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JPS5627971A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5627971A
JPS5627971A JP10424379A JP10424379A JPS5627971A JP S5627971 A JPS5627971 A JP S5627971A JP 10424379 A JP10424379 A JP 10424379A JP 10424379 A JP10424379 A JP 10424379A JP S5627971 A JPS5627971 A JP S5627971A
Authority
JP
Japan
Prior art keywords
film
entire surface
high density
source
containing high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10424379A
Other languages
Japanese (ja)
Inventor
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10424379A priority Critical patent/JPS5627971A/en
Publication of JPS5627971A publication Critical patent/JPS5627971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To contrive the reduction of a memoty cell by self-aligning the side and the upper surfaces of a polysilicon gate electrode through a silicon nitride film and coating the film thereon. CONSTITUTION:A P type substrate 106 consists of a field insulating film 101, a polysilicon gate electrode 102 containing high density phosphorus, a gate insulating film 103, and source and drain regions 104, 105 containing high density arsenic. With the electrode 102 as a mask the silicon oxide film on the regions 104, 105 is removed, and a silicon nitride film 107 is thereafter coated on the entire surface thereof. Subsequently, a silicon oxide film 108 is formed thereon, a PGS film 109 is coated on the entire surface, openings are perforated on the source and the drain regions, and aluminum wires 110, 111 are formed therethrough.
JP10424379A 1979-08-15 1979-08-15 Semiconductor device and manufacture thereof Pending JPS5627971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10424379A JPS5627971A (en) 1979-08-15 1979-08-15 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10424379A JPS5627971A (en) 1979-08-15 1979-08-15 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5627971A true JPS5627971A (en) 1981-03-18

Family

ID=14375503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10424379A Pending JPS5627971A (en) 1979-08-15 1979-08-15 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5627971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02130834A (en) * 1988-11-10 1990-05-18 Nec Yamagata Ltd Manufacture of semiconductor integrated circuit device
US7649261B2 (en) 1996-07-18 2010-01-19 Fujitsu Microelectronics Limited Highly integrated and reliable DRAM and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02130834A (en) * 1988-11-10 1990-05-18 Nec Yamagata Ltd Manufacture of semiconductor integrated circuit device
US7649261B2 (en) 1996-07-18 2010-01-19 Fujitsu Microelectronics Limited Highly integrated and reliable DRAM and its manufacture
US8143723B2 (en) 1996-07-18 2012-03-27 Fujitsu Semiconductor Limited Highly integrated and reliable DRAM and its manufacture

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