JP6137744B2 - 磁気抵抗素子及び磁気メモリ - Google Patents
磁気抵抗素子及び磁気メモリ Download PDFInfo
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- JP6137744B2 JP6137744B2 JP2013051933A JP2013051933A JP6137744B2 JP 6137744 B2 JP6137744 B2 JP 6137744B2 JP 2013051933 A JP2013051933 A JP 2013051933A JP 2013051933 A JP2013051933 A JP 2013051933A JP 6137744 B2 JP6137744 B2 JP 6137744B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 98
- 229910052748 manganese Inorganic materials 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- 229910052720 vanadium Inorganic materials 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 271
- 230000004888 barrier function Effects 0.000 description 85
- 230000005415 magnetization Effects 0.000 description 58
- 239000011572 manganese Substances 0.000 description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 238000003860 storage Methods 0.000 description 27
- 238000004458 analytical method Methods 0.000 description 25
- 239000010936 titanium Substances 0.000 description 23
- 229910019236 CoFeB Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 12
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 101150071665 img2 gene Proteins 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910019923 CrOx Inorganic materials 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000013016 damping Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 101150013335 img1 gene Proteins 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910020707 Co—Pt Inorganic materials 0.000 description 2
- 229910003110 Mg K Inorganic materials 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
以下、図面を参照しながら、本実施形態について詳細に説明する。以下の説明において、同一の機能及び構成を有する要素については、同一符号を付し、重複する説明は必要に応じて行う。
図1を用いて、実施形態の磁気抵抗素子の構造について、説明する。
例えば、トンネルバリア層12は、スパッタ法によって、磁性層上に堆積される。例えば、所定の組成比のMgと不純物Xとの金属(合金)ターゲット、又は、所定の組成比のMgと不純物Xとの酸化物(金属酸化物)ターゲットを、酸素及びアルゴンによって、スパッタリングすることによって、Mgと不純物Xとを含む金属酸化物を主成分とするトンネルバリア層が形成される。そのトンネルバリア層を含む積層構造が、上部電極をハードマスクとしたイオンミリングによって、所定の形状に加工され、本実施形態のMTJ素子が、形成される。
図2乃至図6を参照して、実施形態の磁気抵抗素子(MTJ素子)の素子特性について、説明する。
図7及び図8を参照して、実施形態の磁気抵抗素子の適用例について、説明する。尚、上述の実施形態で述べた構成と実質的に同じ構成に関しては、同じ符号を付し、その構成の説明は、必要に応じて行う。
上述の実施形態の磁気抵抗素子において、垂直磁化膜を例示した。但し、MTJ素子のトンネルバリア層に、Mn、Ti及びVのうち少なくとも1つが添加されたMgO膜、又は、Mn、Ti、V、Cu及びBのうち少なくとも1つが添加されたMgFeO膜が用いられていれば、そのトンネルバリア層を挟む記憶層及び参照層としての磁性層に関して、磁性層の磁化の向きが膜面に対して平行方向を向いている平行磁化膜(面内磁化膜)がMTJ素子に用いられた場合においても、上述の効果が得られる。
Claims (6)
- 第1の磁性層と、
第2の磁性層と、
前記第1の磁性層と前記第2の磁性層との間に設けられたMgFeO層と、
を具備し、
前記MgFeO層は、Ti、V、Mn及びCuからなるグループから選択される少なくとも1つを含み、
前記MgFeO層は、前記第1及び第2の磁性層に接触する、
磁気抵抗素子。 - 前記第1及び第2の磁性層のうち少なくとも一方は、Feを含む、請求項1に記載の磁気抵抗素子。
- 前記第1及び第2の磁性層のうち少なくとも一方は、前記MgFeO層が含む金属元素と同じ金属元素を含む、請求項1に記載の磁気抵抗素子。
- 前記第1の磁性層と前記MgFeO層との間のFeの濃度及び前記第2の磁性層と前記MgFeO層との間のFeの濃度のうち少なくとも一方が、前記MgFeO層の中心におけるFeの濃度より高い、請求項1乃至3のいずれか1項に記載の磁気抵抗素子。
- 前記MgFeO層は、微結晶層である、請求項1乃至4のいずれか1項に記載の磁気抵抗素子。
- 請求項1乃至5のいずれか1項に記載の磁気抵抗素子を含むメモリセルを具備する磁気
メモリ。
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JP2013051933A JP6137744B2 (ja) | 2013-03-14 | 2013-03-14 | 磁気抵抗素子及び磁気メモリ |
US14/193,340 US9437810B2 (en) | 2013-03-14 | 2014-02-28 | Magnetoresistive element and magnetic memory |
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JP6137744B2 true JP6137744B2 (ja) | 2017-05-31 |
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US10026888B2 (en) * | 2014-08-06 | 2018-07-17 | Toshiba Memory Corporation | Magnetoresistive effect element and magnetic memory |
US11114611B2 (en) * | 2015-04-03 | 2021-09-07 | Yimin Guo | Method to make MRAM with small footprint |
US9362489B1 (en) * | 2015-04-24 | 2016-06-07 | Yimin Guo | Method of making a magnetoresistive element |
US9608199B1 (en) * | 2015-09-09 | 2017-03-28 | Kabushiki Kaisha Toshiba | Magnetic memory device |
US9966901B2 (en) | 2015-11-19 | 2018-05-08 | Samsung Electronics Co., Ltd. | Spin-torque oscillator based on easy-cone anisotropy |
US9963780B2 (en) * | 2015-12-03 | 2018-05-08 | International Business Machines Corporation | Growth of metal on a dielectric |
US10050192B2 (en) * | 2015-12-11 | 2018-08-14 | Imec Vzw | Magnetic memory device having buffer layer |
JP2018157033A (ja) * | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 磁気抵抗素子および磁気メモリ |
JP7186622B2 (ja) * | 2019-01-11 | 2022-12-09 | Tdk株式会社 | 磁気抵抗効果素子及び磁気抵抗効果素子を製造する方法 |
US12075629B2 (en) * | 2019-03-20 | 2024-08-27 | Kioxia Corporation | Magnetic memory device with nonmagnetic layer having two additive elements |
CN110061128B (zh) * | 2019-05-20 | 2023-05-23 | 中国科学院微电子研究所 | 一种磁隧道结的形成方法及磁阻式随机存储器 |
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JP2007048972A (ja) * | 2005-08-10 | 2007-02-22 | Tdk Corp | 磁気抵抗効果素子、基体、ウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、磁気メモリ素子、磁気センサアセンブリ、および磁気抵抗効果素子の製造方法 |
US20070096229A1 (en) | 2005-10-28 | 2007-05-03 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory device |
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JP2009239121A (ja) | 2008-03-27 | 2009-10-15 | Toshiba Corp | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
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KR101255474B1 (ko) | 2008-12-10 | 2013-04-16 | 가부시키가이샤 히타치세이사쿠쇼 | 자기 저항 효과 소자, 그것을 이용한 자기 메모리 셀 및 자기 랜덤 액세스 메모리 |
JP2010147213A (ja) | 2008-12-18 | 2010-07-01 | Fujitsu Ltd | 磁気抵抗効果素子とその製造方法、磁気再生ヘッド、および情報記憶装置 |
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