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JP2011216822A - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP2011216822A
JP2011216822A JP2010086094A JP2010086094A JP2011216822A JP 2011216822 A JP2011216822 A JP 2011216822A JP 2010086094 A JP2010086094 A JP 2010086094A JP 2010086094 A JP2010086094 A JP 2010086094A JP 2011216822 A JP2011216822 A JP 2011216822A
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JP
Japan
Prior art keywords
semiconductor element
extraction electrode
laminated
power semiconductor
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010086094A
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English (en)
Other versions
JP5473733B2 (ja
Inventor
Katsunori Azuma
克典 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2010086094A priority Critical patent/JP5473733B2/ja
Priority to EP11160367.6A priority patent/EP2372763A3/en
Priority to US13/078,135 priority patent/US8294258B2/en
Publication of JP2011216822A publication Critical patent/JP2011216822A/ja
Application granted granted Critical
Publication of JP5473733B2 publication Critical patent/JP5473733B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

【課題】電力変換装置に好適なパワー半導体モジュールを提供する。
【解決手段】表面と裏面に接続用の電極面を有する半導体素子の裏面を、第１の配線導体に対し、ハンダ２０を介して接続し、前記半導体素子の表面には、少なくとも２種類の金属を積層した積層構造をもつ積層導体の一方の金属面を直接、金属間接続し、前記積層導体の他方の金属面には、第２の配線導体をハンダ２１を介して接続したパワー半導体モジュールにおいて、前記積層導体は、複数のアーチ状の凸部と該アーチ状の凸部を接続する直線部を備え、該直線部を前記半導体素子の表面と接続し、前記凸部を前記第２の配線導体と接続する。これにより、半導体素子の両面を冷却する放熱構造で、しかも内部への応力を低減することのできるパワー半導体モジュールを得ることができる。
【選択図】図１

Description

本発明は、パワー半導体モジュールに係り、特に直流電力を交流電力に変換し、あるいは交流電力を直流電力に変換する電力変換装置に好適なパワー半導体モジュール関する。
電力変換装置は、直流電源から供給された直流電力を回転電機などの交流負荷に供給するため交流電力に変換する機能、あるいは回転電機により発電された交流電力を直流電源に供給するため直流電力に変換する機能を備えている。
このような変換機能を果すため、電力変換装置はスイッチング機能を持つ半導体素子を有するインバータを備え、前記半導体素子を繰り返し導通、遮断させることにより、直流電力から交流電力へあるいは交流電力から直流電力への電力変換を行う。
前記スイッチング用の半導体素子は、スイッチング時及び通電時に発熱する。このため、半導体素子は、高熱伝導部材の上に搭載した放熱構造をとる。
