CN103469236A - Copper base material cleaning agent and preparation method thereof - Google Patents
Copper base material cleaning agent and preparation method thereof Download PDFInfo
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Abstract
The invention provides a copper base material cleaning agent. The copper base material cleaning agent is composed of, by weight, 0.05%-2% of organic acid activators, 0.05%-1% of a nonionic surface activator, 0.01%-0.6% of an anion surface activator, 0.005%-0.2% of an antioxidant, 0.005%-0.2% of a chelating agent, and the balance deionized water. In addition, the invention discloses a preparation method of the copper base material cleaning agent. The copper base material cleaning agent is free of attenuation and controlling over the attenuation, can be directly used, does not contain heavy metal, is free of residues and can meet the processing requirements for copper before hot dipping; the surface of a copper base material processed by the cleaning agent is pure and is free of dark spots, oil contaminations, fingerprints and the like; accessories obtained after tinplating are free of exposed copper, dark spots and other defects, and the surfaces of the accessories are smooth.
Description
Technical field
The invention belongs to the chemical cleaning technique field, be specifically related to a kind of copper base material clean-out system and preparation method thereof.
Background technology
According to the pre-treating process difference of plating metal on surface, pretreatment of base material technique can be divided into solvent method and shielding gas reduction method.Solvent method is that the chemical action of utilizing solvent does not reoxidize oneself its surface of protection before the copper material of oil removing, rust cleaning is immersing plating solution and, to its further activation, guarantees that plating solution and clean copper matrix surface infiltrate, and by chemical reaction with diffuse to form alloy layer.This method equipment is simple, cost is low, easy and simple to handle easy to learn, produce flexibly, can be produced in batches, can be according to product regulation and control at any time in batches.Therefore, in China, have promotional value, be necessary to be furtherd investigate.Copper base material clean-out system refers to can clean the surface of copper base material in the production technique of copper plating piece.May cause producing waste product if copper material is surperficial unholiness before copper plating, not only cause raw-material waste, and increased the production pressure of factory.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned the deficiencies in the prior art, and a kind of copper base material clean-out system is provided.This clean-out system is effectively removed the preparation of metal oxide film by adding organic acid, sequestrant etc., add anion surfactant and nonionogenic tenside simultaneously, except this characteristic of wipe oil preferably, also for metal oxide, provide after by organic acid, sequestrant solvent reaction and broken away from surperficial power.It is more far better than adding single tensio-active agent effect to experimental results show that the composite table promoting agent of interpolation.Organic acid is not only reacted with metal oxide with sour form in addition, formed complex compound in reaction, can be reduced into the organic acid form again under the condition of hydrogen, this a series of reaction can be so that clean-out system of the present invention shows well under uncovered condition, and more friendly to operator to environment than the clean-out system of inorganic acid preparation, effect is more lasting, is the optimal representation form of pickling.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of copper base material clean-out system, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.05%～2%, nonionogenic tenside 0.05%～1%, anion surfactant 0.01%～0.6%, antioxidant 0.005%～0.2%, sequestrant 0.005%～0.2%, surplus is deionized water; Described nonionogenic tenside is one or more in Determination of Polyoxyethylene Non-ionic Surfactants, polyol-based non-ionic surfactant and alcohol amide type nonionogenic tenside.
Above-mentioned a kind of copper base material clean-out system, raw material by following mass percent is made: organic acid for activating agent 0.5%～1.5%, nonionogenic tenside 0.08%～0.1%, anion surfactant 0.05%～0.5%, antioxidant 0.01%～0.15%, sequestrant 0.01%～0.15%, surplus is deionized water.
Above-mentioned a kind of copper base material clean-out system, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water.
Above-mentioned a kind of copper base material clean-out system, described organic acid for activating agent is one or more in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid.
Above-mentioned a kind of copper base material clean-out system, described Determination of Polyoxyethylene Non-ionic Surfactants is one or more in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene and polyoxyethylene carboxylate; Described polyol-based non-ionic surfactant is one or more in pentaerythritol fatty ester, sucrose fatty ester and sorbitan fatty acid ester; Described alcohol amide type nonionogenic tenside is cocoanut fatty acid diethanolamide.
Above-mentioned a kind of copper base material clean-out system, described anion surfactant is Sodium dodecylbenzene sulfonate and/or sodium lauryl sulphate.
Above-mentioned a kind of copper base material clean-out system, described antioxidant is benzotriazole and/or tolyltriazole.
Above-mentioned a kind of copper base material clean-out system, described sequestrant is EDETATE DISODIUM and/or EDTA.
In addition, the present invention also provides a kind of method for preparing above-mentioned copper base material clean-out system, it is characterized in that, the method comprises the following steps:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
The present invention compared with prior art has the following advantages:
1, in clean-out system of the present invention, add the organic acid for activating agent of low weight percentage can reduce copper based cleaning agent degassing in heat treatment process, foaming and cementation index.
2, add fatty acid group or aromatic nonionogenic tenside in clean-out system of the present invention, can increase the contact area of clean-out system and copper base material, strengthen surface profit wetting power, strengthen the seepage force of organic acid for activating agent.
3, in clean-out system of the present invention, add oxidation inhibitor can prevent alloy oxidation again.
4, the present invention adopts low toxicity, without the organic acid for activating agent of strong and stimulating smell, metal is not had to severe corrosive, to operator and environment unusual friendliness all.
5, clean-out system of the present invention is effectively removed the preparation of metal oxide film by adding organic acid, sequestrant etc., add anion surfactant and nonionogenic tenside simultaneously, except this characteristic of wipe oil preferably, also for metal oxide, provide after by organic acid, sequestrant solvent reaction and broken away from surperficial power.It is more far better than adding single tensio-active agent effect to experimental results show that the composite table promoting agent of interpolation.Organic acid is not only reacted with metal oxide with sour form in addition, formed complex compound in reaction, can be reduced into the organic acid form again under the condition of hydrogen, this a series of reaction can be so that clean-out system of the present invention shows well under uncovered condition, and more friendly to operator to environment than the clean-out system of inorganic acid preparation, effect is more lasting, is the optimal representation form of pickling.
6, clean-out system of the present invention without dilution with control dilution, can directly be used, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.Process the copper substrate surface cleaning of (soak or rinse) through clean-out system of the present invention, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Below by embodiment, technical scheme of the present invention is described in further detail.
Embodiment
Embodiment 1
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 0.05%, nonionogenic tenside 1%, anion surfactant 0.6%, antioxidant 0.005%, sequestrant 0.005%, surplus is deionized water; Described organic acid for activating agent is citric acid; Described nonionogenic tenside is alkylphenol polyoxyethylene; Described anion surfactant is Sodium dodecylbenzene sulfonate; Described antioxidant is tolyltriazole; Described sequestrant is EDETATE DISODIUM.
The preparation method of the copper base material clean-out system of the present embodiment is:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 2
The copper base material clean-out system of the present embodiment is identical with embodiment 1, wherein difference is: described organic acid for activating agent is pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid or succsinic acid, or is at least two kinds in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester or cocoanut fatty acid diethanolamide, or is at least two kinds in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is sodium lauryl sulphate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is benzotriazole or benzotriazole and tolyltriazole; Described sequestrant is EDTA or EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 3
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 2%, nonionogenic tenside 0.05%, anion surfactant 0.01%, antioxidant 0.2%, sequestrant 0.2%, surplus is deionized water; Described organic acid for activating agent is succsinic acid; Described nonionogenic tenside is cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is benzotriazole; Described sequestrant is EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 4
The copper base material clean-out system of the present embodiment is identical with embodiment 3, wherein difference is: described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid or oxysuccinic acid, or is at least two kinds in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester or sorbitan fatty acid ester, or is at least two kinds in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate or sodium lauryl sulphate; Described antioxidant is tolyltriazole or benzotriazole and tolyltriazole; Described sequestrant is EDTA or EDETATE DISODIUM.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 5
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 0.5%, nonionogenic tenside 0.08%, anion surfactant 0.5%, antioxidant 0.01%, sequestrant 0.01%, surplus is deionized water; Described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is sodium lauryl sulphate; Described antioxidant is benzotriazole and tolyltriazole; Described sequestrant is EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 6
The copper base material clean-out system of the present embodiment is identical with embodiment 5, and wherein difference is: described organic acid for activating agent is eight kinds at the most in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is six kinds at the most in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is tolyltriazole or benzotriazole; Described sequestrant is EDETATE DISODIUM or EDTA and EDETATE DISODIUM.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 7
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.05%, antioxidant 0.15%, sequestrant 0.15%, surplus is deionized water; Described organic acid for activating agent is citric acid and salicylic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether and sorbitan fatty acid ester; Described anion surfactant is sodium lauryl sulphate; Described antioxidant is benzotriazole and tolyltriazole; Described sequestrant is EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 8
