DE3777522D1 - Verfahren zum herstellen einer gemischten struktur fuer halbleiteranordnung. - Google Patents
Verfahren zum herstellen einer gemischten struktur fuer halbleiteranordnung.Info
- Publication number
- DE3777522D1 DE3777522D1 DE8787115028T DE3777522T DE3777522D1 DE 3777522 D1 DE3777522 D1 DE 3777522D1 DE 8787115028 T DE8787115028 T DE 8787115028T DE 3777522 T DE3777522 T DE 3777522T DE 3777522 D1 DE3777522 D1 DE 3777522D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- mixed structure
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4332—Bellows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24525286 | 1986-10-17 | ||
JP5652887A JP2510557B2 (ja) | 1986-10-17 | 1987-03-13 | 複合構造体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3777522D1 true DE3777522D1 (de) | 1992-04-23 |
Family
ID=26397487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787115028T Expired - Lifetime DE3777522D1 (de) | 1986-10-17 | 1987-10-14 | Verfahren zum herstellen einer gemischten struktur fuer halbleiteranordnung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4819857A (de) |
EP (1) | EP0264122B1 (de) |
DE (1) | DE3777522D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4927069A (en) * | 1988-07-15 | 1990-05-22 | Sanken Electric Co., Ltd. | Soldering method capable of providing a joint of reduced thermal resistance |
DE3914333A1 (de) * | 1989-04-29 | 1990-10-31 | Hoechst Ceram Tec Ag | Pumpenkolben fuer axialkolbenpumpen |
JPH0357230A (ja) * | 1989-07-25 | 1991-03-12 | Mitsubishi Electric Corp | 半導体基板と支持板とのロウ付け方法 |
EP0460286A3 (en) * | 1990-06-06 | 1992-02-26 | Siemens Aktiengesellschaft | Method and arrangement for bonding a semiconductor component to a substrate or for finishing a semiconductor/substrate connection by contactless pressing |
US5906310A (en) * | 1994-11-10 | 1999-05-25 | Vlt Corporation | Packaging electrical circuits |
JP2732823B2 (ja) * | 1995-02-02 | 1998-03-30 | ヴィエルティー コーポレーション | はんだ付け方法 |
CA2156941A1 (en) * | 1995-08-21 | 1997-02-22 | Jonathan H. Orchard-Webb | Method of making electrical connections to integrated circuit |
GB2316225A (en) * | 1996-08-06 | 1998-02-18 | Northern Telecom Ltd | Semiconductor photodetector packaging |
US6070321A (en) * | 1997-07-09 | 2000-06-06 | International Business Machines Corporation | Solder disc connection |
US6095400A (en) * | 1997-12-04 | 2000-08-01 | Ford Global Technologies, Inc. | Reinforced solder preform |
US6316737B1 (en) | 1999-09-09 | 2001-11-13 | Vlt Corporation | Making a connection between a component and a circuit board |
JP3946393B2 (ja) * | 1999-10-19 | 2007-07-18 | 株式会社東芝 | 階層構造をもつ並列計算機 |
US7443229B1 (en) | 2001-04-24 | 2008-10-28 | Picor Corporation | Active filtering |
AU2002318144A1 (en) * | 2001-05-24 | 2003-01-29 | Fry's Metals, Inc. | Thermal interface material and heat sink configuration |
MXPA06005908A (es) * | 2001-05-24 | 2007-01-26 | Fry Metals Inc | Material termico de interfaz y preformas para soldar. |
US6848610B2 (en) * | 2003-03-25 | 2005-02-01 | Intel Corporation | Approaches for fluxless soldering |
US7621435B2 (en) * | 2004-06-17 | 2009-11-24 | The Regents Of The University Of California | Designs and fabrication of structural armor |
US7723830B2 (en) * | 2006-01-06 | 2010-05-25 | International Rectifier Corporation | Substrate and method for mounting silicon device |
EP2142489A1 (de) * | 2007-04-24 | 2010-01-13 | CeramTec AG | Bauteil mit einem keramischen körper mit metallisierter oberfläche |
US8076773B2 (en) * | 2007-12-26 | 2011-12-13 | The Bergquist Company | Thermal interface with non-tacky surface |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648357A (en) * | 1969-07-31 | 1972-03-14 | Gen Dynamics Corp | Method for sealing microelectronic device packages |
DE2032939B2 (de) * | 1970-07-03 | 1975-05-07 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zum Auflöten eines Halbleiterkörpers auf einen Träger |
US3711939A (en) * | 1970-11-10 | 1973-01-23 | M Stoll | Method and apparatus for sealing |
JPS5614069A (en) * | 1979-07-16 | 1981-02-10 | Nec Corp | Soldering method and soldering material |
DE2939666C2 (de) * | 1979-09-29 | 1982-07-15 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zur lunkerfreien Verlötung eines metallisierten Halbleiterplättchens mit einem Träger |
US4645116A (en) * | 1982-10-08 | 1987-02-24 | At&T Bell Laboratories | Fluxless bonding of microelectronic chips |
JPH0673364B2 (ja) * | 1983-10-28 | 1994-09-14 | 株式会社日立製作所 | 集積回路チップ冷却装置 |
US4574470A (en) * | 1984-03-19 | 1986-03-11 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip mounting system |
JPS60214536A (ja) * | 1984-04-09 | 1985-10-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61125025A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 半導体装置の製造方法 |
DE3442537A1 (de) * | 1984-11-22 | 1986-05-22 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | Verfahren zum blasenfreien verbinden eines grossflaechigen halbleiter-bauelements mit einem als substrat dienenden bauteil mittels loeten |
US4604644A (en) * | 1985-01-28 | 1986-08-05 | International Business Machines Corporation | Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making |
US4709849A (en) * | 1985-11-27 | 1987-12-01 | Fry Metals, Inc. | Solder preform and methods employing the same |
-
1987
- 1987-10-14 DE DE8787115028T patent/DE3777522D1/de not_active Expired - Lifetime
- 1987-10-14 EP EP87115028A patent/EP0264122B1/de not_active Expired - Lifetime
- 1987-10-19 US US07/109,449 patent/US4819857A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0264122B1 (de) | 1992-03-18 |
EP0264122A3 (en) | 1989-06-07 |
US4819857A (en) | 1989-04-11 |
EP0264122A2 (de) | 1988-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3780369D1 (de) | Verfahren zum herstellen einer halbleiterstruktur. | |
DE3583934D1 (de) | Verfahren zum herstellen einer halbleiterverbundanordnung. | |
DE3686600D1 (de) | Verfahren zum herstellen einer harzumhuellten halbleiteranordnung. | |
DE3584757D1 (de) | Verfahren zum herstellen einer zwei-wannen-cmos-halbleiterstruktur. | |
DE3586109D1 (de) | Verfahren zum herstellen einer verbindungsstruktur von einer halbleiteranordnung. | |
DE3777522D1 (de) | Verfahren zum herstellen einer gemischten struktur fuer halbleiteranordnung. | |
DE3587231D1 (de) | Verfahren zum herstellen einer dmos-halbleiteranordnung. | |
DE3586732D1 (de) | Verfahren zum herstellen einer dreidimentionaler halbleiteranordung. | |
DE3786914D1 (de) | Verfahren zum herstellen einer integrierten schaltungspackungsstruktur. | |
DE3686453D1 (de) | Verfahren zum herstellen einer duennen halbleiterschicht. | |
DE3577371D1 (de) | Apparat zum herstellen einer halbleiteranordnung. | |
DE3781247D1 (de) | Verfahren zum herstellen einer halbleiteranordnung mit mindestens zwei halbleiterchips. | |
DE69004842D1 (de) | Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. | |
DE69022087D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE68917995D1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung. | |
DE3483280D1 (de) | Verfahren zum herstellen einer mehrschicht-halbleiteranordnung. | |
DE3684676D1 (de) | Verfahren zum herstellen von halbleitersubstraten. | |
DE3783405D1 (de) | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. | |
DE68919549D1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung. | |
DE3686315D1 (de) | Verfahren zur herstellung einer halbleiterstruktur. | |
DE3579174D1 (de) | Verfahren zum herstellen einer halbleiterspeicherstruktur und halbleiterspeicherstruktur. | |
DE3671324D1 (de) | Verfahren zum herstellen einer halbleiteranordnung. | |
DE3784605D1 (de) | Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung. | |
DE68906034D1 (de) | Verfahren zum herstellen einer halbleiteranordnung. | |
DE3574525D1 (de) | Verfahren zum herstellen von kontakten auf einer halbleitervorrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |