JP2009095962A - Method for manufacturing thin-film semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film semiconductor device, capable of suppressing the generation of cracks and chipping of a thin-film circuit layer and of cutting the thin-film semiconductor device into segmented pieces. <P>SOLUTION: This method for manufacturing the thin-film semiconductor device formed with the thin-film circuit layer 6 in a resin substrate 5 includes: a thin-film circuit layer forming process for forming the thin-film circuit layer 6, having a plurality of element regions in the resin substrate 5; and a cutting process for cutting each of the plurality of element regions to cut the thin-film semiconductor device into segmented pieces as one thin-film semiconductor device. In the cutting process, the resin substrate 5 is cut by an outer peripheral part 30a of a dicing blade 30, having an abrasive grain diameter that exceeds 10 μm, and the thin-film circuit layer 6 is cut by an inner peripheral part 30b of the dicing blade 30, having an abrasive grain diameter of 10 μm or smaller. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a thin film semiconductor device in which a thin film circuit layer including a semiconductor element or the like is formed on a substrate surface.

  A thin film semiconductor device is configured by forming a thin film circuit layer including a semiconductor element on a substrate. As a substrate used in this thin film semiconductor device, a single crystal silicon wafer, a quartz glass substrate, a heat resistant glass substrate, a resin substrate, etc. are used, and a substrate of a material corresponding to the required performance and function of the thin film semiconductor device is selected. ing. In particular, a thin film semiconductor device using a resin film as a resin substrate has attracted attention because it can provide a thin and flexible thin film semiconductor device because the substrate is thin and flexible.

  As a method for manufacturing a thin film semiconductor device using a resin substrate such as a resin film, a method of obtaining a thin film circuit layer or the like by sequentially laminating a semiconductor layer, an insulating layer, a metal layer and the like on the resin substrate is known. As another method, a peeling transfer method is known in which a thin film circuit layer or the like formed on a glass substrate or the like is peeled from the glass substrate, and the separated thin film circuit layer or the like is bonded onto a resin substrate. For example, Patent Document 1 discloses an example of manufacturing a thin film semiconductor device by a peeling transfer method.

Japanese Patent Laid-Open No. 10-125931

In the manufacture of the thin film semiconductor device as described above, usually, a plurality of thin film circuits and the like are formed on a single resin substrate, and finally cut by using a dicing saw device, whereby each is divided into a plurality of pieces. The thin film semiconductor device is obtained.
In the singulation cutting of the thin film semiconductor device, the cutting is performed using a dicing blade having a coarse abrasive grain size. The reason for using a dicing blade with a coarse abrasive particle size is that when a dicing blade with a fine abrasive particle size is used, the resin of the substrate is clogged into the dicing blade and clogging occurs, making cutting difficult.
However, since the thin film circuit layer formed on the resin substrate is made of an inorganic hard brittle material, cracks and chipping occur on the cut surface of the thin film circuit layer when it is cut using a dicing blade with a coarse abrasive grain size. There are things to do. Then, starting from the crack and chipping, the crack proceeds to the inside of the thin film circuit layer to cause disconnection of the thin film circuit, and there is a problem that the reliability of the thin film semiconductor device is lowered.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  A manufacturing method of a thin film semiconductor device according to this application example is a manufacturing method of a thin film semiconductor device in which a thin film circuit layer is formed on a resin substrate, and the thin film circuit layer having a plurality of element regions is formed on the resin substrate. A thin film circuit layer forming step, and a cutting step of cutting each of the plurality of element regions into a single thin film semiconductor device, wherein the abrasive grain size is equal to or less than the first grain size. The thin film circuit layer is cut using a dicing blade, and the resin substrate is cut using a dicing blade having a particle size exceeding the first particle size.

In a thin film semiconductor device using a resin substrate, there is a difference in mechanical properties between the substrate and the thin film circuit layer. The resin substrate is made of organic material and has a small elastic constant, and the thin film circuit layer is a hard and brittle material containing an inorganic material thin film deposited on the substrate surface by chemical vapor deposition (CVD), sputtering, etc. The constant is large.
A material having a small elastic constant, such as a resin substrate, becomes clogged when a dicing blade having fine abrasive grains is used, and the cutting ability is lowered and cutting becomes difficult. For this reason, it is suitable to cut the resin substrate using a dicing blade having coarse abrasive grains.
On the other hand, a brittle material having a large elastic constant such as a thin film circuit layer is likely to crack and chip on the cut surface when a dicing blade having coarse abrasive grains is used. For this reason, it is suitable to cut the thin film circuit layer using a dicing blade having fine abrasive grains.
In this way, when cutting a thin film semiconductor device into individual pieces, a dicing blade (a dicing having coarse abrasive grains) is used to cut a resin substrate having a small elastic constant with a grain size exceeding the first grain size. A thin film circuit layer having a large elastic constant is cut using a dicing blade having a grain size equal to or smaller than the first grain size (a dicing blade having fine grains). Thus, cracks and chipping in the thin film circuit layer are suppressed, and the thin film semiconductor device can be easily separated. And the factor which reduces the reliability resulting from the crack in the cut surface of a thin film circuit layer and chipping can be reduced.

  In the method for manufacturing a thin film semiconductor device according to the above application example, the first particle size is 10 μm, the cutting step has a particle size with an abrasive particle size exceeding 10 μm at a thin outer peripheral portion, and is thick. It is preferable to cut the resin substrate and the thin film circuit layer by using a dicing blade having an abrasive particle diameter of 10 μm or less on the inner peripheral portion thereof.

  According to this manufacturing method, the first particle size is 10 μm, the thin outer peripheral portion of the dicing blade has a particle size exceeding 10 μm, and the thick inner peripheral portion has an abrasive particle size. Since it has a particle size of 10 μm or less, it is possible to efficiently cut the resin substrate and the thin film circuit layer by one cutting operation.

  In the thin film semiconductor device manufacturing method according to the application example, the thin film circuit layer forming step forms a first separation layer on a first substrate, and further forms the thin film circuit layer on the first separation layer. A step of forming a second separation layer on the second substrate, and bonding the thin film circuit layer and the second separation layer through the first adhesive layer; and a layer of the first separation layer by light irradiation. Peeling off at least one of the boundary surfaces between the inner layer and another layer in contact with the first separation layer, and transferring the thin film circuit layer from the first substrate side to the second substrate side; A step of adhering the thin film circuit layer transferred to the second substrate side and the resin substrate through a second adhesive layer, and the other in contact with the second separation layer in the second separation layer by light irradiation Causing peeling at least one of the boundary surfaces with the layer, A step of transferring the film circuit layer from the second substrate side to the resin substrate side, it is desirable to include a step of removing the first adhesive layer.

  This manufacturing method can be used for a thin film semiconductor device in which a thin film circuit layer or the like is bonded onto a resin substrate by a peeling transfer method. By using such a peeling transfer method, a thin film circuit layer can be formed by a high temperature process, and generally includes a thin film transistor having better performance than a thin film transistor manufactured by a low temperature process directly on a flexible substrate having low heat resistance. A thin film semiconductor device can be obtained.

  In the method for manufacturing a thin film semiconductor device according to the application example, it is preferable that the first separation layer and the second separation layer are made of amorphous silicon.

  According to this manufacturing method, heat irradiation, ablation, gas release, or state change is induced by irradiating light to amorphous silicon, and the first and second separation layers or the first and second separation layers are induced. It is possible to cause peeling on at least one of the boundary surfaces with other layers in contact with the surface.

  In the method for manufacturing a thin film semiconductor device according to the application example, it is preferable to use light having an excimer laser as a light source for the light irradiation.

  According to this manufacturing method, light using an excimer laser as a light source has a wavelength in the ultraviolet region and has high energy, and thus is suitable for efficiently photoexciting the first and second separation layers. Then, in the separation layer provided on the substrate by irradiation with the excimer laser beam, effects such as direct cutting of molecular bonds and gas evaporation that are less affected by heat can be produced.

  In the method for manufacturing a thin film semiconductor device according to the application example, it is preferable that the thin film circuit layer includes a thin film transistor.

