JPS63241162A - High frequency ion plating device - Google Patents

Abstract

PURPOSE:To efficiently coat the surface of a base plate with a clean homogeneous film by impressing high frequency electric power to the base plate disposed in an evacuated chamber to generate glow discharge and ionizing the particles evaporated from an evaporation source. CONSTITUTION:From a gas supply device 3, Ar-gas, etc., is supplied into the evacuated chamber 1 provided with an evacuating equipment 2, and the high frequency electric power is impressed to the base plate 9 on a base plate holder 8 from a high frequency electric power source 13 through a matching circuit 12 to generate glow discharge. And, the material to be evaporated in a crucible 4 disposed confronting the base plate 9 is beaten by the electron beam from an electron gun 5 through a deflector 7, and the material is evaporated. The evaporated particles are ionized by the above-mentioned glow discharge. A negative bias voltage is impressed to the base plate 9 through a direct electric power source 10'. By this bias voltage, the ionized evaporated particles are accelerated and allowed to collide against the surface of the base plate 9 to form film.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high-frequency ion plating apparatus that is capable of depositing a high-quality film.

[Prior Art 1] Fig. 2 schematically shows a high frequency ion plating apparatus. In the figure, 1 is the evacuated chamber (vacuum chamber), 2
is the exhaust device if, and 3 is the gas supply device.

Numeral 4 is a crucible, which contains an evaporative substance and serves as an evaporation source. 5 is an electron gun, 6 is an electron gun power supply, 7 is a deflector, 8
is a substrate holder made of conductive material. 9 is the board,
10 is a DC power supply, 11 is an RF electrode (high frequency electrode), 12
is a matching circuit that matches the impedance on the load side and the power supply side. 13 is a high frequency power source.

In such an apparatus, the inside of the chamber 1 to be evacuated is evacuated to, for example, about 101 to 1 O-8 Torr using the exhaust bag M2. Next, for example, Ar gas (Nz gas or the like may be used) is introduced into the exhaust chamber from the gas supply device 3 until the pressure inside the exhaust chamber reaches about 10-4 Torr. Next, when high-wave power from the high frequency power supply 13 to the RF'l pole 11 is applied through the matching circuit 12, a glow discharge is generated in the evacuated chamber. In this state, by applying a negative DC voltage from the DC power supply 10 to the substrate holder 8 and further operating the electron gun power supply 6 and deflector 7, the electron beam from the electron gun 5 is applied to the evaporated material in the crucible 4. to evaporate the evaporated substance. The evaporated particles are ionized by glow discharge. The ionized evaporated particles are! , is accelerated by the negative DC voltage applied to the curtain plate boulder 8, moves toward the substrate 9, and adheres to the substrate in the form of a film.

[Problem to be Solved by the Invention 1] Now, in such an apparatus, the RF electrode 11 for generating glow discharge between the evaporation source in the evacuated chamber and the substrate 9.
is installed, but the following problems occur.

(1) Evaporated particles from the evaporation source are ionized by glow discharge, and among the ionized particles, particles whose flying light is not obstructed by the RFffi pole 11 adhere to the substrate 9;
What is obstructed is not attached.

Therefore, when viewed from the evaporation source side, the film thickness is different between the part of the substrate 9 that is in the shadow of the RF electrode set 1 and the part that is not, and when viewed from the entire film deposited on the substrate. Spots appear here and there.

(2> When the ionized particles collide with the RF'ri electrode, a sputtering phenomenon occurs, and particles of the metal material forming the RF group electrode fly out and adhere to the substrate 9.

Generally, the RF set electrode is made of stainless steel or the like, and it is extremely rare that the material is the same as the evaporation material, so the film deposited on the substrate will be contaminated by particles of the evaporation material produced by the sputtering.

(3) When forming films on a large number of substrates at once or when forming layers on large substrates, the evacuated chamber must be enlarged, but in that case, an RF
ffiffi must be provided.

In this way, the impedance on the load side becomes considerably large, making the matching operation of the matching circuit 12 difficult. In addition, since the RF electrode assembly becomes quite heavy, a support must be provided to support it, resulting in a complicated structure. Also, for that purpose,
The trends of the problems explained in (1) and (2) above are becoming more and more noticeable.

The present invention is aimed at solving such problems.

[Means for Solving the Problems] Therefore, in the present invention, high frequency power is applied to the substrate in the evacuated chamber to generate glow lightning and ionize the evaporated particles from the evaporation source.

[Embodiment] FIG. 1 is a schematic diagram of a high frequency ion plating apparatus showing an embodiment of the present invention.

Components in the figure that are numbered the same as those used in FIG. 2 are the same components.

In this embodiment, high frequency power is applied from a high frequency power supply 13 to the substrate holder 8 via a matching circuit 12 without using the RF electrode set used in the conventional high frequency ion plating apparatus shown in FIG. It is made like this. Further, the DC power supply 10' is configured such that the magnitude of the voltage applied to the substrate holder 8 can be varied, and the polarity of the applied voltage can also be changed.

In such an apparatus, the inside of the chamber 1 to be exhausted is evacuated to, for example, 10'1 to 10 (TOrr) by the exhaust device 2. Next, the gas supply device 3 supplies, for example, Ar gas (N2 gas, etc.). is introduced into the exhaust chamber until the inside of the exhaust chamber reaches about 10'Torr.Next, when high frequency power is applied from the high frequency power supply 13 to the substrate holder 8 via the matching circuit 12, a glow discharge is generated in the exhaust chamber. In this state, by applying a DC voltage from the DC power source 10 to the substrate holder 8 and further activating the electron gun power source 6 and deflector 7, the electron beam from the electron Fc 5 is directed to the crucible 4.
to evaporate the evaporated material. The evaporated particles are ionized by the glow discharge. The ionized evaporated particles are accelerated by the negative DC voltage applied to the substrate holder 8, move toward the substrate 9, and adhere to the substrate in the form of a film.

Now, above) I! A negative DC voltage is applied from the power source 10- to the substrate holder 8 to accelerate the ionized evaporated particles toward the substrate, but even if such a voltage is not applied,
Ionized evaporated particles can be accelerated toward the substrate and deposited on the substrate in the form of a film. That is, since high-frequency power is applied to the substrate 9 from the high-frequency power supply 13 through the substrate holder 8, positive and negative power are alternately applied to the substrate at high speed, and the wall of the evacuated chamber 1 is connected to the ground. Located at electric potential. Since the substrate 9 is considerably heavier in area than the entire mold of the evacuated chamber 1, the number of electrons that fly in and reach the substrate when the substrate is at a positive potential is different from that when the substrate is at a negative potential. If we compare the reasons why ions arrive at the substrate at a speed of /υ, the number of electrons is considerably larger due to mass. On the other hand, since the wall of the evacuated chamber 1 has a fairly large area, the number of electrons and the number of ions reaching the wall of the evacuated chamber are approximately equal, regardless of the quality φ. For these reasons, an electrically negative voltage is applied to the substrate 9 or the substrate boulder 8 (this voltage is referred to as a bias voltage),
The walls of the evacuated chamber 1 can be considered to be in an electrically neutral state. Due to such a bias voltage, the ionized evaporated particles are accelerated toward the substrate and deposited on the substrate. Therefore, the negative DC voltage from the DC power supply 10' can be seen as having the effect of increasing the degree of acceleration.
By appropriately controlling the magnitude of the voltage, it is possible to achieve an appropriate acceleration state.

By the way, high frequency power is applied to the substrate holder 8, that is, alternately,
Since power whose polarity changes rapidly between positive and negative is applied, ions and electrons alternately reach the substrate 9 at high speed. Therefore, if the substrate 9 is made of insulating material 44R1, for example, even if the substrate is charged up and negatively charged by the ions that reach the substrate, it will be electrically neutralized by the electrons that reach the substrate. be done. Therefore, the negative charge charged on the substrate is prevented from being discharged to the substrate holder 8,
It is possible to avoid a phenomenon in which a part of the adhered film, particularly a part of the film adhered to the edge portion of the substrate 9, peels off during the discharge.

Further, as the electrons reach the substrate, the substrate is appropriately heated, and the substrate is placed on its back against an appropriate hot stone.

Therefore, the substrate can be heated without providing any special heating means, and therefore the adhesion of evaporated particles to the substrate can be promoted.

Furthermore, as the electrons reach the substrate, the film attached to the (j) plate is appropriately annealed, thereby improving the distortion of the film.

Incidentally, the ions also fly to the substrate holder 8 holding the substrate 9, and the substrate holder is sputtered by the ions, particles of the material forming the holder adhere to the substrate, and the film attached to the substrate is removed. However, if the substrate holder is made of the same material as the evaporated material, such contamination problems are eliminated.

[Effects of the Invention] The present invention provides an apparatus that ionizes evaporation particles from an evaporation source by generating a glow discharge in an evacuated chamber, and attaches the evaporation particles to a substrate. Since high frequency power was applied to the substrate without providing an RF main electrode in between, the evaporated particles from the evaporation source were
The flying light is no longer obstructed by the W pole, and therefore no spots occur on the film deposited on the substrate.

In addition, the ionized particles will not collide with the RF main electrode, and the particles of the material that makes up the RF main electrode will not fly out from the RF main electrode due to sputtering. There will be no more things to do.

Furthermore, when forming films on many substrates at once or on large substrates, the evacuated chamber must be enlarged, but even in that case, the RF main body must be of a commensurate size. Since there is no need to provide electrodes, the matching operation of the matching circuit is 5! There is no haze, and there is no need to provide a pillar to support the RF main electrode, so the structure is not complicated.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a high frequency ion plating apparatus showing an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional high frequency ion plating apparatus.

Claims (1)

[Claims] A high-frequency ion plating device that applies high-frequency power to a substrate in an evacuated chamber to generate glow discharge and ionize evaporated particles from an evaporation source.