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FR2471054A1 - Dispositif lumineux a diode - Google Patents

Dispositif lumineux a diode Download PDF

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Publication number
FR2471054A1
FR2471054A1 FR8024906A FR8024906A FR2471054A1 FR 2471054 A1 FR2471054 A1 FR 2471054A1 FR 8024906 A FR8024906 A FR 8024906A FR 8024906 A FR8024906 A FR 8024906A FR 2471054 A1 FR2471054 A1 FR 2471054A1
Authority
FR
France
Prior art keywords
substrate plate
light
diode
diode wafer
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8024906A
Other languages
English (en)
Inventor
Helmut Sautter
Georg Zimmermann
Friedrich Prinzhauser
Horst Magenau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2471054A1 publication Critical patent/FR2471054A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

A.LE DISPOSITIF LUMINEUX A DIODE COMPREND UN SUBSTRAT EN FORME DE PLAQUE 5, UNE PLAQUETTE CONSTITUANT UNE DIODE LUMINEUSE 14 ET UN DISPOSITIF DIFFUSEUR DE LUMIERE. B.L'ELEMENT DIFFUSEUR EST FAIT D'UNE RESINE TRANSPARENTE COULEE 16, RECOUVRANT LA DIODE 14 JUSQU'AU SUBSTRAT 5 LUI-MEME TRANSPARENT, A QUI ON DONNE UNE SURFACE CONVEXE ET SUR QUI ON APPLIQUE UNE COUCHE REFLECHISSANTE 17. C.CETTE DISPOSITION PERMET D'OBSERVER LA LUMINOSITE DE TOUS LES COTES ET SIMPLIFIE LA FABRICATION.

Description

L'invention concerne un dispositif lumineux à diode comprenant une
plaquette de diode lumineuse disposée sur une
plaque support et un élément diffuseur de lumière associé à-
cette plaquette.
Dans un dispositif connu de ce genre, l'élément
diffuseur de lumière est constitué comme un élément de construc-
tion séparé qui est monté après coup directement sur la plaquette de diode dans la direction du rayonnement lumineux. La plaque
substrat est faite d'un matériau opaque. L'élément de construc-
tion indépendant doit être fixé sur la plaque substrat au moyen d'éléments spéciaux de fixation. La plaquette de diode lumineuse doit être observée à partir de la face de la plaque substrat sur
laquelle est fixé l'élément diffuseur.
L'invention a pour objet un dispositif du genre décrit ci-dessus caractérisé en ce que l'élément diffuseur est constitué par un corps en résine transparente recouvrant la plaquette de diode jusqu'à la plaque substrat, dont la surface supérieure est essentiellement convexe, la plaque substrat étant
également faite d'une matière transparente, et une couche réflé-
chissante étant appliquée sur le corps en résine et le recouvrant
jusqu'à la plaque substrat.
Ce dispositif présente l'avantage d'une fabrication nettement simplifiée et moins coûteuse. La plaquette de diode peut alors en outre être observée à travers la plaque substrat
translucide.
La description ci-après se rapporte à un exemple de
réalisation du dispositif de l'invention, représenté au dessin
joint dans une vue en coupe perpendiculaire à la plaque substrat.
Dans la figure, sur une plaque substrat transparente 5, par exemple en verre, on applique, d'une part, une première piste conductrice transparente Ll en bioxyde d'étain ou oxyde d'indium et, d'autre part, une seconde piste conductrice opaque L2. Cette seconde piste L2 se compose d'une couche de base 4 en bioxyde d'étain ou oxyde d'indium, d'une couche intermédiaire 8 en étain ou indium, et une couche de revêtement 9 en or. Sur l'une des extrémités de la première piste conductrice Ll, est
collée une plaquette de diode lumineuse 14, au moyen d'un adhé-
sif conducteur. Un fil de liaison 15 en or assure une connexion conductrice entre la plaquette de diode 14 et la seconde piste
conductrice L2.
La plaquette de diode 14 et le fil de liaison 15 sont recouverts d'un corps en résine synthétique coulée 16, qui sert d'élément diffuseur de la lumière, et qui présente une surface supérieure essentiellement convexe faite, de préférence en résine au silicone. Ce corps en résine 16 est fabriqué par apport goutte à goutte et il sert en outre de protection pour
la plaquette 14 et le fil 15.
Il est en outre prévu, une couche de revêtement ré-
fléchissante 17, appliquée sur le corps en résine 16, par exem-
ple par argenture, application de vernis blanc, ou vaporisation d'aluminium. Grâce à cette couche réfléchissante 17, on obtient que la plaquette de diode 14 puisse être observée à travers la plaque substrat 5, la lumière étant renvoyée par la couche
réfléchissante 17.

