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IL96971A0 - Solid state radiation detector - Google Patents

Solid state radiation detector

Info

Publication number
IL96971A0
IL96971A0 IL96971A IL9697191A IL96971A0 IL 96971 A0 IL96971 A0 IL 96971A0 IL 96971 A IL96971 A IL 96971A IL 9697191 A IL9697191 A IL 9697191A IL 96971 A0 IL96971 A0 IL 96971A0
Authority
IL
Israel
Prior art keywords
solid state
radiation detector
state radiation
detector
solid
Prior art date
Application number
IL96971A
Other languages
English (en)
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of IL96971A0 publication Critical patent/IL96971A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
IL96971A 1990-02-09 1991-01-16 Solid state radiation detector IL96971A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47820190A 1990-02-09 1990-02-09

Publications (1)

Publication Number Publication Date
IL96971A0 true IL96971A0 (en) 1992-03-29

Family

ID=23898935

Family Applications (1)

Application Number Title Priority Date Filing Date
IL96971A IL96971A0 (en) 1990-02-09 1991-01-16 Solid state radiation detector

Country Status (7)

Country Link
US (1) US5420452A (xx)
EP (1) EP0441521B1 (xx)
JP (1) JPH04214669A (xx)
KR (1) KR0162903B1 (xx)
CA (1) CA2034118A1 (xx)
DE (1) DE69126221T2 (xx)
IL (1) IL96971A0 (xx)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220170A (en) * 1985-12-11 1993-06-15 General Imaging Corporation X-ray imaging system and solid state detector therefor
US5381013A (en) * 1985-12-11 1995-01-10 General Imaging Corporation X-ray imaging system and solid state detector therefor
US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JP3431995B2 (ja) * 1993-06-03 2003-07-28 キヤノン株式会社 撮像装置
TW264575B (xx) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5606165A (en) * 1993-11-19 1997-02-25 Ail Systems Inc. Square anti-symmetric uniformly redundant array coded aperture imaging system
IL111436A (en) * 1993-11-19 1998-07-15 Ail Systems Inc Gamma ray imaging system
JP3066944B2 (ja) 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US5498880A (en) * 1995-01-12 1996-03-12 E. I. Du Pont De Nemours And Company Image capture panel using a solid state device
US5619033A (en) * 1995-06-07 1997-04-08 Xerox Corporation Layered solid state photodiode sensor array
DE19524857C2 (de) * 1995-07-07 1998-04-09 Siemens Ag Bilddetektor
JP3703217B2 (ja) * 1995-09-04 2005-10-05 キヤノン株式会社 Ｘ線検出装置
TW331667B (en) * 1995-09-05 1998-05-11 Canon Kk Photoelectric converter
JP3416351B2 (ja) * 1995-09-28 2003-06-16 キヤノン株式会社 光電変換装置及びその駆動方法、それを用いたｘ線撮像装置及びその駆動方法
FR2750821B1 (fr) * 1996-07-05 1998-09-11 Commissariat Energie Atomique Procede et dispositif pour la prise d'images numeriques avec controle et optimisation du temps d'exposition de l'objet a des rayonnements x ou y
US5753921A (en) * 1996-07-16 1998-05-19 Eastman Kodak Company X-ray imaging detector with limited substrate and converter
GB2317742A (en) * 1996-09-30 1998-04-01 Sharp Kk Imaging device
US5834782A (en) * 1996-11-20 1998-11-10 Schick Technologies, Inc. Large area image detector
US5973311A (en) * 1997-02-12 1999-10-26 Imation Corp Pixel array with high and low resolution mode
US6013916A (en) * 1997-07-23 2000-01-11 The Regents Of The University Of Michigan Flat panel dosimeter
JP3649907B2 (ja) * 1998-01-20 2005-05-18 シャープ株式会社 二次元画像検出器およびその製造方法
JP3976915B2 (ja) * 1998-02-09 2007-09-19 シャープ株式会社 二次元画像検出器およびその製造方法
JP3549039B2 (ja) * 1998-03-23 2004-08-04 シャープ株式会社 二次元画像検出器
JP2000131444A (ja) * 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
JP3430040B2 (ja) * 1998-11-19 2003-07-28 シャープ株式会社 二次元画像検出器およびその製造方法
JP3847494B2 (ja) * 1998-12-14 2006-11-22 シャープ株式会社 二次元画像検出器の製造方法
WO2000039858A2 (en) 1998-12-28 2000-07-06 Fairchild Semiconductor Corporation Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
US6051867A (en) * 1999-05-06 2000-04-18 Hewlett-Packard Company Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
US20030165211A1 (en) * 2002-03-01 2003-09-04 Lee Grodzins Detectors for x-rays and neutrons
US20050117683A1 (en) * 2000-02-10 2005-06-02 Andrey Mishin Multiple energy x-ray source for security applications
US7538325B2 (en) * 2000-02-10 2009-05-26 American Science And Engineering, Inc. Single-pulse-switched multiple energy X-ray source applications
US20080211431A1 (en) * 2000-02-10 2008-09-04 American Science And Engineering, Inc. Pulse-to-Pulse-Switchable Multiple-Energy Linear Accelerators Based on Fast RF Power Switching
US20050105665A1 (en) * 2000-03-28 2005-05-19 Lee Grodzins Detection of neutrons and sources of radioactive material
US8325871B2 (en) 2000-03-28 2012-12-04 American Science And Engineering, Inc. Radiation threat detection
JP2001313384A (ja) * 2000-04-28 2001-11-09 Shimadzu Corp 放射線検出器
US7902546B2 (en) * 2000-08-08 2011-03-08 Translucent, Inc. Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
KR20010008150A (ko) * 2000-11-13 2001-02-05 정두락 박막트랜지스터형 광센서를 이용한 발광부 착탈형, 다기능디지탈 엑스레이 실시간, 평판영상기.
KR100396696B1 (ko) * 2000-11-13 2003-09-02 엘지.필립스 엘시디 주식회사 저저항 배선을 갖는 액정 디스플레이 패널
US6555934B2 (en) * 2000-12-18 2003-04-29 Ge Medical Systems Global Technology Company, Llc Method and apparatus for control of large-area ground plane potentials
JP3678162B2 (ja) * 2001-04-12 2005-08-03 株式会社島津製作所 放射線検出装置
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
DE10333841B4 (de) * 2003-07-24 2007-05-10 Infineon Technologies Ag Verfahren zur Herstellung eines Nutzens mit in Zeilen und Spalten angeordneten Halbleiterbauteilpositionen und Verfahren zur Herstellung eines Halbleiterbauteils
US7253391B2 (en) * 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
JP2005121415A (ja) * 2003-10-15 2005-05-12 Shimadzu Corp 粒度分布測定装置
US7010084B1 (en) 2004-08-18 2006-03-07 Ge Medical Systems Global Technology Company, Llc Light detector, radiation detector and radiation tomography apparatus
JP4817636B2 (ja) * 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4773768B2 (ja) * 2005-08-16 2011-09-14 キヤノン株式会社 放射線撮像装置、その制御方法及び放射線撮像システム
GB0517741D0 (en) * 2005-08-31 2005-10-12 E2V Tech Uk Ltd Image sensor
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
EP2183780A4 (en) 2007-08-02 2010-07-28 Applied Materials Inc THIN FILM TRANSISTORS USING THIN FILM SEMICONDUCTOR MATERIALS
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8483008B2 (en) * 2008-11-08 2013-07-09 Westerngeco L.L.C. Coil shooting mode
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
US7947959B2 (en) * 2009-04-21 2011-05-24 Honeywell International Inc. Enhanced sensitivity solid state radiation detector
CN107425020B (zh) 2009-06-17 2019-10-18 密执安州立大学董事会 辐射传感器
KR101733718B1 (ko) 2009-09-24 2017-05-10 어플라이드 머티어리얼스, 인코포레이티드 소스 및 드레인 금속 식각을 위해 습식 프로세스를 이용하여 금속 산화물 또는 금속 산질화물 ｔｆｔ들을 제조하는 방법들
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
TWI545788B (zh) 2014-10-03 2016-08-11 財團法人工業技術研究院 板材與模組結構
CN107765289B (zh) * 2017-11-06 2024-06-25 天津大学 基于柔性pin二极管的辐照强度检测器
KR102660806B1 (ko) * 2019-02-26 2024-04-26 에이에스엠엘 네델란즈 비.브이. 이득 엘리먼트를 갖는 하전 입자 검출기
WO2021208063A1 (zh) * 2020-04-17 2021-10-21 京东方科技集团股份有限公司 平板探测器基板及其制作方法、平板探测器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011454A (en) * 1975-04-28 1977-03-08 General Electric Company Structured X-ray phosphor screen
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
FR2469805A1 (fr) * 1979-11-09 1981-05-22 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
FR2523371A1 (fr) * 1982-03-10 1983-09-16 Contellec Michel Le Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element
US4467342A (en) * 1982-07-15 1984-08-21 Rca Corporation Multi-chip imager
US4670765A (en) * 1984-04-02 1987-06-02 Sharp Kabushiki Kaisha Semiconductor photodetector element
EP0163956A3 (en) * 1984-05-04 1988-04-06 Energy Conversion Devices, Inc. Intergrated radiation sensing array
US4675739A (en) * 1984-05-04 1987-06-23 Energy Conversion Devices, Inc. Integrated radiation sensing array
US4660095A (en) * 1984-05-04 1987-04-21 Energy Conversion Devices, Inc. Contact-type document scanner and method
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US4689487A (en) * 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
JPH0677079B2 (ja) * 1984-09-18 1994-09-28 コニカ株式会社 放射線画像情報読取装置
JPH06101576B2 (ja) * 1985-02-25 1994-12-12 日立造船株式会社 アモルフアスシリコンｘ線センサ
JPS61196572A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
JPS61196571A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
JPS61196570A (ja) * 1985-02-25 1986-08-30 Hitachi Zosen Corp アモルフアスシリコンｘ線センサ
FR2598250B1 (fr) * 1986-04-30 1988-07-08 Thomson Csf Panneau de prise de vue radiologique, et procede de fabrication
US4785186A (en) * 1986-10-21 1988-11-15 Xerox Corporation Amorphous silicon ionizing particle detectors
US4982095A (en) * 1987-09-04 1991-01-01 Hitachi, Ltd. Multi-element type radiation detector

Also Published As

Publication number Publication date
CA2034118A1 (en) 1991-08-10
KR0162903B1 (ko) 1999-05-01
DE69126221D1 (de) 1997-07-03
EP0441521A1 (en) 1991-08-14
US5420452A (en) 1995-05-30
JPH04214669A (ja) 1992-08-05
KR910015866A (ko) 1991-09-30
EP0441521B1 (en) 1997-05-28
DE69126221T2 (de) 1997-11-20

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