JP2010171344A - Vacuum treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent heat storage in a substrate transport means by arranging a cooling block for cooling the substrate transport means in a vacuum transport chamber. <P>SOLUTION: The vacuum treatment device includes: the substrate transport means (second transport arms 3) arranged in the vacuum transport chamber (second transport chamber 24) for transporting a substrate between preliminary vacuum chambers (load lock chambers 22, 23) and a plurality of vacuum treatment chambers 25A-25D; cooling blocks 51 the surfaces of which are each arranged adjacent to a holding arm 33 of the second transport arm 3 when the holding arms 33 move forward/backward with respect to the vacuum treatment chambers 25B, 25C at positions facing the transport openings of the vacuum treatment chambers 25B, 25C where a vacuum treatment is carried out in a heated state in the second transport chamber 24, and which include cooling means for cooling the surfaces thereof; and a heat-transfer gas supply means for supplying a heat-transfer gas between the holding arms 33 and the surfaces of the cooling blocks 51. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention is a technique for cooling the substrate transfer means in a vacuum processing apparatus in which a plurality of vacuum processing chambers are connected to a vacuum transfer chamber provided with a substrate transfer means.

  In the manufacturing process of semiconductor devices, there is a process of subjecting a semiconductor wafer (hereinafter referred to as “wafer”), which is a semiconductor substrate, to predetermined vacuum processing such as etching processing, film forming processing, and ashing processing. A so-called multi-chamber in which a plurality of vacuum processing chambers are connected to a common vacuum atmosphere transfer chamber, and the vacuum transfer chamber and a normal pressure atmosphere transfer chamber are connected via a spare vacuum chamber forming a load lock chamber A vacuum processing apparatus of the type is known.

  Such a vacuum processing apparatus is shown in FIG. In this apparatus, the wafer in the carrier 10 is received by the first transfer arm 12 of the transfer chamber 11 in the normal pressure atmosphere, and transferred to the preliminary vacuum chamber 13 in the normal pressure atmosphere by the transfer arm 12. Next, after the atmosphere in the preliminary vacuum chamber 13 is switched to a predetermined vacuum atmosphere, the wafer is received by the second transfer arm 14 and transferred into the predetermined vacuum processing chamber 16 via the vacuum transfer chamber 15. A vacuum treatment is applied. Thereafter, the wafer is transferred by the second transfer arm 14 through the vacuum transfer chamber 15 to the preliminary vacuum chamber 13 in a vacuum atmosphere, and after the atmosphere in the preliminary vacuum chamber 13 is switched to the atmospheric pressure, the first The carrier arm 12 returns the carrier 10 through the carrier chamber 11. Here, as the second transfer arm 14, for example, an articulated arm is used, and the holding arm for holding the wafer W is driven so as to be able to advance and retreat and rotate freely by a driving mechanism including a pulley and a timing belt (not shown). It is configured as follows.

  In the vacuum processing chamber 16, vacuum processing may be performed on the wafer W in a heating atmosphere such as 700 ° C. to 800 ° C., such as titanium nitride (TiN) film forming processing. The film forming process is performed, for example, by placing a wafer on a mounting table with a built-in heater, heating the wafer, and introducing a film forming gas into the vacuum processing chamber 16. At this time, in order to improve the throughput put, the wafer in the high temperature state after the film forming process is completed is immediately unloaded from the vacuum processing chamber 16 by the second transfer arm 14, and then the next wafer W is transferred to the vacuum processing chamber 16. It is carried in.

  However, since the surface of the mounting table is hot, it is recognized that when the wafer is received with the transfer arm 14 approaching the mounting table surface, a phenomenon that the holding arm is warped occurs. This phenomenon is caused by the heat of the wafer itself or the mounting table being transferred to the holding arm, causing the thermal expansion of the holding arm itself, or the heat being transferred from the holding arm to a drive mechanism such as a timing belt or a pulley, and stored in these. As a result, it may be caused by a change in the tension of the timing belt. For example, when vacuum processing is performed on a wafer in a heating atmosphere at 700 ° C. to 800 ° C., the second transfer arm 14 receives the wafer from the vacuum processing chamber 16 and passes it to the preliminary vacuum chamber 13 until the wafer is transferred to the preliminary vacuum chamber 13. Although it is about 20 seconds, it is known that the temperature of the holding arm rises to about 180 ° C. and the drive mechanism rises to about 80 ° C. during this period. When the holding arm is warped in this way, the preset clearance of the holding arm at the time of transferring the wafer changes, and the holding arm does not collide with the wafer or transfer the wafer to a predetermined position. Cause malfunctions.

  Such a problem is caused by the recent demand for throughput improvement, and the processing time in the vacuum processing chamber 16 is shortened. As a result, the number of wafers W processed per unit time increases, and the second transfer arm 14 is increased. It has become apparent from the fact that the frequency of operation has increased. That is, the waiting time of the second transfer arm 14 is reduced, and the next wafer W is transferred before the transfer arm 14 is sufficiently dissipated. The problem is that heat gradually accumulates.

Wherein warping of the holding arms is believed to be prevented by suppressing the heat accumulation in the transport arm 1 4, when the development of the transfer arm 1 4, since the processing accuracy and operation accuracy is required, very evaluation Takes a long time. Therefore, from the viewpoint of developing the transfer arm and the apparatus, it is preferable that there are few changes on the transfer arm side. From such a request, the present inventors provide a mechanism for cooling the transfer arm on the apparatus side, and the transfer arm is provided. We are considering reducing heat storage inside.

  By the way, in Patent Document 1, by providing a cooling plate between the upper arm and the lower arm in the substrate transfer robot, the thermal effect between the upper arm and the lower arm and the substrates held by these arms is suppressed, A configuration for precisely controlling the temperature of a substrate has been proposed. However, this configuration provides a cooling mechanism on the arm side, and even with the configuration of this document 1, the problem of the present invention cannot be solved.

Japanese Patent Laid-Open No. 11-87464

  The present invention has been made under such circumstances, and an object of the present invention is to provide a vacuum processing apparatus that prevents heat storage in the substrate transfer means by providing a cooling block for cooling the substrate transfer means. is there.

For this reason, the vacuum processing apparatus of the present invention is configured to be switchable between a normal pressure atmosphere and a vacuum atmosphere, and a preliminary vacuum chamber into which a substrate is carried from the outside,
Each substrate is subjected to vacuum processing, and at least one vacuum processing chamber includes a plurality of vacuum processing chambers in which vacuum processing is performed in a heated atmosphere;
A vacuum transfer chamber connected to the vacuum processing chamber and the preliminary vacuum chamber;
A substrate transfer means provided in the vacuum transfer chamber for transferring the substrate between the preliminary vacuum chamber and the vacuum processing chamber, comprising a holding arm on which the substrate is placed and which can be moved forward and backward.
Among the plurality of vacuum processing chambers, when the holding arm advances and retreats with respect to the vacuum processing chamber at a position facing the transfer port of the vacuum processing chamber where vacuum processing is performed in a heated state, the surface of the vacuum processing chamber is held A cooling block provided close to the arm and provided with cooling means for cooling the surface;
And a heat conduction gas supply means for supplying a heat conduction gas between the holding arm and the surface of the cooling block.

  Here, it is preferable that the heat conduction gas supply means is provided so as to supply heat conduction gas from the surface of the cooling block toward the holding arm. Moreover, you may comprise so that the supply hole of heat conductive gas may be formed in the surface facing the said holding | maintenance arm in the said cooling block. The cooling block can be provided on the lower side or the upper side of the holding arm when the holding arm advances and retreats with respect to the vacuum processing chamber. In addition, when the cooling block is provided on the lower side of the holding arm, an unevenness may be formed on at least a part of the lower surface side of the holding arm to radiate heat.

  According to the present invention, the heat transfer gas is supplied between the cooling block and the holding arm when the holding arm of the substrate transfer means is withdrawn from the vacuum processing chamber in which the vacuum processing is performed in a heating atmosphere. In the transfer chamber, convection due to heat conduction gas is generated between the surface of the cooling block and the holding arm. At this time, since the surface of the cooling block is cooled, the heat of the holding arm moves to the cooling block side, and heat storage to the substrate transfer means is suppressed.

It is a top view which shows the vacuum processing apparatus which concerns on one embodiment of this invention. It is sectional drawing which shows an example of the 2nd conveyance chamber provided in the said vacuum processing apparatus. It is a top view which shows an example of the said 2nd conveyance arm. It is sectional drawing which shows the transmission system of a said 2nd conveyance arm. It is the top view and sectional view showing an example of the 2nd conveyance arm. It is sectional drawing which shows the principal part of an example of the said 2nd conveyance chamber. It is sectional drawing explaining the effect | action of this invention. It is sectional drawing explaining the effect | action of the cooling block provided in the said 2nd conveyance chamber. It is sectional drawing which shows the other example of the said 2nd conveyance chamber. It is sectional drawing which shows the further another example of the said 2nd conveyance chamber. It is sectional drawing which shows the further another example of the said 2nd conveyance chamber. It is sectional drawing which shows the further another example of the said 2nd conveyance chamber. It is sectional drawing which shows the further another example of the said 2nd conveyance chamber. It is sectional drawing which shows the further another example of the said 2nd conveyance chamber. It is a top view which shows the conventional vacuum processing apparatus.

  Hereinafter, an embodiment of the vacuum processing apparatus 2 of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing the overall configuration of the vacuum processing apparatus 2. The vacuum processing apparatus 2 includes a first transfer chamber 21 constituting a loader module for loading and unloading a wafer W, and a preliminary vacuum chamber. Load lock chambers 22 and 23 formed, a second transfer chamber 24 which is a vacuum transfer chamber, and four vacuum processing chambers 25A to 25D. A load port 26 on which the carrier C is placed is provided in front of the first transfer chamber 21, and the carrier C placed on the load port 26 is placed on the front wall of the first transfer chamber 21. A gate door GT that is connected and opened and closed together with the lid of the carrier C is provided.

  The load lock chambers 22 and 23 are each provided with a vacuum pump and a leak valve (not shown) so that the internal atmosphere can be switched between a normal pressure atmosphere and a vacuum atmosphere. That is, since the atmospheres of the first transfer chamber 21 and the second transfer chamber 24 are maintained at the normal pressure atmosphere and the vacuum atmosphere, respectively, the load lock chambers 22 and 23 transfer the wafer W between the transfer chambers. When adjusting the atmosphere. In the figure, G1 is between the first transfer chamber 21 and the load lock chambers 22, 23, G2 is between the load lock chambers 22, 23 and the second transfer chamber 24, and G3 is between the second transfer chamber 24 and Gate valves (partition valves) for partitioning the vacuum processing chambers 25A to 25D.

  Further, a first transfer arm 27 is provided in the first transfer chamber 21. The first transfer arm 27 is a transfer arm for transferring the wafer W between the carrier C and the load lock chambers 22 and 23. For example, the first transfer arm 27 moves in the arrangement direction of the carrier C (X direction in FIG. 1). It is configured to be freely movable, vertically movable, rotatable about the vertical axis, and freely movable back and forth.

  In FIG. 1, the arrangement direction of the carrier C (X direction in FIG. 1) is the left-right direction, the direction orthogonal to the arrangement direction of the carrier C (Y direction in FIG. 1) is the length direction, and the side on which the carrier C is provided. When referred to as the front side, the second transfer chamber 24 has a hexagonal plan shape, for example, and load lock chambers 22 and 23 are provided on the front side of the second transfer chamber 24. The vacuum processing chambers 25A and 25D are airtightly connected to both the left and right sides of the second transfer 24, respectively, and the two vacuum processing chambers 25B and 25C are airtightly connected to the back side thereof. . For example, a film forming apparatus, an annealing apparatus, an etching apparatus, and the like are assigned to the vacuum processing chambers 25A to 25D. In this example, in the vacuum processing chambers 25A and 25D, a titanium (Ti) film forming process and a vacuum processing chamber 25B are used. 25C, titanium nitride (TiN) is formed in a heated atmosphere. In this example, the vacuum processing chambers 25B and 25C correspond to vacuum processing chambers that perform vacuum processing in a heated atmosphere.

  The second transfer chamber 24 includes a second transfer arm 3 that serves as a substrate transfer means. By the transfer arm 3, the wafer W is placed between the load lock chambers 22 and 23 and the vacuum processing chambers 25A to 25D. Delivery is to be performed. As the second transfer arm 3, for example, an articulated arm as shown in FIGS. 1 to 5 is used. In this arm, as shown in FIG. 3 (a), a first arm 31, a second arm 32 provided at the tip of the first arm 31 so as to be rotatable in the horizontal direction, and the second arm 31. And a holding arm 33 provided at the tip of the arm 32 so as to be rotatable in the horizontal direction. In the second transfer arm 3, for example, at the reference position shown in FIGS. 2 and 3B, the first arm 31 and the second arm 32 overlap with each other, and the holding arm 33 is straight with the second arm 32. It is provided so that it may be on a line. For example, the holding arm 33 is pivotally supported by the second arm 32 on the base end side, and the holding arm 33 is provided on the tip end side thereof and is formed in a fork shape for holding the wafer W. It is comprised by the site | part 34 and the arm part 34a for supporting the said holding | maintenance site | part 34. As shown in FIG.

  The transmission system of the second transfer arm 3 will be described with reference to FIG. 4. The first arm 31 is configured to turn around a cylindrical turning shaft 40 having a turning center 40A as a rotation center. ing. On the base end side of the first arm 31, a base that is rotatable independently of the first arm 31 by a rotation shaft 41 provided in the cylindrical rotation shaft 40 with the rotation center 40 </ b> A as a rotation center. An end pulley 42 is provided. A support pulley 43 that supports the second arm 32 and rotates integrally with the second arm 32 is rotatably provided at the distal end portion of the first arm 31. The end pulley 42 and the timing belt 44 are connected.

  A second arm 32 is fixed to an upper end portion of a hollow rotating shaft 45 provided on the upper side of the support pulley 43. An intermediate pulley 46 is provided coaxially with the support pulley 43 at the base end portion of the second arm 32, while a tip pulley 47 is rotatably provided at the tip end portion of the second arm 32. The pulley 47 is connected to the intermediate pulley 46 by a timing belt 48. The holding arm 33 is fixed to the upper end portion of the rotary shaft 49 provided on the upper side of the tip pulley 47.

  In FIG. 4, reference numerals 35 and 36 denote a drive mechanism for the turning shaft 40 and a drive mechanism for the rotary shaft 41 in the second transfer arm 3, respectively, and these drive mechanisms 35 and 36 correspond to a mechanism comprising a motor, a pulley, a belt, and the like. . The pivot drive mechanism 35 of the first arm 31 is provided on a base 30B, and this base 30B is movable along the length direction (Y direction in FIG. 1) along the guide rail 37. It is configured. Thus, the second transfer arm 3 is configured to be movable in the length direction, rotatable (turned) and reciprocated around the vertical axis, and is configured to be movable relative to the load lock chambers 22 and 23 and the vacuum processing chambers 25A to 25D. W is delivered.

  As shown in FIG. 5, a heat radiating member 38 is provided on at least a part of the holding arm 33, for example, on the lower surface of the arm portion 34a. The heat radiating member 38 is made of, for example, a black alumite material, and has an uneven surface formed on the lower surface in order to increase the surface area of the arm portion 34 a and to easily radiate heat from the holding arm 33. Instead of providing the heat radiating member 38, irregularities may be formed on the back side of the arm portion 34a. Further, the region where the unevenness is formed may be provided on the back side of the holding portion 34.

  Furthermore, the surface of the second transfer arm 3 is formed of a highly reflective material such as surface polished aluminum, for example. At the reference position, the first arm 31, the second arm 32, and the holding arm 33 are overlapped with each other. However, by using such a highly reflective material, absorption of heat from the upper side can be suppressed. . In addition, you may make it coat | cover the high reflection material on the surface instead of forming with a high reflection material. In addition, the region formed by the highly reflective material may not be the entire transfer arm 3, and may suppress heat transfer to a driving mechanism such as a timing belt such as the first arm 31 or the second arm 32 or a pulley. In addition, it is only necessary that the upper side is included in the portion where these drive mechanisms are provided.

  A cooling block 51 is provided in the vicinity of the transfer port 200 of the vacuum processing chambers 25 </ b> B and 25 </ b> C in the second transfer chamber 24. As shown in FIGS. 1, 2 and 6, the cooling block 51 is a position facing the transfer port 200 of the vacuum processing chambers 25B and 25C where the wafer W is processed in a heated atmosphere, for example. The second transfer arm 3 is provided on the lower side of the moving path of the second transfer arm 3 when accessing the vacuum processing chambers 25B and 25C. In this example, when the holding arm 33 accesses the vacuum processing chambers 25 </ b> A to 25 </ b> D, in the length direction of the second transfer chamber 24, the first arm 31 and the second arm 32 in the second transfer arm 3 Although the holding arm 33 extends substantially in a straight line, the shape, size, and installation position of the cooling block 51 are set so as not to hinder the movement of the arms 31 to 33.

  The cooling block 51 is made of, for example, a housing made of an aluminum material. For example, the cooling block 51 is placed on the bottom surface of the second transfer chamber 24, and the holding arm 33 moves forward and backward with respect to the vacuum processing chambers 25B and 25C. Further, the surface thereof is provided close to the holding arm 33. Further, for example, the planar shape is formed in a quadrangular shape as shown in FIGS. 1 and 3, and the size in the width direction is set to be larger than the length in the width direction of the holding portion 34 of the holding arm 33, for example. Has been.

  Further, a cooling water flow path 52 that is a refrigerant is formed inside the cooling block 51, and the cooling water is circulated and supplied to the flow path 52 from the refrigerant supply section 52A, thereby cooling the surface of the cooling block 51. It is configured to be. In this example, the refrigerant supply unit 52A and the flow path 52 constitute a cooling means.

A gas supply chamber 53 is formed on the entire upper side of the cooling block 51. Nitrogen, which is a heat conduction gas, is connected to the gas supply chamber 53 through a gas supply path 54 having an open / close valve V1. A (N ₂ ) gas supply source 55 is connected. In addition, a large number of gas supply holes 53 a are formed on the ceiling surface of the gas supply chamber 53 (the upper surface of the cooling block 51) over the entire ceiling surface, and the gas supply chamber 53 is connected to the gas supply chamber 53. The supplied heat conduction gas is discharged toward the upper side of the cooling block 51 through the gas supply hole 53a. Argon (Ar) gas, hydrogen (H ₂ ) gas, or the like may be used as the heat conduction gas. In this example, a heat conduction gas supply means is configured by the gas supply chamber 53 provided with the gas supply holes 53 a, the gas supply path 54, and the gas supply source 55.

  Further, for example, a light emitting unit 61 of the optical sensor 6 is provided at a position near the vacuum processing chambers 25B and 25C on the upper surface of the cooling block 51. For example, the light emitting unit 61 in the ceiling of the second transfer chamber 24 is provided. On the optical axis L, a light receiving unit 62 is provided. In this example, for example, when the light emitting unit 61 is allowed to emit light constantly and the light receiving unit 62 cannot receive the light, the supply timing of the heat conduction gas is such that the opening / closing valve V1 is opened to supply the heat conduction gas. To be controlled. That is, when the second transfer arm 3 tries to pass above the cooling block 51 and intercepts the optical axis L, the light receiving unit 62 cannot receive light. At this time, the heat transfer gas is supplied from the cooling block 51. The In the optical sensor 6, the light receiving unit 62 may be provided in the cooling block 51, and the light emitting unit 61 may be provided in the ceiling portion of the second transfer chamber 24. The distance between the surface of the cooling block 51 and the lower surface of the lowermost arm passing above the cooling block 51 is set to about 2 to 3 mm. An exhaust port 29 is formed in the lower surface of the second transfer chamber 24, and a vacuum pump 57 serving as a vacuum exhaust means is connected to the exhaust port 29 via an exhaust path 56 provided with an opening / closing valve V2. Thus, the inside of the second transfer chamber 24 is maintained at a predetermined degree of vacuum.

Next, the vacuum processing chambers 25B and 25C for processing the wafer W in a heated atmosphere will be described with reference to FIG. 7. The vacuum processing chambers 25B and 25C are similarly configured, and the gate valve G3 is provided on the side wall thereof. A transfer port 200 that is opened and closed is formed. Inside the vacuum processing chambers 25 </ b> B and 25 </ b> C, there is provided a mounting portion 201 in which a heater H as a heating means is built. Inside the mounting portion 201, a holding arm of the second transfer arm 3 is provided. In order to transfer the wafer W to and from the holding portion 34 in 33, lift pins 203 that are lifted and lowered by the lift mechanism 202 are provided. In addition, a gas supply chamber 204 having a large number of gas supply holes 205 formed in the lower surface thereof is provided at the upper portion in the vacuum processing chamber 25B (25C) so as to face the mounting portion 201 described above. The supply chamber 204 is connected to a TiCl ₄ gas supply source 207 and an NH ₃ gas supply source 208 through a gas supply path 206. Reference numerals 209 and 210 denote flow rate adjusting units. The inside of the vacuum processing chamber 25B (25C) is maintained at a predetermined degree of vacuum by a vacuum pump 212 which is a vacuum exhaust unit connected via an exhaust path 211.

  Further, as shown in FIG. 1, the vacuum processing apparatus is provided with a control unit 100 composed of, for example, a computer. The control unit 100 includes a data processing unit composed of a program, a memory, and a CPU. Includes a command (each step) to send a control signal from the control unit 100 to each part of the vacuum processing apparatus, and to advance a transfer sequence described later. This program is stored in a storage unit such as a computer storage medium such as a flexible disk, a compact disk, a hard disk, or an MO (magneto-optical disk) and installed in the control unit 100. Here, in the second transfer chamber 24, control signals are sent to the respective parts when the control unit 100 performs processing such as opening / closing the gate valve G 3, driving the second transfer arm 3, supplying heat conduction gas from the cooling block 51. Is to be sent.

  Next, the flow of the wafer W in the vacuum processing apparatus will be briefly described. First, the sealed carrier C in which a large number of wafers W are stored is carried into the first transfer chamber 21, and the wafer W in the carrier C is received by the first transfer arm 27. Next, the gate valve G1 of the load lock chambers 22 and 23 in the atmospheric pressure atmosphere is opened, the wafer W is loaded into the load lock chambers 22 and 23 by the first transfer arm 27, and the gate valve G1 is closed. Next, after depressurizing the load lock chambers 22 and 23 to a predetermined vacuum atmosphere, the gate valve G2 is opened, the wafer W is received by the second transfer arm 3, and the gate valve G2 is closed.

  Then, the wafer W is transferred to, for example, the vacuum processing chambers 25A and 25D by the second transfer arm 3. In these vacuum processing chambers 25A and 25D, the gate valve G3 is opened, the wafer W is received from the second transfer arm 3, the gate valve G3 is closed, and a titanium (Ti) film is formed on the wafer surface. Process. Then, the gate valve G3 is opened and the processed wafer W is transferred to the second transfer arm 3.

Subsequently, the wafer W is transferred to the vacuum processing chambers 25B and 25C where the processing is performed while being heated by the second transfer arm 3, where titanium nitride (TiN) is formed on the titanium film. Process. At this time, in these vacuum processing chambers 25B and 25C, the gate valve G3 is opened, the wafer W is received from the second transfer arm 3 and placed on the placement unit 201, and the gate valve is retracted after the second transfer arm 3 is retracted. Close G3. Then, a film forming gas containing TiCl ₄ gas and NH ₃ gas is introduced into the vacuum processing chambers 25B and 25C through the gas supply chamber 204 through the gas supply chamber 204, and the mounting portion 201 is heated to 700 ° C. to 800 ° C. Then, a TiN film forming process is performed. Then, immediately after the processing is completed, the gate valve G3 is immediately opened, the wafer W in a high temperature state is transferred to the second transfer arm 3 that has entered, and after the second transfer arm 3 is retracted, the gate valve G3 is closed.

  The wafers W processed in the vacuum processing chambers 25B and 25C in this way are carried into the load lock chambers 22 and 23 set in a vacuum atmosphere by the second transfer arm 3. Next, after returning the inside of the load lock chambers 22 and 23 to the normal pressure atmosphere, the wafer W in the load lock chambers 22 and 23 is received by the first transfer arm 27, and a predetermined carrier C is received via the first transfer chamber 21. Returned to

  Here, the process of carrying the wafer W in and out of the vacuum transfer chambers 25B and 25C will be described with reference to FIG. At this time, in the vacuum processing chambers 25B and 25C, the gate valve G3 is opened as shown in FIG. 8A, and the second transfer arm 3 is placed in the vacuum processing chambers 25B and 25C as shown in FIG. 8B. And the wafer W is delivered to the mounting portion 201 by joint work with the lifting pins 203 (not shown). However, the second transfer arm 3 passes above the cooling block 51 and passes through the optical sensor. When the optical axis L of 6 is interrupted, discharge of the heat conduction gas from the cooling block 51 is started. At this time, the cooling block 51 constantly circulates and supplies cooling water to cool the surface of the cooling block 51.

  Here, when the wafer W is carried into the vacuum processing chambers 25 </ b> B and 25 </ b> C by the holding arm 33, the optical axis L is blocked by a part of the second transfer arm 3, so that the second transfer arm 3 is cooled. The heat conduction gas is continuously supplied from the block 51. After the wafer W is transferred to the vacuum processing chambers 25B and 25C in this way, the holding arm 33 is withdrawn from the vacuum processing chambers 25B and 25C. At this time, the second transfer arm 3 blocks the optical axis L. During this time, that is, while at least a part of the second transfer arm 3 is on the upper side of the cooling block 51, the heat transfer gas is continuously supplied to the second transfer arm 3.

  Similarly, when the processed wafer W is unloaded from the vacuum processing chambers 25 </ b> B and 25 </ b> C, when the holding arm 33 blocks the optical axis L of the optical sensor 6, the heat transfer gas is directed toward the second transfer arm 3. Start spraying. The heat conduction gas unloads the wafer W from the vacuum processing chambers 25B and 25C, and the holding arm 33 holding the wafer W retracts toward the load lock chambers 22 and 23 from the cooling block 51 (FIG. 8C). )), The heat transfer gas is supplied to the second transfer arm 3.

  Here, since the optical sensor 6 is provided at a position close to the vacuum processing chambers 25B and 25C in the cooling block 51, immediately before the tip of the second transfer arm 3 enters the vacuum processing chambers 25B and 25C, The heat transfer gas is supplied toward the second transfer arm 3 until the end of the second transfer arm 3 is immediately after the tip of the second transfer arm 3 is withdrawn from the vacuum processing chambers 25B and 25C. The heat transfer gas is supplied for a period of time during which the second transfer arm 3 cools the cooling block 51 in order to transfer the wafer W between the second transfer arm 3 and the mounting portions in the vacuum processing chambers 25B and 25C. It is almost equal to the time of stopping at the upper side of.

  Here, as described above, the cooling block 51 is set to have a size in the width direction larger than that in the width direction of the holding portion 34. Therefore, the holding arm 33 holding the wafer W is attached to the vacuum processing chambers 25B and 25C. When retreating, the entire back side always passes the upper side of the cooling block 51. At this time, the heat conduction gas is uniformly supplied to the entire back side of the arm portion 34a and the holding portion 34.

  When the heat transfer gas is supplied from the cooling block 51 to the second transfer arm 3 as described above, the second transfer chamber 24 is evacuated through the exhaust port 29 as shown in FIG. This heat conduction gas is also exhausted to the outside of the apparatus through the exhaust port 29, but the pressure locally increases between the cooling block 51 and the second transfer arm 3 due to the heat conduction gas. Therefore, also in the second transfer chamber 24 in a vacuum atmosphere, convection of the heat conduction gas is locally generated between the second transfer arm 3 and the cooling block 51. On the other hand, since the surface of the cooling block 51 is cooled by the flow of the cooling water, the heat of the second transfer arm 3 moves to the cooling block 51 side by the convection of the heat conduction gas. In the cooling block 51, the heat moved from the second transfer arm 3 is taken away by the cooling water and moves to the outside of the apparatus. As described above, the heat of the second transfer arm 3 moves to the cooling block 51 via the heat conduction gas as shown by an arrow in FIG. The transfer arm 3 quickly dissipates heat, and the second transfer arm 3 is cooled.

  As described above, in the present invention, when the wafer W is loaded into and unloaded from the vacuum processing chambers 25B and 25C in which processing is performed in a heated atmosphere by the second transfer arm 3, a part of the second transfer arm 3 is a cooling block. While being located above 51, the heat conduction gas is blown toward the second transfer arm 3. As a result, heat transfer occurs from the transfer arm 3 to the cooling block 51 in a portion of the second transfer arm 3 to which the heat transfer gas is supplied as described above, and heat is quickly radiated from the transfer arm 3. The Therefore, even when the next wafer W is transferred before the transfer arm 3 is operated frequently and heat is not sufficiently radiated from the transfer arm 3, heat storage on the transfer arm 3 can be suppressed. it can. For this reason, heat transfer to the drive mechanism such as the timing belt and the pulley is prevented, the change in the tension of the timing belt due to the thermal effect is suppressed, and the occurrence of the warp of the holding arm 33 is suppressed. As a result, the transfer clearance of the holding arm 33 is always kept within the set range, so that the transfer of the wafer W can be reliably performed with high accuracy.

  Here, when the second transfer arm 3 is positioned above the cooling block 51, the gap between them is set to be as small as about 2 to 3 mm. The pressure is likely to increase, and the heat transfer by the convection of the heat transfer gas from the second transfer arm 3 to the cooling block 51 is favorably performed.

  When only the cooling block 51 is used, the heat of the second transfer arm 3 does not move to the cooling block 51 in a vacuum state, so the heat of the second transfer arm 3 is not radiated and the transfer arm 3 is not radiated. Can not be cooled. Further, it is empirically understood that the heat transfer gas cannot be efficiently taken away because the heat transfer gas is diffused only by spraying the cold heat transfer gas on the second transfer arm 3. ing.

  Further, as described above, in order to transfer the wafer W between the second transfer arm 3 and the placement unit 201 in the vacuum processing chambers 25 </ b> B and 25 </ b> C, the second transfer arm 3 includes the cooling block 51. When the heat transfer gas is supplied to the second transfer arm 3 when stopped on the upper side, sufficient heat dissipation occurs from the vicinity of the base end side of the holding arm 33 to which the heat transfer gas is blown, Heat transfer from the holding arm 33 to the base end side can be effectively suppressed. Furthermore, since the holding part 34 itself holding the wafer W in a high temperature state is cooled when passing over the upper side of the cooling block 51, the amount of heat transferred to the drive mechanism can be reduced, and heat storage in the drive mechanism can be suppressed.

  At this time, after unloading the wafer W from the vacuum processing chambers 25B and 25C, the holding arm 33 holding the wafer W waits for a while on the upper side of the cooling block 51, and after cooling the holding arm 33 to some extent, You may make it perform the conveyance to the following process. The supply of the heat transfer gas to the second transfer arm 3 is performed only when the wafer W is unloaded from the vacuum processing chambers 25B and 25C, and the supply of the heat transfer gas is stopped when the wafer W is loaded into the vacuum processing chambers 25B and 25C. You may make it do.

  Further, a heat radiating member 38 is provided on the lower surface of the arm portion 34a. Since the surface has a large surface area, the heat can be easily radiated from the region. Moreover, since the contact area with the heat conducting gas is increased due to the unevenness, heat is easily taken from the holding arm 33 by the contact with the heat conducting gas.

  Furthermore, since the second transfer arm 3 is cooled by providing the cooling block 51 on the apparatus side, the existing transfer arm 3 can be used. For this reason, unlike the case of developing a new transfer arm, it is not necessary to perform a long-term evaluation operation on processing accuracy, operation accuracy, etc., and a practical application of a new application for cooling the second transfer arm 3 is made in a short period of time. Can reduce the labor.

  As described above, in the present invention, as shown in FIG. 10, the cooling block 71 and the heat conduction gas supply means may be provided separately. The cooling block 71 in this example is configured in the same manner as the cooling block 51 except that the gas supply chamber 53, the gas supply hole 53a, and the gas supply path 54 are not formed. A flow path, 72A is a refrigerant supply part, and 61 is a light emission part.

  In this example, a heat conduction gas supply pipe 73 for supplying a heat conduction gas to the upper side of the cooling block 71 is provided so as to enter the second transfer chamber 24, and the upper side of the cooling block 71. When there is the second transfer arm 3, the heat transfer gas is supplied between the lower surface of the second transfer arm 3 and the surface of the cooling block 71. In this example, the heat conduction gas supply means is constituted by the heat conduction gas supply pipe 73 provided with the opening / closing valve V3 and the heat conduction gas supply source 73A. Other configurations are similar to the example shown in FIG.

  Furthermore, in the present invention, as shown in FIG. 11, the cooling block 74 may be provided above the second transfer arm 3 in the second transfer chamber 24. The cooling block 74 of this example is provided so that the upper surface thereof is in contact with the ceiling of the second transfer chamber 24. A gas supply chamber 75 is formed on the lower side of the cooling block 74, and a gas supply hole 75a is formed on the lower surface thereof. A heat conduction gas supply source 76A is connected to the gas supply chamber 75 via a heat conduction gas supply path 76 having an open / close valve V4. The cooling block 74 is formed with a cooling water flow path 77, and the cooling water is circulated and supplied from the refrigerant supply section 77A. Further, a light emitting unit 61 of the optical sensor 6 is provided on the lower surface of the cooling block 74, and a light receiving unit 62 is provided on the bottom surface of the second transfer chamber 24 so as to face the light emitting unit 61. Other configurations are the same as the example shown in FIG. 6 except that the heat radiating member 38 is not provided on the back side of the holding arm 33.

  Even in such a configuration, when the second transfer arm 3 is positioned below the cooling block 74, the optical axis L of the optical sensor 6 is blocked, so that the heat transfer gas is supplied and the second transfer arm 3 cools. Heat transfer occurs due to the convection of the heat transfer gas toward the block 74 side, and further heat moves from the cooling block 74 to the outside of the apparatus, whereby the second transfer arm 3 is cooled. At this time, the second transfer arm 3 moves to the upper side, so that when the wafer W in a high temperature state is transferred, the heat of the wafer W is taken away and the cooling of the wafer W is also performed. it can. Thus, the amount of heat transferred to the drive mechanism of the second transfer arm 3 can be further reduced by the temperature drop of the wafer W itself and the temperature drop of the holding arm 33. Furthermore, by disposing the cooling block 74 above the moving area of the second transfer arm 3, the movement of the second transfer arm 3 is not hindered, and thus the layout design can be facilitated. It is done.

  Furthermore, in the present invention, the cooling block 51 may be disposed outside the second transfer chamber 24 as shown in FIG. In this example, the bottom surface of the second transfer chamber 24 is formed as a stepped portion 81 so as to be higher than the other regions in the region facing the transfer port 200 of the vacuum processing chambers 25B and 25C. On the lower side, the cooling block 51 shown in FIG. 6 is arranged so that the upper surface thereof is joined to the back surface of the stepped portion 81. Such a step portion 81 is configured such that the surface of the step portion 81 approaches the lower surface of the arm 3 when the second transfer arm 3 is positioned above the step portion 81. Further, a gas supply hole 81 a is formed in the step portion 81 so as to communicate with the gas supply hole 53 a of the cooling block 51, and a light emitting portion 61 of the optical sensor 6 is provided on the surface of the step portion 81. Other configurations are the same as the example of FIG. In such a configuration, since the surface of the cooling block 51 and the bottom surface of the step portion 81 are joined, heat conduction from the cooling block 51 to the second transfer arm 3 via the bottom surface of the step portion 81. Gas is supplied, and the heat from the second transfer arm 3 moves to the cooling block 51 through the step portion 81 by convection of the heat transfer gas.

  Also in this example, when only the cooling block 51 is provided on the lower side of the step portion 81 and the second transfer arm 3 is on the upper side of the step portion 81, the upper surface of the step portion 81 and the second transfer arm 3 A heat conduction gas supply pipe may be provided in the second transfer chamber 24 so as to supply the heat conduction gas between the lower surface and the lower surface.

  Further, as shown in FIG. 13, the ceiling portion of the second transfer chamber 24 is formed as a recess 82 so as to be lower than other regions in the region facing the transfer port 200 of the vacuum processing chambers 25B and 25C. The cooling block 74 of FIG. 11 may be provided on the upper side of the concave portion 82 so that the lower surface thereof is joined to the upper surface of the concave portion 82. The concave portion 82 is configured such that the surface thereof approaches the upper surface of the arm 3 when the second transfer arm 3 is positioned below the concave portion 82. A gas supply hole 82 a is formed on the lower surface of the recess 82 so as to communicate with the gas supply hole 75 a of the cooling block 74, and a light emitting unit 61 of the optical sensor 6 is provided on the bottom surface of the recess 82. Other configurations are the same as the example of FIG. Also in this example, when only the cooling block 74 is provided on the upper side of the recess 82 and the second transfer arm 3 is on the lower side of the recess 82, the lower surface of the recess 82 and the upper surface of the second transfer arm 3 are A heat conduction gas supply pipe may be provided in the second transfer chamber 24 so as to supply the heat conduction gas therebetween.

  Furthermore, in the present invention, as shown in FIG. 14, the heat transfer gas may be supplied downward from the holding arm 84 of the second transfer arm 83. The holding arm 84 in this example has a gas supply chamber 84a formed therein, for example, and a gas supply hole 84b is formed in the lower surface thereof. Other configurations are the same as those of the second transfer arm 3 shown in FIG. As shown in FIG. 14B, the gas supply chamber 84a is provided so as to pass through, for example, the second arm 85, the inside of the first arm 86, the turning shaft 87, and the base 88, and an open / close valve V5. The heat conduction gas is supplied from a heat conduction gas supply source 89A provided outside the apparatus through the gas supply path 89 having the above. In this example, the gas supply chamber 84a, the gas supply hole 84b, the gas supply path 89, and the gas supply source 89A constitute a heat conduction gas supply means.

  On the other hand, in the second transfer chamber 24, a cooling block 71 having the same configuration as that shown in FIG. 10, for example, is provided in a region facing the transfer port 200 of the vacuum processing chambers 25B and 25C, and the second transfer arm 3 is cooled. When located above the block 71, the heat transfer gas is supplied from the second transfer arm 83 toward the cooling block 71, and the heat of the second transfer arm 3 is cooled by the convection of the heat transfer gas. Then, the second transfer arm 83 is cooled. Also in this example, the cooling block 71 may be provided outside the second transfer chamber 24 as shown in FIG.

In the above, in the present invention, the shape of the second transfer arm is not limited to the above-described configuration,
It may be an articulated arm provided with two holding arms. Further, a cooling block that is common to a plurality of vacuum processing chambers may be used. Furthermore, a cooling block may be provided at a position facing the transfer ports of all the vacuum processing chambers. Furthermore, the control of the supply timing of the heat transfer gas is performed by the second transfer arm 3 in order to transfer the wafer W between the mounting portion 201 of the vacuum processing chambers 25B and 25C and the second transfer arm 3. Any structure may be used as long as the heat conduction gas is supplied while the cooling block 51 is stopped above the cooling block 51. Besides using the optical sensor 6, a known structure such as an arm driving pulse sensor used for teaching is used. Can be done. Further, by providing the optical sensor 6 on the second transfer arm 3 side in the cooling block 51, the supply time of the heat conduction gas is lengthened, and the transfer arm 3 is as long as possible while the second transfer arm 3 is moving. Alternatively, the heat conduction gas may be supplied toward the head 3. Further, the holding arm 33 is not necessarily provided with the heat radiating member 38. Further, the present invention can also be applied to a vacuum processing apparatus that processes, for example, an FPD substrate.

C carrier 21 First transfer chamber 22, 23 Load lock chamber (preliminary vacuum chamber)
24 Second transfer chamber (vacuum transfer chamber)
25A to 25D Vacuum processing chamber 3 Second transfer arm 33 Holding arm 38 Heat radiating member 51 Cooling block 52 Channel 53 Gas supply chamber 53a Gas supply hole 54 Thermal conduction gas supply channel 56 Exhaust channel W Semiconductor wafer.

Claims (5)

It is configured to be switchable between a normal pressure atmosphere and a vacuum atmosphere, and a preliminary vacuum chamber into which a substrate is carried from the outside,
Each substrate is subjected to vacuum processing, and at least one vacuum processing chamber includes a plurality of vacuum processing chambers in which vacuum processing is performed in a heated atmosphere;
A vacuum transfer chamber connected to the vacuum processing chamber and the preliminary vacuum chamber;
A substrate transfer means provided in the vacuum transfer chamber for transferring the substrate between the preliminary vacuum chamber and the vacuum processing chamber, comprising a holding arm on which the substrate is placed and which can be moved forward and backward.
Among the plurality of vacuum processing chambers, when the holding arm advances and retreats with respect to the vacuum processing chamber at a position facing the transfer port of the vacuum processing chamber where vacuum processing is performed in a heated state, the surface of the vacuum processing chamber is held A cooling block provided close to the arm and provided with cooling means for cooling the surface;
A vacuum processing apparatus comprising: a heat conduction gas supply means for supplying a heat conduction gas between the holding arm and the surface of the cooling block.   The vacuum processing apparatus according to claim 1, wherein the heat conduction gas supply means is provided so as to supply heat conduction gas from a surface of a cooling block toward the holding arm.   The vacuum processing apparatus according to claim 2, wherein a heat conduction gas supply hole is formed in a surface of the cooling block facing the holding arm.   4. The cooling block according to claim 1, wherein the cooling block is provided on a lower side or an upper side of the holding arm when the holding arm advances and retreats with respect to the vacuum processing chamber. 5. Vacuum processing equipment.   5. The cooling block according to claim 1, wherein the cooling block is provided on a lower side of the holding arm, and at least part of the lower surface side of the holding arm is formed with unevenness to radiate heat. The vacuum processing apparatus as described in any one.

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