Claims (2)

    R E V E N D I C A T I 0 N S ) Dispositif lumineux à diode comprenant sur une plaque substrat (5) une plaquette ou pastille de diode lumineuse (14) sur laquelle est prévu un élément diffuseur de la lumière, caractérisé en ce que l'élément diffuseur est constitué par un corps en résine coulée transparente (16) recouvrant la plaquette de diode (14) jusqu'à la plaque substrat (5), dont la surface supérieure est essentiellement convexe, la plaque substrat (5) étant également faite d'une matière transparente, et une couche réfléchissante (17) étant appliquée sur le corps en résine (16) et le recouvrant jusqu'à la plaque substrat (5).
  1. 2 ) Dispositif suivant la revendication 1, caracté-
    risé en ce que la plaquette de diode lumineuse (14) est collée,
    au moyen d'un adhésif électriquement conducteur, sur la pre-
    mière piste conductrice (Ll) en matière transparente, disposée
    sur la plaque substrat.
    ) Dispositif suivant l'une des revendications 1 ou
    2, caractérisé en ce que le corps en résine transparent est
    constitué en une résine de silicone (16).
  2. 40) Dispositif suivant l'une quelconque des reven-
    dications 1 à 3, caractérisé en ce que la première piste conduc-
    trice (Ll) est constituée en un oxyde métallique, tel que bi-
    oxyde d'étain ou oxyde d'indium.
    ) Dispositif suivant l'une quelconque des revendi-
    cations 1 à 4, caractérisé ence que la surface supérieure de la plaquette de diode (14), éloignée de la plaque substrat (5) est connectée, par un fil de liaison (15), à une seconde piste conductrice (L2). r
    ) Dispositif suivant l'une quelconque des revendi-
    cations 1 à 5, caractérisé en ce que la plaque substrat (5) est
    en verre.
FR8024906A 1979-11-30 1980-11-24 Dispositif lumineux a diode Withdrawn FR2471054A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2948252 1979-11-30

Publications (1)

Publication Number Publication Date
FR2471054A1 true FR2471054A1 (fr) 1981-06-12

Family

ID=6087279

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8024906A Withdrawn FR2471054A1 (fr) 1979-11-30 1980-11-24 Dispositif lumineux a diode

Country Status (3)

Country Link
JP (1) JPS5693382A (fr)
FR (1) FR2471054A1 (fr)
GB (1) GB2064865A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (de) 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement
US5990498A (en) * 1997-09-16 1999-11-23 Polaroid Corporation Light-emitting diode having uniform irradiance distribution
EP1244152A3 (fr) * 2001-01-26 2008-12-03 Toyoda Gosei Co., Ltd. Diode réflechissante émettrice de lumière, dispositif optique réflechissant et méthode de fabrication
WO2002090825A1 (fr) * 2001-04-23 2002-11-14 Lab. Sphere Corporation Dispositif d'eclairage faisant intervenir l'utilisation d'une diode electroluminescente
DE10133586A1 (de) * 2001-07-11 2003-01-23 Linde Ag Beleuchtungssystem für Warenpräsentationsmöbel
JP2004304041A (ja) * 2003-03-31 2004-10-28 Citizen Electronics Co Ltd 発光ダイオード

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Publication number Publication date
GB2064865A (en) 1981-06-17
JPS5693382A (en) 1981-07-28

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