DE69022310D1 - Halbleiterspeichergerät. - Google Patents

Halbleiterspeichergerät.

Info

Publication number: DE69022310D1
Authority: DE; Germany
Prior art keywords: storage device; semiconductor storage; semiconductor; storage
Prior art date: 1989-07-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69022310T

Other languages

English (en)

Other versions

DE69022310T2 (de

Inventor

Toru Kono

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-07-04

Filing date

1990-07-04

Publication date

1995-10-19

1990-07-04 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1995-10-19 Publication of DE69022310D1 publication Critical patent/DE69022310D1/de

1996-02-22 Application granted granted Critical

1996-02-22 Publication of DE69022310T2 publication Critical patent/DE69022310T2/de

2010-07-05 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/26—Accessing multiple arrays
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously

DE69022310T 1989-07-04 1990-07-04 Halbleiterspeichergerät. Expired - Fee Related DE69022310T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1171283A JP2780354B2 (ja)	1989-07-04	1989-07-04	半導体メモリ装置

Publications (2)

Publication Number	Publication Date
DE69022310D1 true DE69022310D1 (de)	1995-10-19
DE69022310T2 DE69022310T2 (de)	1996-02-22

Family

ID=15920453

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69022310T Expired - Fee Related DE69022310T2 (de)	1989-07-04	1990-07-04	Halbleiterspeichergerät.

Country Status (5)

Country	Link
US (1)	US5148398A (de)
EP (1)	EP0407173B1 (de)
JP (1)	JP2780354B2 (de)
KR (1)	KR930009543B1 (de)
DE (1)	DE69022310T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4028819A1 (de) *	1990-09-11	1992-03-12	Siemens Ag	Schaltungsanordnung zum testen eines halbleiterspeichers mittels paralleltests mit verschiedenen testbitmustern
JP2863012B2 (ja) *	1990-12-18	1999-03-03	三菱電機株式会社	半導体記憶装置
JP2957284B2 (ja) *	1990-12-22	1999-10-04	富士通株式会社	半導体回路
US6781895B1 (en)	1991-12-19	2004-08-24	Kabushiki Kaisha Toshiba	Non-volatile semiconductor memory device and memory system using the same
US5361227A (en) *	1991-12-19	1994-11-01	Kabushiki Kaisha Toshiba	Non-volatile semiconductor memory device and memory system using the same
KR950000305Y1 (ko) *	1991-12-23	1995-01-16	금성일렉트론 주식회사	메모리 장치의 테스트 모드회로
JPH05210998A (ja) *	1992-01-30	1993-08-20	Nec Corp	半導体メモリ装置
US5216672A (en) *	1992-04-24	1993-06-01	Digital Equipment Corporation	Parallel diagnostic mode for testing computer memory
JPH0612878A (ja) *	1992-06-25	1994-01-21	Mitsubishi Electric Corp	半導体メモリ装置
US5327382A (en) *	1992-09-09	1994-07-05	Katsunori Seno	Method of testing redundant memory cells
JP2768175B2 (ja) *	1992-10-26	1998-06-25	日本電気株式会社	半導体メモリ
KR960002016B1 (ko) *	1993-02-15	1996-02-09	금성일렉트론주식회사	반도체 기억소자의 테스트 모드회로
JPH06275100A (ja) *	1993-03-19	1994-09-30	Fujitsu Ltd	半導体記憶装置
JPH0877797A (ja) *	1994-09-01	1996-03-22	Fujitsu Ltd	半導体記憶装置
JP3603440B2 (ja) *	1996-01-12	2004-12-22	富士通株式会社	半導体記憶装置
US5959911A (en) *	1997-09-29	1999-09-28	Siemens Aktiengesellschaft	Apparatus and method for implementing a bank interlock scheme and related test mode for multibank memory devices
US6058056A (en) *	1998-04-30	2000-05-02	Micron Technology, Inc.	Data compression circuit and method for testing memory devices
US6295618B1 (en) *	1998-08-25	2001-09-25	Micron Technology, Inc.	Method and apparatus for data compression in memory devices
JP2001243795A (ja) *	1999-12-24	2001-09-07	Nec Corp	半導体記憶装置
JP4057756B2 (ja) *	2000-03-01	2008-03-05	松下電器産業株式会社	半導体集積回路
US6421794B1 (en)	2000-03-09	2002-07-16	John T. Chen	Method and apparatus for diagnosing memory using self-testing circuits
CN100455611C (zh)	2004-04-13	2009-01-28	大金工业株式会社	氯三氟乙烯共聚物
US7339841B2 (en) *	2005-09-16	2008-03-04	Infineon Technologies Ag	Test mode method and apparatus for internal memory timing signals
JP5181698B2 (ja)	2008-01-30	2013-04-10	富士通セミコンダクター株式会社	半導体メモリおよび半導体メモリの製造方法
JP5131348B2 (ja)	2008-03-19	2013-01-30	富士通セミコンダクター株式会社	半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
JP2012022750A (ja) *	2010-07-15	2012-02-02	Lapis Semiconductor Co Ltd	半導体メモリのテスト回路
GB2498980A (en) *	2012-02-01	2013-08-07	Inside Secure	Device and method to perform a parallel memory test

