JP2012134910A - Temperature control circuit, thermostatic oven type piezoelectric oscillator, electronic equipment, and temperature control method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature control circuit capable of reducing a temperature control deviation over a wide temperature range with ease, and to provide a thermostatic oven type piezoelectric oscillator, electronic equipment, and a temperature control method.SOLUTION: A differential amplifier 20 (an example of an amplifier) performs first control for controlling a calorific value of a power transistor 30 based on a detection value of an NTC (Negative Temperature Coefficient) thermistor 11 (an example of a first thermosensor) installed in the vicinity of a heated object or the power transistor 30, and performs second control and third control for controlling the calorific value of the power transistor 30 based on the respective detection values of an NTC thermistor 12 (an example of a second thermosensor) and an NTC thermistor 13 (an example of a third thermosensor) installed separately from the heated object and the power transistor 30 respectively. In particular, the differential amplifier 20 increases the percentage of the second control as the temperature detected by the NTC thermistor 12 becomes low, and increases the percentage of the third control as the temperature detected by the NTC thermistor 13 becomes high.

Description

  The present invention relates to a temperature control circuit, a thermostatic chamber type piezoelectric oscillator, an electronic device, and a temperature control method.

  A crystal oscillator used for a reference frequency signal source such as a communication device or a measuring instrument is required to have a stable output frequency with high accuracy against a temperature change. In general, an oven controlled crystal oscillator (OCXO) is known as a crystal oscillator that can achieve extremely high frequency stability. OCXO has a crystal unit housed in a constant temperature chamber controlled at a constant temperature. In order to achieve extremely high frequency stability, the temperature control deviation of the constant temperature chamber with respect to changes in ambient temperature is as small as possible. It is important to. For example, in Patent Document 1, a thermistor for closed loop control (main temperature control) is installed at a position close to the heater, and a thermistor for open loop control (correction control) is installed at a position away from the heater. In addition, a temperature control circuit that realizes extremely high-precision temperature control by correcting a temperature control deviation generated by closed loop control by open loop control has been proposed. By using this temperature control circuit, OCXO with extremely high frequency stability can be realized with respect to changes in ambient temperature.

JP 2005-165630 A

By the way, recently, for example, when a base station of a mobile phone is installed outdoors, OCXO used for the frequency signal source is in the order of 10 ⁻⁸ to 10 ⁻⁹ in a wide temperature range of −40 ° C. to + 85 ° C. In some cases, extremely high frequency stability (ppb order) is required. In order to realize frequency stability on the order of ppb, it is necessary to perform temperature control with extremely high accuracy such that the temperature control deviation is 1 ° C. or less in the range of −40 ° C. to + 85 ° C. In order to perform temperature control with such extremely high accuracy, it is advantageous to use a thermistor having relatively high sensitivity, and it is necessary to select a thermistor having appropriate sensitivity. For this reason, NTC (Negative Temperature Coefficient) thermistors are often used because of their high sensitivity and variety.

  However, when the temperature control circuit of Patent Document 1 is used using an NTC thermistor, there is no problem as long as the operating temperature range is, for example, −10 ° C. to 70 ° C., but −40 ° C. to 85 ° C. In such a wide operating temperature range, since the resistance value of the NTC thermistor changes abruptly at −40 ° C. to −10 ° C., correction control larger than the original main temperature control is added, and the temperature control There was a problem of showing abnormalities. Although the temperature control deviation on the low temperature side can be reduced by lowering the sensitivity of the NTC thermistor, conversely, the temperature control deviation on the high temperature side becomes large and the temperature control deviation is reduced over a wide temperature range. Was difficult.

  The present invention has been made in view of the above problems, and according to some aspects of the present invention, a temperature control circuit, a high-temperature bath, and a temperature control circuit that can easily reduce a temperature control deviation over a wide temperature range. Type piezoelectric oscillator, electronic device, and temperature control method can be provided.

  (1) The present invention is a temperature control circuit that controls the temperature of an object to be heated, and is close to a heating element that heats the object to be heated and a position where the temperature of the object to be heated or the heating element can be measured. A first temperature sensing element that is installed, and a second temperature sensing element and a third temperature sensing element that are separately installed at positions where the temperature around the object to be heated and the heating element can be measured; The first control for controlling the heat generation amount of the heat generating element based on the detection value of the first temperature sensing element, and the heat generation amount of the heat generation element based on the detection value of the second temperature sensing element. An amplifier for performing a third control for controlling a heat generation amount of the heat generating element based on a second control and a detection value of the third temperature sensitive element, and the amplifier includes the second temperature sensitive element. The lower the temperature detected by the sensor, the larger the ratio of the second control is, and the third temperature sensing element detects it. That higher temperature to increase the third control ratio, a temperature control circuit.

  In the temperature control circuit of the present invention, the first temperature sensing element is installed close to the object to be heated or the heating element, so that the temperature control having the first control based on the temperature of the object to be heated as the main control is performed. Done. In addition, the second temperature control element and the third temperature control element are disposed apart from the object to be heated and the heating element, so that the second control and the third control based on the ambient temperature are corrected for the main control. Is controlled. The second control is dominant as the ambient temperature is low, and the third control is dominant as the ambient temperature is high. Therefore, the sensitivity of the second control and the sensitivity of the third control are adjusted separately. Thus, the temperature control deviation can be reduced over a wide temperature range.

  (2) In this temperature control circuit, the amplifier has one input voltage that changes in accordance with a change in the detection value of the second temperature sensing element, and a change in the detection value of the third temperature sensing element. The other input voltage may be changed accordingly.

  By using the thermistor and the differential amplifier in this way, the second control and the third control can be realized with a relatively simple configuration.

