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CN112435933B - 一种cob封装结构及其制造方法 - Google Patents

一种cob封装结构及其制造方法 Download PDF

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CN112435933B
CN112435933B CN202011396502.2A CN202011396502A CN112435933B CN 112435933 B CN112435933 B CN 112435933B CN 202011396502 A CN202011396502 A CN 202011396502A CN 112435933 B CN112435933 B CN 112435933B
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孙德瑞
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Abstract

本发明提供了一种COB封装结构及其制造方法。在制造电路板时,采用在介质层之间的布线层上设置气隙,防止上下介质层的应力传递,从而防止电路板的翘曲;且该气隙连接于在芯片之下的穿孔,以实现布线层的散热;本发明的制造方法简单,只需要预先在布线层上设置光刻胶层,并在最后去除即可。

Description

一种COB封装结构及其制造方法
技术领域
本发明涉及半导体封装测试技术领域,具体涉及一种COB封装结构及其制造方法。
背景技术
COB结构是半导体封装领域所常用的结构,其通过将芯片固定于电路板上并进行电连接,实现芯片的电路板上集成。对于COB封装结构而言,由于芯片尤其是功率芯片在其工作时,会产生大量的热辐射,其热传递主要是通过电路板进行传递的,电路板中的热应力会导致电路板翘曲,且增大电路板中的线路层的热效应,从而增大线路层的电阻值。
发明内容
基于解决上述问题,本发明提供了一种COB封装结构的制造方法,其包括以下步骤:
(1)制造一电路板,所述电路板包括多层介质层和介于所述多层介质层之间的多层布线层,所述多层布线层通过多个通孔进行相互电连接并引出至所述多层介质层的最上层介质层之上的焊盘,所述多层布线层上方均具有气隙;
(2)在所述电路板的上表面固定一芯片,所述芯片电连接至所述焊盘上;
(3)形成包封所述芯片的密封层;
(4)在所述电路板的下表面固定一散热器。
进一步的,步骤(1)具体包括:
(11)在临时衬底上形成第一介质层;
(12)在所述第一介质层上形成第一布线层;
(13)在所述第一布线层上形成第一光刻胶层,所述第一光刻胶层至少覆盖所述第一布线层的面积的一半;
(14)在所述第一介质层上覆盖第二介质层,并在所述第二介质层中形成电连接所述第一布线层的第一通孔;
(15)在所述第二介质层上覆盖第二布线层;
(16)在所述第二布线层上形成第二光刻胶层,所述第二光刻胶层至少覆盖所述第二布线层的面积的一半;
(17)在所述第二介质层上覆盖第三介质层,并在所述第三介质层中形成电连接所述第二布线层的第二通孔,且在所述第三介质层的上表面形成所述焊盘,所述焊盘电连接所述第二通孔;
(18)在所述多层介质层中形成一穿孔,所述穿孔的侧面露出所述第一光刻胶层和第二光刻胶层;
(19)利用蚀刻工艺去除所述第一光刻胶层和所述第二光刻胶层,以形成在所述第一布线层上的第一气隙和在所述第二布线层上的第二气隙,所述第一气隙和第二气隙连通所述穿孔,形成所述电路板。
进一步的,步骤(2)具体包括:将芯片固定于所述第三介质层上,且所述芯片盖住所述穿孔,然后再将所述芯片通过焊线接合于所述焊盘上。
进一步的,步骤(3)具体包括:利用注塑工艺在所述电路板上形成密封胶并进行固化,形成包封所述芯片的密封层。
进一步的,步骤(4)还包括将所述散热器上表面的突出部插入所述穿孔中。
本发明还提供了一种COB封装结构,其通过上述的COB封装结构的制造方法形成,包括:
电路板,所述电路板包括多层介质层和介于所述多层介质层之间的多层布线层,所述多层布线层通过多个通孔进行相互电连接并引出至所述多层介质层的最上层介质层之上的焊盘,所述多层布线层上方均具有气隙;
芯片,固定于在所述电路板的上表面,所述芯片电连接至所述焊盘上;
密封层,形成于所述电路板上且包封所述芯片;
散热器,固定于所述电路板的下表面。
进一步的,所述多层介质层包括第一介质层、第二介质层和第三介质层,所述多层布线层包括第一布线层和第二布线层,所述多个通孔包括第一通孔和第二通孔,所述气隙包括第一气隙和第二气隙,其中所述第一布线层和第一气隙介于所述第一介质层和第二介质层之间,所述第二布线层和第二气隙介于所述第二介质层和第三布线层之间。
进一步的,所述电路板中还具有一穿孔,所述第一气隙和第二气隙连通所述穿孔。
进一步的,所述芯片盖住所述穿孔。
进一步的,所述散热器包括在其上表面上的突出部,所述突出部插入所述穿孔。
本发明在制造电路板时,采用在介质层之间的布线层上设置气隙,防止上下介质层的应力传递,从而防止电路板的翘曲;且该气隙连接于在芯片之下的穿孔,以实现布线层的散热;本发明的制造方法简单,只需要预先在布线层上设置光刻胶层,并在最后去除即可。
附图说明
图1为本发明的COB封装结构的剖面图;
图2-7为本发明的COB封装结构的制造方法示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
下面将结合附图对根据本发明公开实施例的COB封装结构进行详细的描述。
