CN105244331A - 一种芯片封装结构 - Google Patents
一种芯片封装结构 Download PDFInfo
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Abstract
本发明实施例公开了一种芯片封装结构。该结构包括:引线框架;位于所述引线框架上的芯片;通用桥,通过导电结合材与芯片电连接,所述导电结合材中设置有支撑物,所述支撑物分别与所述芯片和所述通用桥接触。本发明实施例提供的一种芯片封装结构,实现桥结构的统一生产,从而方便管理,且较低产品成本,缩短开发周期。
Description
技术领域
本发明实施例涉及应用半导体封装构造,尤其涉及一种芯片封装结构。
背景技术
半导体封装产业发展出各种不同形式的封装构造,例如将多个芯片整合于单一封装模组内。当欲将多个芯片(例如逻辑芯片和储存芯片)整合设置在一封装基板上时,通常必须先设置一中介层于所述基板上,接着再将所述芯片设置于所述中介层上,通过中介层上下表面进行线路重新布局,完成芯片与基板之间的电性连接。
现有技术中利用桥结构作为中介层,用于连接芯片与基板电路。如图1是现有技术中的一种桥结构刨面图所示,现有技术中的桥一般包括:电路连接部分01、芯片连接部分02及支撑结构部分03。其中,支撑结构部分03用于防止因为焊锡或导电胶没有固定形状而导致所述桥坍塌或连接面积过大。因为现有技术中该支撑结构部分03和桥是一体的,不可分离的。因此,一种带有不可移动的支撑结构部分的桥结构只适用一种芯片和电路的连接,从而导致桥结构不能统一生产管理,及生产成本的提高。
发明内容
本发明实施例提供一种芯片封装结构,以实现桥结构的统一生产,从而方便管理,且较低产品成本,缩短开发周期。
本发明实施例提供了一种芯片封装结构,该结构包括:
引线框架;
位于所述引线框架上的芯片;
通用桥,通过导电结合材与芯片电连接,所述导电结合材中设置有支撑物,所述支撑物分别与所述芯片和所述通用桥接触。
进一步的,所述支撑物为金属球,且金属球的熔点高于焊锡。
进一步的,所述金属球是银球或铜球。
进一步的,所述金属球采用超声波热焊工艺与所述芯片和所述通用桥接触。
进一步的,所述支撑物为具有一定柔性的金属线,所述金属线以其中点为顶点,两端弯曲成一定度角,所述顶点通过导电结合材与芯片电连接,所述金属线两端抵住通用桥的下表面。
进一步的,所述金属线为铝芯,其外层为银层。
进一步的,所述结合材料为锡材。
进一步的,所述结合材料为银材或导电胶。
本发明通过导电结合材中设置支撑物,该支撑物可以根据芯片的不同尺寸及芯片与电路的不同连接方式,设置在不同位置,实现通用桥与芯片的支撑,使得同一个桥结构可以适用于不同尺寸的芯片的连接,从而实现桥结构的统一生产,方便管理,同时较低产品成本,缩短开发周期。
附图说明
图1是现有技术中的一种桥结构刨面图;
图2A是本发明实施例一中的一种芯片封装结构的俯视图;
图2B为沿着图2A中的A-A方向的焊接结构刨面图;
图3A是本发明实施例二中的一种芯片封装结构的俯视图;
图3B为沿着图3A中的A-A方向的焊接结构刨面图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅仅用于解释本发明,而非对本发明的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本发明相关的部分而非全部结构。
实施例一
图2A是本发明实施例一中的一种芯片封装结构的俯视图,本实施例可适用于桥与芯片的连接,该焊接结构包括:引线框架1、芯片2和通用桥3。
其中,芯片2位于引线框架1上,该芯片2的尺寸可以有多种。
为适应不同尺寸芯片2的连接,通用桥3与芯片2连接所用的导电结合材5中设置有支撑物,所述支撑物分别与芯片2和通用桥3接触。该支撑物可以是任意形状,例如可以是正方体,本实施例优选为熔点高于锡材的金属球4,用于支撑通用桥3。该金属球4可以通过超声波冷焊技术与芯片2和通用桥3连接任意一端或两端,为方便连接本实施例优选金属球4为银球。为降低成本,该银球也可以是表面镀银的金属球,或者是上下铺有锡材焊点的铜球。
其中,实现芯片2和通用桥3的电性连接的可以是导电结合材料也可以是导电金属球,该导电结合材可以是银材、锡材或导电胶等。
该通用桥框架的焊接结构的工作原理为:通用桥3通过金属球4支撑在芯片2上,然后利用导电结合材5或导电金属球实现通用桥3和芯片2的电性连接。
本实施例的技术方案中,通用桥通过根据芯片的不同尺寸及芯片与电路的不同连接方式,设置金属球在不同位置支撑于芯片之上,实现同一个桥结构可以适用于不同尺寸的芯片的连接,从而实现桥结构的统一生产,方便管理,同时较低产品成本,缩短开发周期。
实施例二
图3A是本发明实施例二中的一种芯片封装结构的俯视图,本实施例是在实施例一的基础上提出的一种芯片封装结构,该结构可适用于桥与芯片的连接,该焊接结构包括:引线框架1,芯片2,和通用桥3。
当通用桥3上放置重物时,为防止把芯片2压碎,通用桥3和芯片2连接的导电结合材5中设置的支撑物为具有一定柔性的金属线6。该金属线以其中点为顶点,两端弯曲成一定度角,所述顶点通过导电结合材5与芯片2连接,所述金属线6两端抵住通用桥3的下表面。因此,当通用桥3上放置重物时,因为弯曲的金属线6有一定弹性,从而对通用桥3上重物所产生的重力有一定缓冲。
其中,金属线6可以是任意具有一定柔性的金属线,例如可以是铜线或铝线,为方便该金属线6与芯片的连接及降低成本,本实施例优选该金属线为铝芯,银外层。
其中,实现芯片2和通用桥3的电性连接的可以是导电结合材料也可以是导电金属线。
本实施例的技术方案中,通用桥3根据芯片的不同尺寸及芯片与电路的不同连接方式,通过弯曲的铝芯银外层的金属线6支撑于芯片2之上,实现同一个桥结构可以适用于不同尺寸的芯片2的连接。因为,弯曲的金属线6有一定弹性,从而对通用桥3上重物所产生的重力有一定缓冲,防止芯片2被压碎。
注意,上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解,本发明不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此,虽然通过以上实施例对本发明进行了较为详细的说明,但是本发明不仅仅限于以上实施例,在不脱离本发明构思的情况下,还可以包括更多其他等效实施例,而本发明的范围由所附的权利要求范围决定。
Claims (8)
1.一种芯片封装结构,其特征在于,包括:
引线框架;
位于所述引线框架上的芯片;
通用桥,通过导电结合材与芯片电连接,所述导电结合材中设置有支撑物,所述支撑物分别与所述芯片和所述通用桥接触。
2.根据权利要求1所述的封装结构,其特征在于,
所述支撑物为金属球,且金属球的熔点高于焊锡。
3.根据权利要求2所述的封装结构,其特征在于,
所述金属球是银球或铜球。
4.根据权利要求2所述的封装结构,其特征在于,
所述金属球采用超声波热焊工艺与所述芯片或所述通用桥接触。
5.根据权利要求1所述的封装结构,其特征在于,
所述支撑物为具有一定柔性的金属线,所述金属线以其中点为顶点,两端弯曲成一定度角,所述顶点通过导电结合材与芯片连接,所述金属线两端抵住通用桥的下表面。
6.根据权利要求5所述的封装结构,其特征在于,
所述金属线内层为铝芯,其外层为银层。
7.根据权利要求1所述的封装结构,其特征在于,
所述导电结合材料为锡材。
8.根据权利要求1所述的封装结构,其特征在于,
所述导电结合材料为银材或导电胶。
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US20110241198A1 (en) * | 2010-04-02 | 2011-10-06 | Hitachi, Ltd. | Power Semiconductor Module |
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