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JPS57134940A - Forming of semiconductor nitride layer - Google Patents

Forming of semiconductor nitride layer

Info

Publication number
JPS57134940A
JPS57134940A JP56020383A JP2038381A JPS57134940A JP S57134940 A JPS57134940 A JP S57134940A JP 56020383 A JP56020383 A JP 56020383A JP 2038381 A JP2038381 A JP 2038381A JP S57134940 A JPS57134940 A JP S57134940A
Authority
JP
Japan
Prior art keywords
nitride layer
silicon wafer
atmosphere
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56020383A
Other languages
Japanese (ja)
Other versions
JPS6349898B2 (en
Inventor
Takanori Hayafuji
Kazuo Kajiwara
Sachiko Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP56020383A priority Critical patent/JPS57134940A/en
Publication of JPS57134940A publication Critical patent/JPS57134940A/en
Publication of JPS6349898B2 publication Critical patent/JPS6349898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To form a relatively thick nitride layer on the surface a semiconductor substrate in a short time, by heat treating a substrate having a semiconductor layer in the non-oxide gas atmosphere containing nitrogen of somewhat high pressure (more than one atmosphere). CONSTITUTION:A thin SiO2 film 2 is formed on the surface of a silicon wafer 1. Then the wafer is exposed to a high temperature and a high pressure (more than one atmosphere) atmosphere containing nitrogen and heat treated to form on the surface of the silicon wafer 1 or between silicon wafer 1 and an SiO2 layer 2 a thick oxi-nitride layer 3 containing a large number of nitrogen atoms. The thick nitride layer is formed easily in a short time by directly nitriding the silicon wafer.
JP56020383A 1981-02-14 1981-02-14 Forming of semiconductor nitride layer Granted JPS57134940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56020383A JPS57134940A (en) 1981-02-14 1981-02-14 Forming of semiconductor nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56020383A JPS57134940A (en) 1981-02-14 1981-02-14 Forming of semiconductor nitride layer

Publications (2)

Publication Number Publication Date
JPS57134940A true JPS57134940A (en) 1982-08-20
JPS6349898B2 JPS6349898B2 (en) 1988-10-06

Family

ID=12025507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56020383A Granted JPS57134940A (en) 1981-02-14 1981-02-14 Forming of semiconductor nitride layer

Country Status (1)

Country Link
JP (1) JPS57134940A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218041A (en) * 1985-07-17 1987-01-27 Matsushita Electronics Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518054A (en) * 1978-07-25 1980-02-07 Nec Corp Fabricating method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518054A (en) * 1978-07-25 1980-02-07 Nec Corp Fabricating method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218041A (en) * 1985-07-17 1987-01-27 Matsushita Electronics Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6349898B2 (en) 1988-10-06

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