Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
  • H01L33/502—Wavelength conversion materials
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
  • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
  • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

• the invention relates to a method for producing a
• Luminescent conversion material layer a composition used in the process, and a device
• Lumineszenzkonversionsscher used to the radiation emitted by a radiation source partially in a
• a radiation-emitting component are usually a uniform color impression of the emitted
• An object to be solved is to specify a method for producing a luminescence conversion material layer having improved properties.
• Lumineszenzkonversionsstoff a matrix material and a matrix material
• Solvent comprises;
• Substrate is formed.
• the method steps (a) and (b) can be carried out in any order or simultaneously.
• the method steps (c) and (d) can be carried out in any order or simultaneously.
• Emissive semiconductor element is hereinafter also referred to as the "semiconductor element”.
• the removal of the solvent in process step (d) and / or the addition of the composition in process step (c) can also be carried out in such a way that the luminescence conversion substance at least partially sediment during that time.
• the luminescence conversion substance can sediment in the presence of the solvent and of the matrix material, even if more matrix material is already present as solvent.
• compositions without solvents facilitates.
• heating of the composition to a temperature above ambient, such as above 25 ° C. may be dispensed with for application, thereby simplifying the process.
• the uniformity can be judged by cuts are through the layer and the substrate or parts of the substrate, for example in cross-section, made and then with a microscope or a scanning electron microscope (SEM) analy ⁇ Siert. Thereby, for example, the degree and the gradient of the Lumineszenzkonversionsstoffabsenkung, the density of the phosphor layer and density gradients can be determined.
• ⁇ luminescence conversion material layer can, in particular on the substrate or on the layer on which it is directly produced having a good adhesion, so that no adhesive or an adhesive layer are needed.
• a step for applying the adhesive and of course the adhesive can be saved in itself.
• emissive device with such a Lumineszenzkonversionsstoff ⁇ layer improves because unlike a conventional device, a transparent adhesive layer can not act unintentionally as a light guide through which
• Unconverted primary radiation could be decoupled.
• the semiconductor element emits a primary radiation having a first wavelength, wherein the first
• Wavelength indicates the spectrum of the primary radiation.
• the luminescence conversion substance at least partially converts the primary radiation into a secondary radiation having a second, longer wavelength.
• the second wavelength indicates the spectrum of the secondary radiation.
• semiconductor materials can be used which emit a primary radiation in the visible region of the spectrum (420 to 780 nm wavelength) or in the UV region (200 to 420 nm wavelength).
• Lumineszenzkonversionsstoffs are not limited according to the invention. Examples of such Lumineszenzkonver ⁇ sion materials and Lumineszenzkonversionsstoffmischache are:
• Chlorosilicates as disclosed, for example, in DE 10036940 and the prior art described therein,
• the luminescence conversion substance can also be a combination of different luminescence conversion substances.
• the luminescence conversion substance can be present in particles which are, for example, spherical, platelet-shaped, polyhedral, amorphous, any other defined shape and / or
• Combinations of these forms may have. These particles consist at least in part from the luminescence ⁇ material.
• the disclosure of the references is hereby incorporated by reference.
• the luminescence conversion substance layer can form uniformly on the substrate and in the beam path of the primary radiation. As a result, overall the uniformity of the radiation and the color impression of the emitted radiation of a component can be improved.
• radiation is understood to mean the superimposition of all the radiation emitted during operation, that is, for example, the superposition of primary radiation and secondary radiation.
• the emitted radiation can have any color impression in the CIE diagram, for example a white color impression.
• the method steps (c) and (d) can be carried out several times in succession. It is also possible to carry out the method steps (b), (c) and (d) several times in succession, whereby different compositions, for example with
• Lumineszenzkonversionsstoffen can be used. This makes it possible to set the color impression of the emitted radiation very fine.
• the composition is introduced into a recess of the
• the semiconductor element may be insbeson ⁇ particular arranged in the recess and / or forming a bottom of the formation.
• the composition applied in process step (c) has a meniscus.