The copper base material clean-out system of the present embodiment is identical with embodiment 7, wherein difference is: described organic acid for activating agent is a kind of in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid or more than three kinds, be perhaps two kinds in pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid, or be the mixture of a kind of and citric acid in pentanedioic acid, methylene-succinic acid, acetic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid, described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, a kind of in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide or more than three kinds, it is perhaps alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide two kinds, it is perhaps alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, the mixture of a kind of and fatty alcohol-polyoxyethylene ether in sucrose fatty ester and cocoanut fatty acid diethanolamide, described anion surfactant is Sodium dodecylbenzene sulfonate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate, described antioxidant is tolyltriazole or benzotriazole, described sequestrant is EDETATE DISODIUM or EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 9
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water; Described organic acid for activating agent is pentanedioic acid, methylene-succinic acid, acetic acid and oxysuccinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, sucrose fatty ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate; Described antioxidant is benzotriazole; Described sequestrant is EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 10
The copper base material clean-out system of the present embodiment is identical with embodiment 9, wherein difference is: described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, a kind of in oxysuccinic acid and succsinic acid, two kinds, more than three kinds or five kinds, it is perhaps citric acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid four kinds, it is perhaps citric acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid the three kinds mixtures with pentanedioic acid, it is perhaps citric acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid the two kinds mixtures with pentanedioic acid and methylene-succinic acid, it is perhaps citric acid, salicylic acid, sebacic acid, a kind of and pentanedioic acid in oxalic acid and succsinic acid, the mixture of methylene-succinic acid and acetic acid, described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, a kind of in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide, two kinds, more than three kinds or five kinds, or it is alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide four kinds, or be polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide the three kinds mixtures with fatty alcohol-polyoxyethylene ether, or be polyoxyethylene carboxylate, pentaerythritol fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide the two kinds mixtures with fatty alcohol-polyoxyethylene ether and alkylphenol polyoxyethylene, or be polyoxyethylene carboxylate, a kind of and fatty alcohol-polyoxyethylene ether in pentaerythritol fatty ester and sorbitan fatty acid ester, the mixture of alkylphenol polyoxyethylene and sucrose fatty ester, described anion surfactant is sodium lauryl sulphate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate, described antioxidant is tolyltriazole or tolyltriazole and benzotriazole, described sequestrant is EDETATE DISODIUM or EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
The above, be only preferred embodiment of the present invention, not the present invention imposed any restrictions.Every any simple modification of above embodiment being done according to the invention technical spirit, change and equivalence change, and all still belong in the protection domain of technical solution of the present invention.
Claims (9)
1. a copper base material clean-out system, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.05%～2%, nonionogenic tenside 0.05%～1%, anion surfactant 0.01%～0.6%, antioxidant 0.005%～0.2%, sequestrant 0.005%～0.2%, surplus is deionized water; Described nonionogenic tenside is one or more in Determination of Polyoxyethylene Non-ionic Surfactants, polyol-based non-ionic surfactant and alcohol amide type nonionogenic tenside.
2. a kind of copper base material clean-out system according to claim 1, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.5%～1.5%, nonionogenic tenside 0.08%～0.1%, anion surfactant 0.05%～0.5%, antioxidant 0.01%～0.15%, sequestrant 0.01%～0.15%, surplus is deionized water.
3. a kind of copper base material clean-out system according to claim 2, is characterized in that, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water.
4. according to claim 1,2 or 3 described a kind of copper base material clean-out systems, it is characterized in that, described organic acid for activating agent is one or more in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid.
5. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described Determination of Polyoxyethylene Non-ionic Surfactants is one or more in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene and polyoxyethylene carboxylate; Described polyol-based non-ionic surfactant is one or more in pentaerythritol fatty ester, sucrose fatty ester and sorbitan fatty acid ester; Described alcohol amide type nonionogenic tenside is cocoanut fatty acid diethanolamide.
6. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described anion surfactant is Sodium dodecylbenzene sulfonate and/or sodium lauryl sulphate.
7. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described antioxidant is benzotriazole and/or tolyltriazole.
8. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described sequestrant is EDETATE DISODIUM and/or EDTA.
9. the method prepared as copper base material clean-out system as described in claim 1,2 or 3, is characterized in that, the method comprises the following steps:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
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| CN110760861A (en) * | 2019-11-25 | 2020-02-07 | 江南大学 | Copper cleaning agent and preparation method thereof |
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| CN112160002B (en) * | 2020-09-15 | 2021-05-28 | 深圳市崇辉表面技术开发有限公司 | Method for carrying out surface activation treatment on copper alloy surface |
| CN114427097A (en) * | 2022-02-25 | 2022-05-03 | 沈阳永清环保科技有限公司 | Citric acid copper alloy pickling solution and preparation method thereof |
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