Nothing Special   »   [go: up one dir, main page]

JPS5763842A - Preparation of semiconductor integrated circuit - Google Patents

Preparation of semiconductor integrated circuit

Info

Publication number
JPS5763842A
JPS5763842A JP14032280A JP14032280A JPS5763842A JP S5763842 A JPS5763842 A JP S5763842A JP 14032280 A JP14032280 A JP 14032280A JP 14032280 A JP14032280 A JP 14032280A JP S5763842 A JPS5763842 A JP S5763842A
Authority
JP
Japan
Prior art keywords
film
groove
etching
si3n4
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14032280A
Other languages
Japanese (ja)
Other versions
JPS6029219B2 (en
Inventor
Tadao Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14032280A priority Critical patent/JPS6029219B2/en
Publication of JPS5763842A publication Critical patent/JPS5763842A/en
Publication of JPS6029219B2 publication Critical patent/JPS6029219B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form an insulating and separating region having a structure whose surface is almost free from unevenness, by utilizing the oxidation of a thin semiconductor film. CONSTITUTION:On a p type Si substrate 20 are formed an n type embedded region 21 and an n type epitaxial layer 22, whereon an SiO2 film 23 and an Si3N4 film 24 are formed. Next, a groove is formed by plasma spatter etching of a prescribed separating region, and a thin oxide film 27 is formed on the surface of the groove. Then, after an Si3N4 film 28 is formed on the whole surface, etching is applied thereto and thereby the Si3N4 film 28 is left only on the side surface of the groove. Next, in a similar way, a thin polycrystalline or amorphous Si film 29 is formed on the surface and it is left, by etching, only on the side surface of the groove. Then, oxidation is conducted in pressurized steam, whereby an SiO2 film 30 for insulation is formed. By the oxidiation of the Si film 29, the surface is made smooth.
JP14032280A 1980-10-06 1980-10-06 Manufacturing method of semiconductor integrated circuit Expired JPS6029219B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14032280A JPS6029219B2 (en) 1980-10-06 1980-10-06 Manufacturing method of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14032280A JPS6029219B2 (en) 1980-10-06 1980-10-06 Manufacturing method of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5763842A true JPS5763842A (en) 1982-04-17
JPS6029219B2 JPS6029219B2 (en) 1985-07-09

Family

ID=15266112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14032280A Expired JPS6029219B2 (en) 1980-10-06 1980-10-06 Manufacturing method of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6029219B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574423A (en) * 1983-02-09 1986-03-11 Fuji Seiki Kabushiki Kaisha Rotary damper having a clutch spring and viscous fluid
JPS6435284U (en) * 1987-08-27 1989-03-03
US4981813A (en) * 1987-02-24 1991-01-01 Sgs-Thomson Microelectronics, Inc. Pad oxide protect sealed interface isolation process
US5629230A (en) * 1995-08-01 1997-05-13 Micron Technology, Inc. Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion
US6306726B1 (en) 1999-08-30 2001-10-23 Micron Technology, Inc. Method of forming field oxide

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574423A (en) * 1983-02-09 1986-03-11 Fuji Seiki Kabushiki Kaisha Rotary damper having a clutch spring and viscous fluid
US4981813A (en) * 1987-02-24 1991-01-01 Sgs-Thomson Microelectronics, Inc. Pad oxide protect sealed interface isolation process
JPS6435284U (en) * 1987-08-27 1989-03-03
US5629230A (en) * 1995-08-01 1997-05-13 Micron Technology, Inc. Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion
US6306726B1 (en) 1999-08-30 2001-10-23 Micron Technology, Inc. Method of forming field oxide
US6326672B1 (en) 1999-08-30 2001-12-04 Micron Technology, Inc. LOCOS fabrication processes and semiconductive material structures

Also Published As

Publication number Publication date
JPS6029219B2 (en) 1985-07-09

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
ES466901A1 (en) Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
JPS5763842A (en) Preparation of semiconductor integrated circuit
JPS6459866A (en) Manufacture of mos transistor
JPS5331964A (en) Production of semiconductor substrates
JPS5748249A (en) Semiconductor device
JPS5735340A (en) Manufacture of semiconductor device
JPS55154750A (en) Manufacture of semiconductor device
EP0067738A3 (en) Method of reducing encroachment in a semiconductor device
JPS5718362A (en) Semiconductor device and manufacture thereof
JPS56138938A (en) Manufacture of semiconductor device
JPS5325350A (en) Dicing method of semiconductor substrates
JPS566448A (en) Mos type integrated circuit device
JPS57128944A (en) Maufacture of semiconductor device
JPS649639A (en) Manufacture of insulating film for element isolation of semiconductor device
JPS57106048A (en) Manufacture of semiconductor device
JPS56144556A (en) Manufacture of semiconductor device
JPS575329A (en) Manufacture of semiconductor device
JPS56158446A (en) Manufacture of semiconductor integrated circuit
JPS5740957A (en) Manufacture of semiconductor device
JPS57102048A (en) Manufacture of semiconductor device
JPS5440077A (en) Manufacture of semiconductor integrated circuit device substrate
JPS5717147A (en) Wiring formation
JPS5762542A (en) Manufacture of semiconductor device
JPS57190355A (en) Semiconductor device