• Such meniscus can be formed for example with the side walls of a recess by changing ⁇ effects, such as adhesion effects of the composition. Therefore, the formed Lumineszenzkonversionsstoff für can also have a slightly concave edge. This can be done, for example, by grinding through the substrate with the
• Evaluation can be detected by means of a microscope.
• Such a meniscus can sometimes be weak if the luminescence conversion layer has a very high density.
• Embodiments are also conceivable in which no meniscus can be detected, for example if the luminescence conversion layer has only a small amount of matrix material.
• process step (c) the composition is applied directly to the
• the region or a second device may be arranged or applied, that the first layer, the first region or the first device directly in direct mechanical and / or electrical contact on the second layer, the second region or the second device or to the two other layers, areas or devices
• an indirect contact may be designated, in which further
• the Lumineszenzkonversionsstoff für can thus also form directly on the semiconductor element.
• the luminescence conversion material layer in particular has good adhesion to the surface of the semiconductor element, so that the use of adhesives can be dispensed with.
• the Lumineszenzkonversionsstoff für can be
• the luminescence ⁇ conversion-material layer may cover the exposed surfaces of the semiconductor element evenly, whereby the advantages already described are obtained.
• the luminescence conversion layer is formed directly on the semiconductor element, the through
• Radiation conversion generated heat can be emitted and discharged better over the semiconductor element, as is the case in a conventional arrangement with an adhesive layer between the semiconductor element and Lumineszenzkonversionsscherlement.
• the conversion efficiency of the Lumineszenzkonversionsstoffs can be improved, since this usually has a higher efficiency at low temperatures than at higher temperatures.
• the semiconductor element can be operated, for example, at higher currents.
• the semiconductor element has a reflective material on its lateral surfaces in the substrate provided in method step (a). Thereby, a main surface of the semiconductor element can only be exposed, so that in the process step ⁇ (d) formed LumineszenzkonversionsstoffSchicht is generated only on this major surface.
• the reflective materials for example, TiO 2, ZrO 2, Al 2 O 3, glass, SiO 2 particles, and combinations of these materials may be used. These materials may be arranged either directly or, for example, in a matrix of a glass or a polymeric material.
• the semiconductor element may as already ⁇ leads be located in a recess of the substrate and a plane surface are produced with the reflective material, which includes the main surface of the semiconductor element.
• the luminescence conversion material layer can be formed with improved uniformity.
• the substrate provided in method step (a) has a recess whose lateral boundaries form structures which comprise or consist of a photoresist.
• the composition can be applied in this recess in method step (c).
• the lateral limits can be so formed that the bottom of the recess is at least partially formed by the semiconductor element or a major surface of the semi-conductor element ⁇ . In this way, in particular a uniform formation of the luminescence conversion layer is made possible directly on the semiconductor element.
• the structures which comprise a photoresist are removed in a further method step (e). This can be done by
• Irradiation for example, with UV radiation, done so that the photoresist following, for example, with a Solvent, can be easily removed.
• the regions in which the photoresist has been removed have little or no residue of the composition or of the luminescence conversion substance layer, so that the semiconductor element can be divided well in these regions.
• chips can thus be produced from the semiconductor element that have a main surface
• a plurality of such semiconductor chips which emit radiation with a desired, for example white, color impression during operation can thus be produced in parallel.
• these semiconductor chips can be used in components, so that a further step for applying luminescence conversion materials can be dispensed with, whereby the production of the components is simplified and the production costs are reduced.
• step (d) of the semiconductor element and the luminescence conversion material layer ⁇ obtained will form in step (d) of the semiconductor element and the luminescence conversion material layer ⁇ obtained.
• white chip printed semiconductor chips may also be formed in parallel as previously described.
• composition in method step (c) during application has a
• the composition When applied in process step (c), the composition may have a viscosity of ⁇ 100 mPa * s and in particular of ⁇ 50 mPa * s, for example ⁇ 20 mPa * s.
• the viscosity gives the dynamic here Viscosity of the composition and is with a
• the surfaces on which the composition is applied are uniformly wetted. In particular, it compensates for (minor) bumps.