特に電力変換装置の小型、低コスト化のためには、高放熱構造にして、半導体素子の面積を小型化することが望ましい。
特許文献１には、半導体素子の両面をハンダを介して高熱伝導部材に接続することにより、半導体素子の両面から放熱する構造が開示されている。
また、特許文献２には、チップ上に円柱状の金属をハンダ接続し、さらに該金属はんだの上面に金属板をハンダ接続し、半導体素子の両面から放熱する構造が開示されている。
また、特許文献３には、Ｓｉチップを接合部材と放熱板とで挟み込んだ構成にすることにより、熱膨張係数差に基づく熱応力の発生を抑制することが開示されている。
しかしながら、パワー半導体モジュール内部への応力の低減が十分ではなく、信頼性の確保が十分ではなかった。
特開２００８−２５９２６７号公報 ＥＰ１４６７６０７ 特開２０００−３４９２０７号公報
本発明が解決しようとする課題は、パワー半導体モジュールの信頼性を向上させることである。
本発明は上記課題を解決するため、次のような手段を採用した。
表面と裏面に接続用の電極面を有する半導体素子の裏面を、第１の取り出し電極に対し、ハンダを介して接続し、前記半導体素子の表面には、少なくとも２種類の金属を積層した積層構造をもつ積層導体の一方の金属面を直接、金属間接続し、前記積層導体の他方の金属面には、第２の取り出し電極をハンダを介して接続したパワー半導体モジュールにおいて、前記積層導体は、複数のアーチ状の凸部と該アーチ状の凸部を接続する直線部を備え、該直線部を前記半導体素子の表面と接続し、前記凸部を前記第２の取り出し電極と接続した。
本発明により、パワー半導体モジュールの信頼性を向上させることができる。
実施形態に係る半導体モジュールを説明する図である。 半導体モジュールの接続分解図である。 両面冷却モジュールの第１の実施形態を示す図である。 両面冷却モジュールの第２の実施形態を示す図である。 両面冷却モジュールの第３の実施形態を示す図である。 両面冷却モジュールの第４の実施形態を示す図である。 第４の実施形態に係る半導体モジュールの分解図である。 両面冷却モジュールの第５の実施形態を示す図である。 両面冷却モジュールを用いたインバータの実装例を示す図である。
本実施形態を説明する前に、本実施形態の原理について以下に説明する。
従来の半導体素子の両面を冷却する構造は、半導体素子の両面に高熱伝導率の金属をハンダ付けする。このため、半導体素子の温度上昇にともない、半導体素子とハンダ付けした高熱伝導率の金属との線膨張係数の違いにより、ハンダ部に応力が集中し、長期使用すると亀裂などが発生する。このため、前記金属の周りを樹脂で固めて金属部の膨張を防いだり、金属にセラミックをロウ付けして、見かけ上の熱膨張係数を小さくして、ハンダへの応力を小さくし、寿命劣化を防いでいた。
しかし、両面を冷却する構造は、半導体素子の両側から金属で挟み込む構造のため、組立時、あるいはインバータ実装時に、半導体素子およびハンダに直接応力が加わり、これらに亀裂が生じる可能性がある。
また、半導体素子の製造に際しては、両面をハンダ付けするためのメッキ処理が必要になり、従来の裏面だけの片面処理のプロセスに比して、処理が複雑になる。
半導体素子の表面には、スイッチング制御用の電極パッド、電流センサあるいは温度センサ用の電極パッドなどの外、半導体素子の外周に素子耐圧を確保する領域があり、これらの領域をショートや汚染を防ぐ必要がある。このため、両面をはんだ付けするためにメッキ処理することは、メッキのコストが増加するだけでなく、信頼性、歩留まりの低下の原因となり、コストの増加を招く。また、メッキ洗浄液の処理など環境への負荷が大きくなる。
本発明は、これらの問題点に鑑みてなされたもので、片面メッキ処理プロセスの半導体素子を用い、半導体素子の両面を冷却する放熱構造で、しかも内部への応力を低減することのできるパワー半導体モジュールを提供するものである。
本実施形態は以下の構成を備えるため、パワー半導体モジュールを構成する半導体素子の両面を冷却でき、しかも内部への応力を低減することのできる放熱構造を、片面メッキ処理プロセスの半導体素子を用いて実現することができる。
以下、実施形態を添付図面を参照しながら説明する。
図１は、本実施形態に係る半導体モジュールを説明する図である。また、図２は、前記半導体モジュールの接続分解図である。
