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JPH0247820U - - Google Patents

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Publication number
JPH0247820U
JPH0247820U JP12631188U JP12631188U JPH0247820U JP H0247820 U JPH0247820 U JP H0247820U JP 12631188 U JP12631188 U JP 12631188U JP 12631188 U JP12631188 U JP 12631188U JP H0247820 U JPH0247820 U JP H0247820U
Authority
JP
Japan
Prior art keywords
electrode
output
output electrode
potential point
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12631188U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12631188U priority Critical patent/JPH0247820U/ja
Publication of JPH0247820U publication Critical patent/JPH0247820U/ja
Pending legal-status Critical Current

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  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案に係るマイクロ波増幅回路の
一実施例を示す回路図、第2図、第3図及び第4
図はそれぞれこの考案の他の実施例を示す回路図
、第5図は縦続接続をした一般的マイクロ波用増
幅回路を示す回路図、第6図は省電力形の従来の
増幅回路を示す回路図である。 11……第1の素子、12……第2の素子、1
3……電流補正用トランジスタ、14,15……
バイアス抵抗、B……電源端子、E……接地点、
P1,P2……出力電極、P3……入力電極。
Fig. 1 is a circuit diagram showing an embodiment of the microwave amplification circuit according to this invention, Fig. 2, Fig. 3, and Fig. 4.
The figures are circuit diagrams showing other embodiments of this invention, Fig. 5 is a circuit diagram showing a general microwave amplifier circuit connected in cascade, and Fig. 6 is a circuit diagram showing a conventional power-saving amplifier circuit. It is a diagram. 11...first element, 12...second element, 1
3... Current correction transistor, 14, 15...
Bias resistor, B...power terminal, E...ground point,
P1, P2...Output electrode, P3...Input electrode.

Claims (1)

【実用新案登録請求の範囲】 入力電極及び2種類の出力電極を有するトラン
ジスタ素子、或いは該素子に所定バイアス抵抗を
接続した集積回路素子を2個用い、第1の素子に
おける一方出力電極が電源端子に、第2の素子に
おける他方出力電極が接地点に接続され、残りの
出力電極同士が共通に接続されて中心電位点を構
成すると共に、前記第1の素子の出力電極と第2
の素子の入力電極、或いは第2の素子の出力電極
と第1の素子の入力電極とを結合して成る増幅器
を、少なくとも一段有する中間周波増幅用増幅回
路と、 前記中心電位点にエミツタが接続され、コレク
タが前記電源端子又は接地点に接続された電流補
正用トランジスタと、 このトランジスタのベースに前記中心電位点に
設定する電圧よりエミツタベース間電圧分だけ異
なる電圧を与えるバイアス回路とを具備したこと
を特徴とするマイクロ波増幅回路。
[Claims for Utility Model Registration] A transistor device having an input electrode and two types of output electrodes, or two integrated circuit devices each having a predetermined bias resistor connected to the device, and one output electrode of the first device is a power supply terminal. The other output electrode of the second element is connected to the ground point, and the remaining output electrodes are connected in common to form a central potential point, and the output electrode of the first element and the second
an amplifier circuit for intermediate frequency amplification having at least one stage of an amplifier formed by coupling the input electrode of the element, or the output electrode of the second element and the input electrode of the first element, and an emitter connected to the center potential point. a current correction transistor whose collector is connected to the power supply terminal or the ground point; and a bias circuit that applies a voltage to the base of the transistor that is different from the voltage set at the center potential point by an emitter-base voltage. A microwave amplification circuit featuring:
JP12631188U 1988-09-29 1988-09-29 Pending JPH0247820U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12631188U JPH0247820U (en) 1988-09-29 1988-09-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12631188U JPH0247820U (en) 1988-09-29 1988-09-29

Publications (1)

Publication Number Publication Date
JPH0247820U true JPH0247820U (en) 1990-04-03

Family

ID=31377724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12631188U Pending JPH0247820U (en) 1988-09-29 1988-09-29

Country Status (1)

Country Link
JP (1) JPH0247820U (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007221331A (en) * 2006-02-15 2007-08-30 Dx Antenna Co Ltd High-frequency amplifier
JP2009272879A (en) * 2008-05-07 2009-11-19 Fujitsu Ltd Amplifier circuit
WO2011027387A1 (en) * 2009-09-02 2011-03-10 株式会社 東芝 Amplifier
JP2015521827A (en) * 2012-07-27 2015-07-30 スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park Power amplifier having a stack structure
JP2016051906A (en) * 2014-08-28 2016-04-11 ラピスセミコンダクタ株式会社 High frequency amplifier circuit
WO2019172168A1 (en) * 2018-03-08 2019-09-12 日本電信電話株式会社 Amplifier circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007221331A (en) * 2006-02-15 2007-08-30 Dx Antenna Co Ltd High-frequency amplifier
JP2009272879A (en) * 2008-05-07 2009-11-19 Fujitsu Ltd Amplifier circuit
WO2011027387A1 (en) * 2009-09-02 2011-03-10 株式会社 東芝 Amplifier
JP2015521827A (en) * 2012-07-27 2015-07-30 スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park Power amplifier having a stack structure
JP2016051906A (en) * 2014-08-28 2016-04-11 ラピスセミコンダクタ株式会社 High frequency amplifier circuit
WO2019172168A1 (en) * 2018-03-08 2019-09-12 日本電信電話株式会社 Amplifier circuit

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