JPS5710969A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5710969A JPS5710969A JP8631080A JP8631080A JPS5710969A JP S5710969 A JPS5710969 A JP S5710969A JP 8631080 A JP8631080 A JP 8631080A JP 8631080 A JP8631080 A JP 8631080A JP S5710969 A JPS5710969 A JP S5710969A
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide film
- silicon film
- concentration
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enable a transistor of small base resistance to be readily manufactured, by constituting such that a part of the emitter electrode is formed from a silicon film, and the high-concentration region of the base region is provided in the region not covered with the silicon film in a self alignment manner. CONSTITUTION:On an N type silicon substrate 21, an oxide film 22, a P type base region 23 formed by diffusing boron, and an oxide film 24 are formed. Then, the oxide film 24 is provided with an opening, and a polycrystalline silicon film 26 is provided at said opening and the periphery thereof. Then, with the silicon film 26 and the oxide film 22 as a mask, boron of high concentration is added into the base region 23 to form high-concentration base regions 27 and 27'. Then, through the silicon film 26, phosphorus or arsenic is diffused into the low-concentration base region 23 to form an N type emitter region 28. Then, after openings have been selectively provided in the oxide film 24, electrodes 210, 201' and 201'' are formed. Said method can be applied also to a PNP type transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8631080A JPS5710969A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8631080A JPS5710969A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710969A true JPS5710969A (en) | 1982-01-20 |
Family
ID=13883254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8631080A Pending JPS5710969A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710969A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076165A (en) * | 1983-09-30 | 1985-04-30 | Nec Kansai Ltd | Transistor |
| JPS62224968A (en) * | 1986-03-27 | 1987-10-02 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPS6351673A (en) * | 1985-03-23 | 1988-03-04 | エステイ−シ− ピ−エルシ− | Manufacture of bipolar transistor |
| US6651526B1 (en) | 1999-09-06 | 2003-11-25 | Yamaha Corporation | Steering wheel and manufacturing method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391672A (en) * | 1977-01-24 | 1978-08-11 | Nec Corp | Manufacture for semiconductor device |
| JPS553686A (en) * | 1978-06-23 | 1980-01-11 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
-
1980
- 1980-06-25 JP JP8631080A patent/JPS5710969A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391672A (en) * | 1977-01-24 | 1978-08-11 | Nec Corp | Manufacture for semiconductor device |
| JPS553686A (en) * | 1978-06-23 | 1980-01-11 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076165A (en) * | 1983-09-30 | 1985-04-30 | Nec Kansai Ltd | Transistor |
| JPS6351673A (en) * | 1985-03-23 | 1988-03-04 | エステイ−シ− ピ−エルシ− | Manufacture of bipolar transistor |
| JPS62224968A (en) * | 1986-03-27 | 1987-10-02 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US6651526B1 (en) | 1999-09-06 | 2003-11-25 | Yamaha Corporation | Steering wheel and manufacturing method therefor |
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