半導体素子４０は、その下面電極が外部取り出し電極６０にハンダ２０を介して接続され、また、半導体素子４０の上面の制御電極は、制御用のワイヤ７５を介して外部取り出し電極（制御端子）７０へ接続される。
半導体素子の上面電極には、２種類の金属層をもつクラッド材３０が、超音波により接続される。半導体素子４０の上面電極は、大電流用の素子ではアルミで構成される。クラッド材３０は、アルミ３３と銅３２の２層からなり、アルミ３３側を半導体素子の上面側にすることにより、超音波接合が可能になる。この超音波接合をした後、外部取り出し電極１０とクラッド材３０の銅３２側をハンダ２１により接合する。さらに、モールド樹脂８０により外部を固める。これにより、半導体素子４０の上面と下面が冷却可能な両面冷却モジュール１００が形成される。クラッド材３０は平板状の薄板であり、厚さ０．２ｍｍ以下とすることにより、従来の超音波接続のように、超音波周波数が接合界面に伝わりやすくなり、確実に半導体素子４０の上面と接続することができる。
ここで、クラッド材３０を、アーチ部３５と直線部３６で構成することにより、半導体素子４０の上面を、超音波で接続する直線部３６と、ハンダ２１で接続するアーチ部に分けることができる。このアーチ部により、半導体素子４０の上面から加わる応力を緩和することができる。
クラッド材３０の外部取り出し電極１０側に接続する部分をアーチ状にすることにより、電極１０の接続時に、ハンダ２０の厚みのばらつきで半導体素子４０が傾き、高さにばらつきが生じた場合においても、アーチ部が変形してばらつきを吸収することがでる。これにより、クラッド材４０と電極１０とを確実にハンダ接続することができる。
このように、一旦、半導体素子４０の表面とクラッド材３０の直線部分３６とを超音波接続することにより、半導体素子の表面に直接ハンダで接続する従来の両面冷却構造に比べて、確実に半導体素子４０の両面を冷却する接続を作ることができる。また、半導体素子４０は、従来のプロセスのままでよい。すなわち、表面にハンダ用のメッキ処理をしなくてもよくなり、コストアップと歩留まりの低下を防ぐことができる。
制御端子７０は、半導体素子４０のスイッチング制御のため、外部からオン、オフ用の電圧を加える端子であり、半導体素子４０とアルミワイヤなどの制御端子用ワイヤ７５で接続する。この図では、端子７０をわかり易くするため、取り出し電極１０、６０の間に描いたが、電極６０と同一平面上に形成し、図２に示す電極１０をハンダ２１で接続する前の、半導体素子４０の上面が見えるときに配線をする。
図３は、両面冷却モジュール１００の第１の実施形態を示す図である。両面冷却モジュール１００の上下面を絶縁板９０を介して冷却フィン９５で挟みこみ、固定金具９７により固定する。ここで固定金具９７は、両面冷却モジュール１００を均一に加圧できるように複数個を配置する。
絶縁板９０は、窒化アルミ、窒化ケイ素、アルミナなどのセラミック、あるいは高熱伝導率の樹脂で構成する。セラミックで構成する場合は冷却フィン９５にロウ付けしてもよい。また、冷却フィンと外部取り出し電極の両方にロウ付けしたものを用いてもよい。樹脂で構成する場合は、冷却フィン９５に予め接着したものを用いてもよい。
図４は、両面冷却モジュール１００の第２の実施形態を示す図であるｃ。図に示すように、絶縁板９０上面に取り出し電極１０、６０を形成し、下面に冷却用金属板９６をロウ付けした絶縁金属基板９８の上面に、半導体素子４０をハンダ２０で接続する。クラッド材３０のアルミ３３側を半導体素子４０の電極１０に超音波接続する。さらに、クラッド材３０の銅３２側に冷却用金属板１５を、ハンダ２１で接続する。これにより、半導体素子の上面の電流経路と冷却経路を分離することができる。これにより、半導体素子４０の上面の冷却経路自体に電流が流れることによる発熱を低減できる。また、従来の半導体モジュールに近い構造で、上面冷却構造が実現できる。なお、この図では制御端子７０は省略している。また、上面の冷却用金属板１５は、絶縁金属基板９８に代えることができる。
図５は、両面冷却モジュール１００の第３の実施形態を示す図である。絶縁基板９０の上面に電極１０、６０を、下面にフィンの付いた冷却用金属板９６Ｆをロウ付けしたフィン付き絶縁基板９６Ｆを用い、半導体素子４０を電極２０にハンダ２０で接続する。クラッド材３０のアルミ３３側を、半導体素子４０と電極１０に超音波接続する。さらに、クラッド材３０の銅３２側に冷却用金属板１５を、ハンダ２１で接続する。なお、上面の冷却用金属板１５は、フィン付き絶縁金属基板９８Ｆに代えることができる。
