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Abeles et al., 1962 - Google Patents

Thermal conductivity of Ge-Si alloys at high temperatures

Abeles et al., 1962

Document ID
18276701559667141290
Author
Abeles B
Beers D
Cody G
Dismukes J
Publication year
Publication venue
Physical review

External Links

Snippet

The thermal conductivity of several Ge-Si alloys was determined in the temperature range 300 to 1200 K. A strikingly large decrease in the lattice thermal conductivity in the entire temperature range was found upon alloying. The temperature dependence and magnitude …
Continue reading at journals.aps.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details

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