CN205282463U - 电子器件 - Google Patents
电子器件 Download PDFInfo
- Publication number
- CN205282463U CN205282463U CN201520737924.XU CN201520737924U CN205282463U CN 205282463 U CN205282463 U CN 205282463U CN 201520737924 U CN201520737924 U CN 201520737924U CN 205282463 U CN205282463 U CN 205282463U
- Authority
- CN
- China
- Prior art keywords
- chip
- forward face
- protection wafer
- wafer
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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- 230000004888 barrier function Effects 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
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- 229920000647 polyepoxide Polymers 0.000 description 4
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
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- 239000011344 liquid material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
本实用新型涉及一种电子器件,其中集成电路芯片(3)的背部面被固定在支撑晶片(2)的正面上;保护晶片(12)面向并与所述芯片的前部面间隔一定距离处地定位;固定装置被插入在所述芯片和所述晶片之间,并位于前部面的中心区域之外的芯片的前部面的区域上,该固定装置包括粘合剂以及包括在该粘合剂中的固体间隔元件;屏障阻挡件被布置在芯片的前部面的所述中心区域之外在芯片和保护晶片之间;并且包封环围绕芯片、保护晶片和屏障阻挡件。
Description
技术领域
本实用新型涉及一种电子器件。
背景技术
根据一个已知实施例,电子器件包括堆叠,其包含支撑晶片、安装在该支撑晶片的前部面上并在其前部面中包括传感器的集成电路芯片,以及被安装在该前部面上方的保护晶片。该堆叠通常由包封块围绕。
尤其在传感器是位于与保护晶片相同侧上,可选地由透明材料(例如,玻璃)制成的光学传感器的情况下,存在伴随的获得在芯片的前部面和保护晶片之间的自由和密封的空间的困难。
实用新型内容
本公开的目的尤其在于解决这样的困难,为此,本实用新型提供了一种电子器件。
根据本公开的一个实施例,所述电子器件包括:具有前部面的支撑晶片;具有固定在支撑晶片的前部面上的背部面的集成电路芯片;被定位成面向芯片的前部面并与前部面间隔一定距离的保护晶片;被插入在芯片之间并位于前部面的中心区域之外的芯片的前部面的区域上的固定装置,该固定装置包括粘合剂和包括在该粘合剂中的固体间隔元件;被布置在芯片和保护晶片之间、在芯片的前部面的中心区域之外的屏障阻挡件;以及围绕芯片、保护晶片和屏障阻挡件的包封环。
优选的,所述固定装置具有在彼此间隔一定距离处延伸的端部部分的环形焊道的形式,该环形焊道形成屏障阻挡件。
优选的,所述固定装置彼此间隔一定距离的滴液或区段的形式,并且屏障阻挡件是被布置在芯片和保护晶片之间的外围密闭环的形式。
优选的,芯片包括位于芯片的前部面的区域中的传感器。
优选的,所述传感器是光学传感器并且所述保护晶片是透明的。
本公开的实施例提供了一种电子器件,从而克服了在芯片的前部面和保护晶片之间获得自由和密封的空间的困难。
附图说明
现将通过由附图所图示的非限定性示例的方式来描述电子器件,附图中:
-图1表示包括芯片和保护晶片的电子器件的横截面;
-图2表示沿着图1的II-II的、通过芯片和保护晶片之间的电子器件的平剖面;
-图3至图5表示对应于图1的电子器件的制造步骤的装配的横截面;
-图6表示包括芯片和保护晶片的电子器件的备选实施例的横截面;
-图7表示图6的沿着VII-VII的、通过芯片和保护晶片之间的电子器件的平剖面;以及
-图8至图11表示对应于图6的电子器件的制造步骤的装配的截面。
具体实施方式
如图1和图2所图示的,电子器件1包括,堆叠的支撑和电连接晶片2和集成电路芯片3,通过粘合剂薄层而被安装在支撑晶片2的前部面5上的背部面4。例如正方形的背部面4的表面积小于例如正方形的前部面5的表面积。集成电路芯片3被安装在支撑晶片2的中间,其外围边缘分别是平行的。
在其前部面6的中心区域中,集成电路芯片3包括传感器7,例如,光学传感器。
支撑晶片2被提供有电连接网络8。集成电路芯片3通过多个连接被布置在集成电路芯片3的前部面6的外围区域上的前部焊盘10和被布置在支撑晶片2的前部面5的外围区域上的、在集成电路芯片3的外围边缘和支撑晶片2的外围边缘之间的电连接网络8的前部焊盘11的电连接线9而被连接到该电连接网络8。
此外,电子器件1包括保护晶片12,其通常是透明的且其被堆叠在集成电路芯片3上并通过固定装置13而被固定在与集成电路芯片3的前部面6间隔一定距离处。保护晶片12的外围边缘平行于集成电路芯片3的外围边缘,在包括了电连接焊盘10的集成电路芯片3的外围区域之内延伸。
固定装置13与传感器7和在集成电路芯片3的前部面6的前部焊盘10之间并距与它们间隔一定距离地并且在保护晶片12的背部面14的外围区域上延伸,以使得集成电路芯片3的前部面6具有包括传感器7的中心区域15,面向并与保护晶片12的背部面14的中心区域16间隔一定距离地定位,而同时留出保留在这些区域15和16之间的自由空间。
固定装置13包括形成支柱(strut)的粘合剂的环形焊道17,其以围绕芯片前部面的中心区域的开放环的形式延伸,并具有彼此相邻地且在彼此间隔一定距离处延伸的端部部分17a、17b,而同时留出保留在这些端部部分17a和17b之间的自由空间。
粘合剂的环形焊道17包括固体间隔元件19,例如玻璃或塑料珠。
此外,电子器件1包括由涂覆材料制成的包封环20,其围绕集成电路芯片3和保护晶片12的外围边缘并在支撑晶片2的前部面5的外围区域上延伸,并且在包封环20中嵌入电连接线9。
如以示例方式表示的,包封环20在集成电路芯片3和保护晶片12之间延伸,直到粘合剂的环形焊道17并且可选的直到粘合剂焊道的部分17a和17b之间,但没有到达自由空间7a。因此,与此同时,作为固定装置,不连续的环形焊道17构成针对自由空间7a的屏障阻挡件。
因而,自由空间7a被保护以免受特别是潮湿和固体颗粒的侵入,因此保护了传感器4。
根据所表示的示例,包封环20具有在与保护晶片12的前部面22相同的平面中延伸的前部面21。
支撑晶片2的外围边缘和包封环20的外围边缘可以彼此连续地延伸,垂直于支撑晶片2,以使得电子器件1是直角平行六面体的形式。
支撑晶片2的背部面23可以设有放置在连接网络8的背部焊盘上的电连接元件24。
参考图3至图5,现将描述制造电子器件1的方法。
如图3所图示,通过共同制造的视图,提供了面板2A,其具有正方形矩阵形式的多个相邻位置E,相邻位置中的每个位置设置有有电连接网络8。
集成电路芯片3通过传递被放置到位,并通过粘合剂的薄层被固定在面板2A的位置E的每个位置上,即上述位置中。
然后,如上所述,连接导线9被放置到位。
然后,例如通过点胶针头(dispensingneedle),包括固体间隔元件19的可固化粘合剂的焊道17A分别在已被放置到位的集成电路芯片3的前部面6上,沿着对应于待产生的环形焊道17的线而延伸,如上面所述。该粘合剂是所谓的热粘合剂,也就是说,它能够在热效应下,通过烘烤而被固化。它可以选自适当的环氧树脂。
接下来,如图4所图示,保护晶片12分别在焊道17A上方被放置到位,同时对焊道17A轻微挤压。
由于粘合剂中的固体间隔元件19的存在,确保了在集成电路芯片3和保护晶片12之间的自由空间7a的存在及厚度。
然后,粘合剂焊道17A在烘箱中、在对传感器7并不造成压力的适当的温度下被固化,以使得获得固定的环形焊道17。
由于通道18的存在留出了自由空间7a与外部之间的连通,因此尤其在粘合剂的聚合作用期间形成的气体可以在不升高自由空间7a中的压力的情况下逸出。
根据备选实施例,可以在将保护晶片12放置到位之后,将电连接线9放置到位。
接下来,如图5所图示,在分离集成电路芯片3和保护晶片12的堆叠的廊道(corridors)中,在支撑面板2A的前部面的对应的区域中产生层20A。例如,可以通过展开诸如适当的环氧树脂之类的液态材料,或通过将其注入到模具中(模具的一个面涉及保护晶片12的前部面)来产生层20A。
然后,例如通过在烘箱中烘烤来将材料固化,以使得在位置E中形成如上所述的包封环20。
然后电连接焊道24被放置到位。
最后,通过沿着位置E的分割线25将面板2A和层20A锯切,来在每个位置E处将得到的电子器件1分割或分开。
如图6和图7所图示,由于替换了固定装置这一事实,因此电子器件100区别于参考图1和图2描述的电子器件1,电子器件100包括不同的用于将保护晶片12安装在集成电路芯片3上的固定装置101。
根据该示例性实施例,该固定装置101包括多个粘合剂滴液(drops)102,多个粘合剂滴液102形成支柱并包含固体间隔元件103并彼此分开。例如,可以在集成电路芯片3和保护晶片12的面6和14的相对角区域之间,在包括了传感器7的中心区域之外并与其间隔一定距离处,提供粘合剂滴液的四个点。粘合剂滴液由圆形表示,但它们可以是以区段的形式的细长形。
此外,屏障阻挡件是以连续闭合的中间外围环104的形式,屏障阻挡件阻挡将集成电路芯片3和保护晶片12分开的空间的外围。该中间外围环104在集成电路芯片3的前部面6上并沿着保护晶片12的外围边缘形成。
因此,以与之前示例等同的方式,形成在集成电路芯片3和保护晶片12的面6和14上的,并且由中间外围环104围绕的自由空间105被闭合并被保护。
根据该实施例,以与之前示例等同的方式,电子器件100包括由涂覆材料制成的包封环106,其围绕集成电路芯片3和保护晶片12的外围边缘、围绕中间外围环104,以及在支撑晶片2的前部面5的外围区域上延伸,并且在包封环106中嵌入由电连接线9。
