JP2010041777A - 圧電振動子の保持装置 - Google Patents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/0005—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing non-specific motion; Details common to machines covered by H02N2/02 - H02N2/16
- H02N2/001—Driving devices, e.g. vibrators
- H02N2/003—Driving devices, e.g. vibrators using longitudinal or radial modes combined with bending modes
- H02N2/004—Rectangular vibrators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/0005—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing non-specific motion; Details common to machines covered by H02N2/02 - H02N2/16
- H02N2/005—Mechanical details, e.g. housings
- H02N2/0055—Supports for driving or driven bodies; Means for pressing driving body against driven body
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/202—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement
- H10N30/2023—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement having polygonal or rectangular shape
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Abstract
【解決手段】圧電振動子の保持装置において、圧電振動子1を離隔して収容する枠形または箱形の支持部材11と、この支持部材11の側部と圧電振動子1との間に介在される板ばね構造体12とを有し、この板ばね構造体12は、支持部材11の片側部に固着された基端部から圧電振動子1の対向両側部を挟むように圧電振動子の側部をまたいで折り返されて該圧電振動子に固着された第1の板ばね部材13と、支持部材11の他方の片側部に固着された基端部から圧電振動子1の対向両側部を挟むように圧電振動子1の側部をまたいで折り返されて該圧電振動子に固着された第2の板ばね部材18とを有し、第1の板ばね部材13と第2の板ばね部材18が圧電振動子1との固着部分で一体化されている。
【選択図】 図7
Description
本発明はさらに、圧電振動子に一定の加圧力を付与することができ、より、低コストでコンパクトな構造を有し、かつ、安定した出力を維持できる圧電振動子の保持装置を提供することにある。
また、本発明に係る圧電振動子は全体として棒状の形状を成し、かつその横断面が矩形状あるいは多角形状のもの、および横断面が円形状あるいは楕円形状のもの等いずれの形状のものにも適用可能である。
図2は第1実施形態の変形例1を示す側部断面図である。この例では、角柱状圧電振動子1の対向両側面にそれぞれ一対の平行な板ばね5,8が固着され、かつ、その固着位置は圧電振動子1の節部6(図3)の位置となっている。各々の板ばね5,8の圧電振動子1と反対側の板ばね端部5b,8bは支持部材3に接着固定される。4枚の板ばね5,8はともにその板面5a,8aが圧電振動子の加圧方向に向いており、また、これら4枚の板ばね5,8は互いに平行に配置されている。動作開始時に圧電振動子1の出力面1aの突部2を相手部材に圧接させるときは、図1(c)で説明した場合と同様に圧電振動子1が相手部材によって加圧方向と反対側へ若干押し込まれるように初期位置の設定がなされ、この位置で圧電振動子1の突部2と相手部材間に板ばね5,8のばね力による初期加圧力がかけられる。
上述の第2実施形態では、圧電振動子の1つの対向両側面に板ばねを固着した例を示したが、第2実施形態の変形例として圧電振動子の2つの対向両側面、即ち、4側面に同様の押し付け設定時に座屈状態となる板ばねを取り付けた構造とすることもできる。そして非線形ばね特性の荷重一定部分を利用することにより、被移動体や被加工物となる相手部材と圧電振動子との距離(振動子の加圧方向の接触位置)が或る領域で変化しても、加圧力を一定で作用させることができる。したがって、本発明の超音波モータや超音波加工機においては、相手部材に安定した摩擦力や加工力の作用を与えることができる。
第1の板ばね部材13は、支持部材11の一方の側壁11bに固着される幅広の基端部14を有する。この基端部14から圧電振動子1の対向両側部1dを挟むように一対の帯状部15が該側部1dをまたぐように伸長し、基端部14と反対側の圧電振動子1の側部位置でわん曲状に折り返えされてから、圧電振動子1の該両側部1dに固着されている。なお、この実施形態では一対の帯状部15の折り返えし部16が基端部14の反対側の圧電振動子1の側部1eに接して互いに一体に連結され、この部分(符号17の部分)でも前記側部1eに接着固定されている。
