JP5409007B2 - 高効率の太陽電池及びその調製方法 - Google Patents
高効率の太陽電池及びその調製方法 Download PDFInfo
- Publication number
- JP5409007B2 JP5409007B2 JP2008538804A JP2008538804A JP5409007B2 JP 5409007 B2 JP5409007 B2 JP 5409007B2 JP 2008538804 A JP2008538804 A JP 2008538804A JP 2008538804 A JP2008538804 A JP 2008538804A JP 5409007 B2 JP5409007 B2 JP 5409007B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- passivation layer
- solar cell
- conductive semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 63
- 238000002161 passivation Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
(a)第1導電型半導体基板上に、前記基板とは反対の導電型の第2導電型半導体層を形成し、それによってそれらの間の界面にp−n接合を形成する段階、
(b)前記第2導電型半導体層上に酸窒化シリコンのパッシベーション層を形成する段階、
(c)前記パッシベーション層上に窒化シリコンの反射防止層を形成する段階、
(d)前記第1導電型半導体基板の後方表面上に電極を形成する段階、
(e)前記反射防止層上に、前記第2導電型半導体層に接続される電極を形成する段階。
本発明は以下の例を参照してより詳細に説明されるであろう。これらの例は本発明を説明するためだけに提供され、本発明の範囲及び精神を制限するものであると解釈されるべきではない。
リン−ドープn型エミッタ層がホウ素ドープp型シリコン基板上に形成され、p−n接合が形成された。パッシベーション層としての酸窒化シリコン(SiOxNy)がn型エミッタ層上に、PECVD法によって、30nmの厚みで堆積された。その後、反射防止層としての屈折率1.9を有する窒化シリコン(SiNx)が、PECVD法によって、酸窒化シリコンパッシベーション層上に堆積された。その後、Al−含有ペーストはp型シリコン基板上にスクリーン印刷され、Ag−含有ペーストは窒化シリコン層上にスクリーン印刷され、それによってパターンを形成した。結果として得られる構造体は約800℃で約30秒間焼成され、p型シリコン基板に接続された背面電極及びn型エミッタ層に接続された前面電極を同時に形成し、それによって太陽電池が作製された。
太陽電池は、パッシベーション層としての酸窒化シリコンの代わりに二酸化シリコン(SiO2)がn型エミッタ層上に堆積されたこと以外は、例1と同様の方法で作製された。
太陽電池は、酸窒化シリコンパッシベーション層がn型エミッタ層上に堆積されなかったこと以外は、例1と同じ方法で作製された。
実施例1、比較例1及び2で作製された太陽電池の効率を測定するため、解放電圧(Voc)及び短絡回路電流(Jsc)が各々測定された。その後、このように測定されたVoc及びJscの値に基づき、曲線因子(FF)及び太陽電池効率が測定された。得られた結果は表1に説明される。ここで、曲線因子(FF)は(Vmp×Jmp)/(Voc×Jsc)として定義され、Jmp及びVmpは電流密度及び最大出力点における電圧を表す。太陽電池効率はPmax/Pinで与えられ、Pmaxは電池によって生成される最大出力を表し、システム内部への入力パワー、Pin、は入射光強度、すなわち単位時間あたりシステムに供給される光エネルギー、で定義される。
12 第2導電型半導体層
13 p−n接合
14 パッシベーション層
15 反射防止層
21 背面電極
22 前面電極
Claims (6)
- 第1導電型半導体基板、
前記第1導電型半導体基板の上に形成され、前記第1導電型とは反対の導電型を有する第2導電型半導体層、
前記第2導電型半導体層の上に直接接触され、SiOxNyで形成されたパッシベーション層、
前記パッシベーション層の上に窒化シリコンで連続的に形成された反射防止層、
前記第1導電型半導体基板と接触する背面電極、
前記反射防止層及び前記パッシベーション層を通って前記第2導電型半導体層と接触する前面電極、を含み、
二重反射膜構造体は前記パッシベーション層と前記反射防止層とを含み、
前記パッシベーション層の厚みが1から40nmである、
二重反射膜構造体の太陽電池。 - 前記反射防止層の屈折率が1.9から2.3である、請求項1に記載の太陽電池。
- 前記第1導電型半導体基板はp型シリコン基板であり、前記第2導電型半導体層はn型エミッタ層である、請求項1に記載の太陽電池。
- (a)第1導電型半導体基板上に、前記第1導電型とは反対の導電型の第2導電型半導体層を形成し、それによってそれらの間の界面にp−n接合を形成する段階と、
(b)前記第2導電型半導体層上に直接酸窒化シリコンのパッシベーション層を形成する段階と、
(c)前記パッシベーション層上に窒化シリコンの反射防止層を形成する段階と、
(d)前記第1導電型半導体基板の後方表面上に電極を形成する段階と、
(e)前記反射防止層及び前記パッシベーション層を通って前記第2導電型半導体層に接続される電極を形成する段階と、を含み、
前記(b)及び(c)がプラズマ化学気相成長法(PECVD)によって連続的に形成され二重反射膜構造体を形成する、
二重反射膜構造体を有する太陽電池の製造方法。 - 前記第1導電型半導体基板はp型シリコン基板であり、前記第2導電型半導体層はn型エミッタ層である、請求項4に記載の方法。
- 前記前面電極は前記反射防止層の上部の上への銀(Ag)含有ペーストのスクリーン印刷によって、及び印刷されたペーストを焼成することによって形成され、前記背面電極は前記第1導電型半導体基板上へのアルミニウム(Al)含有ペーストのスクリーン印刷によって、及び印刷されたペーストを焼成することによって形成される、請求項4に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0106220 | 2005-11-08 | ||
KR20050106220 | 2005-11-08 | ||
PCT/KR2006/004439 WO2007055484A1 (en) | 2005-11-08 | 2006-10-30 | Solar cell of high efficiency and process for preparation of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009515336A JP2009515336A (ja) | 2009-04-09 |
JP5409007B2 true JP5409007B2 (ja) | 2014-02-05 |
Family
