Nothing Special   »   [go: up one dir, main page]

JPS5762537A - Forming method for film - Google Patents

Forming method for film

Info

Publication number
JPS5762537A
JPS5762537A JP55138452A JP13845280A JPS5762537A JP S5762537 A JPS5762537 A JP S5762537A JP 55138452 A JP55138452 A JP 55138452A JP 13845280 A JP13845280 A JP 13845280A JP S5762537 A JPS5762537 A JP S5762537A
Authority
JP
Japan
Prior art keywords
film
substrate
nitride
gas
pinhole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55138452A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55138452A priority Critical patent/JPS5762537A/en
Publication of JPS5762537A publication Critical patent/JPS5762537A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To form a dense nitrided silicon film having an extremely small thickness and no pinhole by altering the surface of a substrate cleaned and etched in a reduced atmosphere without contact with the atmosphere in the next step, thereby forming a nitrided film of the substrate. CONSTITUTION:A substrate having a stain film of 5-30Angstrom is inserted into a reaction furnace, a mixture gas with hydrogen or inert gas is introduced from a hydrogen inlet 5, is heated and reduced, and the surface of the substrate is cleaned. Then, the conditions are altered, ammonia gas is introduced from a nitride gas inlet 3 to nitride the mixture gas, and a nitride film of 5-15Angstrom is formed. In this manner, an extremely thin nitrided silicon film having small boundary level without pinhole is formed to be mostly adapted for an MIS-type solar battery.
JP55138452A 1980-10-02 1980-10-02 Forming method for film Pending JPS5762537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55138452A JPS5762537A (en) 1980-10-02 1980-10-02 Forming method for film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138452A JPS5762537A (en) 1980-10-02 1980-10-02 Forming method for film

Publications (1)

Publication Number Publication Date
JPS5762537A true JPS5762537A (en) 1982-04-15

Family

ID=15222334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138452A Pending JPS5762537A (en) 1980-10-02 1980-10-02 Forming method for film

Country Status (1)

Country Link
JP (1) JPS5762537A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950575A (en) * 1982-09-16 1984-03-23 Agency Of Ind Science & Technol Manufacture of solar battery
JPS61176125A (en) * 1985-01-31 1986-08-07 Toshiba Corp Defect reducing method for thin silicon thermally oxided film
KR100419025B1 (en) * 1996-11-06 2004-04-29 주식회사 하이닉스반도체 Nitride film formation method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423379A (en) * 1977-07-22 1979-02-21 Fujitsu Ltd Formation of insulating film on semiconductor surface
JPS54107876A (en) * 1978-02-14 1979-08-24 Toshiba Corp Method and apparatus for reduction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423379A (en) * 1977-07-22 1979-02-21 Fujitsu Ltd Formation of insulating film on semiconductor surface
JPS54107876A (en) * 1978-02-14 1979-08-24 Toshiba Corp Method and apparatus for reduction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950575A (en) * 1982-09-16 1984-03-23 Agency Of Ind Science & Technol Manufacture of solar battery
JPS639758B2 (en) * 1982-09-16 1988-03-01 Kogyo Gijutsuin
JPS61176125A (en) * 1985-01-31 1986-08-07 Toshiba Corp Defect reducing method for thin silicon thermally oxided film
KR100419025B1 (en) * 1996-11-06 2004-04-29 주식회사 하이닉스반도체 Nitride film formation method of semiconductor device

Similar Documents

Publication Publication Date Title
KR890702259A (en) Method for manufacturing solar cell with silicon nitride film
JPS5772318A (en) Vapor growth method
JPS56161646A (en) Manufacture of semiconductor device
JPS5766625A (en) Manufacture of film
JPS5762537A (en) Forming method for film
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS5659694A (en) Manufacture of thin film
JPS5423379A (en) Formation of insulating film on semiconductor surface
JPS6437028A (en) Manufacture of semiconductor element
JPS5471577A (en) Production of semiconductor device
JPS56162841A (en) Forming method for insulating film of compound semiconductor
JPS57202744A (en) Manufacture of semiconductor device
JPS5567143A (en) Method for manufacturing semiconductor device
JPS57134940A (en) Forming of semiconductor nitride layer
JPS5745227A (en) Manufacture of semiconductor device
JPS56105631A (en) Electrode formation of semiconductor device
JPS52139373A (en) Treating method for compound semiconductor
JPS64744A (en) Element isolation method in semiconductor device
JPS6417425A (en) Manufacture of semiconductor device
JPS5671943A (en) Oxide film coating of compound semiconductor device
JPS5710242A (en) Manufacture of semiconductor device
JPS56162855A (en) Forming method for insulator region
JPS54102965A (en) Impurity diffusion method
JPS55156327A (en) Manufacture for semiconductor
JPS564285A (en) Manufacture of planar type semiconductor device