  (3) The temperature control circuit further includes a resistor connected in parallel with the third temperature sensing element, and the differential control circuit according to a change in a combined resistance value of the third temperature sensing element and the resistance. The other input voltage of the amplifier may be changed.

  Thus, if the temperature change of the combined resistance value of the parallel circuit of the third temperature sensing element and the resistor is used, the third control can be realized by adjusting the sensitivity of the third temperature sensing element. .

  (4) In this temperature control circuit, the first temperature sensing element is connected in series with the second temperature sensing element, and a combined resistance value of the first temperature sensing element and the second temperature sensing element. The one input voltage of the differential amplifier may be changed in accordance with the change of.

  Thus, by using the temperature change of the combined resistance value of the first temperature sensing element and the second temperature sensing element, the sensitivity of the first temperature sensing element and the sensitivity of the second temperature sensing element can be adjusted. The first control and the second control can be efficiently realized.

  (5) In this temperature control circuit, the first temperature sensing element is connected in series with a parallel circuit of the third temperature sensing element and the resistor, and the parallel circuit and the first temperature sensing element are combined. The other input voltage of the differential amplifier may be changed in accordance with a change in resistance value.

  Thus, if the temperature change of the combined resistance value of the first temperature sensing element and the third temperature sensing element and the resistor parallel circuit is utilized, the sensitivity of the first temperature sensing element and the third temperature sensing element are obtained. By adjusting the sensitivity, the first control and the third control can be efficiently realized.

  (6) In this temperature control circuit, the second temperature sensing element and the third temperature sensing element may be a thermistor having a negative temperature coefficient and exhibiting a non-linear resistance-temperature characteristic. .

  By using such a thermistor as the second temperature sensing element and the third temperature sensing element, the lower the temperature detected by the second temperature sensing element, the larger the second control ratio becomes. Temperature control that increases the third control ratio as the temperature detected by the temperature sensing element increases can be realized relatively easily.

  (7) The present invention is a thermostatic chamber type piezoelectric oscillator including any one of the temperature control circuits described above and a piezoelectric vibrator.

  According to the present invention, it is possible to realize a thermostatic oven type piezoelectric oscillator having a small temperature control deviation over a wide temperature range and extremely high frequency stability.

  (8) The present invention is an electronic device including any one of the temperature control circuits described above.

  ADVANTAGE OF THE INVENTION According to this invention, the electronic device which can perform a highly accurate process over a wide temperature range is realizable.

  (9) The present invention is a temperature control method for controlling the temperature of an object to be heated, the heating step of heating the object to be heated using a heating element, and measuring the temperature of the object to be heated or the heating element. A first control for controlling the amount of heat generated by the heating element based on a detection value of a first temperature sensing element installed close to a position where the temperature can be measured, and the temperature around the object to be heated and the heating element is measured 2nd control which controls the emitted-heat amount of the said heat generating element based on the detected value of the 2nd temperature sensitive element installed in the position which can be separated, and it installs in the position away from the said to-be-heated object and the said heat generating element. And a third control step of controlling the amount of heat generated by the heat generating element based on a detection value of the third temperature sensitive element, wherein the second temperature sensitive element detects in the control step. The lower the temperature, the larger the ratio of the second control, and the third The higher the temperature the temperature sensor detects a high increase the third control ratio, a temperature control method.

  According to the present invention, the temperature control deviation can be reduced over a wide temperature range by separately adjusting the sensitivity of the second control and the sensitivity of the third control.

The circuit diagram of the temperature control circuit of a 1st embodiment. The flowchart figure which shows the temperature control operation | movement by closed loop control. The flowchart figure which shows the temperature control operation | movement by open loop control. The figure which shows an example of the resistance-temperature characteristic of NTC thermistor. The figure which shows the temperature characteristic of the electric potential of the non-inverting input terminal (+ input terminal) of a differential amplifier. The circuit diagram of the temperature control circuit of 2nd Embodiment. The figure which shows the outline of the structure of the thermostat type piezoelectric oscillator of this embodiment. The figure which shows an example of the temperature control characteristic of OCXO of this embodiment. The figure which shows an example of the temperature control characteristic of OCXO of a comparative example. The functional block diagram of an electronic device.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. Also, not all of the configurations described below are essential constituent requirements of the present invention.

1. Temperature control circuit 1-1. First Embodiment [Configuration]
FIG. 1 is a circuit diagram of a temperature control circuit according to the first embodiment. The NTC thermistor 11 has a first terminal connected to the external terminal 2 and a second terminal connected to the first terminal of the NTC thermistor 12. The second terminal of the NTC thermistor 12 is connected to the first terminal of the set temperature adjustment resistor 40 and the first terminal of the resistor 43, and the second terminal of the set temperature adjustment resistor 40 is connected to the external terminal 4. The second terminal of the resistor 43 is connected to the inverting input terminal (−input terminal) of the differential amplifier 20, the first terminal of the resistor 44, and the first terminal of the capacitor 50. The second terminal of the resistor 44 is connected to the output terminal of the differential amplifier 20 and the first terminal of the resistor 45, and the second terminal of the capacitor 50 is connected to the external terminal 4.

  The resistor 41 has a first terminal connected to the external terminal 2, a second terminal connected to the non-inverting input terminal (+ input terminal) 20 of the differential amplifier 20, a first terminal of the resistor 42, and a first terminal of the NTC thermistor 13. Connected to the terminal. The second terminal of the resistor 42 and the second terminal of the NTC thermistor 13 are connected to the external terminal 4.

  The second terminal of the resistor 45 is connected to the base terminal of the power transistor 30 and the first terminal of the capacitor 51, and the second terminal of the capacitor 51 is connected to the external terminal 4.