  According to this manufacturing method, the thin film semiconductor device can be configured as various flat panel displays such as a liquid crystal display device, an electrophoretic display device, and an electroluminescence device, and a semiconductor device for driving electronic paper.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.
(Embodiment)

FIG. 1 is a perspective view showing the configuration of the thin film semiconductor device of this embodiment.
The thin film semiconductor device 1 includes a resin substrate 5 and a thin film circuit layer 6 formed on the surface of the resin substrate 5. The resin substrate 5 is made of a resin film such as polyimide and has a thickness of 100 to 200 μm. The thin film circuit layer 6 is formed of a hard brittle material including an inorganic material thin film deposited on the substrate surface by a chemical vapor deposition method (CVD method), a sputtering method or the like, and has a thickness of 2 to 3 μm.
The thin film circuit layer 6 may be formed directly on the resin substrate 5 or may be formed by a separate process and bonded to the substrate with an adhesive or the like by, for example, a peeling transfer method.
The thin film circuit layer 6 has an element region 7 in which a large number of thin film transistors are formed. The element region 7 is a region that exhibits a certain function. For example, an electric circuit, a display circuit, a micro mechanical structure, or the like may be formed.

Further, the size of the planar shape of the thin film circuit layer 6 is smaller than the size of the resin substrate 5, and the resin substrate 5 is configured to be slightly larger so that a stepped portion is formed on the outer periphery of the thin film circuit layer 6. .
Here, on the outer periphery of the thin film semiconductor device 1, the thin film circuit layer 6 is cut using a dicing blade having a particle diameter of 10 μm or less, and the resin substrate 5 has a particle diameter exceeding 10 μm. It is cut using a dicing blade.
In addition, although expressed as a dicing blade having a grain size exceeding 10 μm in the above, abrasive grains of 10 μm or less may be included in the production of abrasive grains. It means that the particle size exceeds 10 μm.

Such a thin film semiconductor device 1 is manufactured by being separated from the multi-piece resin substrate shown in FIG.
A thin film circuit layer 6 including a plurality of element regions 7 is formed on the surface of the multi-piece resin substrate 8 and is cut into individual pieces by using a dicing blade for each region. It has gained.
In this way, a large number of thin film circuit layers 6 are collectively produced on the multi-piece resin substrate 8 and the thin film semiconductor device 1 is efficiently manufactured by performing a cutting process for dividing the thin film circuit layers 6 into individual thin film circuit layers 6. can do.

Next, a method for manufacturing the thin film semiconductor device of this embodiment will be described.
3, 4, and 5 are explanatory views for explaining the manufacturing process of the thin film semiconductor device of this embodiment. Here, a manufacturing process of a thin film semiconductor device will be described with reference to schematic cross-sectional views.
In the present embodiment, a method of manufacturing a thin film semiconductor device using a peeling transfer method in which a thin film circuit layer formed on a glass substrate or the like is peeled from the glass substrate and the separated thin film circuit layer is bonded onto a resin substrate will be described.

As shown in FIG. 3A, an amorphous silicon layer is formed as a first separation layer 11 on the surface of a first substrate 10 such as a glass substrate by a CVD method. Then, a plurality of thin film circuit layers 6 are formed on the first separation layer 11. The thin film circuit layer 6 includes a thin film transistor 18 having a gate electrode 16, a source electrode and a drain electrode 17, and a protective layer 12, a gate insulating film 13, and an interlayer insulating layer 14 are provided in the manufacturing process. A protective layer 15 covering the thin film transistor 18 is provided, and a connection wiring 19 connected to the source electrode and the drain electrode 17 is formed on the protective layer 15.
Note that the one-point difference line B indicates the boundary between adjacent thin film circuit layers 6 and can be independent as individual thin film circuit layers by cutting at the boundary. A dot-dash line C indicates the boundary of the element region, and circuit elements and the like are formed in the arrow direction.

Next, as shown in FIG. 3B, a second substrate 20 such as a glass substrate having an amorphous silicon layer formed as a second separation layer 21 on the surface is formed on the thin film circuit layer 6 and the first adhesive layer 22. Paste through. A water-soluble adhesive is used for the first adhesive layer 22.
Then, as shown in FIG. 3C, excimer laser light is irradiated from the back surface of the first substrate 10 to lose the amorphous silicon bonding force of the first separation layer 11.
Light using an excimer laser as a light source has a wavelength in the ultraviolet region and has high energy, and is therefore suitable for efficiently optically exciting the first separation layer 11. Amorphous silicon is induced by exothermic phenomenon, ablation, gas emission, or state change by irradiation of excimer laser light, and at least of the boundary surface between the first separation layer 11 and another layer in contact with the first separation layer 11. Either can cause delamination.
As described above, in the first separation layer 11 provided on the substrate by the irradiation of the excimer laser beam, it is possible to produce actions such as direct cutting of molecular bonds and gas evaporation with little influence of heat.
Subsequently, as shown in FIG. 3D, the thin film circuit layer 6 is transferred to the second substrate 20 side by peeling and separating the first substrate 10.

Next, as shown in FIG. 4A, a plurality of thin film circuit layers 6 are bonded to the resin substrate 8 for taking a plurality of pieces through the second adhesive layer 24. An epoxy water-insoluble adhesive is used for the second adhesive layer 24, and its thickness is set to 25 to 30 μm. If a substrate having an adhesion function added to the surface of the multi-cavity resin substrate 8 is used, the second adhesive layer 24 may not be provided.
Then, as shown in FIG. 4B, the excimer laser light is irradiated from the back surface of the second substrate 20 to lose the amorphous silicon bonding force of the second separation layer 21.
Light that uses an excimer laser as a light source has a wavelength in the ultraviolet region and has high energy, and is therefore suitable for efficiently optically exciting the second separation layer 21. The amorphous silicon is induced by heat generation phenomenon, ablation, gas release, or state change by irradiation of the excimer laser light, and at least of the boundary surface between the second separation layer 21 and another layer in contact with the second separation layer 21. Either can cause delamination.
As described above, in the second separation layer 21 provided on the substrate by the irradiation of the excimer laser light, it is possible to produce actions such as direct cutting of molecular bonds and gas evaporation that are less affected by heat.
Subsequently, as shown in FIG. 4C, the second substrate 20 is peeled and separated, and the thin film circuit layer 6 is moved to the resin substrate 8 side for taking multiple pieces.
Thereafter, as shown in FIG. 4D, the first adhesive layer 22 made of a water-soluble adhesive is washed and removed.
In this manner, a plurality of thin film circuit layers 6 are formed on the multi-cavity resin substrate 8 described with reference to FIG.
By using such a peeling transfer method, the thin film circuit layer 6 can be formed by a high temperature process, and generally a thin film transistor having better performance than a thin film transistor manufactured by a low temperature process directly on a flexible substrate having low heat resistance. The thin film semiconductor device 1 provided can be obtained.
The contents described above with reference to FIGS. 3 and 4 are the thin film circuit layer forming step.

Next, a cutting process in the method for manufacturing a thin film semiconductor device will be described.
As shown in FIG. 5, a dicing blade 30 is used to cut at the boundary position between the adjacent thin film circuit layers 6 described above.
The dicing blade 30 includes a thin outer peripheral portion 30a and a thick inner peripheral portion 30b. Diamond abrasive grains having an abrasive grain size exceeding 10 μm are fixed to the surface of the thin outer peripheral portion 30a, and diamond abrasive grains having an abrasive grain size of 10 μm or less are fixed to the surface of the thick inner peripheral portion 30b. Note that diamond abrasive grains having an abrasive grain size of 10 μm or less are fixed to a step 30c at the boundary between the outer circumference 30a and the inner circumference 30b.
By setting the cutting amount of the dicing blade 30 using the dicing blade 30, the thin outer peripheral portion 30a cuts the second adhesive layer 24 and the resin substrate 5, and the thick inner peripheral portion 30b is the thin film circuit layer 6. To cut. That is, the thin film circuit layer 6 is cut with diamond abrasive grains having an abrasive grain size of 10 μm or less, and the second adhesive layer 24 and the resin substrate 5 are cut with diamond abrasive grains having an abrasive grain size exceeding 10 μm.
Thus, by cutting four sides of the thin film semiconductor device 1, the thin film semiconductor device 1 can be separated into pieces as shown in FIG.