ID=38023440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008538804A Active JP5409007B2 (ja) | 2005-11-08 | 2006-10-30 | 高効率の太陽電池及びその調製方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070175508A1 (ja) |
EP (1) | EP1949450B1 (ja) |
JP (1) | JP5409007B2 (ja) |
KR (1) | KR100877817B1 (ja) |
CN (2) | CN101840962A (ja) |
TW (1) | TWI368997B (ja) |
WO (1) | WO2007055484A1 (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100900443B1 (ko) * | 2006-11-20 | 2009-06-01 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법 |
KR100974220B1 (ko) * | 2006-12-13 | 2010-08-06 | 엘지전자 주식회사 | 태양전지 |
TWI394290B (zh) * | 2006-12-18 | 2013-04-21 | Delta Electronics Inc | 電激發光裝置及其製造方法 |
US20080241356A1 (en) * | 2007-04-02 | 2008-10-02 | Jianming Fu | Photovoltaic devices manufactured using crystalline silicon thin films on glass |
ES2354400T3 (es) | 2007-05-07 | 2011-03-14 | Georgia Tech Research Corporation | Formación de un contacto posterior de alta calidad con un campo en la superficie posterior local serigrafiada. |
US20090126786A1 (en) * | 2007-11-13 | 2009-05-21 | Advent Solar, Inc. | Selective Emitter and Texture Processes for Back Contact Solar Cells |
US20090260685A1 (en) * | 2008-04-17 | 2009-10-22 | Daeyong Lee | Solar cell and method of manufacturing the same |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
US7964499B2 (en) * | 2008-05-13 | 2011-06-21 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor solar cells having front surface electrodes |
KR100984701B1 (ko) * | 2008-08-01 | 2010-10-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
AU2010213356B2 (en) | 2009-02-11 | 2015-05-28 | Newsouth Innovations Pty Limited | Photovoltaic device structure and method |
JP5334645B2 (ja) * | 2009-03-31 | 2013-11-06 | 富士フイルム株式会社 | 可撓性太陽電池モジュール |
CN101866956B (zh) * | 2009-04-16 | 2013-02-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种减反射膜及其制备方法 |
CN102460654A (zh) * | 2009-04-17 | 2012-05-16 | 转换太阳能股份有限公司 | 细长太阳能电池和边缘接触 |
JP5152407B2 (ja) * | 2009-04-29 | 2013-02-27 | 三菱電機株式会社 | 太陽電池セルおよびその製造方法 |
US20100275995A1 (en) * | 2009-05-01 | 2010-11-04 | Calisolar, Inc. | Bifacial solar cells with back surface reflector |
DE102009025977A1 (de) | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
KR101303857B1 (ko) * | 2009-07-07 | 2013-09-04 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
EP2293351B1 (en) * | 2009-09-07 | 2017-04-12 | Lg Electronics Inc. | Solar cell |
DE102009044052A1 (de) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls |
EP2478571A4 (en) * | 2009-09-18 | 2014-03-19 | Air Liquide | SOLAR CELL WITH ENHANCED PERFORMANCE |
US20110094574A1 (en) * | 2009-10-27 | 2011-04-28 | Calisolar Inc. | Polarization Resistant Solar Cell Design Using SiCN |
KR101155890B1 (ko) * | 2009-10-28 | 2012-06-20 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
TWI514608B (zh) * | 2010-01-14 | 2015-12-21 | Dow Global Technologies Llc | 具曝露式導電柵格之防溼光伏打裝置 |
CN102812558B (zh) * | 2010-02-09 | 2015-09-09 | 陶氏环球技术有限责任公司 | 具有改善的屏障膜粘附的抗湿光伏器件 |
KR101113205B1 (ko) * | 2010-04-08 | 2012-02-20 | (주)퓨쳐 라이팅 | 태양전지를 이용한 자전거 거치대 |
CN101814541B (zh) * | 2010-04-09 | 2012-07-18 | 上海交通大学 | 表面分布有金属纳米线的硅太阳电池 |
KR101579320B1 (ko) * | 2010-05-12 | 2015-12-21 | 엘지전자 주식회사 | 태양 전지 |