  The emitter terminal of the power transistor 30 is connected to the external terminal 3, and the collector terminal is connected to the first terminal of the resistor 46. A second terminal of the resistor 46 is connected to the external terminal 4.

  The external terminal 2 is supplied with a reference potential Vref from outside, and the external terminal 3 is supplied with a power supply potential Vcc from outside. The external terminal 4 is grounded and supplied with the ground potential GND. A capacitor 52 for removing AC noise is connected between the reference potential Vref and the ground potential GND, and a capacitor 53 for removing AC noise is connected between the power supply potential Vcc and the ground potential GND. The differential amplifier 20 is supplied with the power supply potential Vcc and the ground potential GND from the external terminal 3 and the external terminal 4, respectively.

  The power transistor 30 (an example of a heating element) is an NPN-type bipolar transistor that is installed in the vicinity of an object to be heated (not shown) and heats the object to be heated using heat radiation from a collector terminal. The heat dissipation amount (heat generation amount) of the collector terminal changes according to the amount of current flowing through the power transistor 30. The resistor 46 is a resistor for limiting the current flowing through the power transistor 30.

  The NTC thermistor 11 (an example of a first temperature sensing element) is installed close to the object to be heated or the power transistor 30 and changes the resistance value according to the temperature of the object to be heated. The NTC thermistor 12 (an example of the second temperature sensing element) and the NTC thermistor 13 (an example of the third temperature sensing element) are installed at positions away from the object to be heated and the power transistor 30, and The resistance value is changed according to the ambient temperature. For example, the NTC thermistor 11 is installed within a predetermined distance from the object to be heated or the power transistor 30 (including the case where the NTC thermistor 11 and the power transistor 30 are installed in close contact), and the NTC thermistor 12 and the NTC thermistor 13 are separated from the object to be heated and the power transistor 30. Install at a predetermined distance or more. The NTC thermistor 11 functions as a temperature sensor for closed loop control by changing the resistance value according to the temperature of the object to be heated. The NTC thermistor 12 and the NTC thermistor 13 have a resistance value according to the ambient temperature. It functions as a temperature sensor for open loop control by changing.

  The differential amplifier 20 (an example of an amplifier) is a first control that controls the amount of heat generated by the power transistor 30 based on the resistance value of the NTC thermistor 11 (the detected value of the first temperature sensing element). And the resistance value of the NTC thermistor 13 (detection value of the third temperature sensing element) based on the resistance value (detection value of the second temperature sensing element) of the power transistor 30. Based on this, the third control for controlling the heat generation amount of the power transistor 30 is performed. In particular, the differential amplifier 20 increases the ratio of the second control as the resistance value of the NTC thermistor 12 is higher (the temperature detected by the second temperature sensing element is lower), and the resistance value of the NTC thermistor 13 is increased. The ratio of the third control is increased as the temperature is lower (the temperature detected by the third temperature sensing element is higher). That is, the differential amplifier 20 increases the rate of change of the heat generation amount of the power transistor 30 based on the resistance value of the NTC thermistor 12 as the ambient temperature is lower, and is based on the resistance value of the NTC thermistor 13 as the ambient temperature is higher. The rate of change in the amount of heat generated by the power transistor 30 is increased.

  The output of the differential amplifier 20 is input to the base of the power transistor 30 through a low-pass filter composed of a resistor 45 and a capacitor 51, and the amount of current flowing through the collector terminal is controlled. The NTC thermistor 11, the NTC thermistor 12, and the set temperature adjustment resistor 40 are connected in series between the reference potential Vref and the ground potential GND. The potential of the first terminal of the resistor 43 is the NTC thermistor 11, NTC. It is determined according to the resistance ratio of the thermistor 12 and the set temperature adjustment resistor 40. A resistor 41, a parallel circuit of the resistor 42 and the NTC thermistor 13 are connected in series between the reference potential Vref and the ground potential GND, and the non-inverting input terminal (+ input terminal) of the differential amplifier 20 is connected. The potential is determined according to the resistance ratio of the resistor 41 and the combined resistance of the resistor 42 and the NTC thermistor 13.

[Temperature control operation]
Next, the operation of the temperature control circuit of this embodiment will be described.

  First, temperature control by closed loop control will be described with reference to FIG. FIG. 2 is a flowchart of temperature control by closed loop control. When the temperature of the object to be heated is lower than the set temperature (Y in S10), the object to be heated is heated while controlling the heat generation amount of the power transistor 30 according to the resistance value of the NTC thermistor 11 (S12). Specifically, when the temperature of the object to be heated matches the set temperature, the resistance value of the NTC thermistor 11 becomes a predetermined value, and the potential of the first terminal of the resistor 43 and the non-inverting input terminal (+ The potentials of the input terminals are matched. Therefore, when the temperature of the object to be heated is lower than the set temperature, the resistance value of the NTC thermistor 11 is higher than a predetermined value, so that the potential of the first terminal of the resistor 43 is the non-inverting input terminal ( It is lower than the potential of the + input terminal). Therefore, the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is higher than the threshold value, and the power transistor 30 is turned on to generate heat. When the object to be heated is heated by the power transistor 30 and the temperature of the object to be heated increases, the resistance value of the NTC thermistor 11 decreases, so that the potential of the first terminal of the resistor 43 increases. On the other hand, the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 hardly changes. Therefore, the potential difference between the non-inverting input terminal (+ input terminal) of the differential amplifier 20 and the first terminal of the resistor 43 is reduced. As a result, the output potential of the differential amplifier 20 is lowered, so that the base potential of the power transistor 30 is lowered and the current flowing through the collector terminal is reduced. As a result, the amount of heat released from the collector terminal is reduced.

  When the temperature of the object to be heated becomes higher than the set temperature (Y in S14), the power transistor 30 is turned off and heating of the object to be heated is stopped (S16). Specifically, when the temperature of the object to be heated becomes higher than the set temperature, the resistance value of the NTC thermistor 11 becomes lower than a predetermined value, so that the potential of the first terminal of the resistor 43 is non-inverted in the differential amplifier 20. It becomes higher than the potential of the input terminal (+ input terminal). Therefore, the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30, becomes lower than the threshold value, and the power transistor 30 is turned off to stop the heat generation. When the temperature of the object to be heated becomes lower than the set temperature (Y in S10), the power transistor 30 is turned on to heat the object to be heated again (S12).

  The processes of S10 to S16 are repeated according to the temperature of the object to be heated, and when the temperature of the object to be heated is stabilized at the set temperature (N in S14), the temperature control by the closed loop control is ended. Thus, the main control (first control) by the closed loop control is performed so that the temperature of the heated object becomes the set temperature by using the change in the resistance value of the NTC thermistor 11 according to the temperature change of the heated object. ) Is performed. The set temperature can be determined by adjusting the resistance value of the set temperature adjustment resistor 40. That is, as the resistance value of the set temperature adjustment resistor 40 is larger, the potential of the first terminal of the resistor 43 is higher, so the output potential of the differential amplifier 20 is lower. Therefore, the base potential of the power transistor 30 becomes lower and the current flowing through the collector terminal is smaller. Therefore, the larger the resistance value of the set temperature adjustment resistor 40, the smaller the heat radiation from the collector terminal, and the lower the set temperature of the object to be heated.

  However, since temperature control by closed loop control does not consider ambient temperature, a thermal gradient occurs between the NTC thermistor 11 and the object to be heated, and only closed loop control has a positive slope with respect to ambient temperature. A temperature control deviation will occur. Therefore, this temperature control deviation is corrected by temperature control by open loop control.

  Next, the temperature control operation by the open loop control will be described with reference to FIG. FIG. 3 is a flowchart of temperature control by open loop control. After the temperature control by the closed loop control is completed, when the ambient temperature rises (Y in S20), the resistance value of the NTC thermistors 12 and 13 decreases (S22), the power transistor 30 is turned off and the object to be heated is heated. Stop (S24). Specifically, when the ambient temperature increases, the resistance value of the NTC thermistor 12 decreases, so that the potential of the first terminal of the resistor 43 increases. In contrast, since the resistance value of the NTC thermistor 13 decreases, the combined resistance value of the resistor 42 and the NTC thermistor 13 decreases, and the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 decreases. As a result, the potential of the first terminal of the resistor 43 becomes higher than the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20, and the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is the threshold value. The power transistor 30 is turned off and heat generation is stopped.

  On the other hand, when the ambient temperature decreases (Y in S26), the resistance values of the NTC thermistors 12 and 13 increase (S28), and the amount of heat generated by the power transistor 30 is controlled according to the resistance values of the NTC thermistors 12 and 13. The article to be heated is heated (S30). Specifically, when the ambient temperature decreases, the resistance value of the NTC thermistor 12 increases, so that the potential of the first terminal of the resistor 43 decreases. In contrast, since the resistance value of the NTC thermistor 13 increases, the combined resistance value of the resistor 42 and the NTC thermistor 13 increases, and the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 increases. As a result, the potential of the first terminal of the resistor 43 becomes lower than the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20, and the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is the threshold value. The power transistor 30 is turned on to generate heat.

  The processes of S20 to S30 are repeated according to the ambient temperature, and when the ambient temperature is stabilized (N in S26), the temperature control by the open loop control is terminated. In this way, using the change in the resistance value of the NTC thermistors 12 and 13 according to the change in the ambient temperature, the heat generation of the power transistor 30 is stopped when the ambient temperature rises, and the NTC thermistor 12 when the ambient temperature falls. , Correction control (second control, third control) by open loop control is performed so that the power transistor 30 generates heat according to the resistance value of 13.

  In actual design, it is necessary to determine the resistance values and B constants of the NTC thermistors 11, 12, and 13 in consideration of the balance between the main control by the closed loop control and the correction control by the open loop control.

  For example, in order to limit the current flowing through the resistors 41 and 42, the resistors 41 and 42 are set to several kΩ to several tens of kΩ. In this case, in order to ensure the sensitivity of the open loop control by the NTC thermistor 13, for example, the resistance value of the NTC thermistor 13 is set to MΩ order at room temperature. Further, the sensitivity of this open loop control can be increased by increasing the B constant of the NTC thermistor 13.

  FIG. 4 shows an example of resistance-temperature characteristics of the NTC thermistor 13. In FIG. 4, the horizontal axis represents temperature, and the vertical axis represents the resistance value of the NTC thermistor 13. In the example of FIG. 4, the NTC thermistor 13 has a resistance value of 2 MΩ at 25 ° C. and a B constant of 4950 K, and has a negative temperature coefficient. Therefore, the higher the temperature, the smaller the resistance value. In addition, a nonlinear resistance-temperature characteristic is shown in which the resistance value change with respect to the temperature change increases as the temperature decreases.

