JP2010021416A5

JP2010021416A5 -

Info

Publication number: JP2010021416A5
Application number: JP2008181456A
Authority: JP
Filing date: 2008-07-11
Publication date: 2011-08-25

Claims

Forming an antireflection film on the main surface of the semiconductor substrate;
Forming a resist pattern on the antireflection film having an inclination such that the end of the pattern spreads toward the semiconductor substrate at an inclination angle of 2 ° or more and 5 ° or less at the pattern end ;
And a step of implanting ions into the main surface of the semiconductor substrate using the resist pattern as a mask.

Forming a resist pattern on the main surface of the semiconductor substrate;
Forming an organic material layer containing at least one of silicon and germanium around the resist pattern;
And a step of implanting ions into the main surface of the semiconductor substrate using the resist pattern and the organic material layer as a mask.

The step of forming the organic material layer includes
Forming an organic material containing at least one of silicon and germanium and curing by causing a thermal crosslinking reaction using an acid component in the resist pattern as a catalyst; and covering the resist pattern;
The method of manufacturing a semiconductor device according to claim 2 , further comprising: heat-treating the organic material in a portion in contact with the resist pattern to form the organic material layer around the resist pattern. Method.

Forming a resist pattern including one or more selected from the group consisting of silicon, germanium and a dye on the main surface of the semiconductor substrate;
And a step of implanting ions into the main surface of the semiconductor substrate using the resist pattern as a mask.

Forming a negatively charged resist pattern on the main surface of the semiconductor substrate;
And a step of implanting ions into the main surface of the semiconductor substrate using the resist pattern as a mask.

Step includes a step of irradiating the electron in the resist pattern, a method of manufacturing a semiconductor device according to claim 5 for forming the resist pattern is negatively charged.

Said ion, said injected into said main surface to form a well in a semiconductor substrate said main surface of the manufacturing method of the semiconductor device according to any one of claims 1-6.