参考图8至图11,现将描述制造电子器件100的方法。
如图8所图示,通过共同制造的视图,以与之前示例等同的方式,提供了面板2A,其具有正方形矩阵形式的多个相邻位置E,相邻位置中的每个位置被提供有电连接网络8。
集成电路芯片3被固定到上述面板2A的位置E的每个位置上的位置处。
然后,如上所述,连接导线9被放置到位。
然后,例如通过点胶针头,包括固体间隔元件103的可固化粘合剂的滴液102A被布置在已被放置到位的集成电路芯片3的前部面6上,在待产生的滴液102的位置处,如上面所指出的。如在之前的示例中,该粘合剂可以能够在热效应下被固化的热粘合剂。例如适当的环氧树脂。
接下来,如图9所图示,保护晶片12分别在滴液102A上方,在位置E处被放置到位,同时对滴液102A轻微挤压。
由于固体间隔元件103的存在,确保了在集成电路芯片3和保护晶片12之间的自由空间105的存在及厚度。
然后,粘合剂滴液102A在烘箱中、在对传感器7并不造成压力的适当的温度下被固化。
由于存在将滴液102A分开的空间,因此尤其在粘合剂的聚合化期间形成的气体可以在不在自由空间105中生成压力的情况下逸出。
接下来,如图10所图示,例如,在点胶针头的辅助下,围绕堆叠,在集成电路芯片3和保护晶片12之间,并且在自由空间105的外围处,也就是说,如上所述,在对应于待产生的闭合中间环的位置处由涂覆材料形成中间外围环104A。该涂覆材料是在没有温度升高和没有气体逸出的情况下能够在紫外线辐照效应下被固化的材料。它可以是适当的环氧树脂。然后,例如在紫外线辐照效应下,环104A被固化以形成中间环。
接下来,如图11所图示并以与参考图5的之前的示例等同的方式,在分离集成电路芯片3和保护晶片12的堆叠的廊道中,在支撑面板2A的前部面的对应的区域中产生层20A。由于闭合中间外围环104的存在,因此构成该层106A的材料被阻止穿入自由空间105。
然后,该材料被固化,以使得在位置E的每个位置中形成包封环106。
然后电连接焊道24被放置到位。
最后,通过沿着位置E的分割线107将面板2A和层106A锯切,在每个位置E处将得到的电子器件100分割或分开。
根据备选的实施例,支撑晶片2可以由包括用于处理来自集成电路芯片3的信号的电子电路的芯片所代替。
本实用新型并不限于上述示例,具体的,在以上述将保护晶片定位在与设置有光学传感器的芯片间隔一定距离为目的的情况下,基于上述描述,可以提供:在键和材料的固化过程中出现的气体去除和对设置有光学传感器的芯片与保护晶片分开的防漏密封,具有不同形状和不同布置的安装装置。在不偏离本实用新型的范围的情况下,其他实施例是可能的。
Claims (5)
1.一种电子器件,其特征在于,包括:
支撑晶片(2),所述支撑晶片具有前部面,
集成电路芯片(3),所述集成电路芯片具有固定在所述支撑晶片的所述前部面上的背部面,
保护晶片(12),所述保护晶片被定位成面向所述芯片的所述前部面并与所述前部面间隔一定距离,
固定装置,所述固定装置被插入在所述芯片之间,并位于所述前部面的中心区域之外的所述芯片的所述前部面的区域上,所述固定装置包括粘合剂和包括在所述粘合剂中的固体间隔元件,
屏障阻挡件,所述屏障阻挡件被布置在所述芯片和所述保护晶片之间、在所述芯片的所述前部面的所述中心区域之外,
以及包封环,所述包封环围绕所述芯片、所述保护晶片和所述屏障阻挡件。
2.根据权利要求1所述的器件,其特征在于,所述固定装置为具有在彼此间隔一定距离处延伸的端部部分的环形焊道的形式,所述环形焊道形成所述屏障阻挡件。
3.根据权利要求1所述的器件,其特征在于,所述固定装置为彼此间隔一定距离的滴液或区段(102)的形式,并且所述屏障阻挡件是被布置在所述芯片和所述保护晶片之间的中间外围环的形式。
4.根据权利要求1-3中任一项所述的器件,其特征在于,所述芯片包括传感器(7),所述传感器位于所述芯片的前部面的所述区域中。
5.根据权利要求4所述的器件,其特征在于,所述传感器是光学传感器并且所述保护晶片是透明的。
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CN105633029B (zh) * | 2014-11-26 | 2019-10-22 | 意法半导体(格勒诺布尔2)公司 | 用于制造电子器件的方法以及包括堆叠的电子器件 |
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US20200258850A1 (en) | 2020-08-13 |
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US10177098B2 (en) | 2019-01-08 |
CN105633029A (zh) | 2016-06-01 |
CN105633029B (zh) | 2019-10-22 |
US20190103368A1 (en) | 2019-04-04 |
US11244910B2 (en) | 2022-02-08 |
US20160148879A1 (en) | 2016-05-26 |
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