JPH0247820U - - Google Patents
Info
- Publication number
- JPH0247820U JPH0247820U JP12631188U JP12631188U JPH0247820U JP H0247820 U JPH0247820 U JP H0247820U JP 12631188 U JP12631188 U JP 12631188U JP 12631188 U JP12631188 U JP 12631188U JP H0247820 U JPH0247820 U JP H0247820U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- output
- output electrode
- potential point
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Amplifiers (AREA)
Description
第1図はこの考案に係るマイクロ波増幅回路の
一実施例を示す回路図、第2図、第3図及び第4
図はそれぞれこの考案の他の実施例を示す回路図
、第5図は縦続接続をした一般的マイクロ波用増
幅回路を示す回路図、第6図は省電力形の従来の
増幅回路を示す回路図である。
11……第1の素子、12……第2の素子、1
3……電流補正用トランジスタ、14,15……
バイアス抵抗、B……電源端子、E……接地点、
P1,P2……出力電極、P3……入力電極。
Fig. 1 is a circuit diagram showing an embodiment of the microwave amplification circuit according to this invention, Fig. 2, Fig. 3, and Fig. 4.
The figures are circuit diagrams showing other embodiments of this invention, Fig. 5 is a circuit diagram showing a general microwave amplifier circuit connected in cascade, and Fig. 6 is a circuit diagram showing a conventional power-saving amplifier circuit. It is a diagram. 11...first element, 12...second element, 1
3... Current correction transistor, 14, 15...
Bias resistor, B...power terminal, E...ground point,
P1, P2...Output electrode, P3...Input electrode.
Claims (1)
ジスタ素子、或いは該素子に所定バイアス抵抗を
接続した集積回路素子を2個用い、第1の素子に
おける一方出力電極が電源端子に、第2の素子に
おける他方出力電極が接地点に接続され、残りの
出力電極同士が共通に接続されて中心電位点を構
成すると共に、前記第1の素子の出力電極と第2
の素子の入力電極、或いは第2の素子の出力電極
と第1の素子の入力電極とを結合して成る増幅器
を、少なくとも一段有する中間周波増幅用増幅回
路と、 前記中心電位点にエミツタが接続され、コレク
タが前記電源端子又は接地点に接続された電流補
正用トランジスタと、 このトランジスタのベースに前記中心電位点に
設定する電圧よりエミツタベース間電圧分だけ異
なる電圧を与えるバイアス回路とを具備したこと
を特徴とするマイクロ波増幅回路。[Claims for Utility Model Registration] A transistor device having an input electrode and two types of output electrodes, or two integrated circuit devices each having a predetermined bias resistor connected to the device, and one output electrode of the first device is a power supply terminal. The other output electrode of the second element is connected to the ground point, and the remaining output electrodes are connected in common to form a central potential point, and the output electrode of the first element and the second
an amplifier circuit for intermediate frequency amplification having at least one stage of an amplifier formed by coupling the input electrode of the element, or the output electrode of the second element and the input electrode of the first element, and an emitter connected to the center potential point. a current correction transistor whose collector is connected to the power supply terminal or the ground point; and a bias circuit that applies a voltage to the base of the transistor that is different from the voltage set at the center potential point by an emitter-base voltage. A microwave amplification circuit featuring:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12631188U JPH0247820U (en) | 1988-09-29 | 1988-09-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12631188U JPH0247820U (en) | 1988-09-29 | 1988-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0247820U true JPH0247820U (en) | 1990-04-03 |
Family
ID=31377724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12631188U Pending JPH0247820U (en) | 1988-09-29 | 1988-09-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0247820U (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007221331A (en) * | 2006-02-15 | 2007-08-30 | Dx Antenna Co Ltd | High-frequency amplifier |
JP2009272879A (en) * | 2008-05-07 | 2009-11-19 | Fujitsu Ltd | Amplifier circuit |
WO2011027387A1 (en) * | 2009-09-02 | 2011-03-10 | 株式会社 東芝 | Amplifier |
JP2015521827A (en) * | 2012-07-27 | 2015-07-30 | スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park | Power amplifier having a stack structure |
JP2016051906A (en) * | 2014-08-28 | 2016-04-11 | ラピスセミコンダクタ株式会社 | High frequency amplifier circuit |
WO2019172168A1 (en) * | 2018-03-08 | 2019-09-12 | 日本電信電話株式会社 | Amplifier circuit |
-
1988
- 1988-09-29 JP JP12631188U patent/JPH0247820U/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007221331A (en) * | 2006-02-15 | 2007-08-30 | Dx Antenna Co Ltd | High-frequency amplifier |
JP2009272879A (en) * | 2008-05-07 | 2009-11-19 | Fujitsu Ltd | Amplifier circuit |
WO2011027387A1 (en) * | 2009-09-02 | 2011-03-10 | 株式会社 東芝 | Amplifier |
JP2015521827A (en) * | 2012-07-27 | 2015-07-30 | スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park | Power amplifier having a stack structure |
JP2016051906A (en) * | 2014-08-28 | 2016-04-11 | ラピスセミコンダクタ株式会社 | High frequency amplifier circuit |
WO2019172168A1 (en) * | 2018-03-08 | 2019-09-12 | 日本電信電話株式会社 | Amplifier circuit |
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