JP2018530166A - 基板アセンブリの製造方法、基板アセンブリ、及び基板アセンブリを電子部品に取り付ける方法 - Google Patents
基板アセンブリの製造方法、基板アセンブリ、及び基板アセンブリを電子部品に取り付ける方法 Download PDFInfo
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- JP2018530166A JP2018530166A JP2018517696A JP2018517696A JP2018530166A JP 2018530166 A JP2018530166 A JP 2018530166A JP 2018517696 A JP2018517696 A JP 2018517696A JP 2018517696 A JP2018517696 A JP 2018517696A JP 2018530166 A JP2018530166 A JP 2018530166A
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Abstract
【選択図】図3
Description
第1の面及び第2の面を有した基板を準備する工程と、
基板の第1の面に接触材料層を塗布する工程と、
少なくとも、基板とは反対方向に面する接触材料層の面の一部分に、予備固定剤を塗布する工程と、を含む。
基板の第1の面が電子部品に面するように、基板アセンブリと少なくとも1つの電子部品とを互いに位置決めすることと、
接触材料層の面の少なくとも一部分に予備固定剤を塗布することによって、少なくとも1つの電子部品と基板アセンブリとをあらかじめ固定することと、
基板アセンブリを少なくとも1つの電子部品に取り付けることと、を含む。
11 基板
12 第1の面
13 第2の面
15 接触材料層
16 接触材料層の第1の面
18 予備固定剤
19 縁
20 担体
25 切欠き
30、30´ 電子部品
31 電子部品の第1の面
32 電子部品の第2の面
40 ノズル
bS 基板の全幅
bR 縁の幅
Claims (18)
- 電子部品(30、30´)に取り付ける基板アセンブリ(10、10´、10´´)を製造する方法であって、
第1の面(12)及び第2の面(13)を有する基板(11)を準備する工程と、
前記基板(11)の前記第1の面(12)に接触材料層(15)を塗布する工程と、
少なくとも、前記基板(11)とは反対方向に面する接触材料層(15)の面(16)の一部分に、予備固定剤(18)を塗布する工程と、
を含む前記方法。 - 前記基板(11)が、金属板又は金属バンド部分であり、具体的には、銅板若しくは銅バンド部分、又はリードフレーム、又はDCB基板若しくはPCB基板である
ことを特徴とする、請求項1に記載の方法。 - 準備される前記基板(11)、又は基板ブランクに、具体的には、金(Au)若しくはニッケル‐金(NiAu)、又は銀(Ag)若しくはニッケル‐銀(NiAg)、又はニッケル‐パラジウム‐金(NiPdAu)を含む材料が、具体的には亜鉛めっき又は化学めっきによって、少なくとも1つの面(12、13)に被覆される
ことを特徴とする、請求項1又は2に記載の方法。 - 前記基板(11)に塗布される前記接触材料層(15)の層厚さが、10〜150μm、具体的には30〜100μm、更に具体的には40〜80μmである
ことを特徴とする、請求項1から3の何れか一項に記載の方法。 - 前記接触材料層(15)が塗布された後、前記基板(11)は、側縁を有さないか、又は接触材料層(15)が塗布されていない側縁(19)を有し、前記側縁(19)の幅(bR)が、具体的には前記基板(11)の全幅(bS)の20%以下、具体的には前記基板(11)の全幅(bS)の10%以下、具体的には前記基板(11)の全幅(bS)の5%以下、具体的には前記基板(11)の全幅(bS)の1%以下の幅である
ことを特徴とする、請求項1から4の何れか一項に記載の方法。 - 前記基板(11)の前記第1の面(12)が担体(20)に面するように、接触材料層(15)が塗布され、前記担体(20)、具体的にはキャリアフィルム上に予備固定剤(18)が塗布された基板(11)を配置し、前記予備固定剤(18)が、少なくとも前記担体(20)と接着結合される
ことを特徴とする、請求項1から5の何れか一項に記載の方法。 - 前記基板(11)の側縁(19)の少なくとも一部分が、好ましくは前記担体(20)に取り付けられた状態において、切り離され、及び/又は、前記基板(11)が、好ましくは前記担体(20)に取り付けられた状態において、構築され及び/又は分離される
