JPS5515263A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS5515263A JPS5515263A JP8876678A JP8876678A JPS5515263A JP S5515263 A JPS5515263 A JP S5515263A JP 8876678 A JP8876678 A JP 8876678A JP 8876678 A JP8876678 A JP 8876678A JP S5515263 A JPS5515263 A JP S5515263A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stepped portion
- etched
- thin
- schottky junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To stabilize a schottky junction with a wiring pattern having a high density by controlling the exposure amount to a photo resist film provided on the stepped portion mounted on a semiconductor substrate.
CONSTITUTION: An insulation film 9 and 9' are mounted on a semiconductor substrate 8 and the film 9' is etched off to be changed into a thin gate insulation film 10 and 10'. Successively the film 10' on a source, drain region forming therein the substrate 8 and schottky junction is etched off to mount thereon a metallic film 11 of Al and others. Thereafter, the full surface is covered with a photoresist film 12, in this case a film 14 to 14' on a stepped portion 13 to 13' is made thin than that a film 16 on a planer portion 15. Successively, when the resist film 12 is exposured, the thin film 11 is caused to associate with the stepped portion 13 to be separated the exposure amount is given changeably to the remaining stepped portion 13' and 13" and the planer portion 15 to make the film a pattern configuration 17. Thereafter, the film is etched as used for a mask, a thin film 14 is made a deter mined wiring pattern 18 to generate a schottky junction 19.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8876678A JPS5515263A (en) | 1978-07-19 | 1978-07-19 | Mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8876678A JPS5515263A (en) | 1978-07-19 | 1978-07-19 | Mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5515263A true JPS5515263A (en) | 1980-02-02 |
Family
ID=13951976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8876678A Pending JPS5515263A (en) | 1978-07-19 | 1978-07-19 | Mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5515263A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932172A (en) * | 1982-07-23 | 1984-02-21 | ウェスターン エレクトリック カムパニー，インコーポレーテッド | Integrated circuit made of schottky barrier mos device and method of producing same |
| JPS6034066A (en) * | 1983-08-06 | 1985-02-21 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60103671A (en) * | 1983-11-11 | 1985-06-07 | Toshiba Corp | Semiconductor device |
| US7564061B2 (en) | 2004-09-28 | 2009-07-21 | Fujitsu Limited | Field effect transistor and production method thereof |
-
1978
- 1978-07-19 JP JP8876678A patent/JPS5515263A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932172A (en) * | 1982-07-23 | 1984-02-21 | ウェスターン エレクトリック カムパニー，インコーポレーテッド | Integrated circuit made of schottky barrier mos device and method of producing same |
| JPS6034066A (en) * | 1983-08-06 | 1985-02-21 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60103671A (en) * | 1983-11-11 | 1985-06-07 | Toshiba Corp | Semiconductor device |
| US7564061B2 (en) | 2004-09-28 | 2009-07-21 | Fujitsu Limited | Field effect transistor and production method thereof |
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