DE60106675D1 - Verdampfer - Google Patents
VerdampferInfo
- Publication number
- DE60106675D1 DE60106675D1 DE60106675T DE60106675T DE60106675D1 DE 60106675 D1 DE60106675 D1 DE 60106675D1 DE 60106675 T DE60106675 T DE 60106675T DE 60106675 T DE60106675 T DE 60106675T DE 60106675 D1 DE60106675 D1 DE 60106675D1
- Authority
- DE
- Germany
- Prior art keywords
- evaporator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20825700P | 2000-05-31 | 2000-05-31 | |
US208257P | 2000-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60106675D1 true DE60106675D1 (de) | 2004-12-02 |
DE60106675T2 DE60106675T2 (de) | 2005-12-01 |
Family
ID=22773903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60106675T Expired - Lifetime DE60106675T2 (de) | 2000-05-31 | 2001-05-29 | Verdampfer |
Country Status (5)
Country | Link |
---|---|
US (1) | US6607785B2 (de) |
EP (1) | EP1160355B1 (de) |
JP (1) | JP4789126B2 (de) |
KR (1) | KR100794201B1 (de) |
DE (1) | DE60106675T2 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6790475B2 (en) * | 2002-04-09 | 2004-09-14 | Wafermasters Inc. | Source gas delivery |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US20040134327A1 (en) * | 2002-11-20 | 2004-07-15 | Roberto Capodieci | Apparatus and method for shaped cutting and slitting of food products |
DE10256038A1 (de) * | 2002-11-30 | 2004-06-17 | Applied Films Gmbh & Co. Kg | Bedampfungsvorrichtung |
US6868869B2 (en) * | 2003-02-19 | 2005-03-22 | Advanced Technology Materials, Inc. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
JP4714422B2 (ja) | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
JP4689969B2 (ja) | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Iva族およびvia族化合物の調製 |
US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US7261118B2 (en) * | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
JP2005272232A (ja) * | 2004-03-25 | 2005-10-06 | Canon Inc | ダイヤモンドおよび炭素繊維の集合体およびそれらの製造方法 |
AU2005245634B2 (en) * | 2004-05-20 | 2010-07-01 | Akzo Nobel Chemicals International B.V. | Bubbler for constant vapor delivery of a solid chemical |
US20060037540A1 (en) * | 2004-08-20 | 2006-02-23 | Rohm And Haas Electronic Materials Llc | Delivery system |
US7722720B2 (en) * | 2004-12-08 | 2010-05-25 | Rohm And Haas Electronic Materials Llc | Delivery device |
US20080191153A1 (en) * | 2005-03-16 | 2008-08-14 | Advanced Technology Materials, Inc. | System For Delivery Of Reagents From Solid Sources Thereof |
US7451621B2 (en) * | 2005-05-25 | 2008-11-18 | Praxair Technology, Inc. | Bubble formation in liquid such as molten glass |
DE102005030862B4 (de) * | 2005-07-01 | 2009-12-24 | Sintec Keramik Gmbh | Erstbenetzungshilfsmaterial für einen Verdampferkörper, seine Verwendung zum Herrichten der Verdampferfläche eines Verdampferkörpers und ein elektrisch beheizbarer keramischer Verdampferkörper |
JP4710481B2 (ja) * | 2005-08-17 | 2011-06-29 | 住友化学株式会社 | 有機金属化合物供給容器 |
GB2432371B (en) | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
US8603580B2 (en) * | 2005-11-28 | 2013-12-10 | Msp Corporation | High stability and high capacity precursor vapor generation for thin film deposition |
US8132794B2 (en) * | 2005-11-29 | 2012-03-13 | Air Diffusion Systems | Fine bubble delivery for potable water, wastewater, and clean water treatment |
