JP2007098361A - Substrates processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus easily varying an angle of a substrate based on a horizontal plane when processing the substrate. <P>SOLUTION: A treatment space 38 is formed in a treatment tank 33. A substrate holding part 34, first and second washing solution spraying nozzles 41a, 41b, and first and second drying gas jetting nozzles 42a, 42b are positioned in the treatment space 38. The substrate holding part 34 holds a substrate 32 in the treatment space 38. The first and second washing solution spraying nozzles 41a, 41b spray the washing solution onto the substrate 32. The first and second drying gas jetting nozzles 42a, 42b jet the drying gas onto the substrate 32. An attitude changing means 37 changes the attitude of the treatment tank 33. As the attitude of the treatment tank 33 changes, the attitudes of the substrate holding part 34, respective nozzles 41a, 41b, 42a, 42b provided in the treatment space 38 change. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate, and more particularly to a substrate processing apparatus for processing a substrate by supplying a fluid to the substrate.

  FIG. 32 is a diagram schematically showing a configuration of a substrate cleaning apparatus 1 which is a conventional technique. FIG. 33 is a diagram schematically illustrating a configuration of the cleaning unit 2 constituting a part of the substrate cleaning apparatus 1 as viewed from the transport direction 3 of the substrate W. This conventional technique is disclosed in Patent Document 1. This conventional substrate cleaning apparatus 1 is an example of a substrate processing apparatus. The substrate cleaning apparatus 1 is used for cleaning a substrate W such as a semiconductor substrate. The substrate cleaning apparatus 1 is configured so that the substrate W can be cleaned by the plurality of cleaning units 2, 5 to 7 while the substrate W is transferred by the transfer roller 4 in the processing tank 10. The transport roller 4 transports the substrate W while being inclined with respect to the horizontal plane 8.

Japanese Patent Laid-Open No. 2004-74021

  In the conventional technique, if the posture of the substrate W when cleaning the substrate W is to be changed, it is necessary to change the position and posture of the transport mechanism such as the transport roller 4. If the position and orientation of the transport mechanism are changed to change the orientation of the substrate W, the positional relationship between the cleaning mechanism such as the cleaning units 2 to 7 and the substrate W changes. Need to change. Thus, it is necessary to adjust the position and posture of the transport mechanism and the position and posture of the cleaning mechanism, respectively. Therefore, there is a problem that adjustment work for changing the posture of the substrate W is difficult.

  An object of the present invention is to provide a substrate processing apparatus capable of facilitating adjustment work for changing the posture of a substrate when processing the substrate.

The present invention includes a treatment tank in which a treatment space is formed,
A substrate holding unit provided in the processing space, and holding the substrate in the processing space by the substrate holding unit;
A fluid supply unit having a fluid supply unit provided in the processing space, and supplying a processing fluid for processing the substrate from the fluid supply unit to the substrate held by the substrate holding unit;
An apparatus for processing a substrate, comprising: attitude changing means for changing the attitude of the processing tank.

In the present invention, the posture changing means is
A support that rotatably supports the processing tank around a rotation axis that extends horizontally through the center of gravity of the processing tank or near the center of gravity;
And a rotation drive source for rotating the processing tank about the rotation axis.

The present invention further includes moving means for moving the fluid supply unit along the substrate held by the substrate holding unit,
Transportation means
A movable body provided outside the treatment tank;
A movable body drive source that is provided outside the processing tank and drives the movable body to be displaced;
It is provided from the processing space to the outside of the processing tank, and has a connecting portion that connects the fluid supply portion and the movable body.

Further, in the invention, the fluid supply means includes a cleaning liquid ejecting means for ejecting a cleaning liquid for cleaning the substrate from a cleaning liquid ejecting section which is a fluid supply section.
The cleaning liquid spraying unit sprays the cleaning liquid from the cleaning liquid spraying unit onto the substrate in a processing state in which the posture of the processing tank is maintained so that the substrate held by the substrate holding unit forms a predetermined processing angle with respect to the horizontal plane. It is characterized by that.
The present invention is characterized in that the predetermined processing angle is selected from 5 degrees to 90 degrees.

  Further, the invention is characterized in that a plurality of cleaning liquid injection holes having a diameter of 10 μm or more and 200 μm or less are formed in the cleaning liquid injection part so as to be arranged in a straight line.

  Further, the invention is characterized in that the cleaning liquid ejecting portion is formed with cleaning liquid ejecting holes extending in a straight line and having an opening gap of 10 μm or more and 200 μm or less.

  Further, the invention is characterized in that the cleaning liquid ejecting unit ejects the cleaning liquid onto both surfaces of the substrate held by the substrate holding unit.

  Further, the present invention is characterized in that, in the processing state, a facing surface facing the substrate held by the substrate holding portion from the upper side among the inner surfaces of the processing tank is inclined with respect to a horizontal plane.

  In the invention, it is preferable that the fluid supply unit includes a drying gas injection unit that injects a drying gas for drying the substrate from a drying gas injection unit that is a fluid supply unit.

  In the present invention, the processing tank is formed with a substrate loading / unloading port for loading / unloading the substrate into / from the processing space.

  According to the present invention, a processing space is formed in the processing tank. In this processing space, a substrate holding part and a fluid supply part are provided. The substrate holding means has the substrate holding unit, and holds the substrate in the processing space by the substrate holding unit. The fluid supply means includes the fluid supply unit, and supplies a processing fluid for processing the substrate from the fluid supply unit to the substrate held by the substrate holding unit. Accordingly, the substrate can be processed in the processing space of the processing tank.

  The posture changing means changes the posture of the processing tank. When the posture of the processing tank changes, the positions and postures of the substrate holding unit and the fluid supply unit provided in the processing space of the processing tank also change. Therefore, the posture of the substrate when processing the substrate can be changed by changing the posture of the processing tank by the posture changing means.

  Since the substrate holding unit and the fluid supply unit are provided in the processing space of the processing tank, when the posture of the processing tank changes, the arrangement relationship between the substrate holding unit and the fluid supply unit is maintained constant, and the substrate holding unit The position and posture and the position and posture of the fluid supply unit change. Therefore, it is not necessary to adjust the position and posture of the substrate holding unit and the position and posture of the fluid supply unit, respectively, thereby facilitating adjustment work for changing the posture of the substrate when processing the substrate. .

  In addition, since it is not necessary to provide a mechanism for changing the posture of the substrate when processing the substrate in the processing space of the processing tank, the configuration in the processing space can be simplified and the processing tank can be downsized. can do. Furthermore, contamination of the processing space due to dust generation from the mechanism can be prevented, and contamination of the substrate processed in the processing space can be prevented.

  According to the present invention, the processing tank is supported by the support so as to be rotatable about the rotation axis, and the processing tank is rotated about the rotation axis by the rotation drive source. Since the rotation axis extends horizontally through or near the center of gravity of the processing tank, movement of the center of gravity of the processing tank when the processing tank rotates around the rotation axis can be reduced. Therefore, the processing tank can be rotated around the rotation axis with the smallest possible driving force.

  According to the invention, the fluid supply unit is coupled to the movable body by the coupling unit, and the movable body is driven to be displaced by the movable body drive source. As a result, the fluid supply unit can be moved along the substrate held by the substrate holding unit, and thus the range in which the processing fluid can be supplied can be increased.

  Since the movable body and the movable body drive source are provided outside the processing tank, the configuration in the processing space can be simplified and the processing tank can be downsized. Further, it is possible to prevent contamination of the processing space due to dust generated from the movable body and the movable body drive source, and it is possible to prevent contamination of the substrate processed in the processing space.

  According to the invention, the fluid supply means includes a cleaning liquid ejecting means. The cleaning liquid spraying unit sprays the cleaning liquid from the cleaning liquid spraying unit onto the substrate in a processing state in which the posture of the processing tank is maintained so that the substrate held by the substrate holding unit forms a predetermined processing angle with respect to the horizontal plane. . By injecting the cleaning liquid from the cleaning liquid injection unit onto the substrate in the processing state, it is possible to generate a one-way flow of the cleaning liquid along the substrate on the surface of the substrate. As a result, substrate contaminants adhering to the surface of the substrate can be peeled off. In addition, substrate contaminants adhering to the surface of the substrate are removed from the substrate surface by the cleaning liquid flowing in one direction, and then removed from the substrate by the flow of the cleaning solution. It does not reattach to the surface of the substrate.

  Further, according to the present invention, the predetermined processing angle is selected from 5 degrees to 90 degrees, so that the flow of the cleaning liquid in one direction on the surface of the substrate is further stabilized and the removal efficiency of the substrate contaminants is improved. Can do.

  According to the invention, a plurality of cleaning liquid injection holes are formed in the cleaning liquid injection unit. Each cleaning liquid injection hole has a diameter of 10 μm or more and 200 μm or less, extends in parallel to each other, and opens in alignment on a straight line. Since the cleaning liquid is ejected from each of the cleaning liquid ejection holes, the substrate can easily generate a downward flow of the cleaning liquid along the substrate on the surface of the substrate and adhere to the substrate surface. The removal efficiency can be improved.

  According to the invention, the cleaning liquid injection hole is formed in the cleaning liquid injection portion. The cleaning liquid ejection holes extend in a straight line and have an opening gap of 10 μm or more and 200 μm or less. Since the cleaning liquid is ejected from the cleaning liquid injection hole, the flow of the cleaning liquid in one direction along the substrate can be easily generated on the surface of the substrate, and the substrate contamination adhering to the surface of the substrate can be generated. Removal efficiency can be improved.

  Further, according to the present invention, the cleaning liquid ejecting unit ejects the cleaning liquid onto both surfaces of the substrate held by the substrate holding section, so that both surfaces of the substrate can be cleaned.

  According to the invention, a part of the inner surface of the processing tank faces the substrate held by the substrate holding unit from above in the processing state. The facing surface which is a part of the inner surface of the treatment tank is inclined with respect to a horizontal plane in the treatment state. Thus, when a droplet adheres to the facing surface, the droplet flows downward along the facing surface. Therefore, it is possible to prevent a problem that the droplets adhering to the facing surface fall on the substrate.

  According to the invention, the fluid supply means includes a drying gas injection means. The drying gas jetting unit jets a drying gas for drying the substrate from the drying gas jetting unit. By injecting the drying gas from the drying gas injection unit onto the substrate held by the substrate holding unit, the substrate can be dried in as short a time as possible to improve the productivity.

  According to the present invention, a substrate loading / unloading port is formed in the processing tank, and the substrate can be loaded into and unloaded from the processing space via the substrate loading / unloading port. As a result, the substrate before processing can be carried into the processing space, and the substrate after processing can be carried out of the processing space. Therefore, the substrate can be processed sequentially in the processing space.

  FIG. 1 is a perspective view showing a configuration of a substrate processing apparatus 31 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the substrate processing apparatus 31, FIG. 2 (a) shows a carry-in / out state, and FIG. 2 (b) shows a processing state. The substrate processing apparatus 31 according to the present embodiment is used for cleaning the substrate 32, and more specifically, is used for removing substrate contaminants attached to the surface of the substrate 32.

  The substrate 32 is, for example, a liquid crystal display device substrate. The substrate 32 is not limited to a liquid crystal display device substrate, and may be a plasma display substrate. The substrate 32 may be a printed circuit board or a semiconductor wafer. Although the shape of the board | substrate 32 is not limited, in this Embodiment, it demonstrates supposing that the shape seen from the thickness direction is a rectangular shape or square shape.

  The substrate contamination is one or more selected from fine particles, metal particles, metal compounds, and organic substances. The fine particles mean organic or inorganic dust generally called particles and having a particle size of 10 μm or less. A metal particle means the fine particle which is a lump containing metal atoms, such as a heavy metal and a noble metal, its ion, etc., for example. The metal compound means an oxide film, a natural oxide film, an oxide, etc. remaining on the surface of the substrate 32. The organic substance means wax, oil, resin, photoresist piece and the like.

