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DE3686600D1 - Verfahren zum herstellen einer harzumhuellten halbleiteranordnung. - Google Patents

Verfahren zum herstellen einer harzumhuellten halbleiteranordnung.

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Publication number
DE3686600D1
DE3686600D1 DE8686108142T DE3686600T DE3686600D1 DE 3686600 D1 DE3686600 D1 DE 3686600D1 DE 8686108142 T DE8686108142 T DE 8686108142T DE 3686600 T DE3686600 T DE 3686600T DE 3686600 D1 DE3686600 D1 DE 3686600D1
Authority
DE
Germany
Prior art keywords
residuated
producing
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686108142T
Other languages
English (en)
Other versions
DE3686600T2 (de
Inventor
Shiro Kobayashi
Masahiko Itoh
Akira Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3686600D1 publication Critical patent/DE3686600D1/de
Application granted granted Critical
Publication of DE3686600T2 publication Critical patent/DE3686600T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
DE8686108142T 1985-06-14 1986-06-13 Verfahren zum herstellen einer harzumhuellten halbleiteranordnung. Expired - Fee Related DE3686600T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128068A JPS61287155A (ja) 1985-06-14 1985-06-14 半導体装置及び半導体装置の製造方法

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DE3686600D1 true DE3686600D1 (de) 1992-10-08
DE3686600T2 DE3686600T2 (de) 1993-04-15

