GB1015985A - Semiconductor materials and applications thereof - Google Patents
Semiconductor materials and applications thereofInfo
- Publication number
- GB1015985A GB1015985A GB22580/62A GB2258062A GB1015985A GB 1015985 A GB1015985 A GB 1015985A GB 22580/62 A GB22580/62 A GB 22580/62A GB 2258062 A GB2258062 A GB 2258062A GB 1015985 A GB1015985 A GB 1015985A
- Authority
- GB
- United Kingdom
- Prior art keywords
- per cent
- carbon
- boron
- compositions
- weight per
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 abstract 11
- 229910052796 boron Inorganic materials 0.000 abstract 9
- 239000000203 mixture Substances 0.000 abstract 9
- 239000000654 additive Substances 0.000 abstract 5
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- 239000010936 titanium Substances 0.000 abstract 3
- 229910052719 titanium Inorganic materials 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- -1 alkyl boron compound Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 238000007731 hot pressing Methods 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The Specification relates to the use in semiconductor devices of various boron-carbon and boron-carbon-based compositions. It describes their use in thermo-electric elements, thermistors, point-contact rectifiers, and frequency sensitive capacitors. These compositions contain 6.5 - 17 weight per cent carbon and may contain one or more additional elements selected from all parts of the Periodic Table with the exception of the halogens and the rare gases. Table I in the Specification sets out many additives and the proportions in which they may be used. The lower limit for the additives is 10-13 weight per cent; the upper limit, which varies slightly with the nature of the additive, is never more than 25 weight per cent for a single additive or more than 48 weight per cent for combinations of additives. The compositions may be formed by hot-pressing mixtures of the powdered elements. Decomposition of a mixture of an alkyl boron compound with or without diborane or a boron trihalide will also yield carbon boron mixtures of the required proportions, additional elements such as aluminium, titanium, iron, germanium, and silicon being incorporated by co-deposition of their hydrides or halides. Specific compositions disclosed are: (1) 93.49% B, 6.5% C, 0.01% Ge; (2) 89.9% B, 10% C, 0.1% Si; (3) 88.75% B, 11% C, 0.2% Si, 0.05% Ti; (4) 88% B, 10% C, 2% Ce; (5) 86% B, 7% C, 7% Be; (6) 85.6% B, 12% C, 1.5% Ti, 0.9% Si; (7) 85% B, 15% C; and (8) 83% B, 12% C, 5% Ge. Three compositions are disclosed in which the value of the carbon content within the range 6.5 - 17% is not specified but which contain respectively 0.0001 atom per cent Be, 0.00001 atom per cent Si, and 0.001 weight per cent Mn.ALSO:Air or another oxygen source and a stream of liquid white phosphorus are fed into a furnace for the production of phosphoric anhydride. The hot exit gas stream containing the phosphoric anhydride is cooled by passing it over a surface containing thermoelectric elements consisting of carbon-boron or carbon-boron-base compositions containing 6.5-17 wt. per cent carbon. The furnace described has four thermoelectric units connected in series so that the heat absorbed gives a useful electrical output such as that required for a motor or a resistive load. Alternatively power may be fed into the thermoelectric elements of the phosphorus burner or similar furnace so that with one direction of current flow the units act as a Peltier cooler and with the opposite direction of current flow the junctions in contact with the gas-stream provide heat to initiate a reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB22580/62A GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB22580/62A GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1015985A true GB1015985A (en) | 1966-01-05 |
Family
ID=10181714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB22580/62A Expired GB1015985A (en) | 1962-06-12 | 1962-06-12 | Semiconductor materials and applications thereof |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1015985A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0288022A2 (en) * | 1987-04-22 | 1988-10-26 | Sharp Kabushiki Kaisha | Superconductive apparatus |