As described above, in the thin film semiconductor device 1 using the resin substrate 5 of the present embodiment, the second adhesive layer 24, the resin substrate 5 and the thin film circuit layer 6 have a difference in mechanical properties. The second adhesive layer 24 and the resin substrate 5 are made of an organic material and have a small elastic constant, and the thin film circuit layer 6 includes an inorganic material thin film deposited on the substrate surface by chemical vapor deposition (CVD), sputtering, or the like. It is a hard and brittle material, and its elastic constant is large.
A material having a small elastic constant, such as a resin substrate, becomes clogged when a dicing blade having fine abrasive grains is used, and the cutting ability is lowered and cutting becomes difficult. For this reason, it is suitable to cut the resin substrate using a dicing blade having coarse abrasive grains.
On the other hand, a brittle material having a large elastic constant such as a thin film circuit layer is likely to crack and chip on the cut surface when a dicing blade having coarse abrasive grains is used. For this reason, it is suitable to cut the thin film circuit layer using a dicing blade having fine abrasive grains.

As described above, in cutting when the thin film semiconductor device 1 is singulated, the outer peripheral portion 30a of the dicing blade 30 having a particle size with an abrasive particle size exceeding 10 μm is applied to the second adhesive layer 24 and the resin substrate 5 having a small elastic constant. The thin film circuit layer having a large elastic constant is cut by the inner peripheral portion 30b of the dicing blade 30 having a grain size of 10 μm or less, thereby generating cracks and chipping in the thin film circuit layer 6. The thin film semiconductor device 1 can be easily separated. And the factor which reduces the reliability resulting from the crack in the cut surface of the thin film circuit layer 6, and chipping can be reduced.
Further, the dicing blade 30 having a particle diameter of more than 10 μm at the thin outer peripheral portion 30 a and a particle diameter of 10 μm or less at the thick inner peripheral portion 30 b is used. Thus, it is possible to efficiently cut the second adhesive layer 24, the resin substrate 5 and the thin film circuit layer 6 by one cutting operation.
Further, when a flexible resin substrate 5 such as a resin film is used as in the present embodiment, the outer peripheral portion of the thin film semiconductor device 1 is free from defects such as chipping cracks. The thin film semiconductor device 1 that can cope with bending and the like, has no progress of cracks, and has excellent reliability can be provided.
(Modification)

Next, a modified example in the cutting process of the present embodiment will be described.
FIG. 6 is a schematic cross-sectional view showing a cutting process using a dicing blade of another shape. In this modification, only the shape of the dicing blade is different from the above embodiment, and the shape of the dicing blade will be described.
The dicing blade 31 includes a thin outer peripheral portion 31a and a thick inner peripheral portion 31b, and a tapered portion 31c that connects the outer peripheral portion 31a and the inner peripheral portion 31b. Diamond abrasive grains having an abrasive grain size exceeding 10 μm are fixed to the surfaces of the thin outer peripheral portion 31a and the tapered portion 31c, and diamond abrasive grains having an abrasive grain size of 10 μm or less are fixed to the surface of the thick inner peripheral portion 31b. Has been.

By setting the cutting amount of the dicing blade 31 using the dicing blade 31 described above, the outer peripheral portion 31a and the tapered portion 31c cut the second adhesive layer 24 and the resin substrate 5, and the inner peripheral portion 31b removes the thin film circuit layer 6. To cut. That is, the thin film circuit layer 6 is cut with diamond abrasive grains having an abrasive grain size of 10 μm or less, and the second adhesive layer 24 and the resin substrate 5 are cut with diamond abrasive grains having an abrasive grain size exceeding 10 μm.
Thus, providing the taper part 31c in the dicing blade 31 has an effect of reducing the cutting load. Furthermore, even if a dicing blade as described above is used, the present embodiment can be implemented, and the same effects as those of the present embodiment can be obtained.

FIG. 7 is a schematic cross-sectional view showing a modification of the cutting process. In this modification, the cutting process is divided into two processes.
First, as shown in FIG. 7A, the protective layer 15 to the protective layer 12 of the thin film circuit layer 6 are used by using a thick dicing blade 32 having diamond abrasive grains having an abrasive grain size of 10 μm or less fixed on the surface. Cut until.
Thereafter, as shown in FIG. 7B, the second adhesive layer 24 and the resin substrate 5 are cut and cut by using a thin dicing blade 33 having diamond abrasive grains having an abrasive grain size exceeding 10 μm fixed on the surface. To do.
In this way, the thin film circuit layer 6 is cut with diamond abrasive grains having an abrasive grain size of 10 μm or less, and the second adhesive layer 24 and the resin substrate 5 are cut with diamond abrasive grains having an abrasive grain size exceeding 10 μm. Thus, the thin film semiconductor device cutting step may be performed in two steps.

