2001-12-27 | 2003-07-04 | 동부전자 주식회사 | a method for cleaning the surface of a wafer |
| KR100387989B1 (en) * | 1995-08-24 | 2003-09-19 | 캐논 한바이 가부시키가이샤 | Manufacturing method of semiconductor device |
| KR100442744B1 (en) * | 2000-07-27 | 2004-08-02 | 실트로닉 아게 | Process for the Chemical Treatment of Semiconductor Wafers |
| KR100869846B1 (en) * | 2006-12-28 | 2008-11-21 | 주식회사 하이닉스반도체 | Cleaning method for semiconductor device and forming method of device isolation layer using the same |
-
1993
- 1993-06-30 KR KR1019930012206A patent/KR950001950A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100387989B1 (en) * | 1995-08-24 | 2003-09-19 | 캐논 한바이 가부시키가이샤 | Manufacturing method of semiconductor device |
| KR100442744B1 (en) * | 2000-07-27 | 2004-08-02 | 실트로닉 아게 | Process for the Chemical Treatment of Semiconductor Wafers |
| KR20030056224A (en) * | 2001-12-27 | 2003-07-04 | 동부전자 주식회사 | a method for cleaning the surface of a wafer |
| KR100869846B1 (en) * | 2006-12-28 | 2008-11-21 | 주식회사 하이닉스반도체 | Cleaning method for semiconductor device and forming method of device isolation layer using the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |