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JPS53108773A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53108773A
JPS53108773A JP2420177A JP2420177A JPS53108773A JP S53108773 A JPS53108773 A JP S53108773A JP 2420177 A JP2420177 A JP 2420177A JP 2420177 A JP2420177 A JP 2420177A JP S53108773 A JPS53108773 A JP S53108773A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
xrays
density
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2420177A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2420177A priority Critical patent/JPS53108773A/en
Publication of JPS53108773A publication Critical patent/JPS53108773A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To obtain insulation isolation regions of flat surface structure and improve the density of an IC by providing a metal film having mask effect for Xrays and a resist film having an inversion relation with this on a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP2420177A 1977-03-04 1977-03-04 Production of semiconductor device Pending JPS53108773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2420177A JPS53108773A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2420177A JPS53108773A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53108773A true JPS53108773A (en) 1978-09-21

Family

ID=12131698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2420177A Pending JPS53108773A (en) 1977-03-04 1977-03-04 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108773A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204144A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Insulating and isolating method for semiconductor integrated circuit
JPS5856353A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Forming method for isolation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204144A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Insulating and isolating method for semiconductor integrated circuit
JPS5856353A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Forming method for isolation
JPH0358179B2 (en) * 1981-09-29 1991-09-04 Fujitsu Ltd

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