• the low viscosity also manifests itself in a low surface tension of the composition. Another advantage is that a sedimentation of the luminescence conversion substance or the
• composition provided in method step (b) is designed such that it has a needle-shaped outlet with a needle-shaped outlet
• Opening diameter of ⁇ 1 mm, in particular 0.1 to 0.5 mm, can be applied.
• a lowering of the viscosity can also be achieved in addition to the choice of the components of the composition by the during or before process step (c)
• composition is heated. Additionally or alternatively, the composition may be stirred, shaken, and / or pressed through a needle, thereby shearing the composition. Due to the shear, the viscosity decreases. According to another embodiment, in method step (d) a luminescence conversion layer is formed
• the trained LumineszenzkonversionsstoffSchicht generally has a smaller layer thickness than is the case with herkömm ⁇ union Lumineszenzkonversionsscherlementen, have di typically layer thicknesses of> 80 ⁇ .
• the application according Lumineszenzkonversions material layer also smaller components or
• the Lumineszenzkonversionsstoff- layer can adhere well to the substrate or on the semiconductor element even with a high content of Lumineszenzkonversionsstoff.
• the content of luminescence conversion can be> 75% by weight and in particular ⁇ sondere> 85% by weight, for example 90% by weight.
• the figure refers to the total mass of the luminescence ⁇ conversion-material layer.
• the Lumineszenzkonversionsstoff- layer can adhere well to the substrate or on the semiconductor element even with a high content of Lumineszenzkonversionsstoff.
• the content of luminescence conversion can be> 75% by weight and in particular ⁇ sondere> 85% by weight, for example 90% by weight.
• the figure refers to the total mass of the luminescence ⁇ conversion-material layer.
• the Lumineszenzkonversionsstoff- layer can adhere well to the substrate or on the semiconductor element even with a high content of Lumineszenzkonversionsstoff.
• Advantages of such a high luminescence conversion substance concentration are, for example, a good heat conductivity. ness.
• the radiated heat of the semiconductor ⁇ elements and in particular the heat generated by conversion can be better dissipated from the LumineszenzkonversionsstoffSchicht.
• An improved heat dissipation also leads to a higher conversion efficiency.
• the luminescence conversion material layer can therefore be formed such that it has a denser packing of luminescence conversion substance than in the prior art.
• the luminescence conversion substance can at least partially form a densest packing in the matrix material.
• the luminescence conversion layer formed in process step (d) has a content of matrix material of ⁇ 50% by weight.
• the content of matrix material may be ⁇ 25% by weight and in particular ⁇ 15% by weight, for example 10% by weight.
• the luminescence conversion layer can therefore be largely or completely
• Lumineszenzkonversionsstoff and matrix material may be formed.
• the composition is applied in such a way that the luminescence conversion substance is sedimented within 60 minutes and in particular within 30 minutes, for example within 15 minutes, before and / or during process step (d). Usually done within this Period of time a partial or complete sedimentation of Lumineszenzkonversions fürs. Thereafter and / or during this time, the solvent may be at least partially removed.
• the solvent is heated at elevated temperature in process step (d)
• An elevated temperature means a temperature above room temperature (25 ° C), so that the solvent can be removed more easily or faster.
• process step (d) the solvent is removed at a temperature between 40 and 160.degree. C. and in particular between 40 and 80.degree. C., for example at 60.degree.
• the solvent is removed at a pressure between 0.5 and 800 mbar and in particular between 1 and 100 mbar, for example at 10 mbar.
• a negative pressure accelerates the removal of the solvent.
• radiation is irradiated in step (d) to remove the solvent.
• the radiation may be, for example, beta or gamma radiation. It is also possible to use UV radiation or infrared radiation. In principle, it is also possible to irradiate or heat with microwaves.
• the radiation used for irradiation does not correspond to the radiation emitted during operation of the semiconductor element. It can be heated in any combination for at least partial removal of the solvent in step (d) and / or applied a negative pressure and / or irradiated with radiation. As a rule, the solvent is largely removed in process step (d) so that the luminescence conversion material layer has only a slight or no residual content of solvent.
• Process step (d) Lumineszenzkonversions- layer formed a residual content of up to 5% by weight of solvent ⁇ and in particular of up to 3% by weight of solvent, typically 1 to 2% by weight. A small residual solvent content can be used to increase the adhesion of the luminescent conversion material layer to the substrate
• the solvent can therefore act as a primer.
• Residual content of solvent in the luminescence conversion layer can be determined by means of solid-state nuclear magnetic resonance spectroscopy (solid-state NMR).
• a luminescence conversion material layer is formed
• the concentration of the luminescence conversion substance in a matrix which comprises or consists of the matrix material has a gradient.
• This gradient can be formed, for example, as a result of the sedimentation of the luminescence conversion substance.
• Such a gradient may be formed such that in the substrate or the semiconductor element facing
• the gradient may be linear, for example.
• a gradient can be used for a gradually varying effective refractive index.
• the gradient can be used for a gradually varying effective refractive index.
• Refractive index difference (so-called index jump) between the semiconductor element and Lumineszenzkonversionsstoff against an optionally placed thereon potting compound made of silicone or against a gas atmosphere can be reduced, so that the radiation decoupling is improved.
• the in process step (b) composition provided in addition to the matrix material and solvent containing 2 to 50% by weight and in particular ⁇ sondere 5 to 30% by weight of luminescence conversion.
• the proportion of the luminescence material is increased until the solvent is removed to a sufficient extent and the LumineszenzkonversionsstoffSchicht
• the particles of the luminescence conversion substance in the composition provided in process step (b) have an average diameter of ⁇ 20 ⁇ m and in particular of ⁇ 10 ⁇ m.
• the particle size is not particularly limited in the process. For example, very small particles can be used, which in a conventional
• the average particle diameter can be over
• At least 95% by weight and in particular at least 99% by weight of the particles of the luminescence conversion substance have a maximum diameter of ⁇ 20 ⁇ m and in particular of ⁇ 15 ⁇ m in the composition provided in process step (b).
• At least 95% and especially at least 99% of the particles of the luminescence ⁇ conversion substance in the in process step (b) ready ⁇ identified composition has a minimum diameter of> 2 ⁇ and in particular of> 5 ⁇ on.
• small particles, for example, with a diameter of up to 2 ⁇ radiation can be strongly scattered.
• the transmission is improved because less radiation losses occur in the Lumineszenzkonversions- material layer.
• Process step (b) provided composition 5 to 25 wt% matrix material.
• the composition may contain ⁇ 15% by weight, for example 10% by weight, matrix material.
• the matrix material in the composition provided in process step (b) is selected from: silicone, epoxy resin, acrylic resin,
• Precursor of these polymer compounds and combinations of the materials mentioned. Combinations also include hybrid materials.
• a combination of, for example, silicone and epoxy resin can therefore also be a silicone-epoxy hybrid material. If the matrix material contains or consists of precursors of polymer compounds, these can be used in process step (d) to form the luminescence Conversionsstoff Anlagen be at least partially crosslinked. The crosslinking can be done by curing, for example by
• the matrix material is in particular transparent to the primary radiation and to the secondary radiation, so that only little radiation losses occur in the luminescence conversion material layer due to the matrix material.
• the matrix material in the composition provided in process step (b) is a silicone.
• the silicone can contain or consist of a commercially available silicone, in particular polydialkylsiloxane, polydiarylsiloxane, polyalkylarylsiloxane or a combination thereof. Examples of such a silicone are poly (dimethylsiloxane), polymethylphenylsiloxane or a combination thereof.
• a commercially available silicone in particular polydialkylsiloxane, polydiarylsiloxane, polyalkylarylsiloxane or a combination thereof.
• examples of such a silicone are poly (dimethylsiloxane), polymethylphenylsiloxane or a combination thereof.
• Process step (b) provided composition 30 to 95 wt%, in particular 50 to 75 wt%, for example 60 wt%, solvent.
• the composition thus generally has a significantly larger volume than the luminescence conversion material layer formed in process step (d).
• the solvent in the composition provided in process step (b) is suitable for dissolving the matrix material and in particular a silicone.
• the solvent is in the composition provided in process step (b) selected from: ester, ether, silyl ether, disiloxane, aliphatic, aromatic hydrocarbon, halogenated hydrocarbon and combinations of these solvents.
• the solvent is volatile, so that it can be easily at least partially removed in process step (d).
• the solvent may have a boiling point of ⁇ 120 ° C at atmospheric pressure (1013.25 mbar). Damage to the Lumineszenzkonversionsstoff für is therefore not to be feared when removing the solvent; because damage usually occurs only when heated above 200 ° C for a long time.
• Low molecular weight compounds that can be used as precursors for polymer compounds are usually counted not to the solvents but to the matrix materials.
• Such low molecular weight compounds are example ⁇ as acrylic and methacrylic acid derivatives, epoxides,
• Olefins isocyanates and similar polymerisable
• the solvent in the composition provided in process step (b) is a disiloxane, for example hexamethyldisiloxane
• This solvent has the particular advantage that it is very good at dissolving silicones, is relatively volatile and can be used in low concentrations as adhesion promoters in the Lumineszenzkonversionsstoff für.
• Other typical solvents include toluene and benzene as aromatic hydrocarbons alone or in combination with other solvents, for example hexamethyldisiloxane can be used.
• composition provided may be formed, for example, by mixing ⁇ luminescence material, matrix material and solvent.
• ⁇ luminescence material for example, by mixing ⁇ luminescence material, matrix material and solvent.
• a conventional luminescent conversion substance-containing printing paste such as those described in U.S. Pat
• Printing luminescence conversion elements is used to mix with a solvent and thereby obtain a composition according to at least one embodiment of the invention.
• Process step (a) provided substrate a Verguss ⁇ mass arranged. Therefore, the luminescence-conversion layer does not become directly on the semiconductor element
• This potting compound for example, in
• This second luminescence conversion substance can be distributed, for example, in a conventional element, in a luminescence conversion material layer according to at least one embodiment of the invention, or distributed in the potting compound.
• the luminescence conversion substances already described can be used as the second luminescence conversion substance.
• the Lumineszenzkonversionsstoff Anlagen can in
• Process step (d) are also formed as an element for so-called remote phosphor conversion on the potting compound.
• no second luminescence conversion substance is needed.
• remote phosphor conversion becomes a Radiation conversion understood, which takes place at a great distance from the radiation source, for example> 750 ⁇ .
• the composition is applied directly to the potting compound in process step (c).
• the color impression of the radiation can be very finely regulated thereby.
• the uniformity of the radiation is often improved.
• a radiation-emitting device comprising a radiation-emitting semiconductor element and a second Lumineszenzkonversionsstoff and a potting compound provide to determine the color impression emitted by the device radiation and this subsequently by means of a Lumineszenzkonversionsstoff für, according to at least one embodiment of the invention on the
• Potting compound is formed to adjust. This can be done individually for each component or each
• Substrate are carried out.
• a luminescence conversion material layer is formed in method step (d) in which the concentration of luminescence conversion substance decreases towards the lateral sides.
• concentration of luminescence conversion substance in the center of the formed luminescence conversion material layer is higher, so that higher conversion occurs there.
• the Method according to at least one embodiment of the invention can be a Lumineszenzkonversionsstoff für such as
• Example ⁇ example can be produced on a thin LumineszenzkonversionsstoffSchicht a potting compound in which the concentration of luminescence conversion has a gradient.
• the concentration can be higher in particular in the main emission direction than at an angle to the main emission direction.
• a dependence of the color impression on the angle ⁇ can be at least partially reduced, as a result of which a more uniform overall color impression is obtained.
• the luminescence conversion layer formed in process step (d) has a layer thickness of ⁇ 30 ⁇ m, for example 20 ⁇ m.
• a thin luminescent conversion layer will therefore convert a smaller fraction of the incident radiation as compared to a thicker layer.
• the color location of the radiation can be very finely adjusted, which in particular in one embodiment of the invention in which the composition is applied to a potting compound in process step (c)
• this off guide (d) is formed form a LumineszenzkonversionsstoffSchicht in method step in which at least 85% of the particles of the Luminescent ⁇ zenzkonversionsstoffs as a monolayer or submonolayer
• the concentration of luminescence conversion substance in the region of the main emission direction of a component can be increased. In this range, more than one layer of luminescence conversion material Particles are present. Detection of the particle arrangement in the luminescence conversion layer can be determined by grinding and subsequent analysis by SEM.
• composition for producing a luminescence conversion material layer is also specified.
• composition can also be made from these materials
• composition can be used in particular for a
• Method according to at least one embodiment of the invention may be used to produce a luminescence conversion material layer on a substrate or on a semiconductor element.
• the composition can thus the
• a device that contains a primary radiation emitting in operation Halbleiterele ⁇ element and, disposed in the beam path of the emitted primary radiation Lumineszenzkonversionsstoff für that is by the process according to at least one disclosed embodiment of the invention manufactured is respectively produced.
• the radiated from the component radiation thus has
• the component can be the usual components of a
• Optoelectronic component such as electrical leads, a lead frame, a bonding pad, a bonding wire, solder mass, etc. include.
• a recess of the component may be at least partially filled with a potting compound.
• the semiconductor element may, for example, comprise a thin-film light-emitting diode chip, which is characterized in particular by the following characteristic features:
• Main surface of a radiation-generating epitaxial layer sequence is applied or formed a reflective layer that reflects at least a portion of the generated in the epitaxial ⁇ layer sequence electromagnetic radiation back into this;
• the epitaxial layer sequence has a thickness in the range of 20 ⁇ or less, in particular in the range of 10 ⁇ and often in the range of 2 ⁇ on;
• the epitaxial layer sequence contains at least one
• epitaxial epitaxial layer sequence that is, it has a possible ergodisch stochastic scattering behavior.
• FIG. 2 shows a further substrate on which a luminescence conversion material layer according to an embodiment of the invention.
• FIG. 3a to Fig. 3d further embodiments of the invention.
• FIGS. 1 a to 1 c show a cross-section through a substrate 1, which comprises a recess 5, for example in a housing made of plastic or ceramic, and a semiconductor element 10, which can emit primary radiation during operation and is arranged in the recess 5 ,
• the housing may include reflective materials (not shown).
• Components of an optoelectronic component such as electrical leads, a lead frame, a bonding pad, a bonding wire, solder mass, etc. include (for clarity, not shown), so from the
• Substrate an optoelectronic device can be produced.
• composition 21 according to at least one embodiment of the invention, which is applied to the substrate 1 in a method step (c) has been.
• the composition 21 in the recess 5 and directly on the substrate 1 relationship ⁇ was applied to the semiconductor element 10.
• the composition ⁇ reduction 21 containing from 2 to 50% by weight, for example 30% by weight, Lumineszenzkonversionsstoffp
• the composition contains 21 5 to 25 wt%, for example 10% by weight matrix material, for example a silicone, and 50 to 75% by weight, for example 60% by weight, of solvent.
• a solution ⁇ medium hexamethyldisiloxane can be used.
• FIG. 1c shows a completed method step (d) according to at least one embodiment of the invention.
• a luminescence conversion material layer 20, which is also referred to below as “layer 20”, is produced uniformly directly on the exposed surfaces of the semiconductor element 10 or on the substrate 1.
• Matrix material of the layer 20 is higher in the regions which adjoin the semiconductor element 10 and the substrate 1, respectively, than in the remote regions of the layer 20, so that a gradient is present.
• the layer 20 is produced in particular uniformly on the semiconductor element 10, so that in operation radiation with a uniform uniform color impression can be emitted. As a result, for example, a so-called blue-piping is avoided.
• the formed layer 20 has at least 75% by weight, in particular 85% by weight, for example 90% by weight, of luminescence conversion substance 25. Furthermore, the
• Layer 20 at most 25% by weight, in particular at most 15% by weight such as 9% by weight, matrix material and 1 to 2% by weight, for example 1% by weight, of solvent.
• the substrate 1 on which a Lumineszenzkonversionsstoff- layer 20 is produced according to at least one embodiment of the invention can be used to produce a device.
