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FR2471054A1 - DIODE LIGHT DEVICE - Google Patents

DIODE LIGHT DEVICE Download PDF

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Publication number
FR2471054A1
FR2471054A1 FR8024906A FR8024906A FR2471054A1 FR 2471054 A1 FR2471054 A1 FR 2471054A1 FR 8024906 A FR8024906 A FR 8024906A FR 8024906 A FR8024906 A FR 8024906A FR 2471054 A1 FR2471054 A1 FR 2471054A1
Authority
FR
France
Prior art keywords
substrate plate
light
diode
diode wafer
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8024906A
Other languages
French (fr)
Inventor
Helmut Sautter
Georg Zimmermann
Friedrich Prinzhauser
Horst Magenau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2471054A1 publication Critical patent/FR2471054A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

A.LE DISPOSITIF LUMINEUX A DIODE COMPREND UN SUBSTRAT EN FORME DE PLAQUE 5, UNE PLAQUETTE CONSTITUANT UNE DIODE LUMINEUSE 14 ET UN DISPOSITIF DIFFUSEUR DE LUMIERE. B.L'ELEMENT DIFFUSEUR EST FAIT D'UNE RESINE TRANSPARENTE COULEE 16, RECOUVRANT LA DIODE 14 JUSQU'AU SUBSTRAT 5 LUI-MEME TRANSPARENT, A QUI ON DONNE UNE SURFACE CONVEXE ET SUR QUI ON APPLIQUE UNE COUCHE REFLECHISSANTE 17. C.CETTE DISPOSITION PERMET D'OBSERVER LA LUMINOSITE DE TOUS LES COTES ET SIMPLIFIE LA FABRICATION.A. THE DIODE LUMINOUS DEVICE CONSISTS OF A PLATE-SHAPED SUBSTRATE 5, A PLATE CONSTITUTING A LIGHT-DIODE 14 AND A LIGHT-DIFFUSING DEVICE. B. THE DIFFUSER ELEMENT IS MADE OF A TRANSPARENT CAST RESIN 16, COVERING DIODE 14 UP TO SUBSTRATE 5, HIMSELF TRANSPARENT, TO WHICH IS GIVEN A CONVEX SURFACE AND ON WHICH A REFLECTIVE COAT IS APPLIED 17. C. THIS LAYOUT ALLOWS THE LUMINOSITY TO BE OBSERVED FROM ALL SIDES AND SIMPLIFIES THE MANUFACTURING.

Description

L'invention concerne un dispositif lumineux à diode comprenant uneThe invention relates to a diode light device comprising a

plaquette de diode lumineuse disposée sur une  light-diode wafer arranged on a

plaque support et un élément diffuseur de lumière associé à-  support plate and a light diffusing element associated with-

cette plaquette.this plate.

Dans un dispositif connu de ce genre, l'élément  In a known device of this kind, the element

diffuseur de lumière est constitué comme un élément de construc-  light diffuser is constituted as an element of construction

tion séparé qui est monté après coup directement sur la plaquette de diode dans la direction du rayonnement lumineux. La plaque  separate assembly which is subsequently mounted directly on the diode wafer in the direction of the light radiation. The plaque

substrat est faite d'un matériau opaque. L'élément de construc-  substrate is made of an opaque material. The element of construction

tion indépendant doit être fixé sur la plaque substrat au moyen d'éléments spéciaux de fixation. La plaquette de diode lumineuse doit être observée à partir de la face de la plaque substrat sur  It must be attached to the substrate plate by means of special fixing elements. The light-diode wafer should be observed from the face of the substrate plate on

laquelle est fixé l'élément diffuseur.  which is fixed the diffuser element.

L'invention a pour objet un dispositif du genre décrit ci-dessus caractérisé en ce que l'élément diffuseur est constitué par un corps en résine transparente recouvrant la plaquette de diode jusqu'à la plaque substrat, dont la surface supérieure est essentiellement convexe, la plaque substrat étant  The invention relates to a device of the type described above characterized in that the diffuser element is constituted by a transparent resin body covering the diode wafer to the substrate plate, whose upper surface is essentially convex, the substrate plate being

également faite d'une matière transparente, et une couche réflé-  made of a transparent material, and a reflective

chissante étant appliquée sur le corps en résine et le recouvrant  being applied to the resin body and covering it

jusqu'à la plaque substrat.to the substrate plate.

Ce dispositif présente l'avantage d'une fabrication nettement simplifiée et moins coûteuse. La plaquette de diode peut alors en outre être observée à travers la plaque substrat  This device has the advantage of significantly simplified manufacturing and less expensive. The diode wafer can then be further observed through the substrate plate

translucide.translucent.

La description ci-après se rapporte à un exemple de  The following description refers to an example of

réalisation du dispositif de l'invention, représenté au dessin  embodiment of the device of the invention, shown in the drawing

joint dans une vue en coupe perpendiculaire à la plaque substrat.  joined in a sectional view perpendicular to the substrate plate.

Dans la figure, sur une plaque substrat transparente 5, par exemple en verre, on applique, d'une part, une première piste conductrice transparente Ll en bioxyde d'étain ou oxyde d'indium et, d'autre part, une seconde piste conductrice opaque L2. Cette seconde piste L2 se compose d'une couche de base 4 en bioxyde d'étain ou oxyde d'indium, d'une couche intermédiaire 8 en étain ou indium, et une couche de revêtement 9 en or. Sur l'une des extrémités de la première piste conductrice Ll, est  In the figure, on a transparent substrate plate 5, for example made of glass, a first transparent conductive track L1 in tin dioxide or indium oxide is applied on the one hand and a second track on the other hand conductive opaque L2. This second track L2 consists of a base layer 4 of tin oxide or indium oxide, an intermediate layer 8 tin or indium, and a layer of coating 9 gold. On one end of the first conductive track L1, is

collée une plaquette de diode lumineuse 14, au moyen d'un adhé-  stuck a light-emitting diode 14 by means of an adhesive

sif conducteur. Un fil de liaison 15 en or assure une connexion conductrice entre la plaquette de diode 14 et la seconde piste  sif driver. A gold wire 15 provides a conductive connection between the diode wafer 14 and the second lead

conductrice L2.conductive L2.

La plaquette de diode 14 et le fil de liaison 15 sont recouverts d'un corps en résine synthétique coulée 16, qui sert d'élément diffuseur de la lumière, et qui présente une surface supérieure essentiellement convexe faite, de préférence en résine au silicone. Ce corps en résine 16 est fabriqué par apport goutte à goutte et il sert en outre de protection pour  The diode wafer 14 and the connecting wire 15 are covered with a cast synthetic resin body 16, which serves as a light-diffusing element, and which has a substantially convex upper surface made, preferably of silicone resin. This resin body 16 is manufactured by drip and it also serves as protection for

la plaquette 14 et le fil 15.the wafer 14 and the wire 15.

Il est en outre prévu, une couche de revêtement ré-  In addition, a layer of

fléchissante 17, appliquée sur le corps en résine 16, par exem-  bending member 17 applied to the resin body 16, for example

ple par argenture, application de vernis blanc, ou vaporisation d'aluminium. Grâce à cette couche réfléchissante 17, on obtient que la plaquette de diode 14 puisse être observée à travers la plaque substrat 5, la lumière étant renvoyée par la couche  plastered with silver, white varnish, or aluminum spray. With this reflective layer 17, it is obtained that the diode wafer 14 can be observed through the substrate plate 5, the light being reflected by the layer

réfléchissante 17.reflective 17.