KR20120011337A (ko) * | 2010-07-19 | 2012-02-08 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
DE102010060339A1 (de) * | 2010-11-04 | 2012-05-10 | Q-Cells Se | Solarzelle und Solarzellenherstellungsverfahren |
KR101745683B1 (ko) * | 2011-01-14 | 2017-06-09 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN102651425B (zh) * | 2011-02-25 | 2015-02-25 | 昱晶能源科技股份有限公司 | 太阳能电池的制造方法 |
CN103022166A (zh) * | 2011-09-28 | 2013-04-03 | 杭州赛昂电力有限公司 | 以覆铜铝线为背极的太阳能电池及其生产工艺 |
GB201209694D0 (en) | 2012-05-31 | 2012-07-18 | Dow Corning | Passivation of silicon dielectric interface |
GB201209693D0 (en) | 2012-05-31 | 2012-07-18 | Dow Corning | Silicon wafer coated with a passivation layer |
CN102683504B (zh) * | 2012-06-05 | 2015-08-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 通过离子注入砷改进晶体硅太阳能电池制作工艺的方法 |
CN102800760A (zh) * | 2012-08-29 | 2012-11-28 | 英利能源(中国)有限公司 | 一种多层氮化硅减反膜太阳能电池制作方法 |
CN103779430A (zh) * | 2012-10-26 | 2014-05-07 | 上海比亚迪有限公司 | 一种晶体硅太阳电池的导电减反射膜和晶体硅太阳电池 |
CN103107240B (zh) * | 2012-12-06 | 2016-08-03 | 杭州赛昂电力有限公司 | 多晶硅薄膜太阳能电池及其制作方法 |
US9018516B2 (en) | 2012-12-19 | 2015-04-28 | Sunpower Corporation | Solar cell with silicon oxynitride dielectric layer |
TWI513018B (zh) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | 具抗反射層之太陽能電池及其製程方法 |
US20160155868A1 (en) * | 2013-07-25 | 2016-06-02 | Namics Corporation | Crystalline silicon solar cell and method for producing same |
CN103943718A (zh) * | 2014-03-19 | 2014-07-23 | 晶澳(扬州)太阳能科技有限公司 | 一种制备抗pid薄膜的方法 |
WO2015178305A1 (ja) * | 2014-05-23 | 2015-11-26 | シャープ株式会社 | 光電変換素子及びその製造方法 |
JP6700654B2 (ja) * | 2014-10-21 | 2020-05-27 | シャープ株式会社 | ヘテロバックコンタクト型太陽電池とその製造方法 |
KR102649295B1 (ko) * | 2018-05-02 | 2024-03-18 | 삼성전자주식회사 | 광전자 소자 및 이를 포함하는 이미지 센서와 전자 장치 |
CN109216473B (zh) | 2018-07-20 | 2019-10-11 | 常州大学 | 一种晶硅太阳电池的表界面钝化层及其钝化方法 |
CN113097346A (zh) * | 2021-04-20 | 2021-07-09 | 山西潞安太阳能科技有限责任公司 | 一种适用于硅电池背面叠层膜钝化结构 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4144094A (en) * | 1975-01-06 | 1979-03-13 | Motorola, Inc. | Radiation responsive current generating cell and method of forming same |
JPS59143372A (ja) * | 1983-02-03 | 1984-08-16 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPH0691268B2 (ja) * | 1985-03-28 | 1994-11-14 | 松下電子工業株式会社 | 受光素子 |
DE3536299A1 (de) * | 1985-10-11 | 1987-04-16 | Nukem Gmbh | Solarzelle aus silizium |
DE3725346A1 (de) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle |
US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
JPH02216874A (ja) * | 1989-02-17 | 1990-08-29 | Hitachi Ltd | シリコン結晶太陽電池 |
JP2989923B2 (ja) * | 1991-03-25 | 1999-12-13 | 京セラ株式会社 | 太陽電池素子 |
JP3006266B2 (ja) * | 1992-03-10 | 2000-02-07 | トヨタ自動車株式会社 | 太陽電池素子 |
JP3722326B2 (ja) | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
US6518200B2 (en) | 2001-06-07 | 2003-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graded composite layer and method for fabrication thereof |
KR100852700B1 (ko) | 2002-04-03 | 2008-08-19 | 삼성에스디아이 주식회사 | 고효율 태양전지 및 그 제조 방법 |
JP2005116740A (ja) * | 2003-10-07 | 2005-04-28 | Sharp Corp | プラズマプロセス装置 |
JP2004247364A (ja) * | 2003-02-12 | 2004-09-02 | Hitachi Cable Ltd | 結晶系シリコン太陽電池の製造方法 |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
KR20050087248A (ko) * | 2004-02-26 | 2005-08-31 | 삼성에스디아이 주식회사 | 이층 반사방지막을 사용하는 태양전지 및 그 제조방법 |
JP4535767B2 (ja) * | 2004-04-26 | 2010-09-01 | 京セラ株式会社 | 光電変換装置およびその製造方法ならびに光発電装置 |
US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
-
2006
- 2006-10-30 JP JP2008538804A patent/JP5409007B2/ja active Active
- 2006-10-30 CN CN201010178414A patent/CN101840962A/zh active Pending
- 2006-10-30 WO PCT/KR2006/004439 patent/WO2007055484A1/en active Application Filing
- 2006-10-30 KR KR1020060105386A patent/KR100877817B1/ko active IP Right Grant
- 2006-10-30 EP EP06812279.5A patent/EP1949450B1/en active Active
- 2006-10-30 CN CN2006800415037A patent/CN101305472B/zh active Active
- 2006-10-31 TW TW095140304A patent/TWI368997B/zh not_active IP Right Cessation
- 2006-11-08 US US11/557,794 patent/US20070175508A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101305472B (zh) | 2011-07-13 |
TWI368997B (en) | 2012-07-21 |
WO2007055484A1 (en) | 2007-05-18 |
KR20070049555A (ko) | 2007-05-11 |
CN101840962A (zh) | 2010-09-22 |
EP1949450A4 (en) | 2012-08-01 |
KR100877817B1 (ko) | 2009-01-12 |
US20070175508A1 (en) | 2007-08-02 |
TW200723553A (en) | 2007-06-16 |
EP1949450B1 (en) | 2015-01-21 |
EP1949450A1 (en) | 2008-07-30 |
CN101305472A (zh) | 2008-11-12 |
JP2009515336A (ja) | 2009-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5409007B2 (ja) | 高効率の太陽電池及びその調製方法 | |
KR100976454B1 (ko) | 태양 전지 및 이의 제조 방법 | |
KR101000064B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
TWI398004B (zh) | 太陽能電池及其製備方法 | |
KR100974226B1 (ko) | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 | |
JP3998619B2 (ja) | 光起電力素子およびその製造方法 | |
KR101860919B1 (ko) | 태양 전지 및 이의 제조 방법 | |
JP2008021993A (ja) | 全背面接点構成を含む光起電力デバイス及び関連する方法 | |
WO2010064303A1 (ja) | 太陽電池セルの製造方法 | |
JP3205613U (ja) | ヘテロ接合太陽電池構造 | |
US20100126569A1 (en) | Solar cell and method of fabricating the same | |
KR101886818B1 (ko) | 이종 접합 실리콘 태양 전지의 제조 방법 | |
TWI424582B (zh) | 太陽能電池的製造方法 | |
KR101076611B1 (ko) | 태양 전지 및 그 제조 방법 | |
JP2023507176A (ja) | 両面タンデム太陽電池とモジュール | |
KR20090075421A (ko) | 태양 전지 | |
KR102405082B1 (ko) | 저온 소성 도전성 페이스트를 이용한 태양전지의 전극 제조 방법 | |
KR101622088B1 (ko) | 태양전지 | |
KR101155890B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR101898996B1 (ko) | 전하 선택 접합 실리콘 태양 전지 | |
JP5645734B2 (ja) | 太陽電池素子 | |
CN117321776A (zh) | 多结太阳能电池 | |
KR101322628B1 (ko) | 태양전지의 후면반사막 형성방법, 이를 포함하는후면전극부 형성방법 및 태양전지의 제조방법 | |
KR20160097919A (ko) | 태양 전지 | |
KR101612959B1 (ko) | 태양 전지 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090402 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091030 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120413 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120913 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130402 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130802 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130912 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131008 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131105 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5409007 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |