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FR2931011B1 - Element magnetique a ecriture assistee thermiquement - Google Patents

Element magnetique a ecriture assistee thermiquement

Info

Publication number
FR2931011B1
FR2931011B1 FR0852996A FR0852996A FR2931011B1 FR 2931011 B1 FR2931011 B1 FR 2931011B1 FR 0852996 A FR0852996 A FR 0852996A FR 0852996 A FR0852996 A FR 0852996A FR 2931011 B1 FR2931011 B1 FR 2931011B1
Authority
FR
France
Prior art keywords
magnetic element
thermally assisted
assisted writing
writing
thermally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0852996A
Other languages
English (en)
Other versions
FR2931011A1 (fr
Inventor
Bernard Dieny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0852996A priority Critical patent/FR2931011B1/fr
Priority to JP2011508019A priority patent/JP2011521391A/ja
Priority to CN2009801165615A priority patent/CN102017005A/zh
Priority to PCT/IB2009/051715 priority patent/WO2009136313A1/fr
Priority to EP09742486.5A priority patent/EP2281289B1/fr
Publication of FR2931011A1 publication Critical patent/FR2931011A1/fr
Application granted granted Critical
Publication of FR2931011B1 publication Critical patent/FR2931011B1/fr
Priority to US12/905,346 priority patent/US8208295B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
FR0852996A 2008-05-06 2008-05-06 Element magnetique a ecriture assistee thermiquement Active FR2931011B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0852996A FR2931011B1 (fr) 2008-05-06 2008-05-06 Element magnetique a ecriture assistee thermiquement
JP2011508019A JP2011521391A (ja) 2008-05-06 2009-04-27 熱アシスト磁気書き込み素子
CN2009801165615A CN102017005A (zh) 2008-05-06 2009-04-27 热辅助磁写入元件
PCT/IB2009/051715 WO2009136313A1 (fr) 2008-05-06 2009-04-27 Elément d'écriture magnétique à assistance thermique
EP09742486.5A EP2281289B1 (fr) 2008-05-06 2009-04-27 Elément d'écriture magnétique à assistance thermique
US12/905,346 US8208295B2 (en) 2008-05-06 2010-10-15 Heat assisted magnetic write element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852996A FR2931011B1 (fr) 2008-05-06 2008-05-06 Element magnetique a ecriture assistee thermiquement

Publications (2)

Publication Number Publication Date
FR2931011A1 FR2931011A1 (fr) 2009-11-13
FR2931011B1 true FR2931011B1 (fr) 2010-05-28

Family

ID=39683552

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0852996A Active FR2931011B1 (fr) 2008-05-06 2008-05-06 Element magnetique a ecriture assistee thermiquement

Country Status (6)

Country Link
US (1) US8208295B2 (fr)
EP (1) EP2281289B1 (fr)
JP (1) JP2011521391A (fr)
CN (1) CN102017005A (fr)
FR (1) FR2931011B1 (fr)
WO (1) WO2009136313A1 (fr)

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Also Published As

Publication number Publication date
US8208295B2 (en) 2012-06-26
EP2281289A1 (fr) 2011-02-09
JP2011521391A (ja) 2011-07-21
EP2281289B1 (fr) 2017-07-12
CN102017005A (zh) 2011-04-13
WO2009136313A1 (fr) 2009-11-12
FR2931011A1 (fr) 2009-11-13
US20110044099A1 (en) 2011-02-24

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