JP2001003163A - Ion plating vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a dense vapor deposition film free from damage and to easily form a desired dielectric film even in the case a dielectric material is used as a vapor depositing material. SOLUTION: A vapor depositing source 14 is arranged at the lower part of a vacuum tank 12, a high-frequency ring 16 applied with high-frequency from a high-frequency power source 26 is arranged on the upper part thereof, and moreover, a substrate dome 18 holding a substrate 20 as the object for film formation is arranged on the upper part thereof. Then, a high-frequency power source 28 is connected to the substrate dome 18, a capacitor 30 is interposed between the high-frequency power source 28 and the substrate dome 18, furthermore, an electrode 22 for a d.c. power source as a metallic dome is arranged on the back of the substrate dome 18, and is applied with negative voltage from a d.c. power source 32.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an ion plating deposition apparatus, and more particularly to an ion plating deposition apparatus used for forming various kinds of films such as optical thin films.

[0002]

2. Description of the Related Art FIG. 2 is a schematic diagram of a conventional ion plating vapor deposition apparatus 40 using a high-frequency coil.
In FIG. 2, a high-frequency ring 46 is installed in a chamber 42 of an ion plating vapor deposition apparatus 40 above a vapor deposition source 44 containing a vapor deposition material.
A high frequency of 6 MHz is applied by a high frequency power supply 54.
Into this chamber 42, oxygen or nitrogen is introduced as a plasma reaction gas through a gas inlet 52, and an activation process such as ionization, oxidation, nitriding, or a reaction process is performed in a discharge plasma together with a vaporized deposition material. Generate. A substrate dome 48 is further provided above the high-frequency ring 46, and a substrate 50 for forming a vapor-deposited film is set on the surface of the substrate dome 48. By being given, the deposition particles ionized in the plasma collide with the substrate 50 by the electric field acceleration, and are deposited on the surface of the substrate 50 to form a film. Also, as a method other than forcibly applying an electric field to the substrate as described above, for a substrate dome that is not electrically grounded, there is a method of charging the substrate dome by electrons dissociated in plasma, and the like. The same effects as above can be obtained.

[0003]

However, in such a conventional ion plating deposition apparatus 40, since the high-frequency ring 46 is located near the deposition source 44,
Although the ionization efficiency of the vapor deposition material is increased and the film can be densified, there is a problem that a compound film having desired characteristics cannot be obtained because the high-frequency ring 46 causes decomposition of the vapor deposition compound simultaneously with the ionization process. In addition, when a dielectric material is used as a vapor deposition material, as the film is formed on the substrate, electric charges charged on the substrate and the wall surface of the vacuum chamber cause a discharge, thereby generating contaminants and leaving a discharge mark on the substrate. was there. The present invention has been made in view of the above problems, and enables formation of a dense and undamaged vapor-deposited film, and a desired dielectric film even when a dielectric material is used as a vapor-deposited material. It is an object of the present invention to provide an ion plating vapor deposition apparatus that can easily form a film.

[0004]

In order to solve the above-mentioned problems, the invention according to claim 1 is directed to a plasma reaction by a high-frequency ring provided between a deposition target substrate and a deposition material vaporized from a deposition source. In an ion plating deposition apparatus that forms a film by depositing a deposition substance on a substrate to form a film, a high frequency power supply was connected to a substrate dome holding the substrate, and a DC power supply was connected behind the substrate dome. It features a metal dome. According to this, in addition to the high-frequency ring for ionizing the deposition material, by connecting the high-frequency power supply to the substrate dome,
Activating the ionized deposition material and the introduced plasma reaction gas near the substrate to assist the reaction process, and connected a DC power supply to the metal dome provided behind the substrate dome, so that the electric field accelerated the compactness on the substrate. A desired film can be formed. Further, the invention according to claim 2,
The ion plating deposition apparatus according to claim 1, wherein a capacitor is provided between the substrate dome and a high-frequency power supply. According to this, since the substrate dome is DC-insulated by the capacitor,
It is possible to uniformly charge the entire substrate dome,
By preventing discharge between the substrate dome and the substrate, a deposited film without damage can be formed.

