DE69936461D1 - Magnetsensor und zugehöriges herstellungsverfahren - Google Patents

Magnetsensor und zugehöriges herstellungsverfahren

Info

Publication number: DE69936461D1
Authority: DE; Germany
Prior art keywords: magnetic sensor; associated manufacturing; manufacturing; magnetic; sensor
Prior art date: 1998-08-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69936461T

Other languages

English (en)

Other versions

DE69936461T2 (de

Inventor

Ichiro Shibasaki

Atsushi Okamoto

Takashi Yoshida

Ichiro Okada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Asahi Kasei Microdevices Corp

Original Assignee

Asahi Kasei Corp

Asahi Chemical Industry Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-08-07

Filing date

1999-08-06

Publication date

2007-08-16

1999-08-06 Application filed by Asahi Kasei Corp, Asahi Chemical Industry Co Ltd filed Critical Asahi Kasei Corp

2007-08-16 Publication of DE69936461D1 publication Critical patent/DE69936461D1/de

2008-03-13 Application granted granted Critical

2008-03-13 Publication of DE69936461T2 publication Critical patent/DE69936461T2/de

2019-08-07 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
- H10N52/85—Magnetic active materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Hall/Mr Elements (AREA)
Measuring Magnetic Variables (AREA)

DE69936461T 1998-08-07 1999-08-06 Magnetsensor und zugehöriges herstellungsverfahren Expired - Lifetime DE69936461T2 (de)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP22500898		1998-08-07
JP22500898		1998-08-07
JP23922598		1998-08-25
JP23922598		1998-08-25
PCT/JP1999/004280 WO2000008695A1 (fr)	1998-08-07	1999-08-06	Capteur magnetique et son procede de production

Publications (2)

Publication Number	Publication Date
DE69936461D1 true DE69936461D1 (de)	2007-08-16
DE69936461T2 DE69936461T2 (de)	2008-03-13

Family

ID=26526378

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69936461T Expired - Lifetime DE69936461T2 (de)	1998-08-07	1999-08-06	Magnetsensor und zugehöriges herstellungsverfahren

Country Status (9)

Country	Link
US (1)	US6590389B1 (de)
EP (2)	EP1124271B8 (de)
JP (1)	JP3916870B2 (de)
KR (1)	KR100431044B1 (de)
CN (1)	CN1185723C (de)
AU (1)	AU5066599A (de)
DE (1)	DE69936461T2 (de)
TW (1)	TW393567B (de)
WO (1)	WO2000008695A1 (de)

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CN100367526C (zh)	2001-10-01	2008-02-06	旭化成电子材料元件株式会社	霍尔器件和磁传感器
JP4653397B2 (ja) *	2002-01-15	2011-03-16	旭化成エレクトロニクス株式会社	ホール素子の製造方法
JP2004070543A (ja) *	2002-08-05	2004-03-04	Rohm Co Ltd	ポインティング制御回路付き磁気センサ
WO2004077585A1 (ja) *	2003-02-26	2004-09-10	Asahi Kasei Electronics Co., Ltd.	半導体センサ及びその製造方法
US7265543B2 (en) *	2003-04-15	2007-09-04	Honeywell International Inc.	Integrated set/reset driver and magneto-resistive sensor
US6903429B2 (en) *	2003-04-15	2005-06-07	Honeywell International, Inc.	Magnetic sensor integrated with CMOS
CN100438011C (zh) *	2004-03-24	2008-11-26	雅马哈株式会社	半导体装置、磁传感器和磁传感器单元
WO2007069680A1 (ja)	2005-12-16	2007-06-21	Asahi Kasei Emd Corporation	位置検出装置
JP5079525B2 (ja) *	2005-12-27	2012-11-21	旭化成株式会社	薄膜積層体及びそれを用いたＩｎＳｂ薄膜磁気センサ並びにその製造方法
US7420365B2 (en)	2006-03-15	2008-09-02	Honeywell International Inc.	Single chip MR sensor integrated with an RF transceiver
US7847536B2 (en) *	2006-08-31	2010-12-07	Itron, Inc.	Hall sensor with temperature drift control
CN101601148B (zh) *	2006-11-30	2012-03-28	旭化成株式会社	薄膜积层体和使用其的薄膜磁传感器及其制造方法
US8035932B2 (en) *	2007-09-20	2011-10-11	Hitachi Global Storage Technologies Netherlands B.V.	Lorentz magnetoresistive sensor with integrated signal amplification
US7800381B2 (en) *	2007-09-26	2010-09-21	Infineon Technologies Ag	Test structures, systems, and methods for semiconductor devices
US8559139B2 (en) *	2007-12-14	2013-10-15	Intel Mobile Communications GmbH	Sensor module and method for manufacturing a sensor module
JP5243606B2 (ja) *	2009-06-30	2013-07-24	旭化成エレクトロニクス株式会社	磁気センサ
CN102298126B (zh) *	2011-01-17	2013-03-13	江苏多维科技有限公司	独立封装的桥式磁场传感器
US8988072B2 (en)	2011-07-21	2015-03-24	Infineon Technologies Ag	Vertical hall sensor with high electrical symmetry
US9007060B2 (en)	2011-07-21	2015-04-14	Infineon Technologies Ag	Electronic device with ring-connected hall effect regions
US9312472B2 (en)	2012-02-20	2016-04-12	Infineon Technologies Ag	Vertical hall device with electrical 180 degree symmetry
KR20140077590A (ko) *	2012-12-14	2014-06-24	삼성전기주식회사	홀 센서 및 그 제조 방법
TWI619280B (zh) *	2014-04-01	2018-03-21	友達光電股份有限公司	感測元件
US9279864B2 (en) *	2014-05-16	2016-03-08	Infineon Technologies Ag	Sensor device and sensor arrangement
JP2016166782A (ja) *	2015-03-09	2016-09-15	エスアイアイ・セミコンダクタ株式会社	磁気センサ装置
CN105470382A (zh) *	2015-12-31	2016-04-06	江苏森尼克电子科技有限公司	一种具有延伸电极的磁敏器件及制造工艺
CN105470383A (zh) *	2015-12-31	2016-04-06	江苏森尼克电子科技有限公司	一种具有预埋电极的磁敏器件及制造工艺
JP6583208B2 (ja) *	2016-10-14	2019-10-02	株式会社デンソー	磁気検出素子
CN108075035B (zh) *	2016-11-18	2021-08-20	旭化成微电子株式会社	霍尔元件
CN107452873B (zh) *	2017-07-28	2020-09-04	苏州矩阵光电有限公司	一种霍尔元件及其制备方法
US20220187118A1 (en) *	2019-03-20	2022-06-16	Vitesco Technologies GmbH	Angle Detection Device

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JPS5948970A (ja) *	1982-09-13	1984-03-21	Pioneer Electronic Corp	磁電変換素子
JPS59159565A (ja) *	1983-03-02	1984-09-10	Sankyo Seiki Mfg Co Ltd	磁気検出装置
JPS6428576A (en) *	1987-07-24	1989-01-31	Ube Industries	Magnetic body detector
JPH0258880A (ja) *	1988-08-24	1990-02-28	Matsushita Electric Ind Co Ltd	半導体磁気抵抗素子
JPH06103761B2 (ja) *	1989-04-14	1994-12-14	株式会社村田製作所	４相差動回転センサー
JPH0348650A (ja) *	1989-07-14	1991-03-01	Mitsubishi Kasei Corp	単環性テルペン誘導体
JP2557998B2 (ja)	1990-04-04	1996-11-27	旭化成工業株式会社	ＩｎＡｓホール効果素子
DE69232236T2 (de) *	1991-07-16	2002-08-08	Asahi Kasei Kogyo K.K., Osaka	Halbleiter-sensor und seine herstellungsmethode
JP2793440B2 (ja) *	1991-07-16	1998-09-03	旭化成工業株式会社	磁気センサおよびその製造方法
JP3133102B2 (ja) *	1991-08-02	2001-02-05	新日本無線株式会社	半導体磁気抵抗素子
JPH0566133A (ja) *	1991-09-09	1993-03-19	Matsushita Electric Ind Co Ltd	磁気式回転センサ
JP3180378B2 (ja) *	1991-09-11	2001-06-25	松下電器産業株式会社	半導体薄膜の製造方法および半導体磁気抵抗素子の製造方法
JPH06125122A (ja) *	1992-10-09	1994-05-06	Nippon Autom Kk	磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ
JP2888074B2 (ja)	1993-01-25	1999-05-10	三菱電機株式会社	磁気抵抗素子
JP3288483B2 (ja)	1993-06-22	2002-06-04	川崎製鉄株式会社	耐衝撃性に優れる薄鋼板およびその製造方法
JPH07147438A (ja) *	1993-11-24	1995-06-06	Murata Mfg Co Ltd	磁電変換素子
JPH0888423A (ja) *	1994-09-19	1996-04-02	Asahi Chem Ind Co Ltd	磁気センサ
JP3681425B2 (ja)	1995-01-24	2005-08-10	旭化成エレクトロニクス株式会社	ＧａＡｓホール素子
JPH08242027A (ja)	1995-03-03	1996-09-17	Mitsubishi Electric Corp	磁気抵抗素子回路
JP3453967B2 (ja) *	1995-11-28	2003-10-06	松下電器産業株式会社	半導体薄膜磁気抵抗素子
JPH09203748A (ja) *	1996-01-29	1997-08-05	Tokin Corp	半導体加速度センサ
JPH09219547A (ja)	1996-02-09	1997-08-19	Sony Corp	磁気抵抗素子
JP3548761B2 (ja) *	1996-07-12	2004-07-28	株式会社東海ヒット	顕微鏡観察用透明恒温培養容器
JPH1074308A (ja) *	1996-08-30	1998-03-17	Hitachi Ltd	磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置

1999
- 1999-08-06 WO PCT/JP1999/004280 patent/WO2000008695A1/ja active IP Right Grant
- 1999-08-06 US US09/762,327 patent/US6590389B1/en not_active Expired - Lifetime
- 1999-08-06 EP EP99935099A patent/EP1124271B8/de not_active Expired - Lifetime
- 1999-08-06 CN CNB998104191A patent/CN1185723C/zh not_active Expired - Lifetime
- 1999-08-06 EP EP07008331A patent/EP1813954A1/de not_active Withdrawn
- 1999-08-06 TW TW088113543A patent/TW393567B/zh not_active IP Right Cessation
- 1999-08-06 AU AU50665/99A patent/AU5066599A/en not_active Abandoned
- 1999-08-06 JP JP2000564243A patent/JP3916870B2/ja not_active Expired - Lifetime
- 1999-08-06 KR KR10-2001-7001588A patent/KR100431044B1/ko not_active IP Right Cessation
- 1999-08-06 DE DE69936461T patent/DE69936461T2/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP1124271B1 (de)	2007-07-04
WO2000008695A1 (fr)	2000-02-17
EP1813954A1 (de)	2007-08-01
TW393567B (en)	2000-06-11
KR100431044B1 (ko)	2004-05-12
DE69936461T2 (de)	2008-03-13
EP1124271A4 (de)	2005-01-26
JP3916870B2 (ja)	2007-05-23
KR20010072297A (ko)	2001-07-31
EP1124271A1 (de)	2001-08-16
EP1124271B8 (de)	2007-09-19
AU5066599A (en)	2000-02-28
CN1185723C (zh)	2005-01-19
CN1316104A (zh)	2001-10-03
US6590389B1 (en)	2003-07-08

Publication	Publication Date	Title
DE69936461D1 (de)	2007-08-16	Magnetsensor und zugehöriges herstellungsverfahren
DE69940577D1 (de)	2009-04-23	Nahfeld Abtastkopf und Herstellungsverfahren dafür
DE69904168D1 (de)	2003-01-09	Magnetfeldfühler
DE69931221D1 (de)	2006-06-14	SOI-Substrat und Herstellungsverfahren dafür
DE69821278D1 (de)	2004-03-04	Magnetkern und Herstellungsverfahren
DE60143780D1 (de)	2011-02-17	Zusammengesetzte Sensorvorrichtung und zugehöriges Herstellungsverfahren
DE60020737D1 (de)	2005-07-14	Sic-einkristall und herstellungsverfahren dafür
DE69808776D1 (de)	2002-11-21	Magnetfeldfühler
DE69729534D1 (de)	2004-07-22	Magnetischer Fühler
DE60032676D1 (de)	2007-02-15	Drucksensor und Herstellungsverfahren desselben
DE60030703D1 (de)	2006-10-26	Informationsaufzeichnungselement und herstellungsverfahren
DE60113102D1 (de)	2005-10-06	Verbessertes sitzsystem und herstellmethode dafür
DE69834561D1 (de)	2006-06-22	Halbleiteranordnung und herstellungsverfahren dafür
DE69841064D1 (de)	2009-09-24	Widerstand und Herstellungsverfahren dafür
DE69942213D1 (de)	2010-05-12	Verbundmagnet, Herstellungsverfahren dafür und Magnetrolle
DE69809906D1 (de)	2003-01-16	Sensorvorrichtung und herstellungsverfahren dazu
GB2321780B (en)	1999-05-12	Sensor element and manufacturing method thereof
DE69826975D1 (de)	2004-11-18	Thermoelektrisches element und herstellungsverfahren dafür
DE69831999D1 (de)	2005-12-01	Magnetkopf und Herstellungsverfahren
EP1408562A4 (de)	2009-12-23	Magnetsensor und verfahren zu seiner herstellung
DE60027629D1 (de)	2006-06-08	Magnetaufzeichnungsgerät und -methode
DE69941200D1 (de)	2009-09-17	Elektrolumineszente Vorrichtung und Herstellungsverfahren
DE69904731D1 (de)	2003-02-06	Feinzerkleinerer und feinzerkleinerungsverfahren
DE69941874D1 (de)	2010-02-11	Optielektronisches bauelement und herstellungsverfahren
DE69934868D1 (de)	2007-03-08	Magnetischer mehrschichtsensor

Legal Events

Date	Code	Title	Description
2007-10-04	8327	Change in the person/name/address of the patent owner	Owner name: ASAHI KASEI EMD CORPORATION, TOKIO/TOKYO, JP
2008-07-24	8364	No opposition during term of opposition