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US (1) US4821148A (de)
EP (1) EP0205190B1 (de)
JP (1) JPS61287155A (de)
KR (1) KR900007303B1 (de)
DE (1) DE3686600T2 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5104734A (en) * 1988-06-03 1992-04-14 International Business Machines Corporation Method for improving adhesion between a polyimide layer and a metal and the article obtained
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法
WO1990011617A1 (en) * 1989-03-28 1990-10-04 Nippon Steel Corporation Resin-coated bonding wire, method of producing the same and semiconductor device
US4916519A (en) * 1989-05-30 1990-04-10 International Business Machines Corporation Semiconductor package
US5367766A (en) * 1990-08-01 1994-11-29 Staktek Corporation Ultra high density integrated circuit packages method
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
WO1992003035A1 (en) * 1990-08-01 1992-02-20 Staktek Corporation Ultra high density integrated circuit packages, method and apparatus
US5475920A (en) * 1990-08-01 1995-12-19 Burns; Carmen D. Method of assembling ultra high density integrated circuit packages
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
US5448450A (en) * 1991-08-15 1995-09-05 Staktek Corporation Lead-on-chip integrated circuit apparatus
US5316573A (en) * 1992-03-12 1994-05-31 International Business Machines Corporation Corrosion inhibition with CU-BTA
US5310702A (en) * 1992-03-20 1994-05-10 Kulicke And Soffa Industries, Inc. Method of preventing short-circuiting of bonding wires
US5702985A (en) * 1992-06-26 1997-12-30 Staktek Corporation Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method
US5484959A (en) * 1992-12-11 1996-01-16 Staktek Corporation High density lead-on-package fabrication method and apparatus
US6205654B1 (en) 1992-12-11 2001-03-27 Staktek Group L.P. Method of manufacturing a surface mount package
US5801437A (en) * 1993-03-29 1998-09-01 Staktek Corporation Three-dimensional warp-resistant integrated circuit module method and apparatus
US5369056A (en) 1993-03-29 1994-11-29 Staktek Corporation Warp-resistent ultra-thin integrated circuit package fabrication method
US5644161A (en) * 1993-03-29 1997-07-01 Staktek Corporation Ultra-high density warp-resistant memory module
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US5820014A (en) 1993-11-16 1998-10-13 Form Factor, Inc. Solder preforms
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
KR0165299B1 (ko) * 1994-11-11 1999-03-20 김광호 다층 광 기록 디스크
EP0792517B1 (de) * 1994-11-15 2003-10-22 Formfactor, Inc. Elektrische kontaktstruktur aus flexiblem draht
JP2002509639A (ja) * 1994-11-15 2002-03-26 フォームファクター,インコーポレイテッド 超小型電子素子の相互接続要素
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
GB9425030D0 (en) 1994-12-09 1995-02-08 Alpha Metals Ltd Silver plating
GB9425031D0 (en) * 1994-12-09 1995-02-08 Alpha Metals Ltd Printed circuit board manufacture
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US6025642A (en) * 1995-08-17 2000-02-15 Staktek Corporation Ultra high density integrated circuit packages
KR100215181B1 (ko) * 1995-10-06 1999-08-16 포만 제프리 엘 도전성 은/증합체 복합체의 부식 및 용해 방지구조물
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US6905587B2 (en) 1996-03-22 2005-06-14 Ronald Redline Method for enhancing the solderability of a surface
US6544397B2 (en) 1996-03-22 2003-04-08 Ronald Redline Method for enhancing the solderability of a surface
TW335526B (en) * 1996-07-15 1998-07-01 Matsushita Electron Co Ltd A semiconductor and the manufacturing method
KR100202668B1 (ko) * 1996-07-30 1999-07-01 구본준 크랙 방지를 위한 반도체 패키지와 그 제조방법 및 제조장치
US5773132A (en) * 1997-02-28 1998-06-30 International Business Machines Corporation Protecting copper dielectric interface from delamination
US5945732A (en) 1997-03-12 1999-08-31 Staktek Corporation Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package
US5976964A (en) 1997-04-22 1999-11-02 Micron Technology, Inc. Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US6600215B1 (en) 1998-04-02 2003-07-29 Micron Technology, Inc. Method and apparatus for coupling a semiconductor die to die terminals
US6177726B1 (en) * 1999-02-11 2001-01-23 Philips Electronics North America Corporation SiO2 wire bond insulation in semiconductor assemblies
USRE45842E1 (en) 1999-02-17 2016-01-12 Ronald Redline Method for enhancing the solderability of a surface
JP3367458B2 (ja) * 1999-03-30 2003-01-14 株式会社デンソー 半導体装置の製造方法
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
US6207551B1 (en) * 1999-08-24 2001-03-27 Conexant Systems, Inc. Method and apparatus using formic acid vapor as reducing agent for copper wirebonding
US6572387B2 (en) 1999-09-24 2003-06-03 Staktek Group, L.P. Flexible circuit connector for stacked chip module
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
US6608763B1 (en) 2000-09-15 2003-08-19 Staktek Group L.P. Stacking system and method
EP1215724B1 (de) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Bonddrahtverbundene Halbleiteranordnung mit niedriger Kapazitätskopplung
DE10108695A1 (de) * 2001-02-23 2002-09-05 Varta Geraetebatterie Gmbh Galvanisches Element mit mindestens einer lithiuminterkalierenden Elektrode
US6462408B1 (en) * 2001-03-27 2002-10-08 Staktek Group, L.P. Contact member stacking system and method
US7132736B2 (en) * 2001-10-31 2006-11-07 Georgia Tech Research Corporation Devices having compliant wafer-level packages with pillars and methods of fabrication
US6849806B2 (en) * 2001-11-16 2005-02-01 Texas Instruments Incorporated Electrical apparatus having resistance to atmospheric effects and method of manufacture therefor
TWI287282B (en) * 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
US6866255B2 (en) * 2002-04-12 2005-03-15 Xerox Corporation Sputtered spring films with low stress anisotropy
US6621141B1 (en) 2002-07-22 2003-09-16 Palo Alto Research Center Incorporated Out-of-plane microcoil with ground-plane structure
US20040119172A1 (en) * 2002-12-18 2004-06-24 Downey Susan H. Packaged IC using insulated wire
MY134318A (en) * 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
US6900525B2 (en) * 2003-05-21 2005-05-31 Kyocera America, Inc. Semiconductor package having filler metal of gold/silver/copper alloy
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US8330485B2 (en) * 2004-10-21 2012-12-11 Palo Alto Research Center Incorporated Curved spring structure with downturned tip
US7230440B2 (en) * 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
KR101360732B1 (ko) * 2007-06-27 2014-02-07 엘지이노텍 주식회사 발광 다이오드 패키지
EP2444999A4 (de) 2009-06-18 2012-11-14 Rohm Co Ltd Halbleiterbauelement
US20130277825A1 (en) * 2012-04-18 2013-10-24 Texas Instruments Incorporated Method for Preventing Corrosion of Copper-Aluminum Intermetallic Compounds
US20160028177A1 (en) * 2013-02-18 2016-01-28 Autonetworks Technologies, Ltd. Electric connection structure and terminal
WO2015000592A1 (en) * 2013-07-03 2015-01-08 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Coated bond wires for die packages and methods of manufacturing said coated bond wires
DE102015108736A1 (de) * 2015-06-02 2016-12-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2018037639A (ja) * 2016-08-31 2018-03-08 株式会社東芝 半導体パッケージ、及び半導体パッケージの製造方法
JP2020521878A (ja) * 2017-05-26 2020-07-27 ユニバーシティー・オブ・ノース・テキサス Cuワイヤでボンディングしたデバイス組立におけるAlボンドパッドの腐食の機構的検討及び防止
CN113614141B (zh) * 2019-03-27 2024-02-20 住友电木株式会社 密封用树脂组合物和半导体装置
CN112011008A (zh) * 2019-05-31 2020-12-01 罗门哈斯电子材料有限责任公司 抗蚀剂组合物、其制造方法及包含其的制品