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57105897A (en) *	1980-12-23	1982-07-01	Fujitsu Ltd	Semiconductor storage device
US4686456A (en) *	1985-06-18	1987-08-11	Kabushiki Kaisha Toshiba	Memory test circuit
JP2523586B2 (ja) *	1987-02-27	1996-08-14	株式会社日立製作所	半導体記憶装置
JPS63257999A (ja) *	1987-04-15	1988-10-25	Mitsubishi Electric Corp	半導体記憶装置
JPS6473600A (en) *	1987-09-16	1989-03-17	Hitachi Ltd	Semiconductor memory device
JP2805853B2 (ja) *	1989-06-26	1998-09-30	日本電気株式会社	半導体メモリ

1989
- 1989-07-04 JP JP1171283A patent/JP2780354B2/ja not_active Expired - Fee Related
1990
- 1990-07-03 US US07/553,027 patent/US5148398A/en not_active Expired - Lifetime
- 1990-07-04 DE DE69022310T patent/DE69022310T2/de not_active Expired - Fee Related
- 1990-07-04 KR KR1019900010074A patent/KR930009543B1/ko not_active IP Right Cessation
- 1990-07-04 EP EP90307314A patent/EP0407173B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0407173A3 (en)	1992-01-08
DE69022310T2 (de)	1996-02-22
KR930009543B1 (ko)	1993-10-06
EP0407173A2 (de)	1991-01-09
JPH0337900A (ja)	1991-02-19
KR910003679A (ko)	1991-02-28
US5148398A (en)	1992-09-15
EP0407173B1 (de)	1995-09-13
JP2780354B2 (ja)	1998-07-30

Publication	Publication Date	Title
DE69011738D1 (de)	1994-09-29	Halbleiter-Speichereinrichtung.
DE69022310D1 (de)	1995-10-19	Halbleiterspeichergerät.
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE3850855D1 (de)	1994-09-01	Halbleitervorrichtung.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE3875767D1 (de)	1992-12-17	Halbleiter-festwertspeichereinrichtung.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE69023468D1 (de)	1995-12-14	Halbleiter-Speichereinrichtung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE69022312D1 (de)	1995-10-19	Halbleiterspeichergerät.
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE68920946D1 (de)	1995-03-16	Halbleiter-Speichereinrichtung.
DE69023258D1 (de)	1995-12-07	Halbleiter-Speichereinrichtung.
DE68923624D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE3889354D1 (de)	1994-06-09	Halbleiteranordnung.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE69024680D1 (de)	1996-02-22	Halbleiter-Speichereinrichtung
DE3882150D1 (de)	1993-08-12	Halbleiterspeichergeraet.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.

Legal Events

Date	Code	Title	Description
1996-10-10	8364	No opposition during term of opposition
2009-06-04	8339	Ceased/non-payment of the annual fee