[0005]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on illustrated embodiments. In the present embodiment, a dielectric film is deposited on a substrate using an ion plating vapor deposition apparatus to form an optical thin film having no light absorption. FIG. 1 is a diagram showing a schematic configuration of an ion plating steaming apparatus 10 according to the present invention. In the ion plating deposition apparatus 10 in FIG. 1, a deposition source 14 is disposed in a lower part in a vacuum chamber 12, and a high frequency ring 16 for applying a high frequency from a high frequency power supply 26 is disposed in an upper part thereof. Above the substrate 2
0 is held and arranged on the substrate dome 18. A characteristic configuration of the ion plating vapor deposition apparatus 10 of the present embodiment is that a high-frequency power supply 28 is connected to the substrate dome 18 to which a DC power supply is conventionally connected, and the high-frequency power supply 28 and the substrate dome 18 are connected to each other. A point at which a capacitor 30 is interposed therebetween, and behind the substrate dome 18 (above the substrate dome 18 in the vacuum chamber 12 in FIG. 1 and located behind the substrate dome 18 when viewed from the vapor deposition source 14). Is that a DC power supply electrode 22 as a metal dome is arranged, and a negative voltage is applied from a DC power supply 32.

Next, the operation of forming a film on the surface of the substrate 20 using the above-described ion plating deposition apparatus 10 will be described. In forming a film on the substrate 20, a plasma reaction gas is introduced into the vacuum chamber 12 from the gas inlet 24. As the plasma reaction gas, oxygen, argon, nitrogen or the like is introduced. Although the evaporation source 14 containing the evaporation material is heated by an electron gun (not shown) to evaporate the evaporation material, it is needless to say that the evaporation source 14 may be evaporated using resistance heating. good. As described above, when a high frequency is applied to the high-frequency ring 16 in the vacuum chamber 12 into which the plasma reaction gas has been introduced, plasma is generated, and the deposition material evaporated from the deposition source 14 and the introduced plasma reaction gas are ionized and ionized. You. In the vicinity of the substrate 20, the deposition material and the plasma reaction gas are further activated by the high frequency from the high frequency power supply 28 connected to the substrate dome 18, and the direct current power supply 32
A dense film can be formed on the surface of the substrate 20 by the electric field acceleration by the DC power supply electrode 22 to which is connected. Here, a general 13.56 MHz high frequency power supply is used, but the present invention is not limited to this.
Further, the substrate dome 18 is connected to the high-frequency power source 2 as described above.
8, but is insulated from the direct current because of the interposition of the capacitor 30.
It is possible to uniformly charge the whole, and it is possible to prevent a discharge generated between the substrate dome 18 and the substrate 20. Further, in the present embodiment, the ion vapor deposition method using the plasma reaction by the high-frequency ring 16 is used. However, this method is more expensive than the ion vapor deposition method using an ion gun in terms of introduction cost and running cost of the apparatus. There is an advantage that it is excellent.

As described above, according to the above-described embodiment, the high-frequency ring 16 is provided above the evaporation source 14,
A base dome 18 to which a high-frequency power supply 28 is connected via a capacitor 30 is provided above the base dome 18. A DC power supply electrode 22 to which a DC power supply is connected is provided behind the substrate dome 18.
Is provided, a dense and undamaged deposited film can be formed, and a desired dielectric film can be easily formed even when a dielectric material is used as a deposition material. In the above embodiment, a dielectric film is deposited on a substrate to form an optical thin film having no light absorption. However, the present invention is not limited to this, and is applicable to various kinds of film formation. can do.

[0008]

As described above, according to the first aspect of the present invention, a high-frequency power source is connected to the substrate dome in addition to the high-frequency ring for ionizing the deposition material, so that the vicinity of the substrate can be reduced. Activating the ionized deposition material and the plasma reaction gas to be introduced to assist the reaction process, and connected a DC power supply to the metal dome provided behind the substrate dome, so that the electric field accelerated the A desired film can be formed. Claim 2
According to the invention described in (1), since the substrate dome is DC-insulated by the capacitor, it is possible to uniformly charge the entire substrate dome, and to prevent discharge between the substrate dome and the substrate, thereby preventing damage. It is possible to form a deposited film without any defects.

[Brief description of the drawings]

FIG. 1 is a diagram showing a schematic configuration of an ion plating deposition apparatus according to the present invention.

FIG. 2 is a schematic configuration diagram of a conventional ion plating vapor deposition apparatus using a high-frequency coil.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Ion plating vapor deposition apparatus 12 Vacuum tank 14 Vapor deposition source 16 High frequency ring 18 Substrate dome 20 Substrate 22 DC power supply electrode 24 Gas inlet 26, 28 High frequency power supply 30 Capacitor 32 DC power supply

Claims (2)

[Claims] An evaporation material vaporized from an evaporation source is ionized by a plasma reaction by a high-frequency ring provided between a substrate to be formed and the evaporation source, and the evaporation material is deposited on the substrate to form a film. In the ion plating deposition apparatus, a high frequency power supply is connected to a substrate dome holding the substrate, and a metal dome connected to a DC power supply is provided behind the substrate dome. 2. The ion plating deposition apparatus according to claim 1, wherein a capacitor is provided between the substrate dome and a high frequency power supply.