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DE602004032015D1 - Verfahren zur herstellung eines kupferlegierungssputtertargets - Google Patents

Verfahren zur herstellung eines kupferlegierungssputtertargets

Info

Publication number
DE602004032015D1
DE602004032015D1 DE602004032015T DE602004032015T DE602004032015D1 DE 602004032015 D1 DE602004032015 D1 DE 602004032015D1 DE 602004032015 T DE602004032015 T DE 602004032015T DE 602004032015 T DE602004032015 T DE 602004032015T DE 602004032015 D1 DE602004032015 D1 DE 602004032015D1
Authority
DE
Germany
Prior art keywords
producing
copper alloy
sputter target
alloy sputter
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004032015T
Other languages
English (en)
Inventor
Takeo Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Eneos Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of DE602004032015D1 publication Critical patent/DE602004032015D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE602004032015T 2003-03-17 2004-02-19 Verfahren zur herstellung eines kupferlegierungssputtertargets Expired - Lifetime DE602004032015D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003071721 2003-03-17
PCT/JP2004/001914 WO2004083482A1 (ja) 2003-03-17 2004-02-19 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線

Publications (1)

Publication Number Publication Date
DE602004032015D1 true DE602004032015D1 (de) 2011-05-12

Family

ID=33027699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032015T Expired - Lifetime DE602004032015D1 (de) 2003-03-17 2004-02-19 Verfahren zur herstellung eines kupferlegierungssputtertargets

Country Status (8)

Country Link
US (2) US7740721B2 (de)
EP (2) EP2264215A3 (de)
JP (1) JP4223511B2 (de)
KR (1) KR100700885B1 (de)
CN (1) CN100439558C (de)
DE (1) DE602004032015D1 (de)
TW (1) TWI248468B (de)
WO (1) WO2004083482A1 (de)

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EP2626444A3 (de) * 2003-12-25 2013-10-16 JX Nippon Mining & Metals Corporation Anordnung aus Kupfer- oder Kupferlegierungstarget und Kupferlegierungsträgerplatte
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JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
EP1895024A4 (de) * 2005-06-23 2009-12-23 Nippon Mining Co Kupferfolie für leiterplatte
JP4756458B2 (ja) * 2005-08-19 2011-08-24 三菱マテリアル株式会社 パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット
US7749361B2 (en) * 2006-06-02 2010-07-06 Applied Materials, Inc. Multi-component doping of copper seed layer
CN101501820B (zh) 2006-08-10 2012-11-28 株式会社爱发科 导电膜形成方法、薄膜晶体管、带薄膜晶体管的面板、及薄膜晶体管的制造方法
US20100000860A1 (en) * 2006-09-08 2010-01-07 Tosoh Smd, Inc. Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same
US20100013096A1 (en) * 2006-10-03 2010-01-21 Nippon Mining & Metals Co., Ltd. Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
US20090065354A1 (en) * 2007-09-12 2009-03-12 Kardokus Janine K Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof
EP2330231B1 (de) * 2008-09-30 2017-02-22 JX Nippon Mining & Metals Corporation Verfahren zur herstellung einer zerstäubungsquelle für hochreines kupfer oder für eine hochreine kupferlegierung
WO2010038641A1 (ja) 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅及び電解による高純度銅の製造方法
JP5118618B2 (ja) * 2008-12-24 2013-01-16 Ｊｘ日鉱日石金属株式会社 高純度形状記憶合金ターゲット及び同合金薄膜
JP5463794B2 (ja) * 2009-08-24 2014-04-09 三菱マテリアル株式会社 半導体装置及びその製造方法
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JP5708315B2 (ja) * 2011-07-05 2015-04-30 三菱マテリアル株式会社 銅合金製スパッタリングターゲット
EP2837710B1 (de) * 2011-09-14 2019-05-15 JX Nippon Mining & Metals Corporation Verfahren zur herstellung eines hochreinen kupfer-mangan-legierungs-sputtertarget
KR20130121199A (ko) * 2011-09-14 2013-11-05 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리망간 합금 스퍼터링 타깃
CN103827349B (zh) 2011-09-30 2016-08-24 吉坤日矿日石金属株式会社 溅射靶及其制造方法
WO2013111609A1 (ja) 2012-01-23 2013-08-01 Jx日鉱日石金属株式会社 高純度銅マンガン合金スパッタリングターゲット
KR20140091701A (ko) 2012-01-25 2014-07-22 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리 크롬 합금 스퍼터링 타겟
KR20150053805A (ko) 2013-03-07 2015-05-18 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 구리 합금 스퍼터링 타깃
JP2015195282A (ja) * 2014-03-31 2015-11-05 東京エレクトロン株式会社 成膜方法、半導体製造方法及び半導体装置
JP5783293B1 (ja) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 円筒型スパッタリングターゲット用素材
CN107109633B (zh) 2015-05-21 2020-08-11 捷客斯金属株式会社 铜合金溅射靶及其制造方法
CN105463244A (zh) * 2015-12-15 2016-04-06 苏州华安矿业科技有限公司 矿用多孔喷头
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN115261655A (zh) * 2022-08-01 2022-11-01 宁波江丰电子材料股份有限公司 一种超高纯CuAl合金及其制备方法与用途

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Also Published As

Publication number Publication date
JP4223511B2 (ja) 2009-02-12
KR20050108384A (ko) 2005-11-16
EP1602747B1 (de) 2011-03-30
CN1771349A (zh) 2006-05-10
WO2004083482A1 (ja) 2004-09-30
EP2264215A3 (de) 2011-03-16
TW200422415A (en) 2004-11-01
KR100700885B1 (ko) 2007-03-29
JPWO2004083482A1 (ja) 2006-06-22
US7740721B2 (en) 2010-06-22
CN100439558C (zh) 2008-12-03
EP1602747A4 (de) 2008-08-27
US9765425B2 (en) 2017-09-19
EP1602747A1 (de) 2005-12-07
EP2264215A2 (de) 2010-12-22
TWI248468B (en) 2006-02-01
US20060088436A1 (en) 2006-04-27
US20100219070A1 (en) 2010-09-02

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