図６は、両面冷却モジュール１００の第４の実施形態を説明する図である。両面にフィン付き絶縁基板９６Ｆを用い、スイッチング回路を２つ搭載した例である。外部端子として、高電位側に接続する端子６０Ｐ、低電位側に接続する端子６０Ｎ、スイッチングにより高電位または低電位を出力する端子６０Ｕがある。また、高電位側および低電位側のスイッチング回路を駆動するため、高電位側の制御端子１０Ｕ、低電位側の出力端子１０Ｄがある。
図７は、第４の実施形態に係る半導体モジュールの分解図を示す。フィン９６Ｆ、絶縁基板９０、電極６０Ｐ、６０Ｎ、６０Ｕ、制御配線１０Ｕ、１０Ｄをろう付けして構成されたフィン付き絶縁基板上に、ＩＧＢＴチップ４０Ｉ、ダイオードチップ４０Ｄをハンダ２０で接続する。これにより、チップ裏面を電極に接続することができる。チップ上面は、クラッド材３０を介して取り出し電極と接続され、ハンダ２１を介してフィン付き絶縁基板９８と接続される。これにより、両面冷却モジュールが構成される。なお、ここではモールド材は図示していない。
図８は、両面冷却モジュール１００の第５の実施形態を示す図である。半導体素子４０をロウ付けした冷却用金属板９６を両面に用い、半導体素子をチップ両面から冷却する構造で、スイッチング回路を２つ搭載した例である。外部端子として、高電位側に接続する端子６０Ｐ、低電位側に接続する端子６０Ｎ、スイッチングにより高電位、低電位を出力する端子６０Ｕを備える。また、高電位、低電位側をスイッチングするため、高電位側の制御端子１０Ｕ、低電位側の出力端子１０Ｄを備える。
図９は、両面冷却モジュール１００を用いたインバータの実装例を示す図である。スイッチング時に電流を供給する平滑コンデンサ１１０の上に、冷却フィンを内蔵した板状の配管９５を設置する。接続端子１１２には、両面冷却モジュール１００の取り出し電極を接続して固定する。
板状の配管９５は固定金具９７を用いて両面冷却モジュール１００を挟み込むように固定する。このとき、配管とモジュールの間には密着性が良く、熱伝達率のよいグリスを挟むとよい。また、制御基板１２０と両面冷却モジュール１００間を制御端子コネクタ１２４で接続する。制御基板１２０上には、スイッチング制御ＩＣ１２２を搭載し、両面冷却モジュール内の半導体素子４０のゲートを駆動する。
両面冷却モジュール１００は、スイッチング用の半導体素子を直列に２つ接続した回路をとり、直列接続した部分から電圧を出力することで、直列回路の両端電圧の何れか一方を出力できる構成をとる。このため、接続した部分から電位を取り出す配線６５をもつ。この配線６５は、モータへ接続するケーブルに接続する。制御基板１２０には、モータへの電流をモニタする電流センサ１２６が搭載され、外部のマイコン基板（図示せず）には、コネクタ１２８を通してモニタ結果を伝える。
平滑コンデンサモジュール１１０は、電源である電池からのケーブルを接続する端子１１４を備える。平滑コンデンサモジュール内部は、平滑用のコンデンサ素子の他、フィルタ用のリアクトルおよび放電用抵抗が内蔵される。
以上説明したように、本実施形態の半導体モジュールによれば、従来のプロセスで形成された半導体素子
（片面メッキ処理プロセスの半導体素子）を用い、半導体素子の両面を冷却する放熱構造で、しかも内部へ
の応力を低減することのできるパワー半導体モジュールを得ることができる。このため、小型・低コストの
半導体素子を用いた電力変換装置を提供することができる。また、パワー半導体モジュールのインダクタンスを低減することができ、また体積の増大を抑えることができる。
１０、６０、６５：外部取り出し電極
２０、２１、２２：ハンダ
３０：クラッド材
３２：銅材
３３：アルミニウム材
３５：クラッド材アーチ部（ハンダ接合部）
３６：クラッド材直線部（超音波接合部）
４０：スイッチング用半導体素子
７０：制御端子
７５：制御端子用ワイヤ
８０：モールド樹脂
９０：絶縁板
９５：冷却フィン
１５、９６、９６Ｆ：冷却用金属板
９７：固定金具
９８：絶縁金属基板
９８Ｆ：フィン付き絶縁基板
１００：両面冷却モジュール
１１０：平滑コンデンサモジュール
１１２：接続端子
１１４：直流入力端子
１２０：スイッチング制御基板
１２２：スイッチング制御ＩＣ
１２４：制御端子コネクタ
１２８：外部コネクタ