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038157B2 (de) * 1972-11-28 1975-12-08
JPS50110279A (de) * 1974-02-06 1975-08-30
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS5923009B2 (ja) * 1979-06-26 1984-05-30 日本ビクター株式会社 磁気記録媒体
US4327369A (en) * 1979-08-06 1982-04-27 Hi-Tech Industries, Inc. Encapsulating moisture-proof coating
US4572853A (en) * 1980-06-05 1986-02-25 Tokyo Shibaura Denki Kabushiki Kaisha Resin encapsulation type semiconductor device
JPS5769767A (en) * 1980-10-20 1982-04-28 Toshiba Corp Resin sealed type semiconductor device
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
WO1982003727A1 (en) * 1981-04-21 1982-10-28 Seiichiro Aigoo Method of making a semiconductor device having a projecting,plated electrode
US4373656A (en) * 1981-07-17 1983-02-15 Western Electric Company, Inc. Method of preserving the solderability of copper
US4415629A (en) * 1982-03-22 1983-11-15 Electric Power Research Institute, Inc. Insulated conductor
JPS58163652A (ja) * 1982-03-25 1983-09-28 トーレ・シリコーン株式会社 連続的な異相構造を有するシリコ−ン1体成形物,およびその製造方法
JPS58166747A (ja) * 1982-03-29 1983-10-01 Toshiba Corp 樹脂封止型半導体装置
EP0093194B1 (de) * 1982-04-30 1988-08-31 Matsushita Electric Industrial Co., Ltd. Magnetisches Aufzeichnungsmedium
JPS58202556A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 半導体装置
JPS602681A (ja) * 1983-06-16 1985-01-08 Murata Mfg Co Ltd 銅または銅合金の防錆処理方法

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Publication number Publication date
EP0205190A2 (de) 1986-12-17
EP0205190A3 (en) 1987-07-29
JPH045267B2 (de) 1992-01-30
US4821148A (en) 1989-04-11
KR900007303B1 (ko) 1990-10-08
DE3686600T2 (de) 1993-04-15
JPS61287155A (ja) 1986-12-17
KR870000752A (ko) 1987-02-20
EP0205190B1 (de) 1992-09-02

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