• a herkömm ⁇ Liche potting compound for example, a silicone or an epoxy resin, arranged as a lens and optionally
• Such a device can radiation with any color impression, for
• FIG. 2 shows a further embodiment of the invention, in which the substrate 1, for example from FIG. 1 a, additionally has a layer 15, the reflective one
• Materials such as Ti02 include or from
• FIG. 3 a shows a substrate 1, as is provided according to at least one embodiment of the invention in a method step (a).
• the substrate 1 may be a semiconductor element 10 on which structures 6 are produced.
• the structures 6 can be arranged directly on the semiconductor element 10 and comprise or consist of a photoresist.
• the structures 6 and the semiconductor element 10 form a recess 5, wherein the bottom of the recess 5 can be formed by the semiconductor element 10 as shown.
• the substrate 1 of Figure 3a for example, a
• FIG. 3c shows a substrate 1 of FIG. 3a and / or FIG. 3b, on which the layer 20 is located directly on the substrate
• FIG. 3d shows a component, a semiconductor chip 50, which after a method step (e) is known from the
• Substrate 1 with a layer 20, as shown in Figure 3c was prepared.
• the structures 6 were irradiated with UV radiation and then removed. At least some of the now uncoated sites became the
• Semiconductor element 10 divided, for example by sawing.
• the semiconductor chip 50 comprises a semiconductor element 10 which has on a main surface a layer 20 according to at least one embodiment of the invention.
• Semiconductor chip 50 in operation radiation with any color impression, for example white, emit.
• the semiconductor chip 50 is particularly suitable for in Optoelectronic device to be used, which thus requires no further Lumineszenzkonversionsscher to radiation during operation with a desired color impression
• FIG. 4 a shows a composition 21 according to at least one further embodiment of the invention, which has a direct contact with a potting compound 40 of a substrate 1
• the substrate 1 includes, for example
• Lumineszenzkonversionsscherlement 45 which is arranged with a layer 46 of adhesive on the semiconductor element 10.
• the substrate 1 may also have a luminescence conversion layer 20, as may be produced according to at least one embodiment of the invention.
• the substrate 1 may contain further constituents which are suitable for an optoelectronic
• the substrate 1 may, for example, be an optoelectronic component which radiates radiation with a color impression which is to be adjusted.
• FIG. 4b shows how on the substrate 1 from FIG. 4a in a method step (d) a luminescence conversion layer 20 according to at least one embodiment of the invention is formed.
• the layer 20 in this case has a layer thickness of ⁇ 30 ⁇ , for example, 20 ⁇ , so that only a slight conversion takes place, which is used to adjust the Color impression of an emitted radiation can be used.
• the layer 20 at least 85% of the particles of the luminescence conversion substance 25 are in a monolayer or
• FIG. 4 c shows a further component in which a luminescence conversion material layer 20 according to at least one embodiment of the invention lies directly on one
• the Lumineszenzkonversionsstoff- layer 20 may be the layer 20 of Figure 4b
• FIG. 4d shows a further component comprising a luminescence conversion layer 20, which was formed according to at least one embodiment of the invention.
• a luminescence conversion layer 20 is designed as an element for so-called remote phosphor conversion, for example directly on a potting compound 40.
• the invention includes any novel feature as well as any combination of features, which includes in particular any combination of features in the claims, even if this feature or this combination itself is not explicitly stated in the patent claims or exemplary embodiments.

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• 2010
  • 2010-12-13 DE DE102010054280A patent/DE102010054280A1/de active Pending
• 2011
  • 2011-12-08 TW TW100145235A patent/TWI577053B/zh active
  • 2011-12-13 CN CN201180059950.6A patent/CN103262270B/zh active Active
  • 2011-12-13 EP EP11794749.9A patent/EP2652806A1/de not_active Withdrawn
  • 2011-12-13 WO PCT/EP2011/072627 patent/WO2012080263A1/de active Application Filing
  • 2011-12-13 US US13/877,296 patent/US9142731B2/en active Active
  • 2011-12-13 KR KR1020137011551A patent/KR101621130B1/ko active IP Right Grant

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