Claims (8)

  1. 表面と裏面に接続用の電極面を有する半導体素子の裏面を、第１の取り出し電極に対し、ハンダを介して接続し、
    前記半導体素子の表面には、少なくとも２種類の金属を積層した積層構造をもつ積層導体の一方の金属面を直接、金属間接続し、
    前記積層導体の他方の金属面には、第２の取り出し電極をハンダを介して接続したパワー半導体モジュールにおいて、
    前記積層導体は、複数のアーチ状の凸部と該アーチ状の凸部を接続する直線部を備え、該直線部を前記半導体素子の表面と接続し、前記凸部を前記第２の取り出し電極と接続したことを特徴とするパワー半導体モジュール。
  2. 請求項１記載のパワー半導体モジュールにおいて、
    前記積層導体は、銅およびアルミニウムを積層した導体であり、前記積層導体のアルミニウム側面を前記半導体素子の表面に直接、金属接合し、銅側面を第２の取り出し電極にハンダを介して接合したことを特徴とするパワー半導体モジュール。
  3. 請求項１記載のパワー半導体モジュールにおいて、
    前記半導体素子の表面と前記積層導体の一方の金属面とは超音波接続したことを特徴とするパワー半導体モジュール。
  4. 請求項１記載のパワー半導体モジュールにおいて、
    前記第１の取り出し電極の端部は外部接続用の第１の端子を構成し、前記第２の取り出し電極の端部は外部接続用の第２の端子を構成することを特徴とするパワー半導体モジュール。
  5. 請求項１記載のパワー半導体ジュールにおいて、
    パワー半導体モジュールを冷却する第１の冷却装置を備え、
    前記第１の取り出し電極および積層導体は、平板状の絶縁板を介して前記第１の冷却装置の受熱面に配置し、前記第２の取り出し電極は第２の冷却装置を備えたことを特徴とするパワー半導体モジュール。
  6. 請求項５記載のパワー半導体モジュールにおいて、
    前記第１および第２の冷却装置は冷却用のフィンを形成した金属導体であることを特徴とするパワー半導体モジュール。
  7. 表面と裏面に接続用の電極面を有する半導体素子の裏面を、第１の取り出し電極に対し、ハンダを介して接続し、
    前記半導体素子の表面には、少なくとも２種類の金属を積層した積層構造をもつ積層導体の一方の金属面を直接、金属間接続し、
    前記積層導体の他方の金属面には、第２の取り出し電極をハンダを介して接続したパワー半導体モジュールにおいて、
    前記積層導体は、複数のアーチ状の凸部と該アーチ状の凸部を接続する直線部を備え、該直線部を前記半導体素子の表面と接続し、前記凸部を前記第２の取り出し電極と接続するとともに、
    前記第１の取り出し電極および積層導体は、平板状の絶縁板を介して平板状の第１の冷却装置の一方の面に配置し、前記第２の取り出し電極は平板状の第２の冷却装置の一方の面に配置し、
    前記第１の冷却装置の他方の面にはスイッチング時における電圧変動を抑制するためのコンデンサを配置し、該コンデンサの上面に前記半導体素子をスイッチング駆動するドライバ基板を配置したことを特徴とするパワー半導体モジュール。
  8. 表面と裏面に接続用の電極面を有する半導体素子の裏面を、第１の取り出し電極に対し、ハンダを介して接続し、
    前記半導体素子の表面には、少なくとも２種類の金属を積層した積層構造をもつ積層導体の一方の金属面を直接、金属間接続し、
    前記積層導体の他方の金属面には、第２の取り出し電極をハンダを介して接続したパワー半導体モジュールにおいて、
    前記積層導体は、複数のアーチ状の凸部と該アーチ状の凸部を接続する直線部を備え、該直線部を前記半導体素子の表面と接続し、前記凸部を前記第２の取り出し電極と接続するとともに、
    前記第１の取り出し電極および積層配線導体は、平板状の絶縁板を介して、内部に冷却通路を形成した平板状の第１の冷却装置の一方の面に配置し、前記第２の取り出し電極は、内部に冷却通路を形成した平板状の第２の冷却装置の一方の面に配置し、
    前記第１の冷却装置の他方の面にはスイッチング時における電圧変動を抑制するためのコンデンサを配置し、該コンデンサの上面に前記半導体素子をスイッチング駆動するドライバ基板を配置したことを特徴とする電力変換装置。
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