ことを特徴とする、請求項1から6の何れか一項、具体的には請求項6に記載の方法。 - 前記側縁(19)の切り離し、及び/又は前記基板(11)の構築、及び/又は前記基板(11)の分離が、レーザによって行われる
ことを特徴とする、請求項7に記載の方法。 - 前記側縁(19)が切り離されるとき、及び/又は前記基板(11)が構築されるとき、及び/又は前記基板(11)が分離されるとき、前記接触材料層(15)及び/又は前記予備固定剤(18)の少なくとも一部分が、取り外され、及び/又は構築され、及び/又は分離される
ことを特徴とする、請求項7又は8に記載の方法。 - 前記接触材料層(15)の接触材料が、焼結助剤と、金属粒子、具体的には銀粒子と、を含み、前記予備固定剤(18)が、同じ焼結助剤を含む
ことを特徴とする、請求項1から9の何れか一項に記載の方法。 - 具体的には請求項1から10の何れか一項によって製造される、電子部品(30、30´)に取り付ける基板アセンブリ(10、10´、10´´)であって、基板(11)であり、具体的には金属板又は金属バンド部分であり、銅板若しくは銅バンド部分、又はリードフレーム、又はDCB基板若しくはPCB基板であることが好ましく、第1の面(12)と第2の面(13)と有する前記基板を備え、前記基板(11)の前記第1の面(12)の少なくとも一部分に、接触材料層(15)が塗布され、前記基板(11)とは反対方向に面する接触材料層(15)の面(16)の少なくとも一部分に、予備固定剤(18)が塗布される前記基板アセンブリ。
- 前記接触材料層(15)の接触材料が、焼結助剤と、金属粒子、具体的には銀粒子と、を含み、前記予備固定剤(18)が、同じ焼結助剤を含む
ことを特徴とする、請求項11に記載の基板アセンブリ(10、10´、10´´)。 - 前記基板(11)に、具体的には、金(Au)若しくはニッケル‐金(NiAu)、又は銀(Ag)若しくはニッケル‐銀(NiAg)、又はニッケル‐パラジウム‐金(NiPdAu)を含む材料が、具体的には亜鉛めっき又は化学めっきによって、少なくとも1つの面(12、13)に被覆される
ことを特徴とする、請求項11又は12に記載の基板アセンブリ(10、10´、10´´)。 - 特にキャリアフィルムとして具体化される担体(20)が、少なくとも予備固定剤(18)と接着結合される
ことを特徴とする、請求項11から13の何れか一項に記載の基板アセンブリ(10、10´、10´´)。 - 前記基板(11)の前記第1の面(12)が、接触材料層(15)により完全に覆われるか、又は、前記基板は、接触材料層(15)が塗布されていない側縁(19)を有し、前記側縁(19)の幅(bR)が、具体的には前記基板(11)の全幅(bS)の20%以下、具体的には前記基板(11)の全幅(bS)の10%以下、具体的には前記基板(11)の全幅(bS)の5%以下、具体的には前記基板(11)の全幅(bS)の1%以下の幅である
ことを特徴とする、請求項11から14の何れか一項に記載の基板アセンブリ(10、10´、10´´)。 - 少なくとも1つの電子部品(30、30´)を、基板アセンブリ(10、10´、10´´)、具体的には、請求項11から15の何れか一項に記載の基板アセンブリ(10、10´、10´´)、及び/又は請求項1から10の何れか一項に記載の方法によって製造された基板アセンブリ(10、10´、10´´)に取り付ける方法であって、
基板(11)の第1の面(12)が前記少なくとも1つの電子部品(30、30´)に面するように、前記基板アセンブリ(10、10´、10´´)と前記少なくとも1つの電子部品(30、30´)とを互いに位置決めすることと、
接触材料層(15)の面(16)の少なくとも一部分に予備固定剤(18)を塗布することによって、前記少なくとも1つの電子部品(30、30´)と前記基板アセンブリ(10、10´、10´´)とをあらかじめ固定することと、
前記基板アセンブリ(10、10´)を前記少なくとも1つの電子部品(30、30´)に取り付けることと、
を含む前記方法。 - 前記基板(11)が、具体的には前記基板アセンブリ(10、10´、10´´)と前記電子部品(30、30´)とが互いに位置決めされる前に、塗布された接触材料層(15)及び塗布された予備固定剤(18)とともに、担体(20)から取り外される
ことを特徴とする、請求項16に記載の方法。 - 少なくとも1つの電子部品(30、30´)への取り付け時に、前記基板アセンブリ(10、10´、10´´)が、前記少なくとも1つの電子部品とともに、焼結され、及び/又は加圧され、及び/又ははんだ付けされ、及び/又は接着結合される
ことを特徴とする、請求項16又は17に記載の方法。
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