  The substrate processing apparatus 31 includes a processing tank 33, a substrate holding unit 34 that is a substrate holding unit, a fluid supply unit 35, a moving unit 36, and an attitude changing unit 37. A treatment space 38 is formed in the treatment tank 33. In the processing space 38, the substrate 32 is held along a predetermined virtual plane 39. Hereinafter, the predetermined virtual plane 39 is referred to as a substrate holding surface 39. The substrate holding surface 39 has a certain arrangement relationship with the processing tank 33.

  For convenience of explanation, first to third directions X to Z are defined as follows. The first and second directions X and Y are directions parallel to the substrate holding surface 39 and are orthogonal to each other within the substrate holding surface 39. The third direction Z is a direction perpendicular to the substrate holding surface 39.

  The processing space 38 of the processing tank 33 is provided with a substrate holding part 34 and fluid supply parts 41 and 42 that constitute a part of the fluid supply means 35. The substrate holding unit 34 holds the substrate 32 along the substrate holding surface 39 in the processing space 38. The fluid supply units 41 and 42 supply a processing fluid for processing the substrate 32 to the substrate 32 held by the substrate holding unit 34. Therefore, the substrate 32 can be processed in the processing space 38 of the processing tank 33.

  The fluid supply unit 35 includes a cleaning liquid ejecting unit 43 that ejects a cleaning liquid for cleaning the substrate 32 as a processing fluid, and a drying gas ejecting unit 44 that ejects a drying gas for drying the substrate 32 as a processing fluid. Including.

  The cleaning liquid ejecting means 43 includes first and second cleaning liquid ejecting nozzles 41 a and 41 b as cleaning liquid ejecting sections that are fluid supply sections 41, and ejects the cleaning liquid from the nozzles 41 a and 41 b. The first cleaning liquid spray nozzle 41 a is provided on the Z1 side in the third direction with respect to the substrate holding surface 39, and sprays the cleaning liquid toward the substrate holding surface 39, whereby the substrate 32 held by the substrate holding part 34. The cleaning liquid can be jetted onto the surface on the Z1 side in the third direction. The second cleaning liquid injection nozzle 41b is provided on the other side Z2 side in the third direction with respect to the substrate holding surface 39, and injects the cleaning liquid toward the substrate holding surface 39, whereby the substrate 32 held by the substrate holding unit 34. The cleaning liquid can be sprayed onto the surface on the other Z2 side in the third direction. The first and second cleaning liquid spray nozzles 41 a and 41 b are provided so as to extend in the second direction Y. In the present embodiment, pure water is used as the cleaning liquid. The pure water preferably has a specific resistance value of 10 MΩcm or more, and particularly preferably 18 MΩcm or more (that is, ultrapure water).

  A cleaning liquid is supplied to the first and second cleaning liquid injection nozzles 41a and 41b through a cleaning liquid supply pipe (not shown) at a pressure of several MPa. This cleaning liquid is ejected from each nozzle 41a, 41b at an outlet speed of 30 m / s. The cleaning liquid supply pipe is provided with an open / close valve (not shown). The on-off valve can supply the cleaning liquid by opening the valve, and can prevent the supply of the cleaning liquid by closing the valve.

  The drying gas injection means 44 has first and second drying gas injection nozzles 42a and 42b as drying gas injection units which are fluid supply units 42, and injects drying gas from the nozzles 42a and 42b. . The first drying gas injection nozzle 42a is provided on the Z1 side in the third direction with respect to the substrate holding surface 39, and injects the cleaning liquid toward the substrate holding surface 39, whereby the substrate held by the substrate holding portion 34. The drying gas can be sprayed onto the surface on the Z1 side in the third direction of 32. The second drying gas injection nozzle 42b is provided on the other side Z2 side in the third direction with respect to the substrate holding surface 39, and injects the cleaning liquid toward the substrate holding surface 39, whereby the substrate held by the substrate holding part 34. The drying gas can be injected onto the surface of the other side 32 in the third direction Z2. The first and second drying gas injection nozzles 42 a and 42 b are provided to extend in the second direction Y. The first and second drying gas spray nozzles 42a and 42b are provided on the X1 side in the first direction with respect to the first and second cleaning liquid spray nozzles 41a and 41b. In the present embodiment, clean dry air or dry nitrogen gas whose relative humidity is adjusted to 0% to 50% is used as the drying gas. Here, the relative humidity means the proportion of water vapor actually contained with respect to the saturated water vapor amount.

  The compressed drying gas is supplied to the first and second drying gas injection nozzles 42a and 42b via a drying gas supply pipe (not shown). The drying gas is ejected from the nozzles 42a and 42b. The drying gas supply pipe is provided with an open / close valve (not shown). The on-off valve can allow the supply of the drying gas by opening the valve, and can prevent the supply of the drying gas by closing the valve.

  The moving means 36 includes a first moving means 36a for moving the first and second cleaning liquid jet nozzles 41a and 41b along the substrate 32 held by the substrate holding portion 34, and first and second drying gas jet nozzles. And a second moving unit 36b that moves the substrates 42a and 42b along the substrate 32 held by the substrate holding unit 34.

  The first moving means 36a is provided on both sides in the second direction Y with respect to the first and second cleaning liquid ejection nozzles 41a and 41b. Each first moving means 36 a is provided with a first movable body 45 provided outside the processing tank 33, a first movable body drive source provided outside the processing tank 33, which drives the first movable body 45 to be displaced, and a processing The first connection portion 47 is provided extending from the space 38 to the outside of the processing tank 33 and connects the first and second cleaning liquid spray nozzles 41 a and 41 b and the first movable body 45. The first movable body 45 is guided by a guide member 48 extending in the first direction X. By such first moving means 36a, the first and second cleaning liquid spray nozzles 41a and 41b can be moved in the first direction X, and therefore the range in which the cleaning liquid can be sprayed can be increased.

  The second moving means 36b is provided on both sides in the second direction Y with respect to the first and second drying gas injection nozzles 42a and 42b. Each of the second moving means 36b is provided with a second movable body 49 provided outside the processing tank 33, a second movable body drive source provided outside the processing tank 33 and driving the second movable body 49 to be displaced, and a process. A second connecting portion 51 is provided extending from the space 38 to the outside of the processing tank 33 and connects the first and second drying gas injection nozzles 42 a and 42 b and the second movable body 49. The second movable body 49 is guided by the guide member 48. By such second moving means 36b, the first and second drying gas nozzles 42a and 42b can be moved in the first direction X, and therefore the range in which the drying gas can be injected can be increased. .

  The posture changing means 37 includes a support body 52 that supports the processing tank 33 so as to be rotatable about a rotation axis L1 extending horizontally through the vicinity of the center of gravity of the processing tank 33, and the processing tank 33 about the rotation axis L1. And a rotation drive source 53 for rotation.

  The support body 52 includes a table 54, a rotation shaft 55 provided on the table 54, and a bearing member 56 that supports the rotation shaft 55 so as to be rotatable about the axis of the rotation shaft 55. The table 54 has a plate shape. The axis of the rotation shaft 55 is perpendicular to the thickness direction of the table 54. The bearing member 56 supports the rotation shaft 55 so that the axis of the rotation shaft 55 is horizontal. The bearing member 56 is fixed to a floor or the like. In the present embodiment, the table 54 has a rectangular or square shape when viewed in the thickness direction, and the rotation shaft 55 is provided at each of a pair of opposed edge portions of the table 54. Each rotation shaft 55 is coaxial.

  The processing tank 33 and the guide member 48 are fixed to the table 54. The processing tank 33 and the guide member 48 are provided on one side in the thickness direction of the table 54. The axis of the rotation shaft 55 is parallel to the second direction Y. The axis of the rotation shaft 55 passes near the center of gravity of the processing tank 33 fixed to the table 54. The axis of the rotation shaft 55 is the rotation axis L1.

  The rotation drive source 53 is provided on the other side in the thickness direction of the table 54. The rotation drive source 53 is realized by a double-action pneumatic cylinder. The rotation drive source 53 is not limited to a double-action pneumatic cylinder, and may be realized by a double-action hydraulic cylinder.

  The rotational drive source 53 includes a cylinder body 57 and a rod 58. The cylinder body 57 is connected to a floor or the like so as to be rotatable around a second rotation axis L2 extending in parallel to the rotation axis L1. One end of the rod 58 in the axial direction is connected to the table 54 so as to be rotatable around a third rotation axis L3 extending parallel to the rotation axis L1. The axis of the rod 58 is parallel to a virtual plane perpendicular to the rotation axis L1.

  In the present embodiment, one end portion of the rod 58 in the axial direction is connected to the end portion 59 on the X1 side in the first direction of the table 54. The cylinder body 57 is connected to a floor or the like so that the axis of the rod 58 is substantially vertical in a state where the table 54 is horizontal and the processing tank 33 is disposed above the table 54.

  When the rod 58 of the rotation drive source 53 extends, the table 54 rotates in one circumferential direction A1 around the rotation axis L1. In other words, the end portion 59 on the X1 side in the first direction of the table 54 is raised, and the end portion on the other X2 side in the first direction of the table 54 is lowered. When the rod 58 of the rotation drive source 53 is retracted, the table 54 rotates in the other circumferential direction A2 around the rotation axis L1. In other words, the end portion 59 on the X1 side in the first direction of the table 54 is lowered, and the end portion on the other X2 side in the first direction of the table 54 is raised. Thus, when the rod 58 of the rotation drive source 53 is extended or retracted, the table 54 rotates about the rotation axis L1.

  As the table 54 rotates about the rotation axis L1, the posture of the processing tank 33 fixed to the table 54 changes. In the present embodiment, the rotation drive source 53 changes the processing tank 33 over the carry-in / out state shown in FIG. 2A and the processing state shown in FIG. The carry-in / out state is a state when the substrate 32 is carried into / out of the processing space 38. In this loading / unloading state, the posture of the processing tank 33 is maintained so that the substrate holding surface 39 is parallel to the horizontal surface 60. The processing state is a state when the substrate 32 is processed in the processing space 38. In this processing state, the posture of the processing tank 33 is maintained so that the substrate holding surface 39 forms a predetermined processing angle θ1 with respect to the horizontal surface 60.

  In the carry-in / out state, the rod 58 of the rotational drive source 53 is retracted. From this state, when the rod 58 of the rotational drive source 53 extends a predetermined amount, the processing state is entered. Conversely, in the processing state, the rod 58 of the rotational drive source 53 is extended, and when the rod 58 of the rotational drive source 53 is retracted by a predetermined amount from this state, the loading / unloading state is established.

  FIG. 3 is a cross-sectional view of the processing tank 33. The processing tank 33 is a box shape. Referring also to FIG. 1, the processing tank 33 includes a bottom 61 fixed to the table 54, a cylindrical side 62 connected to the bottom 61, and an end of the side 62 opposite to the side connected to the bottom 61. And a processing space 38 is formed by these parts 61 to 63. Each part 61-63 of the processing tank 33 is plate-shaped. The bottom 61 is perpendicular to the third direction Z. The bottom 61 has a rectangular shape or a square shape when viewed from the thickness direction, one set of opposing edges is parallel to the first direction X, and the other set of opposing edges is the second direction Y. Parallel to The side part 62 continues to the bottom part 61 and extends in the third direction one Z1. The side portion 62 includes a first side plate portion 62a that is continuous with the edge portion on the X1 side in the first direction of the bottom portion 61, a second side plate portion 62b that is continuous with the edge portion on the other side X2 in the first direction of the bottom portion 61, It has the 3rd side board part 62c which continues to the edge part of the 2nd direction one Y1 side, and the 4th side board part 62d which continues to the edge part of the 2nd direction other Y2 side of the bottom part 61.

  The ceiling portion 63 is inclined in the other direction Z2 in the third direction as it proceeds in the other direction X2 in the first direction. The surface 63a facing the bottom 61 of the ceiling 63 becomes a facing surface that faces the substrate 32 held by the substrate holding unit 34 from above in the inner surface of the processing bath 33 in the processing state. A surface (hereinafter, referred to as “opposing surface”) 63 a facing the bottom 61 of the ceiling portion 63 is inclined with respect to the horizontal surface 60 in the treated state. Thus, when a droplet adheres to the facing surface 63a, the droplet flows downward along the facing surface 63a. Therefore, it is possible to prevent the problem that the droplets adhering to the facing surface 63a fall on the substrate 32.

  A substrate loading / unloading port 64 is formed in the processing tank 33. The substrate loading / unloading port 64 is formed in the first side plate portion 62a. The position of the substrate loading / unloading port 64 in the third direction Z is substantially the same as the substrate holding surface 39. The substrate 32 can be loaded into and unloaded from the processing space 38 through the substrate loading / unloading port 64. Accordingly, the substrate 32 before processing can be carried into the processing space 38, and the substrate 32 after processing can be carried out from the processing space 38. Therefore, the substrate 32 can be processed sequentially in the processing space 38. The substrate 32 before processing is the substrate 32 that has been processed in the previous process.

  A lid member 65 is provided at the substrate loading / unloading port 64. The lid member 65 can be switched between an open state in which the processing space 38 and a space outside the processing tank 33 (hereinafter referred to as “external space”) are opened and a closed state in which the lid member 65 is closed. When the lid member 65 is in the open state, the substrate 32 can be loaded into and unloaded from the processing space 38 via the substrate loading / unloading port 64. When the lid member 65 is in the closed state, it is possible to prevent a problem that dust or the like enters the processing space 38 from the external space through the substrate loading / unloading port 64, and cleaning liquid or the like from the processing space 38 through the substrate loading / unloading port 64. It is also possible to prevent the problem of leakage to the external space.

  The treatment tank 33 is further formed with an insertion hole 66 through which the first and second connecting portions 47 and 51 are inserted. The insertion hole 66 is formed in the third and fourth side plate portions 62c and 62d. The insertion hole 66 has a first direction so that the first and second connection parts 47 and 51 and the processing tank 33 do not interfere with each other even if the first and second connection parts 47 and 51 move in the first direction X. It is formed to extend to X.

  An air supply port 67 is further formed in the processing tank 33. The air supply port 67 is formed in the first side plate portion 62a. The air supply port 67 is disposed closer to the ceiling portion 63 than the substrate loading / unloading port 64. An air supply means 68 is provided at the air supply port 67. The air supply unit 68 includes a filter 69 interposed between the processing space 38 and the external space, and a blower 70 that supplies air in the external space to the processing space 38 through the filter 69. Particles of the air supplied by the blower 70 are removed by the filter 69 and supplied to the processing space 38. Therefore, clean air is supplied to the processing space 38 via the air supply port 67.

  First and second exhaust drainage ports 71 and 72 are further formed in the processing tank 33. The first and second exhaust drain ports 71 and 72 are formed in the second side plate portion 62b. The first exhaust drain port 71 is disposed closer to the ceiling 63 than the second exhaust drain port 72. The gas in the processing space 38 is discharged from the processing space 38 mainly through the first exhaust drain port 71. The liquid in the processing space 38 is discharged from the processing space 38 mainly through the second exhaust drain port 72.

  Clean air is supplied to the processing space 38 via the air supply port 67, and gas is discharged from the processing space 38 via the first and second exhaust drainage ports 71 and 72. As a result, in the processing space 38, an air flow 73 from the air supply port 67 toward the first and second exhaust drainage ports 71 and 72 can be generated. By generating such an air flow 73, the substrate contaminants peeled and removed from the surface of the substrate 32 and the mist of the cleaning liquid can be quickly discharged from the processing space 38 to keep the processing space 38 as clean as possible. . Therefore, redeposition of substrate contaminants and the like to the surface of the substrate 32 can be prevented.

  The air supply amount from the air supply port 67 and the exhaust amounts from the first and second exhaust drainage ports 71 and 72 are adjusted so that the pressure in the processing space 38 is higher than the pressure in the external space. Accordingly, it is possible to prevent a problem that dust or the like enters the processing space 38 from the external space through the insertion hole 66.

  The gas and liquid discharged from the first and second exhaust drainage ports 71 and 72 are supplied to the separation unit 75 via the telescopic pipe 74. The separation unit 75 is a unit for separating gas and liquid. The separation unit 75 includes a liquid storage tank 76 that stores liquid, a drainage pipe 77 that is connected to the lower part of the liquid storage tank 76, an on-off valve 78 that is provided in the drainage pipe 77, and an exhaust that is connected to the upper part of the liquid storage tank 76. It has a pipe 79 and a liquid separation wall 80 provided on the upper side in the liquid storage tank 76.

  The drainage pipe 77 is connected to a drainage facility (not shown). The on-off valve 78 allows the liquid to be discharged by opening the valve, and can prevent the liquid from being discharged by closing the valve. When the liquid stored in the liquid storage tank 76 reaches a predetermined amount, the on-off valve 78 switches from a state in which the valve is closed to a state in which the valve is opened, whereby the liquid stored in the liquid storage tank 76 is drained. It is fed to the drainage facility via the pipe 77. The on-off valve 78 switches from a state in which the valve is opened to a state in which the valve is closed after the liquid discharge is completed. The exhaust pipe 79 is connected to an exhaust facility (not shown). The liquid separation wall 80 allows only gas to pass through. The gas that has passed through the liquid separation wall 80 is sent to the exhaust facility via the exhaust pipe 79.

  FIG. 4 is a front view of the substrate holder 34. FIG. 5 is a side view seen from the direction of the arrow 81 in FIG. 6 is a side view seen from the direction of the arrow 82 in FIG. The substrate holding unit 34 includes a plurality of, for example, five holding portions 83. The holding portions 83 are provided at equal intervals in the second direction Y. Each holding portion 83 includes a frame 84, a support pin 85, and a positioning pin 86.

  The frame 84 has an extending portion 87 extending in the first direction X and a pair of legs that are bent and connected to both ends of the extending portion 87 and extend in the other direction Z2 and are fixed to the bottom 61 of the processing tank 33. And a portion 88. The extending portion 87 is provided at a predetermined distance D11 from the bottom 61 of the processing tank 33, whereby the second cleaning liquid injection nozzle 41b and the second cleaning liquid are disposed between the extending portion 87 and the bottom 61 of the processing tank 33. 2 Drying gas injection nozzle 42b can be inserted.

  A plurality of, for example, six support pins 85 are provided in the extending portion 87 at equal intervals in the first direction X. Each support pin 85 protrudes from the extending portion 87 in the third direction one Z1. The protrusion amount of each support pin 85 is the same. The tip of each support pin 85 is not a flat surface but a spherical shape or a conical shape with an R chamfer. In other words, the front end surface of each support pin 85 is a curved surface that curves outwardly (upward in FIG. 5). Therefore, the contact area between each support pin 85 and the substrate 32 can be made as small as possible. The tips of the support pins 85 are included in the substrate holding surface 39. With such support pins 85, the substrate 32 can be supported along the substrate holding surface 39.

  The extending portion 87 is provided with a positioning pin 86. The positioning pin 86 protrudes from the extending portion 87 in the third direction one Z1. The protruding amount of the positioning pin 86 is larger than the protruding amount of the support pin 85. The positioning pins 86 are provided such that the support pins 85 are arranged on the X1 side in the first direction of the positioning pins 86. The positioning pins 86 of the holding portions 83 have the same position in the first direction X. By such positioning pins 86, the substrate 32 can be positioned in the first direction X by preventing displacement of the substrate 32 in the other first direction X 2.

  FIG. 7 is a perspective view of the first cleaning liquid ejection nozzle 41a. FIG. 8 is a front view of the first cleaning liquid ejection nozzle 41a. The first cleaning liquid ejection nozzle 41a is a pressure-resistant nozzle having pressure resistance. A slit-like cleaning liquid injection hole 91 extending in a straight line is formed in the first cleaning liquid injection nozzle 41a, and the cleaning liquid 92 is injected in a thin film form from the cleaning liquid injection hole 91. In the present embodiment, the cleaning liquid injection hole 91 extends in the second direction Y. The cleaning liquid injection hole 91 has an injection width W1 that is a width in the second direction Y larger than the length of the substrate 32 in the second direction Y. Therefore, the cleaning liquid can be injected over the entire second direction Y of the substrate 32. . The opening gap D21 of the cleaning liquid ejection hole 91 is preferably 10 μm or more and 200 μm or less, and particularly preferably 10 μm to 100 μm. The opening gap D21 corresponds to the width in the direction perpendicular to the extending direction of the cleaning liquid injection hole 91. In the present embodiment, the opening gap D21 of the cleaning liquid ejection hole 91 is 15 μm.

  The first drying gas injection nozzle 42a is similar to the first cleaning liquid injection nozzle 41a. The first drying gas injection nozzle 42a has slit-shaped drying gas injection holes extending in a straight line, and the drying gas is injected from the drying gas injection holes. In the present embodiment, the drying gas injection hole extends in the second direction Y. The drying gas injection hole has an injection width, which is the width in the second direction Y, larger than the length of the substrate 32 in the second direction Y, and thus injects the drying gas over the entire second direction Y of the substrate 32. Can do.

  FIG. 9 is a front view showing a sprayed state of the cleaning liquid 93 sprayed from the second cleaning liquid spray nozzle 41b. The second cleaning liquid injection nozzle 41b is similar to the first cleaning liquid injection nozzle 41a shown in FIGS. 7 and 8, but differs in that a non-injection portion 94 that does not inject the cleaning liquid 93 is provided. The non-injection portion 94 is provided at substantially the same position as each holding portion 83 in the second direction Y. As a result, it is possible to prevent a problem that the cleaning liquid 93 sprayed from the second cleaning liquid spray nozzle 41 b scatters on the holding portions 83. Further, the cleaning liquid 93 sprayed from the second cleaning liquid spray nozzle 41b spreads on the surface of the substrate 32 on the other Z2 side in the third direction, so that the cleaning liquid 93 reaches the portion where the support pin 85 of the substrate 32 abuts. The part where 32 support pins 85 abut can also be cleaned.

  The second drying gas injection nozzle 42b is similar to the first drying gas injection nozzle 42a, but differs in that a non-injection portion that does not inject the drying gas is provided. The non-injection portion is provided at substantially the same position as each holding portion 83 in the second direction Y. As a result, it is possible to prevent the problem that the drying gas injected from the second drying gas injection nozzle 42b is disturbed and the substrate 32 is shaken. The drying gas sprayed from the second drying gas spray nozzle 42b spreads on the surface of the substrate 32 on the other Z2 side in the third direction, so that the drying gas reaches the portion of the substrate 32 where the support pin 85 contacts. Therefore, the portion of the substrate 32 where the support pins 85 abut can be quickly dried.

  10 to 12 are diagrams showing the positional relationship between the substrate holding unit 34 and the substrate 32 when the substrate 32 is placed on the substrate holding unit 34. FIG. A transfer robot is used to transfer the substrate 32. The transfer robot has an arm, and a comb-like hand 97 is provided at the tip of the arm. The hand 97 has a base portion 98 and a plurality of, for example, four extending portions 99 that extend in the same direction as the base portion 98. Each extending part 99 is provided at equal intervals. The width of each extending portion 99 is smaller than the distance between adjacent holding portions 83 of the substrate holding portion 34. In other words, each extending portion 99 is formed so that it can be gently inserted between the adjacent holding portions 83. Each extending part 99 is provided with a suction part 100, and a vacuum pump (not shown) is connected to the suction part 100. The substrate 32 mounted on the hand 97 is held by vacuum suction.

  In placing the substrate 32 on the substrate holding unit 34, the transfer robot holds the substrate 32 by the hand 97. At this time, the opposing edge portions of one set on the substrate 32 are parallel to the extending direction of the extending portion 99 of the hand 97.

  When the processing tank 33 is in the loading / unloading state and the lid member 65 is in the open state, the transfer robot processes the hand 97 via the substrate loading / unloading port 64 while holding the substrate 32 by the hand 97. Insert into the space 38. Then, the hand 97 is moved to a predetermined position above the substrate holding part 34 and stopped.

  When the hand 97 stops at a predetermined position, the extending direction of each extending portion 99 of the hand 97 is parallel to the first direction X. In addition, each extending portion 99 of the hand 97 is positioned between adjacent holding portions 83 of the substrate holding portion 34 in the second direction Y. A gap D <b> 31 is provided in the first direction X between the edge portion on the other side X <b> 2 in the first direction of the substrate 32 and each positioning pin 86 of the substrate holding portion 34.

  Next, the transfer robot releases the vacuum suction and moves the hand 97 downward, whereby the substrate 32 is supported by the support pins 85 of the substrate holder 34. At this time, as indicated by an imaginary line 101 in FIG. 11, the substrate 32 has a gap D <b> 31 in the first direction X between the edge portion on the other side X <b> 2 in the first direction and each positioning pin 86 of the substrate holding portion 34. Is placed on the substrate holding unit 34. The transfer robot moves the hand 97 further downward as indicated by a virtual line 102 in FIG. 11, and then moves the hand 97 out of the processing space 38.

  The gap D31 is provided to prevent a problem that the substrate 32 rides on the positioning pins 86 due to variations in the position of the substrate 32 with respect to the hand 97. The gap D31 is set according to the amount of variation. The gap D31 is about 1 to 2 mm.

  As described above, after the substrate 32 is placed on the substrate holder 34, the lid member 65 is closed. Thereafter, the rod 58 of the rotational drive source 53 is extended by a predetermined amount, whereby the processing tank 33 enters a processing state. While the processing tank 33 changes from the loading / unloading state to the processing state, the angle of the substrate 32 with respect to the horizontal surface 60 increases, and the substrate 32 moves to the other X2 in the first direction by its own weight and comes into contact with the positioning pin 86. . As a result, the substrate 32 is positioned in the first direction X.

  As described above, the tip of each support pin 85 that supports the substrate 32 has a conical shape with a spherical surface or an R chamfer. Accordingly, the substrate 32 can be smoothly moved in the other direction X2 in the first direction as compared with the case where the tip portions of the support pins 85 are flat.

  The rotation drive source 53 is controlled so that the rod 58 gradually extends. As a result, the substrate 32 moves slowly in the other direction X2 in the first direction, so that the impact force received from the positioning pins 86 when the substrate 32 collides with the positioning pins 86 can be reduced. Therefore, it is possible to prevent the substrate 32 from being cracked and chipped by the impact force.

  FIG. 13 is a diagram for explaining the cleaning / drying operation of the substrate processing apparatus 31. FIG. 14 is a diagram for explaining the cleaning / drying operation subsequent to FIG. 13 of the substrate processing apparatus 31. As described above, the cleaning / drying operation is started after the processing tank is changed from the loading / unloading state to the processing state with the substrate 32 placed on the substrate holding unit 34.

  When the cleaning / drying operation is started, as shown in FIG. 13A, the substrate 32 held by the substrate holder 34 forms a predetermined processing angle θ <b> 1 with respect to the horizontal plane 60. The first and second cleaning liquid spray nozzles 41a and 41b and the first and second drying gas spray nozzles 42a and 42b are waiting at a predetermined start position on the X1 side in the first direction with respect to the substrate 32. .

  When the cleaning / drying operation is started, first, the on-off valve provided in the cleaning liquid supply pipe is opened, and the spraying of the cleaning liquid from the first and second cleaning liquid spray nozzles 41a and 41b is started. When the cleaning liquid spray is stabilized, the first moving unit 36a moves the first and second cleaning liquid spray nozzles 41a and 41b to the other X2 in the first direction, as shown in FIG. 13B. Both surfaces of the substrate 32 are cleaned by the cleaning liquid sprayed from the first and second cleaning liquid spray nozzles 41a and 41b. The substrate 32 is cleaned from the edge portion on the X1 side in the first direction to the edge portion on the X2 side in the other direction in the first direction.

  After the cleaning to the edge portion on the other side X2 in the first direction of the substrate 32 is completed, the on-off valve provided in the cleaning liquid supply pipe is closed, and the spraying of the cleaning liquid from the first and second cleaning liquid spray nozzles 41a and 41b is stopped. The The first moving unit 36a moves the first and second cleaning liquid spray nozzles 41a and 41b to a predetermined stop position on the other X2 side in the first direction with respect to the substrate 32 and stops them.

  Thereafter, the on-off valve provided in the drying gas supply pipe is opened, and the injection of the drying gas from the first and second drying gas injection nozzles 42a and 42b is started. When the drying gas injection is stabilized, the second moving unit 36b moves the first and second drying gas injection nozzles 42a and 42b to the other X2 in the first direction, as shown in FIG. Both surfaces of the substrate 32 are dried by the drying gas sprayed from the first and second drying gas spray nozzles 42a and 42b. The substrate 32 is dried from the edge part on the X1 side in the first direction to the edge part on the X2 side in the first direction.

  After the drying to the edge of the other side X2 in the first direction of the substrate 32 is completed, the on-off valve provided in the drying gas supply pipe is closed, and the drying from the first and second drying gas jet nozzles 42a and 42b is performed. Gas injection is stopped. As shown in FIG. 14B, the second moving unit 36 b moves the first and second drying gas injection nozzles 42 a and 42 b to a predetermined stop position on the other X2 side in the first direction with respect to the substrate 32. The washing and drying operation is completed.

  After the cleaning / drying operation is completed, the rod 58 of the rotational drive source 53 is retracted by a predetermined amount, whereby the processing tank 33 is brought into the loading / unloading state. Thereafter, the lid member 65 is opened, and the substrate 32 is taken out of the processing space 38 by the transfer robot in a procedure reverse to the procedure described with reference to FIGS.

  FIG. 15 is a cross-sectional view showing the positional relationship between the first and second cleaning liquid jet nozzles 41 a and 41 b and the substrate 32. When the processing tank 33 is in the processing state, the cleaning liquid is sprayed from the first and second cleaning liquid spray nozzles 41 a and 41 b onto the substrate 32, thereby causing the cleaning liquid to flow downward in one direction along the substrate 32 on the surface of the substrate 32. Stream 109, 110 can be generated. Thereby, substrate contaminants adhering to the surface of the substrate 32 can be peeled and removed. In addition, substrate contaminants adhering to the surface of the substrate 32 are removed from the surface of the substrate 32 by the cleaning liquid flowing in one direction, and then removed from the substrate 32 by the flow of the cleaning solution. Objects do not reattach to the surface of the substrate 32.

  When the processing tank 33 is in the processing state, the substrate 32 forms a predetermined processing angle θ1 with respect to the horizontal plane 60. The predetermined processing angle θ1 is selected from 45 degrees to 75 degrees. In the case where the cleaning liquid is also sprayed onto the surface 111 facing the lower side of the substrate 32 as in the present embodiment, the cleaning liquid sprayed onto the lower facing surface 111 is reduced by gravity when the predetermined processing angle θ1 is less than 45 degrees. This makes it easy to fall and makes it difficult to form a flow in one direction of the cleaning liquid on the surface 111 facing downward. Further, when the substrate 32 is positioned and supported by the support pins 85 and the positioning pins 86 as in the present embodiment, the posture of the substrate 32 is unstable when the predetermined processing angle θ1 exceeds 75 degrees. become. When the predetermined processing angle θ1 exceeds 75 degrees, the weight of the substrate 32 is almost supported only by the positioning pins 86, so that the portion of the substrate 32 that comes into contact with the positioning pins 86 is separated from the positioning pins 86. A large reaction force acts, and cracks and chips may occur. In the present embodiment, the predetermined processing angle θ1 is 60 degrees.

  As described above, since the substrate 32 forms the predetermined processing angle θ1 with respect to the horizontal surface 60, the cleaning liquid sprayed from the first and second cleaning liquid spray nozzles 41a and 41b and colliding with the substrate 32 is applied to the surface of the substrate 32. It flows downward along the substrate 32 without staying and is discharged out of the substrate 32. Therefore, it is possible to prevent the liquid pool from being generated on the surface of the substrate 32.

  Since the occurrence of liquid pool can be prevented in this way, the flow rate of the cleaning liquid ejected from the first and second cleaning liquid ejection nozzles 41a and 41b is not attenuated by the liquid pool. Therefore, the flow rate of the cleaning liquid in the vicinity of the surface of the substrate 32 can be increased to increase the force acting on the particles, and the particles can be peeled and removed more effectively. Further, the particles peeled and removed from the surface of the substrate 32 are discharged out of the substrate 32 along with the flow of the cleaning liquid, so that the problem that the particles adhere to the surface of the substrate 32 again can be prevented.

  The first cleaning liquid ejection nozzle 41a is provided at a predetermined first distance D1 from the substrate 32. The predetermined first distance D1 corresponds to the length of a perpendicular line that is lowered from the cleaning liquid injection hole 91 of the first cleaning liquid injection nozzle 41a to the substrate 32. The predetermined first distance D1 is preferably 1 to 50 mm, more preferably 1 to 10 mm. If it is less than 1 mm or exceeds 50 mm, the flow of the cleaning liquid in one direction along the substrate 32 is not sufficiently generated on the surface in the third direction one Z1 side of the substrate 32, and the substrate contaminants are not sufficiently removed. There is a risk.

  The ejection direction 112 of the first cleaning liquid ejection nozzle 41a intersects the substrate 32 on the other X2 side in the first direction with respect to the first cleaning liquid ejection nozzle 41a. The injection direction 112 forms a predetermined first injection angle θ11 with respect to the substrate 32. In the present embodiment, the predetermined first injection angle θ11 is 45 degrees. By setting the first injection angle θ11 to 45 degrees, even if there is a liquid pool on the surface of the substrate 32, the flow rate of the cleaning liquid sprayed from the first cleaning liquid spray nozzle 41a to the vicinity of the surface of the substrate 32 is increased. And after the cleaning liquid collides with the substrate 32, the downward flow velocity of the cleaning liquid along the substrate 32 can be increased.

  The second cleaning liquid ejection nozzle 41b is provided at a predetermined second distance D2 from the substrate 32. The predetermined second distance D2 corresponds to the length of a perpendicular line that is lowered from the cleaning liquid injection hole of the second cleaning liquid injection nozzle 41b to the substrate 32. The predetermined second distance D2 is preferably 5 to 50 mm, more preferably 5 to 10 mm. If it is less than 5 mm, the extended portion 87 and the support pin 85 cannot be interposed between the second cleaning liquid spray nozzle 41 b and the substrate 32. On the other hand, if it exceeds 50 mm, the surface of the substrate 32 on the other side Z2 in the third direction may not generate sufficient flow of the cleaning liquid in one direction along the substrate 32, which may cause insufficient removal of substrate contaminants. There is.

  The ejection direction 113 of the second cleaning liquid ejection nozzle 41b intersects the substrate 32 on the other X2 side in the first direction with respect to the second cleaning liquid ejection nozzle 41b. The injection direction 113 forms a predetermined second injection angle θ12 with respect to the substrate 32. In the present embodiment, the predetermined second injection angle θ12 is 45 degrees. By setting the second spray angle θ12 to 45 degrees, even if there is a liquid pool on the surface of the substrate 32, the flow rate of the cleaning liquid sprayed from the second cleaning liquid spray nozzle 41b to the vicinity of the surface of the substrate 32 is increased. And after the cleaning liquid collides with the substrate 32, the downward flow velocity of the cleaning liquid along the substrate 32 can be increased.

  FIG. 16 is a cross-sectional view showing the flow of the cleaning liquid. FIG. 16A shows the case where the liquid film 114 has the first thickness T1, and FIG. 16B shows the case where the liquid film 114 has the first thickness T1. The case where it has 2nd thickness T2 smaller than this is shown. In FIG. 16, the arrows indicate the flow of the cleaning liquid, and the lengths of the arrows indicate the flow rate of the cleaning liquid. The longer the arrow, the higher the flow velocity.

  Particles 115 having a particle size of 10 μm or less may adhere to the surface of the substrate 32. In order to peel and remove such particles 115, it is necessary to increase the force acting on the particles 115 by increasing the flow rate of the cleaning liquid in the very vicinity of the surface of the substrate 32.

  The flow rate of the cleaning liquid decreases as it approaches the surface of the substrate 32. The flow rate of the cleaning liquid in the very vicinity of the surface of the substrate 32 varies depending on the thickness of the liquid film 114. More specifically, when the flow rate of the cleaning liquid on the surface of the liquid film 114 is the same, as shown in FIGS. 16A and 16B, the smaller the thickness of the liquid film 114, the more the substrate 32 has. The flow rate of the cleaning liquid near the surface is increased.

  In consideration of this point, in the present embodiment, the cleaning liquid is ejected from the slit-shaped cleaning liquid ejection holes 91 having the opening gap of 15 μm, thereby reducing the thickness of the liquid film 114. By reducing the thickness of the liquid film 114 in this manner, the flow rate of the cleaning liquid in the very vicinity of the surface of the substrate 32 can be increased, the force acting on the particles 115 can be increased, and the removal efficiency of the particles 115 is improved. Can be made.

  Therefore, a high cleaning power can be exhibited only by the flow of the cleaning liquid. Moreover, it is possible to remove not only fine particles but also metal particles, metal compounds, organic substances and the like by using only pure water as a cleaning liquid without using several kinds of chemicals. Therefore, it does not require a plurality of medicine tanks and equipment for processing the medicine after use, and does not require complicated operations such as replacement of medicines in a single medicine tank. Further, it is not necessary to perform multi-stage cleaning using a plurality of pure water discharge devices.

  FIG. 17 is a cross-sectional view of the processing tank 33. FIG. 17A shows a case where the ceiling 63 is parallel to the substrate holding surface 39, and FIG. FIG. 17B shows a case where the ceiling portion 63 inclines in the other direction Z2 in the third direction as it proceeds to the other X2 in the first direction.

  As shown in FIG. 17A, when the ceiling portion 63 is parallel to the substrate holding surface 39, the opposing surface 63a is inclined with respect to the horizontal plane 60 in the processing state indicated by the imaginary line 121. The droplets adhering to the liquid flow downward along the facing surface 63a. Therefore, it is possible to prevent the problem that the droplets adhering to the facing surface 63a fall on the substrate 32. However, in the carry-in / out state indicated by the solid line, the opposing surface 63a is parallel to the horizontal plane, so that the liquid droplets 124 adhering to the opposing surface 63a cannot flow downward along the opposing surface 63a, It will fall.

  As shown in FIG. 17B, when the ceiling 63 inclines in the third direction one Z1 as it proceeds in the first direction other X2, in the processing state indicated by the virtual line 122, the angle of the facing surface 63a with respect to the horizontal plane 60 is Since the droplets are small, the droplets adhering to the facing surface 63a cannot sufficiently flow downward along the facing surface 63a and fall on the substrate 32. Further, in the middle of the change from the processing state to the carry-in / out state, the opposing surface 63a becomes parallel to the horizontal surface 60, so that the droplets 124 adhering to the opposing surface 63a can flow downward along the opposing surface 63a. Disappears and falls onto the substrate 32.

  As illustrated in FIG. 17C, when the ceiling portion 63 is inclined in the other direction Z <b> 2 in the third direction X <b> 2 as it proceeds in the first direction other X <b> 2, in the processing state indicated by the virtual line 123, the facing surface 63 a Since it inclines, the droplet adhering to the opposing surface 63a flows downward along the opposing surface 63a. Therefore, it is possible to prevent the problem that the droplets adhering to the facing surface 63a fall on the substrate 32. Moreover, since the angle of the facing surface 63a with respect to the horizontal surface 60 is larger than in the case shown in FIG. 17 (a), the droplets adhering to the facing surface 63a can easily flow downward along the facing surface 63a, and thus more reliably. , It is possible to prevent the above problems. Further, even during the transition from the processing state to the loading / unloading state and in the loading / unloading state indicated by the solid line, the facing surface 63a is inclined with respect to the horizontal surface 60, so that the droplets 124 adhering to the facing surface 63a follow the facing surface 63a. Flow downward. Accordingly, it is possible to prevent a problem that the liquid droplet 124 attached to the facing surface 63a falls on the substrate 32.

  In consideration of these points, in the present embodiment, the processing tank 33 is configured as shown in FIG. As a result, it is possible to prevent a problem that the droplet 124 adhering to the facing surface 63a falls on the substrate 32. Therefore, the problem that the substrate contaminants are reattached to the treated substrate 32 due to the droplet 124 dropping. Can be prevented.

  According to the present embodiment as described above, the posture changing means 37 changes the posture of the processing tank 33. When the attitude of the processing tank 33 changes, the attitudes of the substrate holder 34 and the nozzles 41a, 41b, 42a, 42b provided in the processing space 38 of the processing tank 33 also change. Therefore, by changing the posture of the processing tank 33 by the posture changing means 37, the posture of the substrate 32 when processing the substrate 32 can be changed.

  Since the substrate holding part 34 and the nozzles 41a, 41b, 42a, 42b are provided in the processing space 38 of the processing tank 33, if the posture of the processing tank 33 changes, the substrate holding part 34 and the nozzles 41a, 41b, 42a, The position and posture of the substrate holding part 34 and the positions and postures of the nozzles 41a, 41b, 42a, and 42b change while the positional relationship with 42b is kept constant. Therefore, it is not necessary to adjust the position and posture of the substrate holding part 34 and the positions and postures of the nozzles 41a, 41b, 42a, 42b, respectively, thereby changing the posture of the substrate 32 when processing the substrate 32. Adjustment work can be facilitated.

  Further, since it is not necessary to provide a mechanism for adjusting the posture of the substrate 32 in the processing space 38 of the processing tank 33, the configuration in the processing space 38 can be simplified and the processing tank 33 can be downsized. be able to. Furthermore, contamination of the processing space 38 due to dust generation from the mechanism can be prevented, and contamination of the substrate 32 that is cleaned and dried in the processing space 38 can be prevented.

  Further, the processing tank 33 is rotatably supported around the rotation axis L1 by the support 52, and the processing tank 33 is rotated about the rotation axis L1 by the rotation drive source 53. Since the rotation axis L1 extends horizontally through the vicinity of the center of gravity of the processing tank 33, the movement of the center of gravity of the processing tank 33 when the processing tank 33 rotates about the rotation axis L1 can be reduced. . Therefore, the processing tank 33 can be rotated around the rotation axis L1 with the smallest possible driving force.

  Further, the first movable body 45 and the first movable body drive source that constitute a part of the first moving means 36a are provided outside the processing tank 33, and the second movable body that constitutes a part of the second moving means 36b. 49 and the second movable body drive source are provided outside the processing tank 33. Therefore, the configuration in the processing space 38 can be simplified, and the processing tank 33 can be downsized. Further, contamination of the processing space 38 due to dust generation from the first and second movable bodies 45 and 49 and the first and second movable body drive sources can be prevented, and the substrate 32 to be cleaned and dried in the processing space 38 can be prevented. Contamination can be prevented.

  Further, since the cleaning liquid ejecting means 43 simultaneously ejects the cleaning liquid onto both surfaces of the substrate 32 held by the substrate holding part 34, both surfaces of the substrate 32 can be cleaned simultaneously. Therefore, the time required for cleaning the substrate 32 can be shortened, and productivity can be improved.

  Further, after the substrate 32 is washed, the substrate 32 is dried in the shortest possible time by jetting the drying gas onto the substrate 32 from the first and second drying gas jet nozzles 42a and 42b, thereby improving productivity. Can be made.

  Furthermore, since the substrate processing apparatus 31 can execute the cleaning process and the drying process alone, it is not necessary to transfer the substrate from the substrate cleaning apparatus to the substrate drying apparatus between the cleaning process and the drying process, and it is as short as possible. Over time, the substrate can be cleaned and dried, and productivity can be improved.

  FIG. 18 is a perspective view of a first cleaning liquid injection nozzle 131 provided in a substrate processing apparatus according to another embodiment of the present invention. FIG. 19 is a front view of the first cleaning liquid spray nozzle 131. Since the substrate processing apparatus of this embodiment is similar to the substrate processing apparatus 31 of the above-described embodiment, the description of the same parts is omitted.

  The first cleaning liquid ejection nozzle 131 is a pressure-resistant nozzle having pressure resistance. The first cleaning liquid injection nozzle 131 is formed with a plurality of minute circular cleaning liquid injection holes 132 arranged in a straight line, and the cleaning liquid 133 is injected from each of the cleaning liquid injection holes 132. The arrangement of the plurality of cleaning liquid ejection holes 132 in a straight line means that the plurality of cleaning liquid ejection holes 132 extend in parallel with each other and are aligned and opened. In the present embodiment, the cleaning liquid ejection holes 132 are arranged in the second direction Y. The ejection width W2 is larger than the length of the substrate 32 in the second direction Y. Therefore, the cleaning liquid can be ejected over the entire second direction Y of the substrate 32. In the first cleaning liquid injection nozzle 131 of the present embodiment, the injection width W2 is the distance between the cleaning liquid injection hole 132 closest to the Y1 in the second direction and the cleaning liquid injection hole 132 closest to the other Y2 in the second direction. Equivalent to. Each cleaning liquid injection hole 132 has a diameter D41 of 10 μm or more and 200 μm or less, and is 20 μm in the present embodiment. In the present embodiment, the center distance D42 of each cleaning liquid ejection hole 132 is 60 μm.

  The cleaning liquid is supplied to the first cleaning liquid injection nozzle 131 at a pressure of several MPa through the cleaning liquid supply pipe. This cleaning liquid is ejected from each cleaning liquid ejection hole 132 of the first cleaning liquid ejection nozzle 131 at an outlet speed of 30 m / s. Although the cleaning liquid is ejected from each of the cleaning liquid injection holes 132 in a columnar shape at equal intervals in the second direction Y, the cleaning liquid collides with the substrate 32 and expands. Can be washed.

  According to the present embodiment, the cleaning liquid is ejected from the plurality of cleaning liquid ejection holes 91 having a diameter of 20 μm, thereby reducing the thickness of the liquid film. By reducing the thickness of the liquid film in this way, the flow rate of the cleaning liquid in the very vicinity of the surface of the substrate 32 can be increased and the force acting on the particles can be increased, as in the previous embodiment. Particle removal efficiency can be improved.

  In the first cleaning liquid injection nozzle 131 of the present embodiment, the flow rate of the cleaning liquid required at the same outlet speed and the injection widths W1 and W2 is about 0.35 times that of the first cleaning liquid injection nozzle 41a of the previous embodiment. It becomes. By reducing the flow rate of the cleaning liquid in this way, the flow rate of the cleaning liquid in the very vicinity of the surface of the substrate 32 can be further increased, the force acting on the particles can be further increased, and the particle removal efficiency can be further improved. be able to.

  Each of the embodiments described above is merely an example of the present invention, and the configuration can be changed within the scope of the present invention. For example, the rotation axis L1 may pass through the center of gravity of the processing tank 33, and the movement of the center of gravity of the processing tank 33 when the processing tank 33 rotates around the rotation axis L1 may be eliminated. Thereby, the driving force for rotating the processing tank 33 around the rotation axis L1 can be further reduced.

  In each of the above-described embodiments, the substrate 32 is supported by the support pins 85, but the substrate 32 may be supported in a non-contact manner by ejecting a fluid from the porous member. In this case, the substrate holding means is configured to include a porous member that is a substrate holding portion, a fluid supply source that supplies a fluid to the porous member, and a fluid supply pipe that forms a fluid flow path. While the cleaning liquid is sprayed from the first and second cleaning liquid spray nozzles 41a and 41b to clean the substrate 32, the cleaning liquid is sprayed from the porous member, and subsequently from the first and second cleaning liquid spray nozzles 42a and 42b. While the drying gas is jetted to dry the substrate 32, the drying gas is jetted from the porous member. Thereby, the surface on the other side Z2 side in the third direction of the substrate 32 can be more reliably cleaned and dried.

  Further, when the substrate holding means is configured so that the substrate 32 can be stably held even if the angle of the substrate 32 with respect to the horizontal plane 60 exceeds 75 degrees, the predetermined processing angle is 5 degrees or more and 90 degrees or less. May be chosen. As an example, the substrate holding means includes a substrate holding part having a suction part and a vacuum pump connected to the suction part. By selecting the predetermined processing angle to be not less than 5 degrees and not more than 90 degrees, the flow of the cleaning liquid in one direction on the surface of the substrate 32 is further stabilized, and the substrate contaminant removal efficiency can be improved.

  Furthermore, the cleaning liquid is not limited to pure water, and may contain an active component of a substrate cleaning chemical such as hydrogen or ammonia.

  Hereinafter, a substrate cleaning apparatus 225 as a substrate processing apparatus according to still another embodiment of the present invention and a substrate cleaning method using the substrate cleaning apparatus 225 will be described. The substrate cleaning apparatus 225 of the present embodiment is similar to the substrate processing apparatus 31 of each of the above-described embodiments. The substrate cleaning apparatus 225 of this embodiment includes posture changing means similar to the posture changing means 37 provided in the substrate processing apparatus 31 of each of the above-described embodiments. The posture of the processing tank can be changed by this posture changing means.

  FIG. 20 is a side view for explaining the substrate cleaning method. FIG. 21 is a perspective view for explaining the substrate cleaning method. The substrate 201 is held in an inclined posture at an inclination angle θ21 with respect to the horizontal plane 202 by a substrate holding means (not shown). Here, the inclination angle θ21 of the substrate 201 is preferably 5 to 90 °, more preferably 75 to 90 °. If the angle is less than 5 ° or exceeds 90 °, a unidirectional flow from the upper part to the lower part of the pure water constituting the liquid film 207 does not sufficiently occur on the surface to be cleaned 1 of the substrate 201, and substrate contamination Removal may be insufficient.

  A pure water injection means 203 is provided facing the surface to be cleaned 201a of the substrate 201 with a gap d1. The pure water injection means 203 has a pressure-resistant structure (not shown) inside, and pure water in a state of being pressed against the surface to be cleaned 201 a of the substrate 201 (hereinafter referred to as “pressurized pure water”). ), And a pressure-resistant pipe 206 for supplying pressurized pure water to the pressure-resistant nozzle 204, and a pure water pressure supply means (not shown). In the present embodiment, pure water corresponds to a cleaning liquid as a processing fluid, and pure water ejecting means 203 corresponds to a cleaning liquid ejecting means as a fluid supply means.

  Note that the alignment direction of the surface to be cleaned 201a and the injection holes 205 is preferably substantially parallel. Here, when the alignment direction of the surface to be cleaned 201a and the injection hole 205 is substantially parallel, the interval d1 is the length of the perpendicular from the injection hole 205 to the surface to be cleaned 201a, preferably 1 to 50 mm, More preferably, it is 1-10 mm. If the thickness is less than 1 mm or exceeds 50 mm, the surface 201a to be cleaned of the substrate 201 does not sufficiently generate a unidirectional flow from the upper part to the lower part of the pure water constituting the liquid film 207, thereby removing substrate contaminants. May be insufficient.

  The pure water injected from the pure water injection means 203 preferably has a specific resistance value of 10 MΩcm or more, and particularly preferably 18 MΩcm or more (ie, ultrapure water). Moreover, the pure water can contain the active ingredient of the conventional chemical | medical solution for board | substrate cleanings, such as hydrogen and ammonia, in the range which does not impair the preferable advantage of the board | substrate cleaning method of this Embodiment.

  As the pressure-resistant nozzle 204, a circular pressure hole 205 having a diameter of 200 μm or more, and a plurality of pressure holes 205 arranged in a line on a straight line can be used. A pressure-resistant slit nozzle in which the injection hole 205 is formed in a slit shape and the slit opening gap is 200 μm or less can also be used. The pressure-resistant piping 206 is made of a material having pressure resistance and flexibility, and is provided so as to be movable in the vertical and horizontal directions. The pure water pressurizing supply means (not shown) includes, for example, a pure water storage tank for storing pure water produced by a pure water production apparatus, and a pressure supply pipe 206 that supplies the pure water in the pure water storage tank while pressurizing the pure water. And a pressure pump.

  The pure water ejecting means 203 is supported by a moving means (not shown) so as to be movable up and down along the surface to be cleaned 201a while maintaining the interval d1. In the substrate cleaning method of the present embodiment, on the surface to be cleaned 201a of the substrate 201, the high-pressure region shown in FIG. 25 is located in the liquid film 207 near the point where the pure water jetted from the pure water jetting means 203 arrives. 216 occurs. The liquid film region 208 below the lower end of the high-pressure region 216 (hereinafter referred to as “cleaning execution region 208”) is a region having particularly high cleaning power. The cleaning execution region 208 can be moved on the surface to be cleaned 201a by moving the pure water injection means 203 up and down, preferably moving from the upper part to the lower part. Can be washed.

  In order to efficiently perform substrate cleaning, the cleaning execution region 208 is preferably at least 0 to 5 cm, more preferably 0 to 10 cm from the lower end of the high-pressure region 216. For this purpose, various conditions such as the inclination angle θ21 of the substrate 201, the specific resistance value of pure water used as the cleaning liquid, and the spray pressure on the surface to be cleaned 201a may be appropriately changed.

  Further, when the pure water ejected from the pure water ejecting means 203 reaches the surface to be cleaned 201a while maintaining a linear trajectory instead of a parabolic shape, an angle θ22 formed by the pure water trajectory and the substrate 201 is formed. Is preferably an acute angle. This reduces the thickness of the liquid film 207 generated on the surface to be cleaned 201a when the pure water to be sprayed collides with the surface to be cleaned 201a, and the liquid film has a small film thickness that is effective for removing substrate contaminants. 207 is easily formed, and it becomes easier to generate a unidirectional flow from the upper part to the lower part of the pure water constituting the liquid film 207 on the surface to be cleaned 201a. The thickness of the liquid film 207 will be described later.

  As shown in FIGS. 20 and 21, the surface to be cleaned 201 a of the substrate 201 that is held in an inclined posture so as to form an angle θ21 with respect to the horizontal surface 202 is spaced apart from the surface to be cleaned 201 a of the substrate 201 by a distance d <b> 1. When ultrapure water is ejected from the ejection hole 205 of the pressure-resistant nozzle 204 of the disposed pure water ejection means 203, a liquid film 207 is generated on the surface to be cleaned 201a, and the pure water constituting the liquid film 207 is Then, the flow in one direction from the upper part to the lower part of the surface 201a to be cleaned flows over the surface 201a to be cleaned, and substrate contaminants (not shown) adhering to the surface 201a to be cleaned are peeled off.

  FIG. 22 is a cross-sectional view schematically showing the state of the liquid film flow in the cleaning execution region 208. FIG. 23 is a cross-sectional view schematically showing a mechanism for removing fine particles in the cleaning execution region 208. Note that ultrapure water is preferably used as pure water for the removal of fine particles, and FIG. 23 relates to the removal of fine particles. Therefore, in the description of FIGS. 22 and 23, ultrapure water is used as pure water. Hereinafter, in the same manner, in the explanation regarding the removal of the fine particles, ultrapure water is used.

  In FIG. 22, an arrow means a liquid flow in the liquid film 207, and a length of the arrow means a liquid flow velocity. The longer the arrow, the higher the flow velocity. In addition, the cleaning execution area 208 is further divided into four first to fourth small areas 209, 210, 211, and 212. Between the small areas, gaps having the same length based on the liquid film surface 207a are provided. Provide. Furthermore, in the four first to fourth small regions 209, 210, 211, and 212, lines connecting the vertices of the arrows indicating the liquid flow are defined as first to fourth flow velocity lines 209x, 210x, 211x, and 212x.

  In the cleaning execution region 208, in the first small region 209, which is directly below the point where the ultrapure water ejected from the pure water ejecting means 203 arrives, the liquid flow 209a in the vicinity of the surface to be cleaned 201a, the thickness direction of the liquid film 207 The liquid flows 209b, 209c, 209d in the central portion of the liquid flow and the liquid flow 209e in the vicinity of the liquid film surface 207a all have substantially the same flow velocity, and a substantially linear flow velocity line 209x is obtained. Although the liquid flows 209a to 209e flow downward as they are, the liquid flow 209a to 209e receives a shearing force from the surface to be cleaned 201a due to the viscosity of ultrapure water, and the flow velocity is reduced as the surface is closer to the surface to be cleaned 201a. Therefore, in the second small region 210 assumed downstream of the first small region 209 in the liquid film flow direction, the liquid flow 210a flowing near the surface to be cleaned 201a is decelerated, and the liquid flow 210b is slightly increased. Will be slowed down. On the other hand, the other liquid flows 210c, 210d, and 210e located at positions relatively away from the surface to be cleaned 201a are hardly decelerated, and the second flow velocity line 210x has a parabolic shape.

  Further, in the third small region 211, the tendency of the liquid flow to be decelerated due to the shearing force in the vicinity of the surface to be cleaned 201a becomes more prominent, and the liquid flow 211a closest to the surface to be cleaned 201a is the first flow velocity (liquid level) in the cleaning execution region 208. The liquid flows 211b to 211d are also decelerated according to the distance from the surface to be cleaned 201a, and only the liquid flow 211e in the vicinity of the liquid flow surface 207a is not decelerated. As a result, the third flow velocity line 211x has a parabolic shape with a curved portion having a larger curvature than the second flow velocity line 210x, and the liquid flow velocity may vary greatly depending on the position in the thickness direction of the liquid film 207. I understand.

  In the fourth small region 212 assumed at the lowermost part in the cleaning execution region 208, the liquid flow 212a closest to the surface to be cleaned 201a is further decelerated and becomes almost “0”. Although the liquid flows 212b to 212d are also decelerated, the liquid flow 212e flowing through the position farthest away from the surface to be cleaned 201a is hardly decelerated. The obtained fourth flow velocity line 212x has a parabolic shape with a larger curvature, but in the cleaning execution region 208, the liquid flow in the vicinity of the liquid film surface 207a is almost subjected to shearing force due to contact with the surface to be cleaned 201a. And keep approximately the same flow rate. This liquid flow in the vicinity of the liquid film surface 207a is very effective in preventing re-adhesion of substrate contaminants (not shown) that peel from the surface to be cleaned 201a.

  Of the first to fourth flow velocity lines 209x to 212x obtained in the first to fourth small regions 209 to 212, the liquid flow having the first to third flow velocity lines 209x to 211x adheres to the surface to be cleaned 201a. It is particularly effective for removing contaminants. That is, as shown in FIG. 23, the fine particles 213a adhering to the surface to be cleaned 201a are separated from the surface to be cleaned 201a due to the stress 214 due to the liquid flows 209a and 209b in the vicinity of the surface to be cleaned 201a, and float. The fine particles 213b flow around the cleaning surface 201a. The fine particles 213b are further subjected to stress due to the liquid flows 209b to 209e, particularly the liquid flow 209e, and further float in the liquid film 207 toward the liquid film surface 207a, and become fine particles 213c flowing near the liquid film surface 207a. It is discharged outside the substrate 201.

  Next, in the substrate cleaning method of the present embodiment, when removing fine particles from the surface to be cleaned 201a of the substrate 201, the thickness of the liquid film generated when spraying ultrapure water onto the surface to be cleaned 201a is used to remove the fine particles. The effect will be described with reference to FIGS. FIG. 24 is a cross-sectional view schematically showing the state of the liquid film 215 generated on the surface to be cleaned 201a of the substrate 201 placed on the horizontal plane. FIG. 25 is a cross-sectional view schematically showing the state of the liquid film 207 generated on the surface to be cleaned 201a of the substrate 201 in the substrate cleaning method of the present embodiment.

