DE68920946D1 - Halbleiter-Speichereinrichtung. - Google Patents

Halbleiter-Speichereinrichtung.

Info

Publication number: DE68920946D1
Authority: DE; Germany
Prior art keywords: storage device; semiconductor storage; semiconductor; storage
Prior art date: 1988-10-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE68920946T

Other languages

English (en)

Other versions

DE68920946T2 (de

Inventor

Masanobu Yoshida

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-10-25

Filing date

1989-10-24

Publication date

1995-03-16

1989-10-24 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1995-03-16 Publication of DE68920946D1 publication Critical patent/DE68920946D1/de

1995-05-24 Application granted granted Critical

1995-05-24 Publication of DE68920946T2 publication Critical patent/DE68920946T2/de

2009-10-25 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Read Only Memory (AREA)
Static Random-Access Memory (AREA)
Logic Circuits (AREA)
Dram (AREA)

DE68920946T 1988-10-25 1989-10-24 Halbleiter-Speichereinrichtung. Expired - Fee Related DE68920946T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP26707988A JPH0821849B2 (ja)	1988-10-25	1988-10-25	半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE68920946D1 true DE68920946D1 (de)	1995-03-16
DE68920946T2 DE68920946T2 (de)	1995-05-24

Family

ID=17439739

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68920946T Expired - Fee Related DE68920946T2 (de)	1988-10-25	1989-10-24	Halbleiter-Speichereinrichtung.

Country Status (5)

Country	Link
US (1)	US5018107A (de)
EP (1)	EP0366403B1 (de)
JP (1)	JPH0821849B2 (de)
KR (1)	KR930009462B1 (de)
DE (1)	DE68920946T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR900015148A (ko) *	1989-03-09	1990-10-26	미다 가쓰시게	반도체장치
JPH0793026B2 (ja) *	1989-09-20	1995-10-09	富士通株式会社	デコーダ回路
JPH0810728B2 (ja) *	1990-02-01	1996-01-31	株式会社東芝	半導体記憶装置
GB9007790D0 (en) *	1990-04-06	1990-06-06	Lines Valerie L	Dynamic memory wordline driver scheme
GB9007791D0 (en)	1990-04-06	1990-06-06	Foss Richard C	High voltage boosted wordline supply charge pump and regulator for dram
US5283481A (en) *	1990-12-26	1994-02-01	International Business Machines Corporation	Bipolar element bifet array decoder
JPH05210992A (ja) *	1992-01-30	1993-08-20	Fujitsu Ltd	不揮発性半導体記憶装置
KR960006373B1 (ko) *	1992-10-31	1996-05-15	삼성전자주식회사	반도체 메모리 장치의 워드라인 구동회로
JPH07254275A (ja) *	1994-01-31	1995-10-03	Toshiba Corp	半導体記憶装置
US5534797A (en) *	1994-12-23	1996-07-09	At&T Corp.	Compact and fast row driver/decoder for semiconductor memory
US5719818A (en) *	1996-04-18	1998-02-17	Waferscale Integration Inc.	Row decoder having triple transistor word line drivers
JP3602294B2 (ja)	1997-05-28	2004-12-15	株式会社ルネサステクノロジ	半導体メモリおよび情報記憶装置
US5903170A (en) *	1997-06-03	1999-05-11	The Regents Of The University Of Michigan	Digital logic design using negative differential resistance diodes and field-effect transistors
US6055203A (en) *	1997-11-19	2000-04-25	Waferscale Integration	Row decoder
EP0933784A1 (de) *	1997-12-31	1999-08-04	STMicroelectronics S.r.l.	Hochspannungstreiberschaltung für die Dekodierungsphase in nichtflüchtigen mehrpegel Speicheranordnungen
JP2000048563A (ja) *	1998-07-30	2000-02-18	Nec Corp	半導体メモリ
JP3457209B2 (ja) *	1999-03-23	2003-10-14	富士通株式会社	電圧検出回路
US6366134B1 (en) *	1999-09-16	2002-04-02	Texas Instruments Incorporated	CMOS dynamic logic circuitry using quantum mechanical tunneling structures
CN101313365B (zh) *	2005-11-25	2011-11-09	株式会社半导体能源研究所	半导体器件及其操作方法
US8913436B2 (en) *	2013-03-14	2014-12-16	Freescale Semiconductor, Inc.	Non-volatile memory (NVM) with word line driver/decoder using a charge pump voltage
US10658026B2 (en) *	2017-05-26	2020-05-19	Taiwan Semiconductor Manufacturing Company Limited	Word line pulse width control circuit in static random access memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5522238A (en) *	1978-07-31	1980-02-16	Fujitsu Ltd	Decoder circuit
JPS58137192A (ja) *	1981-12-29	1983-08-15	Fujitsu Ltd	半導体記憶装置
US4623989A (en) *	1983-08-31	1986-11-18	Texas Instruments Incorporated	Memory with p-channel cell access transistors
JPS6061996A (ja) *	1983-09-14	1985-04-09	Toshiba Corp	不揮発性メモリのアドレスデコ−ダ回路
JPS60113397A (ja) *	1983-11-24	1985-06-19	Fujitsu Ltd	プログラマブルリ−ドオンリメモリ装置
JPS60143020A (ja) *	1983-12-29	1985-07-29	Matsushita Electric Ind Co Ltd	カウンタ・デコ−ダ
US4782247A (en) *	1984-08-08	1988-11-01	Fujitsu Limited	Decoder circuit having a variable power supply
JPS6145496A (ja) *	1984-08-08	1986-03-05	Fujitsu Ltd	デコ−ダ回路
JPH0746515B2 (ja) *	1984-12-28	1995-05-17	日本電気株式会社	デコ−ダ回路
JPS61196498A (ja) *	1985-02-26	1986-08-30	Mitsubishi Electric Corp	半導体記憶装置
US4645952A (en) *	1985-11-14	1987-02-24	Thomson Components-Mostek Corporation	High speed NOR gate

1988
- 1988-10-25 JP JP26707988A patent/JPH0821849B2/ja not_active Expired - Lifetime
1989
- 1989-10-19 US US07/424,356 patent/US5018107A/en not_active Expired - Lifetime
- 1989-10-24 DE DE68920946T patent/DE68920946T2/de not_active Expired - Fee Related
- 1989-10-24 EP EP89310932A patent/EP0366403B1/de not_active Expired - Lifetime
- 1989-10-25 KR KR1019890015347A patent/KR930009462B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP0366403A3 (de)	1991-04-24
KR900006979A (ko)	1990-05-09
US5018107A (en)	1991-05-21
KR930009462B1 (ko)	1993-10-04
DE68920946T2 (de)	1995-05-24
EP0366403A2 (de)	1990-05-02
JPH0821849B2 (ja)	1996-03-04
JPH02114717A (ja)	1990-04-26
EP0366403B1 (de)	1995-02-01

Publication	Publication Date	Title
DE69011738D1 (de)	1994-09-29	Halbleiter-Speichereinrichtung.
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE68908965D1 (de)	1993-10-14	Lagervorrichtung.
DE3684509D1 (de)	1992-04-30	Halbleiterspeichergeraet.
DE3681082D1 (de)	1991-10-02	Halbleiterspeichervorrichtung.
DE3685361D1 (de)	1992-06-25	Halbleiterspeichervorrichtung.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE3576433D1 (de)	1990-04-12	Halbleiterspeichervorrichtung.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE3581773D1 (de)	1991-03-28	Halbleiterspeichervorrichtung.
DE3584189D1 (de)	1991-10-31	Halbleiterspeichergeraet.
DE69022310D1 (de)	1995-10-19	Halbleiterspeichergerät.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE3770953D1 (de)	1991-08-01	Halbleiterspeichervorrichtungen.
DE68920946D1 (de)	1995-03-16	Halbleiter-Speichereinrichtung.
DE3767579D1 (de)	1991-02-28	Nichtfluechtige halbleiter-speichereinrichtung.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE69023468D1 (de)	1995-12-14	Halbleiter-Speichereinrichtung.
DE68926924D1 (de)	1996-09-19	Halbleiterspeichergerät
DE69022312D1 (de)	1995-10-19	Halbleiterspeichergerät.
DE68923588D1 (de)	1995-08-31	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1996-03-07	8364	No opposition during term of opposition
2007-08-23	8339	Ceased/non-payment of the annual fee