JPS5596669A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the sameInfo
- Publication number
- JPS5596669A JPS5596669A JP452879A JP452879A JPS5596669A JP S5596669 A JPS5596669 A JP S5596669A JP 452879 A JP452879 A JP 452879A JP 452879 A JP452879 A JP 452879A JP S5596669 A JPS5596669 A JP S5596669A
- Authority
- JP
- Japan
- Prior art keywords
- ruggedness
- resistors
- sio2 film
- perforated
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain resistors having predetermined resistance in high packing density on a single substrate by forming stripe ruggedness on the semiconductor substrate in advance and providing diffused resistors while intersecting them with the ruggedness. CONSTITUTION:An SiO2 film 22 is coated on a p-type silicon substrate 21, opening 23 for forming ruggedness are perforated by a photoetching process, and etched to thereby form stripe ruggedness 23'. Then, thin SiO2 film is formed again on the entire surface, openings 24 are perforated by intersecting with the ruggedness 23', n-type impurity is diffused to thereby form resistors 25. Simultaneously, the source and drain regions 26, 27 are formed for MOS transistor. An SiO2 film 28' is coated on a gate SiO2 film 28 or the resistor 25 between the regions 26 and 27, openings 29 are perforated, metal wires 30-33 are attached, and a gate electrode 32 is coated on the film 28. Thus, the MOS transistor 40 and the resistors 25 are coexisted on the same substrate 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP452879A JPS5596669A (en) | 1979-01-18 | 1979-01-18 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP452879A JPS5596669A (en) | 1979-01-18 | 1979-01-18 | Semiconductor device and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5596669A true JPS5596669A (en) | 1980-07-23 |
Family
ID=11586538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP452879A Pending JPS5596669A (en) | 1979-01-18 | 1979-01-18 | Semiconductor device and method of fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596669A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005008772B4 (en) * | 2005-02-25 | 2011-11-10 | Infineon Technologies Ag | Chip with a device in an oblique area with a reduced stress dependence |
| JP2015008213A (en) * | 2013-06-25 | 2015-01-15 | 富士通セミコンダクター株式会社 | Semiconductor device and method of manufacturing the same |
-
1979
- 1979-01-18 JP JP452879A patent/JPS5596669A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005008772B4 (en) * | 2005-02-25 | 2011-11-10 | Infineon Technologies Ag | Chip with a device in an oblique area with a reduced stress dependence |
| JP2015008213A (en) * | 2013-06-25 | 2015-01-15 | 富士通セミコンダクター株式会社 | Semiconductor device and method of manufacturing the same |
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