  In FIG. 24, the substrate 201 is placed on a horizontal plane (not shown). When the ultrapure water in a pressurized state is ejected from the pressure-resistant nozzle 204 of the pure water ejecting means disposed at an interval above the surface to be cleaned 201a with respect to the surface to be cleaned 201a of the substrate 201, the surface to be cleaned 201a becomes Since it is horizontal, ultrapure water stays on the surface to be cleaned 201a, and a liquid film 215 having a large film thickness is formed. Although the thickness t1 of the liquid film 215 varies depending on the injection amount, injection pressure, and the like of ultrapure water, when ultrapure water is jetted from the pressure-resistant nozzle 204 toward the surface to be cleaned 201a in a linear locus, Grows to 1 mm or more. Further, at and near the point where the ultrapure water reaches the surface to be cleaned 201a, the high pressure region 216 in which the high pressure added to the ultrapure water is maintained almost simultaneously with the arrival of the ultrapure water. Is formed. Since the ultrapure water sprayed thereafter flows so as to bypass the high-pressure region 216, the ultrapure water does not reach the surface to be cleaned 201a of the substrate 201, and the ultrapure water is near the liquid film surface 215a. A flow (main flow) 217 is generated. As a result, the flow rate of ultrapure water in the vicinity of the surface to be cleaned 201a is substantially “0”, and even if fine particles (not shown) are attached to the surface to be cleaned 201a, it is difficult to remove from the surface to be cleaned 201a.

  On the other hand, as shown in FIG. 25, in the substrate cleaning method of the present embodiment, the substrate 201 is held at an angle θ21 with respect to the horizontal plane 202. Thus, when ultrapure water is discharged onto the surface to be cleaned 201 a of the substrate 201, the ultrapure water does not stay on the surface to be cleaned 201 a, but is mainly subjected to the action of gravity and discharged below the substrate 201. . For this reason, the thickness t2 of the liquid film 207 formed on the surface to be cleaned 201a of the substrate 201 is significantly thinner than 1 mm. Specifically, the thickness is about 100 to 500 μm. In addition, as in the case where the substrate 201 is placed on the horizontal surface 202, in this case, the high-pressure region is located at and near the point where the ultrapure water sprayed from the pressure-resistant nozzle 204 reaches the surface to be cleaned 201a of the substrate 201. 216 is formed. However, since the substrate 201 is tilted with respect to the horizontal plane 202, the high-pressure region 216 is relatively small compared to the case of FIG. Therefore, after the high pressure region 216 is formed, the ultrapure water sprayed toward the surface to be cleaned 201a is not obstructed by the high pressure region 216 and does not bypass the high pressure region. A main flow 217 that flows in the vicinity and flows in the vicinity of the surface to be cleaned 201a is generated. Therefore, fine particles (not shown) adhering to the surface to be cleaned 201 a are removed by the main flow 217. Here, since the liquid film thickness t2 mainly depends on the inclination angle θ21 of the substrate 201 with respect to the horizontal plane 202, the inclination angle θ21 is set to 90 ° in order to further improve the effect of removing the fine particles adhering to the surface to be cleaned 201a. It is preferable to approach. The closer the tilt angle θ21 is to 90 °, the smaller the liquid film thickness t2, and the fine particles are more likely to be subjected to stress due to the main flow 217. Further, since the liquid film thickness t2 is extremely small, the main flow 217 is shown as one liquid flow for convenience in FIG. 25. However, as shown in FIG. 22, FIG. 23 and FIG. The liquid flow is divided.

  Next, the case where the substrate contaminants attached to the surface to be cleaned 201a of the substrate 201 are metal particles will be described with reference to FIGS. FIG. 26 is a cross-sectional view schematically showing a mechanism for removing the metal particles 218a in the cleaning execution region 208 of the surface 201a to be cleaned. For the removal of the metal particles, subcritical ultrapure water pressurized to a subcritical state is particularly preferable among pure waters. Therefore, in the description related to FIG. 26, subcritical ultrapure water is used. When subcritical ultrapure water pressurized in the pressure-resistant nozzle 204 is sprayed onto the surface to be cleaned 201 a of the substrate 201 that is held in an inclined posture so as to form an inclination angle θ 21 with respect to the horizontal plane 202, In the first small region 209 that is the uppermost portion, liquid flows 209a, 209b, 209c, 209d, and 209e are generated in the liquid film 207. Although these liquid flows are expressed as five flows for convenience, these liquid flows can be combined and expressed as one liquid flow (main flow), or can be subdivided into six or more liquid flows. Is possible. When the metal particles 218a adhering to the surface to be cleaned 201a are subjected to stress by the liquid flows 209a and 209b flowing through the vicinity of the surface to be cleaned 201a, the bonds 219 between the metal atoms constituting the metal particles 218a are partially formed. It is cut and eluted into the liquid film 207 as metal particles 218b. The metal particles 218b are further subjected to stress such as the liquid flows 209c, 209d, and 209e, and flow in the liquid film 207 from the central portion in the thickness direction of the liquid film 207 to the liquid film surface 207a like the metal particles 218c. And discharged below the substrate 201. At this time, since most of the metal particles 217c do not flow through the vicinity of the surface to be cleaned 201a, reattachment to the surface to be cleaned 201a is prevented. Thus, in order to remove the metal particles 218a adhering to the surface to be cleaned 201a of the substrate 201, a liquid flow of subcritical ultrapure water that flows in the vicinity of the surface to be cleaned 201a is required. Further, when the thickness of the liquid film 207 is reduced, the liquid flow of subcritical ultrapure water flows through the vicinity of the surface to be cleaned 201a, and the removal performance of the metal particles 218a is improved. In order to reduce the thickness of the liquid film 207, it is preferable to make the inclination angle θ21 of the substrate 201 with respect to the horizontal plane 202 close to 90 ° as described in the explanation with reference to FIG.

  Next, the case where the substrate contaminant attached to the surface to be cleaned 201a of the substrate 201 is a metal compound will be described with reference to FIGS. FIG. 27 is a cross-sectional view schematically showing a mechanism for removing the metal compound in the cleaning execution region 208 of the surface 201a to be cleaned of the substrate 201. For the removal of the metal compound, subcritical ultrapure water is preferable as in the case of the metal particles. Therefore, subcritical ultrapure water is also used in the description related to FIG. Even when the metal compound adhering to the surface 201a to be cleaned of the substrate 201 is removed, a liquid flow of subcritical ultrapure water that flows near the surface 201a to be cleaned is required. That is, when subcritical ultrapure water pressurized in the pressure-resistant nozzle 204 is sprayed onto the surface to be cleaned 201 a of the substrate 201 that is inclined and held at an inclination angle θ 21 with respect to the horizontal plane 202, the liquid film 207 is injected. The liquid flows 209a, 209b, 209c, 209d, and 209e are generated. In the same manner as shown in FIG. 26, the metal compound 220a adhering to the surface to be cleaned 201a is cut in the bond 221 between the metal compounds 220a and eluted into the liquid film 207 as the metal compound 220b. The liquid flows through the liquid film 207 from the central portion in the thickness direction to the liquid film surface 207 a and is discharged below the substrate 201. Further, it is preferable to reduce the thickness of the liquid film 207 as in the case of the removal of the metal particles 218a shown in FIG. 26. For this purpose, the inclination angle θ21 of the substrate 201 with respect to the horizontal plane 202 is also set to 90 °. It is better to approach.

  Next, the case where the substrate contaminant attached to the surface 201a to be cleaned of the substrate 201 is an organic material will be described with reference to FIGS. FIG. 28 is a cross-sectional view schematically showing a mechanism for removing the organic substance 222a in the cleaning execution region 208 of the surface 201a to be cleaned of the substrate 201. Note that subcritical ultrapure water is also preferable for removing the organic substance 222a, as in the case of removing the metal particles 218a and the metal compound 220a. Therefore, subcritical ultrapure water is also used in the description related to FIG. The organic substance 222a is removed in the same manner as the metal particles 218a shown in FIG. 26 and the metal compound 220a shown in FIG. That is, when pressurized subcritical ultrapure water is sprayed from the pressure resistant nozzle 204 onto the surface to be cleaned 201a of the substrate 201 held at an angle θ21, the liquid film 207 of subcritical ultrapure water is applied onto the surface to be cleaned 201a. And liquid flows 209a, 209b, 209c, 209d, and 209e are generated in the liquid film 207. Among these, the liquid flows 209a and 209b flowing in the vicinity of the surface to be cleaned 201a in particular apply stress to the organic matter 222a adhering to the surface to be cleaned 201a. As a result, the carbon bond 223 in the organic substance 222 a is cut, and the organic substance 222 b that is an organic substance piece is eluted in the liquid film 207. The organic matter 222b is further subjected to stress such as the liquid flows 209c, 209d, and 209e, and becomes the organic matter 222c that flows through the central portion in the thickness direction of the liquid film 207. The organic matter 222c is finally discharged below the substrate 201. In order to increase the removal efficiency of the organic matter 222a, it is effective to reduce the thickness of the liquid film 207 by making the inclination angle θ21 of the substrate 201 with respect to the horizontal plane 202 as close to 90 ° as possible.

  FIG. 29 is a side view schematically showing the configuration of the substrate cleaning apparatus 225. The substrate cleaning apparatus 225 includes a substrate holding unit (not shown) that tilts and holds the substrate 201 so as to form an inclination angle θ21 with respect to the horizontal plane 202, and a pure water spray unit 226 that sprays pure water onto the surface to be cleaned 201a of the substrate 201. It is comprised including.

  Although not shown, the substrate holding means has a plate-like member made of metal or synthetic resin on which the substrate 201 is placed, for example. In the present embodiment, the plate-like member corresponds to the substrate holding part. The plate-like member can be provided with a holder for fixing the substrate 201. The pure water injection unit 226 includes a pressure-resistant nozzle 204 that injects pure water onto the surface to be cleaned 201a of the substrate 201, and a pure water supply unit (not shown). The pressure-resistant nozzle 204 corresponds to a cleaning liquid ejecting unit as a fluid supply unit. The plate-like member and the pressure-resistant nozzle 204 are provided in a processing space formed in the processing tank.

  The moving means includes an arm 227 that supports the pressure-resistant nozzle 204 so as to be angularly displaceable, and a slider 228 that is provided so as to be movable along a guide 229 that supports the arm 227 and is arranged in parallel to the substrate 201. Consists of. The guide 229 and the slider 228 are realized by, for example, a ball screw that is rotationally driven by a motor and a female screw member that is screwed into the ball screw.

  The attitude changing means changes the attitude of the processing tank, and thereby changes the attitude of the plate-like member and the pressure-resistant nozzle 204 provided in the processing tank. In this manner, the angle θ21 formed with respect to the horizontal plane 202 of the substrate 201 can be determined by appropriately adjusting the angle formed by the plate-shaped member with respect to the horizontal plane 202.

FIG. 30A is a perspective view showing the appearance of the pressure-resistant nozzle 204. FIG. 30B is a plan view schematically showing the configuration of the pure water ejection surface 230 in the pressure-resistant nozzle 204. A plurality of circular injection holes 231 that are a plurality of cleaning liquid injection holes are formed in a straight line on the pure water injection surface 230 of the pressure-resistant nozzle 204. The diameter d2 of the circular injection hole 231 is 200 μm or less in order to reduce the thickness of the pure water liquid film 207 formed on the surface to be cleaned 201a of the substrate 201 to less than 1 mm and improve the substrate contaminant removal performance. 10 μm to 100 μm is particularly preferable. Moreover, it is preferable that the center space | interval, ie, formation pitch d3, of the adjacent circular injection hole 231 satisfy | fills following Formula (1).
2 × d2 ≦ d3 ≦ 3 × d2 (1)

  Specifically, for example, there is a pressure-resistant nozzle in which the diameter d2 of the circular injection holes 231 is 30 μm and the formation pitch d3 of the circular injection holes 231 is 60 μm. When the pure water supplied to the pressure-resistant nozzle is pressurized to 4 MPa, the thickness of the liquid film 207 generated 20 mm downstream from the pure water collision point on the surface to be cleaned 201 a of the substrate 201 is extremely small, 100 to 150 μm. At this time, the ultrapure water flowing over the surface 201a to be cleaned of the substrate 201 has an average speed of 10 m / s or more. However, the numerical value and the expression (1) indicating the configuration of the pressure-resistant nozzle 204 described above are an example for generating the liquid film 207 on the surface to be cleaned 201a of the substrate 201, and in this embodiment, the liquid film 207 is used. Therefore, the structure of the pressure-resistant nozzle 204 is not limited in removing substrate contaminants.

  When pure water is sprayed from the pressure-resistant nozzle 204 onto the surface to be cleaned 201a of the substrate 201 held at an inclination angle θ21 with respect to the horizontal plane 202, a pure water liquid film 207 is formed on the surface to be cleaned 201a. .

  FIG. 31A is a perspective view showing the appearance of another embodiment of the pressure-resistant nozzle 232. FIG. 31B is a plan view schematically showing the configuration of the pure water ejection surface 233 in the pressure-resistant nozzle 232. A slit-like injection hole 234 that is a cleaning liquid injection hole is formed on the pure water injection surface 233 of the pressure-resistant nozzle 232. The gap d4 of the slit-shaped injection hole 234 is 200 μm or less in order to reduce the thickness of the pure water liquid film 207 formed on the surface to be cleaned 201a of the substrate 201 to less than 1 mm and improve the substrate contaminant removal performance. Is preferable, and 10 μm to 100 μm is particularly preferable. Specifically, for example, a pressure-resistant nozzle in which the gap d4 of the slit-like injection hole 234 is 30 μm can be mentioned. When the ultrapure water supplied to the pressure-resistant nozzle is pressurized to 4 MPa, the thickness of the liquid film 207 generated 20 mm downstream from the ultrapure water collision point on the surface to be cleaned 201a of the substrate 201 is as extremely thin as 100 to 150 μm. At this time, the ultrapure water flowing over the surface 201a to be cleaned of the substrate 201 has an average speed of 10 m / s or more. However, the above numerical value indicating the configuration of the pressure-resistant nozzle 232 is an example for generating the liquid film 207 on the surface to be cleaned 201a of the substrate 201, and in this embodiment, the substrate taint is removed by the liquid film 207. In the removal, the configuration of the pressure-resistant nozzle 232 is not limited.

  When pure water is sprayed from the pressure-resistant nozzle 232 onto the surface to be cleaned 201a of the substrate 201 held at an inclination angle θ21 with respect to the horizontal plane 202, a liquid film 207 of pure water is formed on the surface to be cleaned 201a. .

  Returning to FIG. 29, the arm 227 supports the pressure-resistant nozzle 204 so that it can be angularly displaced. Therefore, the pure water injection angle θ22 of the pressure-resistant nozzle 204 with respect to the surface to be cleaned 201a of the substrate 201 can be adjusted as appropriate. The arm 227 is supported by a slider 228, and the slider 228 is disposed so as to be movable along the guide 229. Since the guide 229 is arranged in parallel to the surface to be cleaned 201 a of the substrate 201, the arm 227 and thus the pressure-resistant nozzle 204 is supported by the slider 228 so as to move up and down in parallel to the surface to be cleaned 201 a of the substrate 201. It will be.

  The pure water supply means includes, for example, a pure water storage tank for storing pure water, a pressure-resistant hose having one end connected to the pure water storage tank and the other end connected to the pressure-resistant nozzle 204, and pressurizing pure water. And a pressurizing pump for feeding. Of course, the present invention is not limited to this configuration, and a general method for supplying a liquid to the nozzle can be employed.

  According to the substrate cleaning apparatus 225, for example, the surface 201a to be cleaned of the substrate 201 is cleaned as follows. First, the position of the pressure-resistant nozzle 204 is adjusted by moving the slider 228 so that the point where the pure water sprayed from the pressure-resistant nozzle 204 reaches the top in the vertical direction of the substrate 201. Next, injection of pure water 235 pressurized from the pressure-resistant nozzle 204 is started, and a thin liquid film 207 is formed on the surface to be cleaned 201 a of the substrate 201. The liquid flow in the liquid film 207 decelerates toward the lower side of the substrate 201 due to the viscosity of the pure water itself, friction with the surface to be cleaned 201a, and the like, and the film thickness of the liquid film 207 increases accordingly. Then, in the cleaning execution area 208, which is an area from a position directly below the point where the pure water 235 reaches on the surface to be cleaned 201a to a few centimeters below, substrate contaminants adhering to the surface to be cleaned 201a are removed. Therefore, when the pressure-resistant nozzle 204 is moved downward, the cleaning execution region 208 can be continuously generated toward the lower side of the substrate 201, and the entire substrate 201 can be cleaned. Further, by moving the pressure-resistant nozzle 204 from the upper side to the lower side of the substrate 201, the substrate is separated from the surface to be cleaned 201 a, and the substrate contaminants eluted in the liquid film 207 can be efficiently removed from the substrate 201. Can be discharged. Finally, when the cleaning execution area 208 reaches the bottom of the surface 201a to be cleaned of the substrate 201, the injection of pure water by the pressure-resistant nozzle 204 is stopped, and the cleaning of the substrate 201 is completed.

It is a perspective view which shows the structure of the substrate processing apparatus 31 which is one Embodiment of this invention. 3 is a cross-sectional view of a substrate processing apparatus 31. FIG. It is sectional drawing of the processing tank 33. FIG. 3 is a front view of a substrate holding unit 34. FIG. It is the side view seen from the arrow 81 direction of FIG. It is the side view seen from the arrow 82 direction of FIG. It is a perspective view of the 1st washing | cleaning liquid injection nozzle 41a. It is a front view of the 1st cleaning fluid injection nozzle 41a. It is a front view which shows the injection state of the cleaning liquid 93 injected from the 2nd cleaning liquid injection nozzle 41b. FIG. 4 is a diagram illustrating a positional relationship between the substrate holding unit and the substrate when the substrate is placed on the substrate holding unit. FIG. 4 is a diagram illustrating a positional relationship between the substrate holding unit and the substrate when the substrate is placed on the substrate holding unit. FIG. 4 is a diagram illustrating a positional relationship between the substrate holding unit and the substrate when the substrate is placed on the substrate holding unit. 6 is a diagram for explaining a cleaning / drying operation of the substrate processing apparatus 31. FIG. It is a figure for demonstrating the washing | cleaning drying operation following FIG. 13 of the substrate processing apparatus 31. FIG. 4 is a cross-sectional view showing a positional relationship between first and second cleaning liquid spray nozzles 41a and 41b and a substrate 32. FIG. It is sectional drawing which shows the flow of a washing | cleaning liquid. It is sectional drawing of the processing tank 33. It is a perspective view of the 1st washing | cleaning liquid injection nozzle 131 with which the substrate processing apparatus which is the other form of implementation of this invention is provided. 3 is a front view of a first cleaning liquid ejection nozzle 131. FIG. It is a side view for demonstrating a board | substrate cleaning method.

It is a perspective view for demonstrating the board | substrate cleaning method. It is sectional drawing which shows typically the state of the liquid film in a cleaning execution area | region. It is sectional drawing which shows typically the mechanism in which microparticles | fine-particles are removed in the washing | cleaning execution area | region. It is sectional drawing which shows typically the state of the liquid film which arises on the to-be-cleaned surface of the board | substrate mounted in a horizontal surface. It is sectional drawing which shows typically the state of the liquid film which arises on the to-be-cleaned surface of a board | substrate. It is sectional drawing which shows typically the mechanism which removes a metal particle. It is sectional drawing which shows typically the mechanism which removes a metal compound. It is sectional drawing which shows typically the mechanism which removes organic substance. It is a side view which shows typically the structure of a board | substrate cleaning apparatus. FIG. 30A is a perspective view showing the appearance of the pressure-resistant nozzle. FIG. 30B is a plan view schematically showing the configuration of the pure water injection surface in the pressure-resistant nozzle. Fig.31 (a) is a perspective view which shows the external appearance of the pressure | voltage resistant nozzle of another form. FIG. 31B is a plan view schematically showing a configuration of a pure water ejection surface in a pressure nozzle of another form. It is a figure which shows typically the structure of the substrate processing apparatus 1 which is a prior art. It is a figure which shows typically the structure seen from the conveyance direction 3 of the board | substrate W of the washing | cleaning part 2 which comprises some substrate processing apparatuses.

Explanation of symbols

31,225 Substrate processing apparatus 32,201 Substrate 33 Processing tank 34 Substrate holder 35 Fluid supply means 36 Moving means 37 Attitude changing means 38 Processing space 41a, 131 First cleaning liquid injection nozzle 41b Second cleaning liquid injection nozzle 42a For first drying Gas injection nozzle 42b Second drying gas injection nozzle 43 Cleaning liquid injection means 44 Drying gas injection means 45 First movable body 47 First connection portion 49 Second movable body 51 Second connection portion 52 Support body 53 Rotation drive source 64 Substrate loading / unloading ports 91 and 132 Cleaning liquid injection holes 203 and 226 Pure water injection means 204 and 232 Pressure-resistant nozzles 205 Injection holes 231 Circular injection holes 234 Slit injection holes

Claims (11)

A treatment tank in which a treatment space is formed;
A substrate holding unit provided in the processing space, and holding the substrate in the processing space by the substrate holding unit;
A fluid supply unit having a fluid supply unit provided in the processing space, and supplying a processing fluid for processing the substrate from the fluid supply unit to the substrate held by the substrate holding unit;
A substrate processing apparatus comprising: a posture changing means for changing the posture of the processing tank. Attitude change means
A support that rotatably supports the processing tank around a rotation axis that extends horizontally through the center of gravity of the processing tank or near the center of gravity;
The substrate processing apparatus according to claim 1, further comprising a rotation drive source that rotates the processing tank about a rotation axis. A moving unit that moves the fluid supply unit along the substrate held by the substrate holding unit;
Transportation means
A movable body provided outside the treatment tank;
A movable body drive source that is provided outside the processing tank and drives the movable body to be displaced;
3. The substrate processing apparatus according to claim 1, further comprising a connecting portion that is provided from the processing space to the outside of the processing tank and connects the fluid supply portion and the movable body. The fluid supply means includes a cleaning liquid ejecting means for ejecting a cleaning liquid for cleaning the substrate from a cleaning liquid ejecting section which is a fluid supply section.
The cleaning liquid spraying unit sprays the cleaning liquid from the cleaning liquid spraying unit onto the substrate in a processing state in which the posture of the processing tank is maintained so that the substrate held by the substrate holding unit forms a predetermined processing angle with respect to the horizontal plane. The substrate processing apparatus according to claim 1, wherein:   5. The substrate processing apparatus according to claim 4, wherein the predetermined processing angle is selected from 5 degrees to 90 degrees.   6. The substrate processing apparatus according to claim 4, wherein a plurality of cleaning liquid injection holes having a diameter of 10 μm or more and 200 μm or less are formed in the cleaning liquid injection section in a straight line.   6. The substrate processing apparatus according to claim 4, wherein the cleaning liquid ejecting portion is formed with cleaning liquid ejecting holes extending in a straight line and having an opening gap of 10 μm or more and 200 μm or less.   The substrate processing apparatus according to claim 4, wherein the cleaning liquid spraying unit sprays the cleaning liquid onto both surfaces of the substrate held by the substrate holding unit.   In the processing state, a facing surface facing the substrate held by the substrate holding portion from the upper side among the inner surfaces of the processing tank is inclined with respect to a horizontal plane. 2. The substrate processing apparatus according to 1.   The fluid supply means includes a drying gas injection means for injecting a drying gas for drying the substrate from a drying gas injection section which is a fluid supply section. The substrate processing apparatus as described in one.   The substrate processing apparatus according to claim 1, wherein a substrate loading / unloading port for loading / unloading a substrate to / from a processing space is formed in the processing tank.

Images