JP2005252232A5

JP2005252232A5 -

Info

Publication number: JP2005252232A5
Application number: JP2004362116A
Authority: JP
Filing date: 2004-12-15
Publication date: 2007-12-06
Anticipated expiration: 2024-12-15

Claims

A chip-mounted object on which a light-transmitting chip including an integrated circuit having a semiconductor film having a thickness of 0.2 μm or less is mounted.

A chip-mounted object including a chip having a light-transmitting property, including an integrated circuit having a semiconductor film having a thickness of 0.2 μm or less,
The integrated circuit includes a ROM having a memory cell selected by a circuit connection formed by a droplet discharge method or a laser cut method.

A chip-mounted object having translucency , mounted with a chip including an integrated circuit having a semiconductor film having a thickness of 0.2 μm or less,
The integrated circuit includes a first ROM having memory cells selected by circuit connection formed by a droplet discharge method or a laser cut method;
And a second ROM having a memory cell selected by circuit connection formed by a photolithography method.

A chip-mounted object having translucency , mounted with a chip including an integrated circuit having a semiconductor film having a thickness of 0.2 μm or less,
The chip mounted product, wherein the integrated circuit has a non-rewritable nonvolatile memory storing unique data based on characteristic variations of the semiconductor film.

5. The chip mounted product according to claim 4 , wherein the semiconductor film is made of a crystalline semiconductor film.

An integrated circuit thickness having the following semiconductor film 0.2 [mu] m, to have a, an antenna provided on the integrated circuit, a switch-up payload equipped with chips having translucency ,
A chip-mounted object , wherein the antenna is electrically connected to the integrated circuit.

Provided over the first substrate, mounted an integrated circuit having the 0.2μm or less of the semiconductor film thickness, the antenna provided on a second substrate, to have a, a chip with a light-transmitting property a the switch-up mounted object,
A chip-mounted object , wherein the antenna is electrically connected to the integrated circuit.

In any one of Claims 1 thru | or 7 ,
The chip mounting object, wherein the semiconductor film is provided on an insulating surface of any of a glass substrate, a quartz substrate, a stainless steel substrate, and a substrate made of a synthetic resin having flexibility.

In any one of Claims 1 thru | or 8 ,
The integrated circuit, chip mounting was characterized by having a thin film transistor having the semiconductor film.

Forming a semiconductor film having a thickness of 0.2 μm or less;
Crystallizing the semiconductor film to form a crystalline semiconductor film,
Forming an integrated circuit having the crystalline semiconductor film;
A method for manufacturing a chip-mounted object, comprising mounting a chip having translucency, the chip having the integrated circuit.

Forming a semiconductor film having a thickness of 0.2 μm or less;
Crystallizing the semiconductor film to form a crystalline semiconductor film,
On the crystalline semiconductor film, forming a first wiring by photolithography,
It said first forming a first memory cell which is selected by a circuit connected by wiring, and on the crystalline semiconductor film, forming a second wiring by a droplet discharging method or a laser cutting method,
Wherein forming a second memory cell which is selected to form an integrated circuit by a circuit connected by a second wiring,
A method for manufacturing a chip-mounted object, comprising mounting a chip having translucency, the chip having the integrated circuit.

Forming a semiconductor film having a thickness of 0.2 μm or less;
Crystallizing the semiconductor film with a laser to form a crystalline semiconductor film,
Forming an integrated circuit having the crystalline semiconductor film;
A method for manufacturing a chip-mounted object, comprising mounting a chip having translucency, the chip having the integrated circuit.

Forming a semiconductor film having a thickness of 0.2 μm or less;
A metal element is added so as to be in contact with the semiconductor film, and is heated to crystallize to form a first crystalline semiconductor film,
Crystallizing the first crystalline semiconductor film with a laser to form a second crystalline semiconductor film;
Forming an integrated circuit having the second crystalline semiconductor film;
A method for manufacturing a chip-mounted object, comprising mounting a chip having translucency, the chip having the integrated circuit.

In claim 12 or 13 ,
Forming a channel formation region of the semiconductor film so that the laser irradiation direction and the carrier movement direction are along;
A method of manufacturing a chip-mounted object, wherein the chip is mounted while being fixed so as to bend in a direction perpendicular to the laser irradiation direction.