请参照图1,本申请的COB封装结构,其包括提供电路板20。该电路板20包括多层介质层,所述多层介质层可以包括第一介质层1、第二介质层2和第三介质层3。其中,多层介质层可以是氧化硅、氮化硅、氧化铝或者氮化铝,其可以通过沉积、共溅射等方法形成。
多层介质层中具有多层电互连的布线层,其中,第一介质层1和第二介质层2之间具有第一布线层4,第二介质层2和第三介质层3之间具有第二布线层5,所述第一布线层4和第二布线层5可以通过PVD、CVD或溅射方法形成,其材料可以选择为铜、银、铝。在本实施例中,第一布线层4环绕第二布线层5需要露出于气隙,在第一布线层4和第二布线层5上还可以设置保护层,例如氮化钛、氮化钽或镍材料层。
此外,虽然图中只画出了三层介质层,但是其还可以包括其他更多层介质层和布线层,其结构可以类似于前述内容的结构,例如包括第四介质层、第五介质层……,以及在第三介质层和第四介质层之间的第三布线层、第四介质层和第五介质层之间的第四布线层……。
多层布线层通过通孔电连接。其中,第一布线层4通过第二介质层2中的第一通孔9电连接至第二布线层5,第二布线层5通过第三介质层3中的第二通孔10引出至第三介质层3上的焊盘11。
电路板20中还具有气隙结构,其包括在第一布线层4与第二介质层2之间的第一气隙7以及在第二布线层5和第三介质层3之间的第二气隙8。为了防止热应力使得电路板20弯曲以及便于布线层散热,第一气隙7至少露出第一布线层4的面积的一半,第二气隙至少露出第二布线层5的面积的一半,优选的,第一气隙7至少露出第一布线层4的面积的3/4,第二气隙至少露出第二布线层5的面积的3/4。第一气隙7和第二气隙8的面积应当足够大,但是应当保证多层介质层之间的键合力。
在电路板20中还具有一穿孔6,所述穿孔6与第一气隙7和第二气隙8连通,以此形成散热路径。该穿孔6应当避开所述第一布线层4和第二布线层5,且该穿孔6的的孔径较大。
在所述电路板20上利用一粘合层13固定一芯片12,该芯片12可以是功率芯片或热机电芯片。该芯片12盖住该穿孔6,且通过焊线14电连接至所述电路板20的焊盘11上。
在电路板20上具有密封层15,密封层15包封所述芯片12。所述密封层15可以通过注塑工艺形成,且密封层15的材料可以是环氧树脂、聚酰亚胺或硅树脂。
在所述电路板20下具有散热器16,散热器16可以上鳍形散热器、热管等。所述散热器16可以具有一突起部,所述突起部插入在所述穿孔6中。
上述COB封装结构采用在介质层之间的布线层上设置气隙,防止上下介质层的应力传递,从而防止电路板的翘曲;且该气隙连接于在芯片之下的穿孔,以实现布线层的散热。其制造方法也是极为简单的,具体可以参见图2-7。
首先,参见图2,在临时衬底上形成第一介质层1,所述临时衬底是具有一定的刚性的。临时衬底包括玻璃衬底、陶瓷衬底、不锈钢衬底或者硅衬底。接着,在所述第一介质层1上形成第一布线层4,所述第一布线层4可以是通过沉积一层金属层然后进行图案化形成,其可以通过溅射、化学气相沉积、物理气相沉积等方法形成。
然后,在第一布线层4的至少大部分覆盖第一光刻胶层30,所述第一光刻胶层30可以通过沉积并图案化形成。该第一光刻胶层30的厚度应当与第一布线层4相当,以保证最好的散热效果。所述第一光刻胶层30至少覆盖所述第一布线层4的面积的一半。
参见图3,在所述第一介质层1上覆盖第二介质层2,并在所述第二介质层2中形成电连接所述第一布线层4的第一通孔9。该第一通孔9可以通过激光钻孔并填充导电材料形成。
参见图4,在所述第二介质层2上形成第二布线层5,所述第二布线层5的形成方法与第一布线层4的形成方法一致,在所述第二布线层5上形成第二光刻胶层40,所述第二光刻胶层40至少覆盖所述第二布线层5的面积的一半。
在所述第二介质层2上覆盖第三介质层3,并在所述第三介质层3中形成电连接所述第二布线层5的第二通孔10,且在所述第三介质层3的上表面形成有焊盘11,所述焊盘11电连接所述第二通孔10。第二通孔10的形成方法与第一通孔9的形成方法一致。
第一介质层1、第二介质层2和第三介质层3形成电路板20。电路板20可以包括更多层,其最上层设置焊盘11。
接着,参见图5,在所述电路板20中钻孔形成穿孔6,所述穿孔6可以通过激光钻孔方法形成,所述穿孔6的侧壁露出所述第一光刻胶层30和第二光刻胶层40。然后通过所述穿孔注入蚀刻液,对所述第一光刻胶层30和第二光刻胶层40进行蚀刻去除,以形成在第一布线层4上的第一气隙7和在第二布线层5上的第二气隙8。
参见图6,将芯片12通过粘合层13固定于所述第三介质层3上,且所述芯片12盖住所述穿孔6,然后再将所述芯片12通过焊线14接合于所述焊盘11上。
利用注塑工艺在所述电路板20上形成密封胶并进行固化,形成包封所述芯片的密封层15。
最后参见图7,移除所述临时衬底,在所述电路板20下表面安装散热器16,所述散热器16包括一突起部,所述突起部插入所述穿孔6。
本发明的制造方法简单,只需要预先在布线层上设置光刻胶层,并在最后去除即可。
本发明中使用的表述“示例性实施例”、“示例”等不是指同一实施例,而是被提供来着重描述不同的特定特征。然而,上述示例和示例性实施例不排除他们与其他示例的特征相组合来实现。例如,即使在另一示例中未提供特定示例的描述的情况下,除非另有陈述或与其他示例中的描述相反,否则该描述可被理解为与另一示例相关的解释。
本发明中使用的术语仅用于示出示例,而无意限制本发明。除非上下文中另外清楚地指明,否则单数表述包括复数表述。
虽然以上示出并描述了示例实施例,但对本领域技术人员将明显的是,在不脱离由权利要求限定的本发明的范围的情况下,可做出变型和改变。

Claims (8)

1.一种COB封装结构的制造方法,其包括以下步骤:(1)制造一电路板,所述电路板包括多层介质层和介于所述多层介质层之间的多层布线层,所述多层布线层通过多个通孔进行相互电连接并引出至所述多层介质层的最上层介质层之上的焊盘,所述多层布线层上方均具有气隙;(2)在所述电路板的上表面固定一芯片,所述芯片电连接至所述焊盘上;(3)形成包封所述芯片的密封层;(4)在所述电路板的下表面固定一散热器;
其中,步骤(1)具体包括:(11)在临时衬底上形成第一介质层;(12)在所述第一介质层上形成第一布线层;(13)在所述第一布线层上形成第一光刻胶层,所述第一光刻胶层至少覆盖所述第一布线层的面积的一半;(14)在所述第一介质层上覆盖第二介质层,并在所述第二介质层中形成电连接所述第一布线层的第一通孔;(15)在所述第二介质层上覆盖第二布线层;(16)在所述第二布线层上形成第二光刻胶层,所述第二光刻胶层至少覆盖所述第二布线层的面积的一半;(17)在所述第二介质层上覆盖第三介质层,并在所述第三介质层中形成电连接所述第二布线层的第二通孔,且在所述第三介质层的上表面形成所述焊盘,所述焊盘电连接所述第二通孔;(18)在所述多层介质层中形成一穿孔,所述穿孔的侧面露出所述第一光刻胶层和第二光刻胶层;(19)利用蚀刻工艺去除所述第一光刻胶层和所述第二光刻胶层,以形成在所述第一布线层上的第一气隙和在所述第二布线层上的第二气隙,所述第一气隙和第二气隙连通所述穿孔,形成所述电路板。
2.根据权利要求1所述的COB封装结构的制造方法,其特征在于,步骤(2)具体包括:将芯片固定于所述第三介质层上,且所述芯片盖住所述穿孔,然后再将所述芯片通过焊线接合于所述焊盘上。
3.根据权利要求2所述的COB封装结构的制造方法,其特征在于,步骤(3)具体包括:利用注塑工艺在所述电路板上形成密封胶并进行固化,形成包封所述芯片的密封层。
4.根据权利要求3所述的COB封装结构的制造方法,其特征在于,步骤(4)还包括将所述散热器上表面的突出部插入所述穿孔中。
5.一种COB封装结构,其通过权利要求1所述的COB封装结构的制造方法形成,包括:电路板,所述电路板包括多层介质层和介于所述多层介质层之间的多层布线层,所述多层布线层通过多个通孔进行相互电连接并引出至所述多层介质层的最上层介质层之上的焊盘,所述多层布线层上方均具有气隙;芯片,固定于在所述电路板的上表面,所述芯片电连接至所述焊盘上;密封层,形成于所述电路板上且包封所述芯片;散热器,固定于所述电路板的下表面;
其中,所述多层介质层包括第一介质层、第二介质层和第三介质层,所述多层布线层包括第一布线层和第二布线层,所述多个通孔包括第一通孔和第二通孔,所述气隙包括第一气隙和第二气隙,其中所述第一布线层和第一气隙介于所述第一介质层和第二介质层之间,所述第二布线层和第二气隙介于所述第二介质层和第三布线层之间。
6.根据权利要求5所述的COB封装结构,其特征在于,所述电路板中还具有一穿孔,所述第一气隙和第二气隙连通所述穿孔。
7.根据权利要求6所述的COB封装结构,其特征在于,所述芯片盖住所述穿孔。
8.根据权利要求7所述的COB封装结构,其特征在于,所述散热器包括在其上表面上的突出部,所述突出部插入所述穿孔。
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