Claims (2)

R E V E N D I C A T I 0 N S ) Dispositif lumineux à diode comprenant sur une plaque substrat (5) une plaquette ou pastille de diode lumineuse (14) sur laquelle est prévu un élément diffuseur de la lumière, caractérisé en ce que l'élément diffuseur est constitué par un corps en résine coulée transparente (16) recouvrant la plaquette de diode (14) jusqu'à la plaque substrat (5), dont la surface supérieure est essentiellement convexe, la plaque substrat (5) étant également faite d'une matière transparente, et une couche réfléchissante (17) étant appliquée sur le corps en résine (16) et le recouvrant jusqu'à la plaque substrat (5).REVENDICATI 0 NS) Diode luminous device comprising on a substrate plate (5) a light-diode wafer or patch (14) on which a light-diffusing element is provided, characterized in that the diffuser element is constituted by a body transparent casting resin (16) covering the diode wafer (14) to the substrate plate (5), the upper surface of which is substantially convex, the substrate plate (5) also being made of a transparent material, and a reflective layer (17) being applied to the resin body (16) and covering it to the substrate plate (5). 2 ) Dispositif suivant la revendication 1, caracté-  2) Device according to claim 1, characterized risé en ce que la plaquette de diode lumineuse (14) est collée,  in that the light-diode wafer (14) is glued, au moyen d'un adhésif électriquement conducteur, sur la pre-  by means of an electrically conductive adhesive, on the first mière piste conductrice (Ll) en matière transparente, disposée  first conductive track (L1) made of transparent material, arranged sur la plaque substrat.on the substrate plate. ) Dispositif suivant l'une des revendications 1 ou  Device according to one of claims 1 or 2, caractérisé en ce que le corps en résine transparent est  2, characterized in that the transparent resin body is constitué en une résine de silicone (16).  made of a silicone resin (16). 40) Dispositif suivant l'une quelconque des reven-  40) Device according to any one of the dications 1 à 3, caractérisé en ce que la première piste conduc-  1 to 3, characterized in that the first conductive track trice (Ll) est constituée en un oxyde métallique, tel que bi-  trice (L1) is made of a metal oxide, such as oxyde d'étain ou oxyde d'indium.tin oxide or indium oxide. ) Dispositif suivant l'une quelconque des revendi-  Device according to any one of the cations 1 à 4, caractérisé ence que la surface supérieure de la plaquette de diode (14), éloignée de la plaque substrat (5) est connectée, par un fil de liaison (15), à une seconde piste conductrice (L2). r  1 to 4, characterized in that the upper surface of the diode wafer (14) remote from the substrate plate (5) is connected by a connecting wire (15) to a second conductive track (L2). r ) Dispositif suivant l'une quelconque des revendi-  Device according to any one of the cations 1 à 5, caractérisé en ce que la plaque substrat (5) est  cations 1 to 5, characterized in that the substrate plate (5) is en verre.glass.
FR8024906A 1979-11-30 1980-11-24 DIODE LIGHT DEVICE Withdrawn FR2471054A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2948252 1979-11-30

Publications (1)

Publication Number Publication Date
FR2471054A1 true FR2471054A1 (en) 1981-06-12

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ID=6087279

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Application Number Title Priority Date Filing Date
FR8024906A Withdrawn FR2471054A1 (en) 1979-11-30 1980-11-24 DIODE LIGHT DEVICE

Country Status (3)

Country Link
JP (1) JPS5693382A (en)
FR (1) FR2471054A1 (en)
GB (1) GB2064865A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (en) 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg OPTO-ELECTRONIC COMPONENT
US5990498A (en) * 1997-09-16 1999-11-23 Polaroid Corporation Light-emitting diode having uniform irradiance distribution
EP1244152A3 (en) * 2001-01-26 2008-12-03 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
WO2002090825A1 (en) * 2001-04-23 2002-11-14 Lab. Sphere Corporation Lighting device using light-emitting diode
DE10133586A1 (en) * 2001-07-11 2003-01-23 Linde Ag Lighting system for goods display furniture
JP2004304041A (en) 2003-03-31 2004-10-28 Citizen Electronics Co Ltd Light emitting diode

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JPS5693382A (en) 1981-07-28
GB2064865A (en) 1981-06-17

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