なお、第3実施形態においても、板ばね構造体は2個に限定されるものではなく、圧電振動子の大きさ、容量などにより、3個あるいはそれ以上の個数を設けてもよいことは勿論である。板ばね構造体も平板のプレス打抜き・折曲げ加工で容易に製作でき、小形、低コストの保持装置を実現できるなど、従来の構造では得られない種々の効果がもたらされる。
1a 出力面
3,11 支持部材
5,8,9,10 板ばね
6 圧電振動子の節部
7 相手部材
12 板ばね構造体
13 第1の板ばね部材
14,19 基端部
15,20 帯状部
16,21 折り返えし部
18 第2の板ばね部材
Claims (12)
- 圧電振動子の保持装置において、前記圧電振動子の側部に加圧方向に離隔した少なくとも2枚の板ばねの一端が固着され、前記板ばねの他端が支持部材に固定され、前記板ばねの板面が前記圧電振動子の加圧方向に向いていることを特徴とする圧電振動子の保持装置。
- 前記板ばねは、前記圧電振動子の振動変位の小さい節部分の位置で該圧電振動子に固着されることを特徴とする請求項1に記載の圧電振動子の保持装置。
- 前記板ばねは、各々の長さが互いに等しく、かつ互いに平行に配置されることを特徴とする請求項1または2に記載の圧電振動子の保持装置。
- 前記支持部材が前記板ばねによって前記圧電振動子の加圧方向に向けて弾性的に押圧されていることを特徴とする請求項1〜3に記載の圧電振動子の保持装置。
- 前記圧電振動子の対向両側部にそれぞれ少なくとも2枚の板ばねが固着されることを特徴とする請求項1〜4に記載の圧電振動子の保持装置。
- 圧電振動子の保持装置において、前記圧電振動子の対向両側部に、加圧方向に離隔した少なくとも2枚の板ばねの一端が固着され、前記板ばねの他端が支持部材に固定され、前記板ばねの板面は前記圧電振動子の前記両側部と直角な他方の側部を含む平面に対して垂直方向に向いており、前記圧電振動子の押し付け時に前記板ばねが座屈変形するように各々の前記板ばねの長さが、前記圧電振動子と前記支持部材との間の距離よりも長く形成されることを特徴とする圧電振動子の保持装置。
- 圧電振動子の保持装置において、前記圧電振動子を離隔して収容する枠形または箱形の支持部材と、前記支持部材の側部と前記圧電振動子との間に介在される板ばね構造体とを有し、
前記板ばね構造体は、前記支持部材の片側部に固着された基端部から前記圧電振動子の対向両側部を挟むように前記圧電振動子の前記側部をまたいで折り返されて該圧電振動子に固着された第1の板ばね部材と、前記支持部材の他方の片側部に固着された基端部から前記圧電振動子の前記対向両側部を挟むように前記圧電振動子の前記側部をまたいで折り返されて該圧電振動子に固着された第2の板ばね部材とを有し、前記第1の板ばね部材と前記第2の板ばね部材が前記圧電振動子との固着部分で一体化されていることを特徴とする圧電振動子の保持装置。 - 前記圧電振動子は、該圧電振動子の加圧方向に離隔した少なくとも2体の前記板ばね構造体によって前記支持部材に保持されることを特徴とする請求項7に記載の圧電振動子の保持装置。
- 前記板ばね構造体は、前記圧電振動子の振動変位の小さい節部分の位置で該圧電振動子と前記支持部材との間に介在されることを特徴とする請求項7または8に記載の圧電振動子の保持装置。
- 前記板ばね構造体は、全体として前記圧電振動子の加圧方向に向いた板面を有することを特徴とする請求項7〜9に記載の圧電振動子の保持装置。
- 前記圧電振動子は横断面が矩形ないし多角形となった棒状圧電振動子であることを特徴とする請求項1〜10に記載の圧電振動子の保持装置。
- 前記圧電振動子は横断面が円形ないし楕円形となった棒状圧電振動子であることを特徴とする請求項1〜10に記載の圧電振動子の保持装置。
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JP2008199643A JP4802313B2 (ja) | 2008-08-01 | 2008-08-01 | 圧電振動子の保持装置 |
PCT/JP2008/069777 WO2010013361A1 (ja) | 2008-08-01 | 2008-10-30 | 圧電振動子の保持装置 |
US13/056,889 US8531091B2 (en) | 2008-08-01 | 2008-10-30 | Apparatus for holding piezoelectric vibrator |
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---|---|---|---|---|
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11346486A (ja) * | 1998-06-01 | 1999-12-14 | Seiko Instruments Inc | 超音波モータ及び超音波モータ付電子機器 |
JP2007124840A (ja) * | 2005-10-28 | 2007-05-17 | Nsk Ltd | 圧電アクチュエータ |
JP2008032445A (ja) * | 2006-07-27 | 2008-02-14 | Sii Nanotechnology Inc | 圧電アクチュエータおよびそれを用いた走査型プローブ顕微鏡 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2722211B2 (ja) | 1988-07-30 | 1998-03-04 | 本多電子株式会社 | 超音波駆動装置 |
JP3311446B2 (ja) | 1993-11-30 | 2002-08-05 | オリンパス光学工業株式会社 | 超音波モータ |
DE19650900A1 (de) * | 1996-12-07 | 1998-06-10 | Bosch Gmbh Robert | Piezoelektrischer Aktuator |
JP4510179B2 (ja) | 1998-08-07 | 2010-07-21 | セイコーインスツル株式会社 | 超音波モータおよび超音波モータ付電子機器 |
JP3428484B2 (ja) * | 1999-02-25 | 2003-07-22 | 株式会社村田製作所 | 圧電部品の設計方法 |
JP2004297951A (ja) | 2003-03-27 | 2004-10-21 | Olympus Corp | 超音波振動子及び超音波モータ |
JP4641709B2 (ja) | 2003-08-12 | 2011-03-02 | セイコーインスツル株式会社 | 積層圧電振動体を用いた超音波モータおよびそれを用いた電子機器 |
DE10347774B4 (de) * | 2003-10-14 | 2006-04-13 | Siemens Ag | Aufnahmehülse für einen Aktorkörper |
JP2005214878A (ja) * | 2004-01-30 | 2005-08-11 | Sony Corp | 角速度センサ |
US7067964B1 (en) * | 2004-05-14 | 2006-06-27 | The United States Of America As Represented By The Secretary Of The Army | Piezoelectric resonator with reduced deformation sensitivity |
KR101159385B1 (ko) * | 2004-10-20 | 2012-07-03 | 교세라 가부시키가이샤 | 카메라 모듈, 및 이것을 구비한 휴대 단말 및 정보 단말 |
-
2008
- 2008-08-01 JP JP2008199643A patent/JP4802313B2/ja active Active
- 2008-10-30 WO PCT/JP2008/069777 patent/WO2010013361A1/ja active Application Filing
- 2008-10-30 US US13/056,889 patent/US8531091B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11346486A (ja) * | 1998-06-01 | 1999-12-14 | Seiko Instruments Inc | 超音波モータ及び超音波モータ付電子機器 |
JP2007124840A (ja) * | 2005-10-28 | 2007-05-17 | Nsk Ltd | 圧電アクチュエータ |
JP2008032445A (ja) * | 2006-07-27 | 2008-02-14 | Sii Nanotechnology Inc | 圧電アクチュエータおよびそれを用いた走査型プローブ顕微鏡 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130063471A (ko) * | 2011-12-06 | 2013-06-14 | 세이코 엡슨 가부시키가이샤 | 액튜에이터, 로봇 핸드, 로봇, 전자 부품 반송 장치, 전자 부품 검사 장치 및 프린터 |
JP2013121190A (ja) * | 2011-12-06 | 2013-06-17 | Seiko Epson Corp | アクチュエーター、ロボットハンド、ロボット、電子部品搬送装置、電子部品検査装置およびプリンター |
US9391257B2 (en) | 2011-12-06 | 2016-07-12 | Seiko Epson Corporation | Actuator, robot hand, robot, electronic component carrying device, electronic component inspection device, and printer |
JP2013236527A (ja) * | 2012-05-11 | 2013-11-21 | Seiko Epson Corp | 圧電モーター、ロボットハンド、ロボット、電子部品搬送装置、電子部品検査装置、送液ポンプ、印刷装置、電子時計、投影装置、搬送装置 |
JP2015186329A (ja) * | 2014-03-24 | 2015-10-22 | セイコーエプソン株式会社 | 圧電モーター |
JP2015186330A (ja) * | 2014-03-24 | 2015-10-22 | セイコーエプソン株式会社 | 圧電モーター |
JP2017514717A (ja) * | 2014-05-06 | 2017-06-08 | メムズ ドライブ, インク.Mems Drive, Inc. | 低スチフネス曲げ部 |
JP2015220911A (ja) * | 2014-05-20 | 2015-12-07 | キヤノン株式会社 | 超音波モータ |
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