  FIG. 5 is a diagram showing the temperature characteristics of the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20. In FIG. 5, the horizontal axis represents temperature, and the vertical axis represents the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20. G1 shows temperature characteristics when the resistance 41 is set to 10 kΩ, the resistance 42 is set to 22 kΩ, and the resistance value of the NTC thermistor 13 at normal temperature is set to ∞. In this case, since the combined resistance value of the resistor 42 and the NTC thermistor 13 is substantially constant at 22 kΩ regardless of the temperature, the potential at the non-inverting input terminal (+ input terminal) of the differential amplifier 20 is substantially constant. G2, G3, and G4 indicate temperature characteristics when the resistance values of the resistors 41 and 42 are set in three ways with respect to the NTC thermistor 13 having the resistance-temperature characteristics shown in FIG. In G2, the resistor 41 is set to 10 kΩ and the resistor 42 is set to 22 kΩ. In G, the resistor 41 is set to 5 kΩ and the resistor 42 is set to 11 kΩ. In G4, the resistor 41 is set to 1 kΩ and the resistor 42 is set to 2.2 kΩ. . In any of G2, G3, and G4, the resistance value of the NTC thermistor 13 is very large on the low temperature side lower than 25 ° C., so the combined resistance value of the resistor 42 and the NTC thermistor 13 is almost equal to the resistance value of the resistor 42. Equally, the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 hardly changes. That is, the open loop control by the NTC thermistor 13 hardly functions on the low temperature side. On the other hand, on the high temperature side higher than 25 ° C., the resistance value of the NTC thermistor 13 approaches the resistance value of the resistor 42 as the temperature increases, and the combined resistance value of the resistor 42 and the NTC thermistor 13 decreases. Therefore, the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 decreases as the temperature increases. That is, the open loop control by the NTC thermistor 13 functions effectively on the high temperature side. And the sensitivity of the open loop control by the NTC thermistor 13 becomes relatively higher as the resistance values of the resistors 41 and 42 are smaller.

  For example, in order to limit the current flowing through the NTC thermistor 11, the NTC thermistor 12, and the resistor 40, the resistance value of the NTC thermistor 11 is set to about 10 kΩ at room temperature (25 ° C.). The resistance value is set to about 100Ω to 150Ω (about 1/100 of the resistance value of the NTC thermistor 11) at room temperature. Although not shown, the NTC thermistor 11 and the NTC thermistor 12 exhibit the same resistance-temperature characteristics as in FIG. 4 except that the resistance values are different. Therefore, if set in this way, the open loop control by the NTC thermistor 12 hardly works on the high temperature side where the ambient temperature is higher than the normal temperature, but becomes effective on the low temperature side where the ambient temperature is lower than the normal temperature. That is, the temperature control deviation on the low temperature side generated by the closed loop control by the NTC thermistor 11 can be corrected by the open loop control by the NTC thermistor 12.

  Thus, according to the temperature control circuit of the first embodiment, the temperature control deviation on the low temperature side generated in the closed loop control (first control) is mainly controlled by the open loop control (second control) by the NTC thermistor 12. ), And the temperature control deviation on the high temperature side generated by the closed loop control (first control) can be corrected mainly by the open loop control (third control) by the NTC thermistor 13. In other words, the low-temperature side and high-temperature side corrections can be performed separately with the two systems of open-loop control. By adjusting the sensitivity of the two systems of open-loop control separately, the temperature control deviation can be adjusted over a wide temperature range. A small and highly accurate temperature control can be realized.

1-2. Second Embodiment [Configuration]
FIG. 6 is a circuit diagram of the temperature control circuit of the second embodiment. In FIG. 6, the same components as those in FIG. In the temperature control circuit 1 of the second embodiment, the connection position of the NTC thermistor 11 is different from that of the first embodiment. That is, in the second embodiment, the NTC thermistor 11 has a first terminal connected to the second terminal of the resistor 41 and the non-inverting input terminal (+ input terminal) of the differential amplifier 20, and a second terminal connected to the resistor 42. The first terminal and the first terminal of the NTC thermistor 13 are connected. The first terminal of the NTC thermistor 12 is connected to the external terminal 2 and the first terminal of the resistor 41. The other connection relationships in FIG. 6 are the same as those in FIG.

  Also in the second embodiment, the NTC thermistor 11 is disposed close to the object to be heated or the power transistor 30 and functions as a temperature sensor for closed loop control. Further, the NTC thermistor 12 and the NTC thermistor 13 are arranged at positions away from the object to be heated and the power transistor 30 and function as a temperature sensor for open loop control. The NTC thermistor 12 and the set temperature adjustment resistor 40 are connected in series between the reference potential Vref and the ground potential GND, and the potential of the first terminal of the resistor 43 is the NTC thermistor 12 and the set temperature adjustment resistor 40. It depends on the resistance ratio. Further, a resistor 41, an NTC thermistor 11, a parallel circuit of the resistor 42 and the NTC thermistor 13 are connected in series between the reference potential Vref and the ground potential GND, and the non-inverting input terminal (+ input) of the differential amplifier 20 The potential of the terminal is determined according to the resistance ratio of the resistor 41, the NTC thermistor 11, the combined resistor of the resistor 42 and the NTC thermistor 13.

[Temperature control operation]
Next, the operation of the temperature control circuit of the second embodiment will be described.

  First, temperature control by closed loop control will be described. In addition, since the flowchart of the temperature control by the closed loop control of 2nd Embodiment is the same as that of FIG. 2, illustration is abbreviate | omitted. Also in this embodiment, when the temperature of the object to be heated matches the set temperature, the resistance value of the NTC thermistor 11 becomes a predetermined value, and the potential of the first terminal of the resistor 43 and the non-inverting input terminal ( The potentials of the + input terminal) are matched. Therefore, when the temperature of the object to be heated is lower than the set temperature, the resistance value of the NTC thermistor 11 is higher than a predetermined value, so that the potential of the first terminal of the resistor 43 is the non-inverting input terminal ( It is lower than the potential of the (+ input terminal). Therefore, the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is higher than the threshold value, and the power transistor 30 is turned on to generate heat. When the object to be heated is heated by the power transistor 30 and the temperature of the object to be heated increases, the resistance value of the NTC thermistor 11 decreases, so that the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 decreases. . On the other hand, the potential of the first terminal of the resistor 43 hardly changes. Therefore, the potential difference between the non-inverting input terminal (+ input terminal) of the differential amplifier 20 and the first terminal of the resistor 43 is reduced. As a result, the output potential of the differential amplifier 20 is lowered, so that the base potential of the power transistor 30 is lowered and the current flowing through the collector terminal is reduced. As a result, the amount of heat released from the collector terminal is reduced.

