DE3865702D1 - Halbleiter-festwertspeichereinrichtung. - Google Patents

Halbleiter-festwertspeichereinrichtung.

Info

Publication number: DE3865702D1
Authority: DE; Germany
Prior art keywords: memory device; fixed memory; semiconductor fixed; semiconductor; memory
Prior art date: 1987-01-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8888101335T

Other languages

English (en)

Inventor

Tadashi Maruyama

Yukio Wada

Yasoji Suzuki

Tomohisa Shigematsu

Makoto Yoshizawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Toshiba Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-01-31

Filing date

1988-01-29

Publication date

1991-11-28

1988-01-29 Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp

1991-11-28 Application granted granted Critical

1991-11-28 Publication of DE3865702D1 publication Critical patent/DE3865702D1/de

2008-01-30 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Read Only Memory (AREA)
Non-Volatile Memory (AREA)

DE8888101335T 1987-01-31 1988-01-29 Halbleiter-festwertspeichereinrichtung. Expired - Lifetime DE3865702D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2108787A JPH0772996B2 (ja)	1987-01-31	1987-01-31	不揮発性半導体メモリ

Publications (1)

Publication Number	Publication Date
DE3865702D1 true DE3865702D1 (de)	1991-11-28

Family

ID=12045090

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8888101335T Expired - Lifetime DE3865702D1 (de)	1987-01-31	1988-01-29	Halbleiter-festwertspeichereinrichtung.

Country Status (5)

Country	Link
US (1)	US4912749A (de)
EP (1)	EP0280883B1 (de)
JP (1)	JPH0772996B2 (de)
KR (1)	KR900009176B1 (de)
DE (1)	DE3865702D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5138575A (en) *	1988-12-19	1992-08-11	Fujitsu Limited	Electricaly erasable and programmable read only memory with a discharge device
JPH0738274B2 (ja) *	1988-12-22	1995-04-26	株式会社東芝	不揮発性半導体メモリシステム
JP2529885B2 (ja) *	1989-03-10	1996-09-04	工業技術院長	半導体メモリ及びその動作方法
JP2807256B2 (ja) *	1989-03-17	1998-10-08	株式会社東芝	不揮発性半導体メモリ
FR2650109B1 (fr) *	1989-07-20	1993-04-02	Gemplus Card Int	Circuit integre mos a tension de seuil ajustable
JPH04123471A (ja)	1990-09-14	1992-04-23	Oki Electric Ind Co Ltd	半導体記憶装置のデータ書込みおよび消去方法
KR940005695B1 (ko) *	1990-12-19	1994-06-22	삼성전자 주식회사	불휘발성 기억소자의 로우 디코더 회로
KR930011000A (ko) *	1991-11-29	1993-06-23	김광호	이이피롬 장치
US5898619A (en) *	1993-03-01	1999-04-27	Chang; Ko-Min	Memory cell having a plural transistor transmission gate and method of formation
GB2304947B (en) *	1995-08-31	2000-02-23	Motorola Ltd	Electrically programmable memory, method of programming and method of reading
US5736891A (en) *	1996-01-11	1998-04-07	International Business Machines Corporation	Discharge circuit in a semiconductor memory
FR2770326B1 (fr) *	1997-10-28	2001-12-28	Sgs Thomson Microelectronics	Procede d'ecriture dans une memoire non volatile modifiable electriquement
DE59913841D1 (de) *	1998-02-12	2006-10-26	Infineon Technologies Ag	EEPROM und Verfahren zur Ansteuerung eines EEPROM
DE102004042105A1 (de) *	2004-08-30	2006-03-09	Infineon Technologies Ag	ROM-Speicher
US8320191B2 (en)	2007-08-30	2012-11-27	Infineon Technologies Ag	Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP5191834B2 (ja) *	2008-08-12	2013-05-08	セイコーインスツル株式会社	半導体不揮発性記憶装置
JP6751013B2 (ja)	2016-12-27	2020-09-02	旭化成エレクトロニクス株式会社	温度特性調整回路
US11049565B2 (en) *	2018-04-23	2021-06-29	Micron Technology, Inc.	Non-volatile memory devices and systems with volatile memory features and methods for operating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4375087C1 (en) *	1980-04-09	2002-01-01	Hughes Aircraft Co	Electrically erasable programmable read-only memory
JPS5747517A (en) *	1980-09-04	1982-03-18	Ishikawajima Harima Heavy Ind Co Ltd	Method and apparatus for controlling rolling speed of mandrel mill
JPS5834628A (ja) *	1981-08-24	1983-03-01	Hitachi Ltd	Ｍｏｓインバ−タ回路
US4558344A (en) *	1982-01-29	1985-12-10	Seeq Technology, Inc.	Electrically-programmable and electrically-erasable MOS memory device
JPS58161198A (ja) *	1982-03-19	1983-09-24	Ricoh Co Ltd	半導体メモリ
JPS5955071A (ja) *	1982-09-24	1984-03-29	Hitachi Micro Comput Eng Ltd	不揮発性半導体装置
JPS60182174A (ja) *	1984-02-28	1985-09-17	Nec Corp	不揮発性半導体メモリ
US4628487A (en) *	1984-08-14	1986-12-09	Texas Instruments Incorporated	Dual slope, feedback controlled, EEPROM programming
US4611309A (en) *	1984-09-24	1986-09-09	Advanced Micro Devices, Inc.	Non-volatile dynamic RAM cell
US4729115A (en) *	1984-09-27	1988-03-01	International Business Machines Corporation	Non-volatile dynamic random access memory cell
EP0183235B1 (de) *	1984-11-26	1993-10-06	Kabushiki Kaisha Toshiba	Nichtflüchtige Halbleiterspeicheranordnung
JPH0746515B2 (ja) *	1984-12-28	1995-05-17	日本電気株式会社	デコ−ダ回路
JPH0783064B2 (ja) *	1985-01-18	1995-09-06	株式会社日立製作所	半導体記憶装置
US4752912A (en) *	1985-05-14	1988-06-21	Xicor, Inc.	Nonvolatile electrically alterable memory and method
US4599706A (en) *	1985-05-14	1986-07-08	Xicor, Inc.	Nonvolatile electrically alterable memory

1987
- 1987-01-31 JP JP2108787A patent/JPH0772996B2/ja not_active Expired - Lifetime
1988
- 1988-01-28 US US07/149,606 patent/US4912749A/en not_active Expired - Lifetime
- 1988-01-29 EP EP88101335A patent/EP0280883B1/de not_active Expired - Lifetime
- 1988-01-29 KR KR1019880000784A patent/KR900009176B1/ko not_active IP Right Cessation
- 1988-01-29 DE DE8888101335T patent/DE3865702D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US4912749A (en)	1990-03-27
EP0280883B1 (de)	1991-10-23
KR880009379A (ko)	1988-09-15
KR900009176B1 (ko)	1990-12-24
EP0280883A2 (de)	1988-09-07
EP0280883A3 (en)	1989-02-08
JPH0772996B2 (ja)	1995-08-02
JPS63188896A (ja)	1988-08-04

Publication	Publication Date	Title
DE3875767D1 (de)	1992-12-17	Halbleiter-festwertspeichereinrichtung.
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE3850855D1 (de)	1994-09-01	Halbleitervorrichtung.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
KR880013252A (ko)	1988-11-30	반도체 기억장치
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE68923588D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE68918193D1 (de)	1994-10-20	Halbleiterspeicher.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE3887823D1 (de)	1994-03-24	Halbleiterspeicher.
DE3889354D1 (de)	1994-06-09	Halbleiteranordnung.
DE3853038D1 (de)	1995-03-23	Nichtflüchtige Halbleiterspeicheranordnung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
DE3882150D1 (de)	1993-08-12	Halbleiterspeichergeraet.

Legal Events

Date	Code	Title	Description
1992-11-19	8364	No opposition during term of opposition
1993-05-06	8327	Change in the person/name/address of the patent owner	Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T