The perspective view which shows the structure of the thin film semiconductor device of this embodiment. FIG. 5 is a perspective view for explaining singulation of a thin film semiconductor device from a multi-cavity resin substrate in this embodiment. FIG. 6 is a schematic cross-sectional view illustrating a manufacturing process of the thin film semiconductor device of the embodiment. FIG. 6 is a schematic cross-sectional view illustrating a manufacturing process of the thin film semiconductor device of the embodiment. FIG. 6 is a schematic cross-sectional view illustrating a manufacturing process of the thin film semiconductor device of the embodiment. The schematic cross section explaining the modification which uses the other dicing blade in the cutting process of this embodiment. The schematic cross section which shows the modification of the cutting process of this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Thin film semiconductor device, 5 ... Resin substrate, 6 ... Thin film circuit layer, 7 ... Element area | region, 8 ... Resin substrate for multi-piece picking, 10 ... 1st substrate, 11 ... 1st separation layer, 12 ... Protective layer, 13 DESCRIPTION OF SYMBOLS ... Gate insulating film, 14 ... Interlayer insulating layer, 15 ... Protective layer, 16 ... Gate electrode, 17 ... Source electrode and drain electrode, 18 ... Thin-film transistor, 19 ... Connection wiring, 20 ... 2nd board | substrate, 21 ... 2nd isolation layer 22 ... 1st adhesive layer, 24 ... 2nd adhesive layer, 30 ... Dicing blade, 30a ... Thin outer peripheral part, 30b ... Thick inner peripheral part.

Claims (6)

A method of manufacturing a thin film semiconductor device in which a thin film circuit layer is formed on a resin substrate,
A thin film circuit layer forming step of forming the thin film circuit layer having a plurality of element regions on the resin substrate; and a cutting step of cutting each of the plurality of element regions into individual thin film semiconductor devices. Prepared,
In the cutting step, the thin film circuit layer is cut using a dicing blade having an abrasive particle size equal to or smaller than the first particle size, and the resin substrate is formed using a dicing blade having a particle size exceeding the first particle size. A method of manufacturing a thin film semiconductor device comprising cutting. In the manufacturing method of the thin film semiconductor device according to claim 1,
The first particle size is 10 μm;
In the cutting step, the resin is obtained by using a dicing blade having a particle diameter of more than 10 μm on the thin outer peripheral part and a particle diameter of 10 μm or less on the inner peripheral part of the thick wall. A method of manufacturing a thin film semiconductor device, comprising cutting a substrate and the thin film circuit layer. In the manufacturing method of the thin film semiconductor device according to claim 1 or 2,
The thin film circuit layer forming step includes
Forming a first separation layer on the first substrate, and further forming the thin film circuit layer on the first separation layer;
Forming a second separation layer on the second substrate, and bonding the thin film circuit layer and the second separation layer through a first adhesive layer;
The thin film circuit layer is peeled from the first substrate side by peeling off at least one of the first separation layer and the boundary surface with the other layer in contact with the first separation layer by light irradiation. A process of transferring to two substrate sides;
Bonding the thin film circuit layer transferred to the second substrate side and the resin substrate via a second adhesive layer;
The thin film circuit layer is peeled off from the second substrate side by causing light to peel at least one of the second separation layer and the boundary surface with the other layer in contact with the second separation layer by light irradiation. A process of transferring to the substrate side;
Removing the first adhesive layer;
A method of manufacturing a thin film semiconductor device comprising: In the manufacturing method of the thin film semiconductor device according to claim 3,
A method of manufacturing a thin film semiconductor device, wherein the first separation layer and the second separation layer are made of amorphous silicon. In the manufacturing method of the thin film semiconductor device according to claim 3,
A method of manufacturing a thin film semiconductor device, wherein light using an excimer laser as a light source is used for the light irradiation. In the manufacturing method of the thin film semiconductor device according to any one of claims 1 to 5,
A method of manufacturing a thin film semiconductor device, wherein the thin film circuit layer includes a thin film transistor.

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