  When the temperature of the object to be heated becomes higher than the set temperature, the resistance value of the NTC thermistor 11 becomes lower than a predetermined value, so that the potential of the first terminal of the resistor 43 is the non-inverting input terminal (+ input) of the differential amplifier 20. Terminal) potential. Therefore, the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30, becomes lower than the threshold value, and the power transistor 30 is turned off to stop the heat generation. When the temperature of the object to be heated becomes lower than the set temperature, the power transistor 30 is turned on to heat the object to be heated again.

  Thus, the main control (first control) by the closed loop control is performed so that the temperature of the heated object becomes the set temperature by using the change in the resistance value of the NTC thermistor 11 according to the temperature change of the heated object. ) Is performed. As in the first embodiment, the set temperature can be determined by adjusting the resistance value of the set temperature adjustment resistor 40.

  Next, a temperature control operation by open loop control will be described. In addition, since the flowchart of the temperature control by the open loop control of 2nd Embodiment is the same as that of FIG. 3, illustration is abbreviate | omitted. When the ambient temperature increases, the resistance value of the NTC thermistor 13 decreases, so that the combined resistance value of the resistor 42 and the NTC thermistor 13 decreases, and the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 decreases. On the other hand, since the resistance value of the NTC thermistor 12 decreases, the potential at the first terminal of the resistor 43 increases. As a result, the potential of the first terminal of the resistor 43 becomes higher than the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20, and the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is the threshold value. The power transistor 30 is turned off and heat generation is stopped.

  On the other hand, when the ambient temperature decreases, the resistance value of the NTC thermistor 13 increases, so the combined resistance value of the resistor 42 and the NTC thermistor 13 increases, and the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20 increases. To do. In contrast, since the resistance value of the NTC thermistor 12 increases, the potential of the first terminal of the resistor 43 decreases. As a result, the potential of the first terminal of the resistor 43 becomes lower than the potential of the non-inverting input terminal (+ input terminal) of the differential amplifier 20, and the output potential of the differential amplifier 20, that is, the base potential of the power transistor 30 is the threshold value. The power transistor 30 is turned on to generate heat.

  In this way, using the change in the resistance value of the NTC thermistors 12 and 13 according to the change in the ambient temperature, the heat generation of the power transistor 30 is stopped when the ambient temperature rises, and the NTC thermistor 12 when the ambient temperature falls. , Correction control (second control, third control) by open loop control is performed so that the power transistor 30 generates heat according to the resistance value of 13.

  As described in the first embodiment, in actual design, each resistance of the NTC thermistors 11, 12, and 13 is considered in consideration of the balance between the main control by the closed loop control and the correction control by the open loop control. The value needs to be determined. Also in the second embodiment, the NTC thermistor 11, 12, and the resistance value of the resistor 41, 42 are appropriately set so that the NTC thermistor 11 performs closed loop control (first control). The temperature control deviation generated on the low temperature side is corrected mainly by the open loop control (second control) by the NTC thermistor 12, and the temperature control deviation generated on the high temperature side by the closed loop control (first control) is mainly corrected. Correction can be made by open loop control (third control) by the NTC thermistor 13. In other words, the low-temperature side and high-temperature side corrections can be performed separately by the two systems of open-loop control. By adjusting the sensitivity of these two systems of open-loop control separately, the temperature control deviation can be increased over a wide temperature range. A small and highly accurate temperature control can be realized.

2. Thermostatic Bath Type Piezoelectric Oscillator FIGS. 7A and 7B are diagrams schematically showing the structure of the constant temperature bath piezoelectric oscillator of the present embodiment. FIG. 7A is a top view of a printed circuit board that is a component of the thermostatic chamber type piezoelectric oscillator of the present embodiment. FIG. 7B is a side view of the thermostatic chamber type piezoelectric oscillator of the present embodiment. In FIG. 7A and FIG. 7B, the same numbers are assigned to the same elements. Note that the thermostatic chamber type piezoelectric oscillator of the present embodiment may have a configuration in which some of the components (each part) in FIGS. 7A and 7B are omitted or other components are added.

  In the thermostatic chamber type piezoelectric oscillator 100 of this embodiment, an oscillation element 170, a temperature sensitive element 150, and a temperature control element 130 are arranged on a printed board 110. In addition, the round part has shown the support material of a board | substrate or components. The support material not only supports the components and the like, but may be electrically connected through wiring, for example. Below the printed circuit board 110, a piezoelectric vibrator housing portion 120 in which a piezoelectric vibrator is housed, a power transistor 160, and a temperature sensitive element 140 are fixed by a support material. The thermostat-type piezoelectric oscillator 1 is sealed with a cover 180.

  The oscillation element 170 includes an oscillation circuit (such as a Colpitts oscillation circuit) for causing the piezoelectric vibrator to oscillate. The power transistor 160 is used as a heater for maintaining the inside of the thermostatic chamber at a constant temperature, and corresponds to the power transistor 30 in FIGS. 1 and 6.

  The temperature sensitive element 140 is a thermistor for closed loop control, and corresponds to the NTC thermistor 11 of FIGS. The temperature sensing element 140 is disposed close to the piezoelectric vibrator housing part 120 and detects the temperature of the piezoelectric vibrator housing part 120 (an example of an object to be heated). Note that the temperature sensitive element 140 may be disposed close to the power transistor 160 to detect the temperature of the power transistor 160.

  The temperature sensitive elements 150 and 152 are thermistors for open loop control, and correspond to the NTC thermistors 12 and 13 in FIGS. 1 and 6, respectively. The temperature sensitive elements 150 and 152 detect the temperature (ambient temperature) at a position away from the power transistor 160.

  The temperature control element 130 controls the amount of heat generated by the power transistor 160 based on the detection results of the temperature sensitive elements 140, 150, and 152. The temperature control element 130 includes components excluding the NTC thermistors 11, 12, and 13 and the power transistor 30 among the components of the temperature control circuit of FIGS. 1 and 6.

  It should be noted that a thermostatic crystal oscillator (OCXO) can be configured by using a crystal resonator as the one stored in the piezoelectric resonator storage portion 120.

  FIG. 8 is a diagram illustrating an example of temperature control characteristics of the OCXO of the present embodiment including the temperature control circuit of FIG. As a comparative example, FIGS. 9A and 9B show an example of temperature control characteristics of an OCXO including a temperature control circuit in which the temperature sensitive element 152 (NTC thermistor 13) is deleted from the temperature control circuit of FIG. . FIG. 9A shows an example in which the sensitivity of the open loop control by the temperature sensing element 150 (NTC thermistor 12) is relatively high, and FIG. 9B shows the temperature sensing element 150 (NTC thermistor 12). ) Is an example in which the sensitivity of the open loop control is relatively low. 8, 9A, and 9B, the horizontal axis represents elapsed time, the left vertical axis represents OCXO temperature control deviation, and the right vertical axis represents ambient temperature.

  T1 indicates the transition of the temperature around the OCXO. That is, the temperature is set to 25 ° C., and after about 70 minutes have elapsed from the reference time, the temperature is set to −40 ° C. and held for about 120 minutes, and gradually increases from −40 ° C. to 85 ° C. for about 120 to 180 minutes. The setting of 85 ° C. is maintained until about 210 minutes after the change is made, and after about 210 minutes, the temperature is set to 25 ° C. and maintained for 240 minutes. T2, T3, and T4 show an example of the evaluation result of the OCXO temperature control deviation when the temperature is changed according to the temperature profile of T1.

  In the absence of the temperature sensing element 152 (NTC thermistor 13), if the sensitivity of the open loop control by the temperature sensing element 150 (NTC thermistor 12) is high, as shown at T3 in FIG. ), The temperature control deviation of OCXO is small due to appropriate temperature correction on the high temperature side, but on the low temperature side lower than room temperature (25 ° C.), the rapid resistance value of the temperature sensing element 150 (NTC thermistor 12). Due to the change, excessive temperature correction is applied and the temperature control deviation of the OCXO becomes large. Therefore, there is a temperature control deviation of about 3 ° C. from −40 ° C. to 85 ° C. Also, if the sensitivity of the open loop control by the temperature sensing element 150 (NTC thermistor 12) is low, an appropriate temperature correction is performed on the low temperature side as shown by T4 in FIG. However, since the change in resistance value of the temperature sensing element 150 (NTC thermistor 12) is too small on the high temperature side, the temperature correction amount is insufficient, and the temperature control deviation of the OCXO increases due to being pulled to the ambient temperature. Therefore, there is a temperature control deviation of about 1 ° C. at −40 ° C. to 85 ° C. On the other hand, in the OCXO using the temperature control circuit of the present embodiment, as shown at T2 in FIG. 8, the open loop control mainly by the temperature sensing element 150 (NTC thermistor 12) functions appropriately on the low temperature side. On the high temperature side, open-loop control mainly by the temperature sensing element 152 (NTC thermistor 13) functions appropriately. Therefore, appropriate temperature correction is performed on both the low temperature side and the high temperature side, and the temperature control deviation of the OCXO is small. Therefore, the temperature control deviation at −40 ° C. to 85 ° C. is about 0.2 ° C. As described above, the high temperature side and low temperature side corrections are separately performed by two systems of open loop control by the temperature sensing element 150 and the temperature sensing element 152, thereby realizing a high temperature type piezoelectric oscillator having superior temperature characteristics than the conventional one. be able to.

3. Electronic Device FIG. 10 is a functional block diagram illustrating a configuration example of the electronic device of the present embodiment. The electronic device 200 of the present embodiment includes a signal generation unit 300, a processing unit 400, an operation unit 410, a display unit 420, a ROM (Read Only Memory) 430, a RAM (Random Access Memory) 440, and a communication unit 450. ing. Note that the electronic device of this embodiment may have a configuration in which some of the components (each unit) in FIG. 10 are omitted or other components are added.

  The signal generation unit 300 includes a temperature control circuit 310, generates a given signal with a small temperature control deviation, and supplies the generated signal to the processing unit 400. As an example, if the signal generation unit 300 is the thermostatic chamber type piezoelectric oscillator of this embodiment, a clock signal with a small temperature control deviation and a high frequency stability can be supplied to the processing unit 400. As another example, a simple piezoelectric oscillator without a thermostatic chamber such as a crystal oscillator is heated by a heater and controlled to a constant temperature by a temperature control circuit 310, so that frequency stability is higher than that of a simple piezoelectric oscillator with a simple configuration. The signal generator 300 that generates a high clock signal can also be configured.

  The processing unit 400 performs various calculation processes and control processes according to programs stored in the ROM 430. Specifically, the processing unit 400 performs various calculation processes based on the signal generated by the signal generation unit 300 and the like. In addition, the processing unit 400 is a communication unit for performing various types of processing according to an operation signal from the operation unit 410, processing for transmitting a display signal for displaying various types of information on the display unit 420, and data communication with the outside. The process etc. which control 450 are performed.

  The operation unit 410 is an input device configured by operation keys, button switches, and the like, and outputs an operation signal corresponding to an operation by the user to the processing unit 400.

  The display unit 420 is a display device configured by an LCD (Liquid Crystal Display) or the like, and displays various types of information based on a display signal input from the processing unit 400.

  The ROM 430 stores programs for the processing unit 400 to perform various calculation processes and control processes, various programs and data for realizing predetermined functions, and the like.

  The RAM 440 is used as a work area of the processing unit 400, and temporarily stores programs and data read from the ROM 430, data input from the operation unit 410, calculation results executed by the processing unit 400 according to various programs, and the like. .

  The communication unit 450 performs various controls for establishing data communication between the processing unit 400 and the external device.

  By incorporating the temperature control circuit of the present embodiment into the electronic device 200 as the temperature control circuit 310, highly accurate processing can be realized over a wide temperature range.

  As such an electronic device 200, various electronic devices that require temperature control are conceivable, and examples thereof include communication devices and measuring instruments that use OCXO as a clock source.

  In addition, this invention is not limited to this embodiment, A various deformation | transformation implementation is possible within the range of the summary of this invention.

  For example, in this embodiment, a circuit example using an NPN type power transistor as a heating element has been described. However, a PNP bipolar transistor is used as a heating element, and NTC thermistors 11, 12, and 13 are connected to a PNP type. The present invention can be applied to a circuit arranged according to the operation of the bipolar transistor. It is also applicable to circuits using MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and circuits using heating elements that use Joule heat generated by passing current through resistors instead of power transistors. be able to.

  In the present embodiment, for example, a circuit example using an NTC thermistor having a negative temperature coefficient and exhibiting non-linear resistance-temperature characteristics has been described as a temperature sensing element. However, a PTC (Positive Temperature Coefficient) circuit is described. The present invention can also be applied to a circuit using a temperature sensing element having a positive temperature coefficient such as Mr. or a temperature sensing element showing a linear resistance-temperature characteristic such as a platinum resistance.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 1 Temperature control circuit 2, 3, 4 External terminal 11, 12, 13 NTC thermistor, 20 Differential amplifier, 30 Power transistor, 40, 41, 42, 43, 44, 45, 46 Resistance, 50, 51, 52, 53 condenser, 100 thermostatic chamber type piezoelectric oscillator, 110 printed circuit board, 120 piezoelectric vibrator housing, 130 temperature control element, 140 temperature sensing element, 150, 152 temperature sensing element, 160 power transistor, 170 oscillation element, 180 cover, 200 electronic device, 300 signal generation unit, 310 temperature control circuit, 400 processing unit, 410 operation unit, 420 display unit, 430 ROM, 440 RAM, 450 communication unit

Claims (9)

A temperature control circuit for controlling the temperature of an object to be heated,
A heating element for heating the object to be heated;
A first thermosensitive element installed close to a position where the temperature of the object to be heated or the heating element can be measured;
A second temperature sensing element and a third temperature sensing element, which are installed apart from each other at a position where the temperature around the object to be heated and the heating element can be measured;
A first control for controlling the amount of heat generated by the heating element based on the detection value of the first temperature sensing element, and a first control for controlling the amount of heat generation of the heating element based on the detection value of the second temperature sensing element. And an amplifier for performing a third control for controlling a heat generation amount of the heating element based on a control of 2 and a detection value of the third temperature sensitive element,
The amplifier is
The lower the temperature detected by the second temperature sensitive element, the larger the ratio of the second control, and the higher the temperature detected by the third temperature sensitive element, the larger the ratio of the third control. Temperature control circuit. In claim 1,
The amplifier is
A differential amplifier in which one input voltage changes in accordance with a change in the detection value of the second temperature sensing element and the other input voltage changes in accordance with a change in the detection value of the third temperature sensing element. There is a temperature control circuit. In claim 2,
A resistor connected in parallel with the third temperature sensing element;
A temperature control circuit, wherein the other input voltage of the differential amplifier changes according to a change in a combined resistance value of the third temperature sensing element and the resistor. In claim 3,
The first temperature sensing element is connected in series with the second temperature sensing element,
A temperature control circuit in which the one input voltage of the differential amplifier changes in accordance with a change in a combined resistance value of the first temperature sensing element and the second temperature sensing element. In claim 3,
The first temperature sensing element is connected in series with a parallel circuit of the third temperature sensing element and the resistor,
A temperature control circuit, wherein the other input voltage of the differential amplifier changes according to a change in a combined resistance value of the parallel circuit and the first temperature sensitive element. In any one of Claims 1 thru | or 5,
The second temperature sensing element and the third temperature sensing element are:
A temperature control circuit, which is a thermistor having a negative temperature coefficient and exhibiting non-linear resistance-temperature characteristics. The temperature control circuit according to any one of claims 1 to 6,
A thermostatic chamber type piezoelectric oscillator including a piezoelectric vibrator.   An electronic device comprising the temperature control circuit according to claim 1. A temperature control method for controlling the temperature of an object to be heated,
A heating step of heating the object to be heated using a heating element;
A first control for controlling a heat generation amount of the heating element based on a detection value of a first temperature sensing element installed close to a position where the temperature of the object to be heated or the heating element can be measured; Second control for controlling the amount of heat generated by the heat generating element based on a detection value of a second temperature sensitive element that is disposed at a position where the temperature around the heated object and the heat generating element can be measured, and the object to be heated And a control step of performing a third control for controlling the amount of heat generated by the heat generating element based on a detection value of a third temperature sensing element installed at a position away from the object and the heat generating element,
In the control step,
The lower the temperature detected by the second temperature sensitive element, the larger the ratio of the second control, and the higher the temperature detected by the third temperature sensitive element, the larger the ratio of the third control. Temperature control method.