| US5130691A (en) * | 1988-10-05 | 1992-07-14 | Sharp Kabushiki Kaisha | Superconductive apparatus having a superconductive device in a airtight package |
| WO2003017389A2 (en) * | 2001-08-13 | 2003-02-27 | Motorola, Inc. | High performance thermoelectric material |
| EP1289026A2 (en) * | 2001-08-31 | 2003-03-05 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
-
1962
- 1962-06-12 GB GB22580/62A patent/GB1015985A/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0288022A2 (en) * | 1987-04-22 | 1988-10-26 | Sharp Kabushiki Kaisha | Superconductive apparatus |
| EP0288022A3 (en) * | 1987-04-22 | 1990-04-04 | Sharp Kabushiki Kaisha | Superconductive apparatus |
| US5166777A (en) * | 1987-04-22 | 1992-11-24 | Sharp Kabushiki Kaisha | Cooling apparatus for superconducting devices using Peltier effect cooling element |
| US5130691A (en) * | 1988-10-05 | 1992-07-14 | Sharp Kabushiki Kaisha | Superconductive apparatus having a superconductive device in a airtight package |
| WO2003017389A2 (en) * | 2001-08-13 | 2003-02-27 | Motorola, Inc. | High performance thermoelectric material |
| WO2003017389A3 (en) * | 2001-08-13 | 2003-04-10 | Motorola Inc | High performance thermoelectric material |
| US6677515B2 (en) | 2001-08-13 | 2004-01-13 | Motorola, Inc. | High performance thermoelectric material and method of fabrication |
| EP1289026A2 (en) * | 2001-08-31 | 2003-03-05 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
| EP1289026A3 (en) * | 2001-08-31 | 2004-04-21 | Basf Aktiengesellschaft | Thermoelectric active materials and Generators and Peltier devices comprising them |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Abeles et al. | Thermal conductivity of Ge-Si alloys at high temperatures | |
| US3902923A (en) | Thermoelectric materials | |
| Mohanraman et al. | Influence of In doping on the thermoelectric properties of an AgSbTe 2 compound with enhanced figure of merit | |
| US3090207A (en) | Thermoelectric behavior of bismuthantimony thermoelements | |
| Okumiya et al. | The Formation of κ and κ′-Al 2 O 3 from the Dehydration of Tohdite 5Al 2 O 3· H 2 O | |
| Wood et al. | Phase boundary mapping of tin‐doped ZnSb reveals thermodynamic route to high thermoelectric efficiency | |
| GB1015985A (en) | Semiconductor materials and applications thereof | |
| JPS61149453A (en) | Thermocouple alloy, thermocouple semiconductive material using the same and thermocouple apparatus | |
| Wild et al. | Combined infra-red and X-ray studies of β-silicon nitride and β′-sialons | |
| US3008797A (en) | Ternary selenides and tellurides of silver and antimony and their preparation | |
| GB1092637A (en) | Silicon nitride products | |
| Candolfi et al. | Tetrahedrites: prospective novel thermoelectric materials | |
| GB1005425A (en) | Improvements in boron nitride | |
| GB1134964A (en) | Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals | |
| GB708823A (en) | Contact mass for use in the preparation of organo halogenosilanes | |
| Christakudi et al. | Thermoelectric power of (GeTe) 1− x (Bi2Te3) x solid solutions (0≦ x≦ 0.05) in the temperature interval 80 to 350 K | |
| Štourač et al. | Phonon thermal conductivity of amorphous selenium doped by germanium | |
| Datta | Polymorphism of LiGa5O8 and of LiGa5O8‐MgGa2O4Solid Solutions | |
| Wood et al. | Refractory materials for high-temperature thermoelectric energy conversion | |
| McCAWLEY et al. | NaF‐KF‐K2NbF7 Fused Salt Temperature‐Solubility Diagram | |
| CN106684236A (en) | Method for preparing high-performance Cu2GeTe3 thermoelectric material | |
| US3397043A (en) | Single phase ternary semiconducting compounds of silver or copper, thallium, and sulfur or selenium | |
| GB889480A (en) | Thermoelements and devices embodying them | |
| GB1089746A (en) | Ferromagnetic compounds | |
| Ponnambalam et al. | Thermoelectric properties and electronic structure calculations of low thermal conductivity Zintl phase series M16X11 (M= Ca and Yb; X= Sb and Bi) |