JP4527670B2 (ja) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
EP1860208B1 (de) * | 2006-05-22 | 2014-10-15 | Rohm and Haas Electronic Materials LLC | Schicht Abscheidungsverfahren |
KR20090018095A (ko) * | 2006-05-30 | 2009-02-19 | 우베 고산 가부시키가이샤 | 유기금속 화합물의 공급 장치 |
US20080018004A1 (en) * | 2006-06-09 | 2008-01-24 | Air Products And Chemicals, Inc. | High Flow GaCl3 Delivery |
JP5009367B2 (ja) * | 2006-06-09 | 2012-08-22 | ソイテック | 三塩化ガリウムの大容量送達システム |
US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US9109287B2 (en) * | 2006-10-19 | 2015-08-18 | Air Products And Chemicals, Inc. | Solid source container with inlet plenum |
GB2444143B (en) * | 2006-11-27 | 2009-10-28 | Sumitomo Chemical Co | Apparatus of supplying organometallic compound |
JP5437594B2 (ja) | 2007-06-05 | 2014-03-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
US8142847B2 (en) | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
JP4900110B2 (ja) * | 2007-07-20 | 2012-03-21 | 東京エレクトロン株式会社 | 薬液気化タンク及び薬液処理システム |
US7659414B2 (en) | 2007-07-20 | 2010-02-09 | Rohm And Haas Company | Method of preparing organometallic compounds |
US8348248B2 (en) | 2009-03-11 | 2013-01-08 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Bubbling supply system for stable precursor supply |
JP5690498B2 (ja) | 2009-03-27 | 2015-03-25 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 基体上に膜を堆積する方法および気化前駆体化合物を送達する装置 |
US8491720B2 (en) * | 2009-04-10 | 2013-07-23 | Applied Materials, Inc. | HVPE precursor source hardware |
KR200454322Y1 (ko) | 2009-08-26 | 2011-06-28 | 주식회사 테라세미콘 | 증착가스 공급장치 |
EP2339048B1 (de) | 2009-09-14 | 2016-12-07 | Rohm and Haas Electronic Materials, L.L.C. | Verfahren zum Abscheiden von organometallischen Verbindungen |
CN102597310B (zh) | 2009-11-02 | 2015-02-04 | 西格玛-奥吉奇有限责任公司 | 固态前体输送组件以及相关方法 |
US8758515B2 (en) * | 2010-08-09 | 2014-06-24 | Rohm And Haas Electronic Materials Llc | Delivery device and method of use thereof |
WO2012071661A1 (en) * | 2010-11-30 | 2012-06-07 | Socpra Sciences Et Genie S.E.C. | Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith |
US8997775B2 (en) | 2011-05-24 | 2015-04-07 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
US8776821B2 (en) | 2011-05-24 | 2014-07-15 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
JP2015519478A (ja) | 2012-05-31 | 2015-07-09 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | バッチ蒸着のための高材料流束によるソース試薬に基づく流体の送出 |
US9243325B2 (en) | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
US20140026977A1 (en) * | 2012-07-25 | 2014-01-30 | William Kimmerle | Chemical precursor bubbler assembly |
DE102012021527A1 (de) * | 2012-10-31 | 2014-04-30 | Dockweiler Ag | Vorrichtung zur Erzeugung eines Gasgemisches |
KR101416977B1 (ko) * | 2012-12-27 | 2014-07-08 | 주식회사 선익시스템 | 증발원 및 이를 구비한 증착장치 |
WO2015164029A1 (en) * | 2014-04-21 | 2015-10-29 | Entegris, Inc. | Solid vaporizer |
DE102015108430A1 (de) | 2015-05-28 | 2016-12-01 | Dockweiler Ag | Vorrichtung zur Erzeugung eines Gases mit einer ringzylindrischen Reaktionskammer |
US10041873B2 (en) | 2016-05-02 | 2018-08-07 | Kla-Tencor Corporation | Porosity measurement of semiconductor structures |
US10145674B2 (en) * | 2016-05-02 | 2018-12-04 | Kla-Tencor Corporation | Measurement of semiconductor structures with capillary condensation |
US10281263B2 (en) * | 2016-05-02 | 2019-05-07 | Kla-Tencor Corporation | Critical dimension measurements with gaseous adsorption |
TWI617764B (zh) * | 2017-06-06 | 2018-03-11 | 江蘇南大光電材料股份有限公司 | 固體金屬有機化合物的封裝容器 |
KR102344996B1 (ko) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
US11166441B2 (en) | 2018-07-13 | 2021-11-09 | Versum Materials Us, Llc | Vapor delivery container with flow distributor |
KR102716921B1 (ko) * | 2021-10-25 | 2024-10-14 | (주)덕산테코피아 | 반도체 제조장비용 캐니스터 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2569207B1 (fr) * | 1984-08-14 | 1986-11-14 | Mellet Robert | Procede et dispositif d'obtention d'un courant gazeux contenant un compose a l'etat de vapeur, utilisable notamment pour introduire ce compose dans un reacteur d'epitaxie |
JPS6311598A (ja) * | 1986-07-03 | 1988-01-19 | Toyo Sutoufuaa Chem:Kk | 有機金属気相成長用シリンダ− |
DE3801147A1 (de) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
JPH0623565Y2 (ja) * | 1988-03-28 | 1994-06-22 | 日本電気株式会社 | Cvd装置用原料収納容器 |
JPH01318229A (ja) * | 1988-06-20 | 1989-12-22 | Toshiba Corp | 半導体気相成長装置 |
JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
GB2223509B (en) * | 1988-10-04 | 1992-08-05 | Stc Plc | Vapour phase processing |
JPH02172889A (ja) * | 1988-12-26 | 1990-07-04 | Nippon Mining Co Ltd | 気相成長用シリンダー |
US5711816A (en) * | 1990-07-06 | 1998-01-27 | Advanced Technolgy Materials, Inc. | Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same |
JPH05117864A (ja) * | 1991-06-25 | 1993-05-14 | Anelva Corp | Cvd装置 |
GB9116381D0 (en) * | 1991-07-30 | 1991-09-11 | Shell Int Research | Method for deposition of a metal |
EP0555614A1 (de) * | 1992-02-13 | 1993-08-18 | International Business Machines Corporation | Organo-Metall-Gas Quelle für MOVPE- und MOMBE-Verfahren |
JPH07278818A (ja) * | 1994-04-14 | 1995-10-24 | Murata Mfg Co Ltd | Cvd粉体原料用気化器 |
US5553395A (en) * | 1995-05-31 | 1996-09-10 | Hughes Aircraft Company | Bubbler for solid metal organic source material and method of producing saturated carrying gas |
JPH1067594A (ja) * | 1996-08-26 | 1998-03-10 | Sony Corp | 有機金属気相成長装置 |
JPH10223540A (ja) * | 1997-02-03 | 1998-08-21 | Sony Corp | 有機金属気相成長装置 |
US6444038B1 (en) * | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
-
2001
- 2001-05-29 EP EP20010304698 patent/EP1160355B1/de not_active Expired - Lifetime
- 2001-05-29 DE DE60106675T patent/DE60106675T2/de not_active Expired - Lifetime
- 2001-05-30 JP JP2001162191A patent/JP4789126B2/ja not_active Expired - Fee Related
- 2001-05-30 US US09/870,245 patent/US6607785B2/en not_active Expired - Fee Related
- 2001-05-31 KR KR1020010030387A patent/KR100794201B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20020078894A1 (en) | 2002-06-27 |
EP1160355B1 (de) | 2004-10-27 |
US6607785B2 (en) | 2003-08-19 |
JP4789126B2 (ja) | 2011-10-12 |
DE60106675T2 (de) | 2005-12-01 |
EP1160355A2 (de) | 2001-12-05 |
EP1160355A3 (de) | 2003-10-29 |
KR100794201B1 (ko) | 2008-01-14 |
JP2002083777A (ja) | 2002-03-22 |
KR20010109202A (ko) | 2001-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |