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CN103367469B - Solar cell - Google Patents

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Publication number
CN103367469B
CN103367469B CN201210103687.2A CN201210103687A CN103367469B CN 103367469 B CN103367469 B CN 103367469B CN 201210103687 A CN201210103687 A CN 201210103687A CN 103367469 B CN103367469 B CN 103367469B
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solar cell
substrate
electrode
area
opening
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CN103367469A (en
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李昆儒
林佳玫
任志榆
方婷
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Motech Industries Inc
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Motech Industries Inc
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

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Abstract

A solar cell, comprising: the dielectric layer is arranged on the substrate, and the dielectric layer is arranged on the substrate. The electrode includes a first structure having a conductive segment and a second structure disposed in the through hole. The opening is located on the dielectric layer and surrounded by the electrode, wherein the conductive segment is configured in the opening. The first area is a total area of the opening orthographically projected to the substrate. The second area is a total area of the electrode orthographic projection to the substrate and is greater than the first area. The electrode can limit the diffusion of the substrate material, so that enough substrate material is mixed with the electrode material to form a back electric field structure with thick thickness and good quality, thereby improving the conversion efficiency of the battery.

Description

太阳能电池Solar battery

技术领域technical field

本发明涉及一种太阳能电池,特别是涉及一种具有局部背电场结构的硅晶太阳能电池。The invention relates to a solar cell, in particular to a silicon crystal solar cell with a local back electric field structure.

背景技术Background technique

参阅图1,为一种已知太阳能电池,主要包括:一基板11、一与该基板11形成p-n结的射极层12、一介电层13、多个形成于该基板11的局部部位的背电场结构(localbacksurfacefield,简称LBSF)14以及一背电极15。Referring to Fig. 1, it is a known solar cell, which mainly includes: a substrate 11, an emitter layer 12 forming a p-n junction with the substrate 11, a dielectric layer 13, and a plurality of solar cells formed on local parts of the substrate 11. A back surface field (local back surface field, LBSF for short) 14 and a back electrode 15 .

该介电层13形成于该基板11的一个背面111处,并具有多个前后左右间隔且为圆形的穿孔131。所述背电场结构14对应所述穿孔131而形成于该背面111处,背电场结构14的载子浓度大于该p型基板,可帮助提升载子收集效率及光电转换效率。而该背电极15的制作,主要是通过网印方式将铝浆以接近整面的方式涂布在该介电层13的表面,而且一部分的铝浆流入该介电层13的穿孔131中,后续通过高温烧结(firing)即可形成该固化的背电极15,因此该背电极15具有一个位于该介电层13表面并且为连续层状的表层部151,以及多个伸入穿孔131中并与该基板11接触连接的接触部152。此外,在烧结过程中,填入穿孔131中的铝浆会与该基板11的硅混合形成铝硅(Al-Si)混合材料,进而形成所述背电场结构14。The dielectric layer 13 is formed on a back surface 111 of the substrate 11 and has a plurality of circular through holes 131 spaced from front to back, left to right. The back electric field structure 14 is formed on the back surface 111 corresponding to the through hole 131 , and the carrier concentration of the back electric field structure 14 is higher than that of the p-type substrate, which can help improve carrier collection efficiency and photoelectric conversion efficiency. The production of the back electrode 15 is mainly to coat the aluminum paste on the surface of the dielectric layer 13 in a manner close to the entire surface by screen printing, and a part of the aluminum paste flows into the through hole 131 of the dielectric layer 13, The cured back electrode 15 can be formed by subsequent high-temperature sintering (firing), so the back electrode 15 has a surface layer portion 151 located on the surface of the dielectric layer 13 and is a continuous layer, and a plurality of through holes 131 and The contact portion 152 is in contact with the substrate 11 . In addition, during the sintering process, the aluminum paste filled in the through hole 131 will mix with the silicon of the substrate 11 to form an aluminum-silicon (Al-Si) mixed material, thereby forming the back electric field structure 14 .

但在实务上发现,一般烧结温度约为700℃至800℃左右,在此高温下,硅在铝中的扩散性良好,再加上该铝制的背电极15为整面大面积设置,对于硅没有任何局限作用,因此硅很容易自该背电极15的接触部152往该表层部151的方向扩散出去,如此将不利于背电场结构14的形成,因为背电场结构14是通过铝、硅材料在该背面111处且对应于穿孔131的位置混合而形成,但是硅不断向外扩散时,使得能用于形成背电场结构14的硅含量减少,导致混合成的铝硅合金减少。However, it has been found in practice that the general sintering temperature is about 700°C to 800°C. At this high temperature, the diffusion of silicon in aluminum is good. In addition, the back electrode 15 made of aluminum is provided on the entire surface with a large area. Silicon does not have any limiting effect, so silicon is easy to diffuse from the contact portion 152 of the back electrode 15 to the direction of the surface portion 151, which will be unfavorable for the formation of the back electric field structure 14, because the back electric field structure 14 is formed by aluminum, silicon The materials are mixed and formed at the back surface 111 and the position corresponding to the through hole 131 . However, when the silicon continues to diffuse outwards, the silicon content that can be used to form the back electric field structure 14 is reduced, resulting in a reduction of the mixed aluminum-silicon alloy.

参阅图2,如此将在该背面处与该背电极15之间形成一空腔(cavity)10,空腔10形成的范围中不含有任何铝硅合金,若空腔率过高将影响电极的导电效能,另外也会导致烧结形成的背电场结构14的厚度薄、品质较差,进而影响其效能。Referring to Fig. 2, a cavity (cavity) 10 will be formed between the back surface and the back electrode 15. The range formed by the cavity 10 does not contain any aluminum-silicon alloy. If the cavity ratio is too high, it will affect the conductivity of the electrode. In addition, the thickness and poor quality of the back electric field structure 14 formed by sintering will also result in poor performance, thereby affecting its performance.

除了上述穿孔为圆形的电池以外,目前还有一种电池的介电层的穿孔为长向延伸的线状形态,参阅图3、图4,此种电池的背电极15包括两条长条状的主栅线(busbar)153以及三个受到主栅线153隔开的导电区154,每一导电区154具有一个位于介电层13表面的层状的表层部155以及多个自该表层部155伸入穿孔131中的接触部156。由于该背电极15也是大面积连续设置,无法局限硅的扩散移动,因此同样会因为空腔率高而影响背电极15的导电效能与背电场结构14的品质。In addition to the aforementioned batteries with circular perforations, there is currently another type of battery in which the dielectric layer is perforated in a linear shape extending in the long direction. Refer to Figures 3 and 4. The busbar (busbar) 153 and three conductive regions 154 separated by the busbar 153, each conductive region 154 has a layered surface portion 155 on the surface of the dielectric layer 13 and a plurality of layers from the surface portion 155 protrudes into a contact portion 156 in the through hole 131 . Since the back electrode 15 is also arranged continuously in a large area, the diffusion and movement of silicon cannot be restricted. Therefore, the high cavity ratio also affects the conductive performance of the back electrode 15 and the quality of the back electric field structure 14 .

针对图3、图4的线状穿孔电池的缺失,目前已有改良设计,如图5、图6所示,该背电极15不再呈大面积连续设置,而是具有多个间隔的导电段157,每一导电段157具有一个表层部158以及一个位于穿孔131中的接触部159。由于导电段157彼此之间未直接连接,使得由接触部159朝表层部158扩散的硅无法再往四面八方继续扩散,另一方面也因为导电段157的大小有限,因此每一导电段157中的硅浓度会较快达到饱和,使硅不再扩散移动,如此就有较多的硅材料留在该背面111处,并与铝形成铝硅合金,进而降低空腔率、提升背电场结构14的品质。Aiming at the absence of the linear perforated battery shown in Figure 3 and Figure 4, there is currently an improved design, as shown in Figure 5 and Figure 6, the back electrode 15 is no longer arranged continuously in a large area, but has multiple conductive segments at intervals 157 , each conductive segment 157 has a surface portion 158 and a contact portion 159 located in the through hole 131 . Since the conductive segments 157 are not directly connected to each other, the silicon diffused from the contact portion 159 to the surface portion 158 cannot continue to diffuse in all directions. On the other hand, because the size of the conductive segments 157 is limited, the The concentration of silicon will reach saturation quickly, so that silicon will no longer diffuse and move, so that more silicon material will remain at the back surface 111, and form an aluminum-silicon alloy with aluminum, thereby reducing the cavity ratio and improving the back electric field structure 14. quality.

虽然图5、图6的改良结构有助于降低线状穿孔型态电池的空腔率,但若是一味地减少背电极15所占的面积来局限硅的扩散,却会因此使背电极15的面积过小,反而导致电极导电性不佳,电池的串联电阻过高,而且在图5、图6中,相邻两导电段157之间的电流无法直接传输,而仅能分别通过导电段157传导到主栅线153,因此其电流传输受到限制,导电性差。Although the improved structure shown in Fig. 5 and Fig. 6 is helpful to reduce the cavity ratio of the linear through-hole battery, if the area occupied by the back electrode 15 is blindly reduced to limit the diffusion of silicon, the back electrode 15 will thus be reduced. If the area is too small, the conductivity of the electrode will be poor, and the series resistance of the battery will be too high. Moreover, in Figures 5 and 6, the current between two adjacent conductive segments 157 cannot be directly transmitted, but can only pass through the conductive segments 157 respectively. Conducted to the main grid line 153, so its current transmission is limited and its conductivity is poor.

综上所述,图1所示的点状穿孔电池与图5、图6所示的线状穿孔电池,其共同必须解决的问题为如何降低空腔率,另外,在改善线状穿孔结构的空腔率问题的同时,如何在空腔率及维持导电效能之间取得平衡,则为另一待解决的问题。To sum up, the point-shaped perforated battery shown in Figure 1 and the linear perforated battery shown in Figures 5 and 6 must solve the common problem of how to reduce the cavity ratio. How to strike a balance between the cavity rate and maintain the conductive performance is another problem to be solved.

发明内容Contents of the invention

本发明的目的在于提供一种具有品质良好的背电场结构、电极导电性佳、转换效率佳的太阳能电池。The object of the present invention is to provide a solar cell with a good back electric field structure, good electrode conductivity and good conversion efficiency.

本发明所述的太阳能电池,包括:一个基板、一个设于该基板上的介电层、至少一个配置于该介电层的穿孔以及一个设于该介电层上的电极,该电极包括至少一个位于该穿孔外的第一结构以及至少一个设于该穿孔并连接该基板的第二结构,该第一结构包括一个本体段以及至少一个连接该本体段与该第二结构的导电段;该太阳能电池还包括至少一个位于该介电层上并由该电极围绕形成的开口,该导电段配置于该开口中。该太阳能电池还包括一个第一面积与一个第二面积,该第一面积为该开口正投影到该基板的总面积,该第二面积为该电极正投影到该基板的总面积,该第二面积大于该第一面积。The solar cell of the present invention comprises: a substrate, a dielectric layer disposed on the substrate, at least one through hole disposed on the dielectric layer, and an electrode disposed on the dielectric layer, the electrode comprising at least A first structure located outside the through hole and at least one second structure disposed in the through hole and connected to the substrate, the first structure includes a body segment and at least one conductive segment connecting the body segment and the second structure; The solar cell also includes at least one opening located on the dielectric layer and surrounded by the electrode, and the conductive segment is disposed in the opening. The solar cell also includes a first area and a second area, the first area is the total area of the opening projected onto the substrate, the second area is the total area of the electrode projected onto the substrate, and the second The area is larger than the first area.

本发明所述的太阳能电池,该第二结构与该导电段的材质彼此不同。In the solar cell of the present invention, the materials of the second structure and the conductive segment are different from each other.

本发明所述的太阳能电池,该第一结构的本体段与该第二结构的材质彼此相同。In the solar cell of the present invention, the material of the body segment of the first structure and the second structure are the same.

本发明所述的太阳能电池,该第一结构的本体段与该导电段的材质彼此相同。In the solar cell of the present invention, the material of the body section of the first structure and the conductive section are the same.

本发明所述的太阳能电池,该导电段填设于该开口的全部空间或局部空间。In the solar cell of the present invention, the conductive segment is filled in the entire space or a partial space of the opening.

本发明所述的太阳能电池,该导电段的材质包括选自银、氧化锌与镍组成群组的任一者。In the solar cell of the present invention, the material of the conductive section includes any one selected from the group consisting of silver, zinc oxide and nickel.

本发明所述的太阳能电池,该导电段填设于该开口的局部空间,该导电段与该第二结构的材质彼此相同。According to the solar cell of the present invention, the conductive section is filled in the partial space of the opening, and the material of the conductive section and the second structure are the same.

本发明所述的太阳能电池,该穿孔包括选自点状穿孔或线状穿孔组成群组的任一者。In the solar cell of the present invention, the perforation includes any one selected from the group consisting of point perforation and linear perforation.

本发明所述的太阳能电池,该点状穿孔设有该第二结构,该开口位于该第二结构的外周。According to the solar cell of the present invention, the second structure is provided in the dotted hole, and the opening is located on the outer periphery of the second structure.

本发明所述的太阳能电池,该线状穿孔设有该第二结构,该开口位于该第二结构的外周。In the solar cell of the present invention, the second structure is provided in the linear perforation, and the opening is located on the outer periphery of the second structure.

本发明的有益效果在于:通过该导电段连接该第一结构的本体段与该第二结构,可以于高温烧结过程中限制该基板材料的扩散,使足够多的基板材料与该电极材料混合,进而形成厚度厚、品质佳的背电场结构,而且该电极具有足够面积且导电性佳。上述结构改良能提升电池的转换效率。The beneficial effect of the present invention is that: connecting the body segment of the first structure and the second structure through the conductive segment can limit the diffusion of the substrate material during the high-temperature sintering process, so that enough substrate material can be mixed with the electrode material, Furthermore, a thick and high-quality back electric field structure is formed, and the electrode has sufficient area and good conductivity. The above structural improvements can improve the conversion efficiency of the battery.

附图说明Description of drawings

图1是一种已知太阳能电池的剖视图;Fig. 1 is a sectional view of a known solar cell;

图2是以扫描式电子显微镜(SEM)拍下的照片,主要显示该太阳能电池中的一空腔;Figure 2 is a photo taken with a scanning electron microscope (SEM), mainly showing a cavity in the solar cell;

图3是另一种已知太阳能电池的仰视图;Fig. 3 is the bottom view of another kind of known solar cell;

图4是沿图3中4-4线所取的剖视图;Fig. 4 is a sectional view taken along line 4-4 in Fig. 3;

图5是再另一种已知太阳能电池的仰视图;Figure 5 is a bottom view of yet another known solar cell;

图6是沿图5中6-6线所取的剖视图;Fig. 6 is a sectional view taken along line 6-6 in Fig. 5;

图7是本发明太阳能电池的一第一较佳实施例的仰视图;Fig. 7 is a bottom view of a first preferred embodiment of the solar cell of the present invention;

图8是一取自图7的假想线所圈围出的部位的放大图;Fig. 8 is an enlarged view of the part enclosed by the imaginary line taken from Fig. 7;

图9是沿图8中9-9线所取的剖视图;Fig. 9 is a sectional view taken along line 9-9 in Fig. 8;

图10是以SEM拍下的照片,显示该第一较佳实施例的局部部位;Fig. 10 is a photo taken by SEM, showing the local parts of the first preferred embodiment;

图11是本发明太阳能电池的一第二较佳实施例的局部仰视图;Fig. 11 is a partial bottom view of a second preferred embodiment of the solar cell of the present invention;

图12是本发明太阳能电池的一第三较佳实施例的局部仰视图;Fig. 12 is a partial bottom view of a third preferred embodiment of the solar cell of the present invention;

图13是本发明太阳能电池的一第四较佳实施例的局部仰视图;Fig. 13 is a partial bottom view of a fourth preferred embodiment of the solar cell of the present invention;

图14是本发明太阳能电池的一第五较佳实施例的局部仰视图;Fig. 14 is a partial bottom view of a fifth preferred embodiment of the solar cell of the present invention;

图15是本发明太阳能电池的一第六较佳实施例的局部仰视图;Fig. 15 is a partial bottom view of a sixth preferred embodiment of the solar cell of the present invention;

图16是本发明太阳能电池的一第七较佳实施例的局部仰视图;Fig. 16 is a partial bottom view of a seventh preferred embodiment of the solar cell of the present invention;

图17是沿图16中17-17线所取的剖视图;Fig. 17 is a sectional view taken along line 17-17 in Fig. 16;

图18是本发明太阳能电池的一第八较佳实施例的局部仰视图;Fig. 18 is a partial bottom view of an eighth preferred embodiment of the solar cell of the present invention;

图19是本发明太阳能电池的一第九较佳实施例的局部仰视图;Fig. 19 is a partial bottom view of a ninth preferred embodiment of the solar cell of the present invention;

图20是沿图19中20-20线所取的剖视图。Fig. 20 is a cross-sectional view taken along line 20-20 in Fig. 19 .

具体实施方式detailed description

下面结合附图及实施例对本发明进行详细说明,要注意的是,在以下的说明内容中,类似的元件是以相同的编号来表示。The present invention will be described in detail below with reference to the accompanying drawings and embodiments. It should be noted that in the following description, similar elements are denoted by the same numerals.

参阅图7、图8、图9,本发明太阳能电池的第一较佳实施例包括:一基板2、一介电层3、至少一穿孔31、多个背电场结构4、一电极5以及至少一个位于该介电层3上并由该电极5所围绕形成的开口6。Referring to Fig. 7, Fig. 8, Fig. 9, the first preferred embodiment of the solar cell of the present invention comprises: a substrate 2, a dielectric layer 3, at least one through hole 31, a plurality of back electric field structures 4, an electrode 5 and at least An opening 6 is formed on the dielectric layer 3 and surrounded by the electrode 5 .

该基板2包括彼此相对的一第一面21与一第二面22,该第一面21为背面,该第二面22为入光面,并且可制作成粗糙面以提高入光量。该基板2上还设有一个位于该第二面22处并能与该基板2形成p-n结的射极层23,在本实施例中,该基板2为p型硅基板,该射极层23为n型半导体,但实施时两者的导电型式可以互换,只要能形成p-n结即可。The substrate 2 includes a first surface 21 and a second surface 22 opposite to each other. The first surface 21 is a back surface, and the second surface 22 is a light-incident surface, which can be roughened to increase the amount of light incident. The substrate 2 is also provided with an emitter layer 23 located at the second surface 22 and capable of forming a p-n junction with the substrate 2. In this embodiment, the substrate 2 is a p-type silicon substrate, and the emitter layer 23 It is an n-type semiconductor, but the conductivity types of the two can be interchanged during implementation, as long as a p-n junction can be formed.

此外,在该射极层23上还可设置一个图未示出的抗反射层,其材料例如氮化硅(SiNx)等,用于降低太阳光的反射、提升光线入射率并可降低表面载子的复合速率(surfacerecombinationvelocity,简称SRV),但本发明不以该抗反射层为必要。在该电池上还设有一个图未示出的正面电极,用于与该电极5配合将电池的电能传输到外部,但由于该正面电极非本发明的改良重点,所以不再说明。In addition, an anti-reflection layer not shown in the figure can also be arranged on the emitter layer 23, and its material, such as silicon nitride (SiN x ), is used to reduce the reflection of sunlight, increase the incidence rate of light, and reduce the surface area. Carrier recombination velocity (recombination velocity, SRV for short), but the present invention does not require the anti-reflection layer. There is also an unshown front electrode on the battery, which is used to cooperate with the electrode 5 to transmit the electric energy of the battery to the outside, but since the front electrode is not the focus of improvement of the present invention, it will not be described again.

该介电层3一般又称为钝化层(passivationlayer),并设于该基板2的第一面21上,用于填补、降低表面缺陷,进而降低载子在该基板2的第一面21处的复合速率,以提升电池的转换效率。该介电层3的材料例如为氧化物、氮化物,或氧化物与氮化物等的复合材料。The dielectric layer 3 is generally also called a passivation layer (passivation layer), and is arranged on the first surface 21 of the substrate 2, and is used to fill and reduce surface defects, thereby reducing the carrier on the first surface 21 of the substrate 2. The recombination rate at this point can improve the conversion efficiency of the battery. The material of the dielectric layer 3 is, for example, oxide, nitride, or a composite material of oxide and nitride.

本实施例的穿孔31的数量为多个,并且彼此间隔地配置于该介电层3上,进而贯穿该介电层3的上、下表面,所述穿孔31为圆形穿孔(又称为点状穿孔),但不限于此。The number of perforations 31 in this embodiment is multiple, and they are arranged at intervals on the dielectric layer 3, and then penetrate the upper and lower surfaces of the dielectric layer 3, and the perforations 31 are circular perforations (also known as circular perforations). perforation), but not limited thereto.

所述背电场结构4分别对应所述穿孔31而位于该基板2的第一面21处,本实施例的背电场结构4为铝硅(Al-Si)混合材料所形成的p型半导体,其载子浓度大于该基板2,通过背电场结构4的电场作用阻挡电子朝该第一面21的方向移动,使电子被收集于该射极层23,以提升载子收集效率及转换效率。The back electric field structures 4 are respectively located on the first surface 21 of the substrate 2 corresponding to the through holes 31. The back electric field structures 4 in this embodiment are p-type semiconductors formed of aluminum-silicon (Al-Si) mixed materials, which The carrier concentration is higher than that of the substrate 2, and electrons are blocked from moving toward the first surface 21 by the electric field effect of the back electric field structure 4, so that electrons are collected in the emitter layer 23, so as to improve carrier collection efficiency and conversion efficiency.

本发明的电极5设于该介电层3上,并包括至少一位于穿孔31外的第一结构51以及至少一设于穿孔31并连接该基板2的第二结构52。其中,该第一结构51包括一个本体段511以及至少一连接该本体段511与该第二结构52的导电段512。其中该本体段511全部形成于该介电层3上。The electrode 5 of the present invention is disposed on the dielectric layer 3 and includes at least one first structure 51 located outside the through hole 31 and at least one second structure 52 disposed on the through hole 31 and connected to the substrate 2 . Wherein, the first structure 51 includes a body segment 511 and at least one conductive segment 512 connecting the body segment 511 and the second structure 52 . Wherein the body segment 511 is entirely formed on the dielectric layer 3 .

具体而言,本实施例的电极5是由多个重复排列的电极单元50所组成,每一电极单元50分别对应每一穿孔31而配置,每一电极单元50包括一个第一结构51以及一个位于第一结构51所圈绕的区域中并呈圆形的第二结构52。每一电极单元50的第一结构51包括一个围绕成四方形(不以此为限)并与该第二结构52间隔的本体段511以及两个(不以此为限)彼此间隔并连接该本体段511与第二结构52的导电段512。Specifically, the electrode 5 of this embodiment is composed of a plurality of electrode units 50 arranged repeatedly, and each electrode unit 50 is configured corresponding to each through hole 31, and each electrode unit 50 includes a first structure 51 and a A circular second structure 52 located in the area surrounded by the first structure 51 . The first structure 51 of each electrode unit 50 includes a body segment 511 surrounded by a square (not limited to this) and spaced from the second structure 52, and two (not limited to this) spaced from each other and connected to the second structure 51. The body segment 511 and the conductive segment 512 of the second structure 52 .

其中,该第一结构51的本体段511与第二结构52的材质可以相同,也可以不同,本实施例的本体段511与第二结构52的材质皆为铝,并且通过网印方式印刷铝浆而形成,该本体段511与第二结构52之间的区域即为该开口6的区域,该开口6位于该第二结构52的外周。而所述导电段512的材质可以选自铝、银、氧化锌与镍组成群组的任一者,较佳地,本实施例使用的材质为银,并且是通过网印方式印刷银浆而形成,且所述导电段512只填设于该开口6的局部空间,并未将该开口6完全填满。Wherein, the material of the body section 511 of the first structure 51 and the second structure 52 can be the same or different. The materials of the body section 511 and the second structure 52 of this embodiment are both aluminum, and aluminum is printed by screen printing The area between the body section 511 and the second structure 52 is the area of the opening 6 , and the opening 6 is located on the outer periphery of the second structure 52 . The material of the conductive section 512 can be selected from any one of the group consisting of aluminum, silver, zinc oxide and nickel. Preferably, the material used in this embodiment is silver, and the silver paste is printed by screen printing. formed, and the conductive segment 512 is only filled in a partial space of the opening 6 , but does not completely fill the opening 6 .

定义该开口6正投影到该基板2的总面积为一第一面积,所述第一面积是指所述导电段512未填设于开口6时,整个完整的开口6的正投影面积。定义该电极5正投影到该基板2的总面积为一第二面积,且该第二面积大于该第一面积,由于该电极5作为电池的背电极,背电极的面积够大有利于传导电流。The total area of the orthographic projection of the opening 6 onto the substrate 2 is defined as a first area, and the first area refers to the entire orthographic projection area of the entire opening 6 when the conductive segment 512 is not filled in the opening 6 . Define the total area of the positive projection of the electrode 5 onto the substrate 2 as a second area, and the second area is greater than the first area, because the electrode 5 is used as the back electrode of the battery, and the area of the back electrode is large enough to facilitate current conduction .

本发明是通过制作该电极5时,网印铝浆材料并且经由烧结使铝与基板2的硅混合,进而形成背电场结构4。由于该电极5的第一结构51的本体段511与第二结构52之间以该开口6隔开,并且仅通过该导电段512连接,而导电段512的面积小,因此在烧结形成该电极5的过程中,即使该基板2中的硅经由该第二结构52朝该导电段512扩散,也一方面可以通过小面积的导电段512限制硅的扩散路径,另一方面该导电段512中的硅浓度很快就会达到饱和,硅就不会再继续朝该导电段512扩散,进而有效地将硅局限在该基板2的第一面21上,使够多的硅与该电极5中的铝混合,避免该第一面21上产生空腔,因此可以形成厚度厚、品质佳的背电场结构4,从而提升电池的转换效率。并且因为该电极5整体的面积足够,所以能维持良好的导电特性。The present invention forms the back electric field structure 4 by screen printing the aluminum paste material and mixing the aluminum with the silicon of the substrate 2 through sintering when making the electrode 5 . Since the body section 511 of the first structure 51 of the electrode 5 is separated from the second structure 52 by the opening 6, and is only connected through the conductive section 512, and the area of the conductive section 512 is small, the electrode is formed during sintering. 5, even if the silicon in the substrate 2 diffuses toward the conductive segment 512 through the second structure 52, the diffusion path of silicon can be limited by the small-area conductive segment 512 on the one hand, and on the other hand, the conductive segment 512 The concentration of silicon will soon reach saturation, and silicon will no longer continue to diffuse toward the conductive segment 512, thereby effectively confining silicon to the first surface 21 of the substrate 2, so that enough silicon is mixed with the electrode 5. The aluminum is mixed to avoid cavities on the first surface 21, so a thick and high-quality back electric field structure 4 can be formed, thereby improving the conversion efficiency of the battery. And since the entire area of the electrode 5 is sufficient, good electrical conductivity can be maintained.

参阅图10,为扫描式电子显微镜(SEM)拍下的照片,显示本发明的电池在该基板2的背面处形成大量的铝-硅合金,几乎没有空腔的存在,而该背电场结构4的厚度厚、品质佳。Referring to FIG. 10 , it is a photo taken by a scanning electron microscope (SEM), showing that the battery of the present invention forms a large amount of aluminum-silicon alloy at the back side of the substrate 2, almost without the existence of cavities, and the back electric field structure 4 The thickness is thick and the quality is good.

参阅图11,本发明太阳能电池的第二较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的电极单元50只包括一个导电段512。本实施例同样可以达到第一较佳实施例的功效,在此不再说明。Referring to FIG. 11 , the structure of the second preferred embodiment of the solar cell of the present invention is substantially the same as that of the first preferred embodiment, except that the electrode unit 50 of this embodiment only includes one conductive segment 512 . This embodiment can also achieve the effects of the first preferred embodiment, which will not be described here again.

参阅图12,本发明太阳能电池的第三较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的导电段512的左右两侧边皆略微朝外弧突。Referring to FIG. 12, the third preferred embodiment of the solar cell of the present invention has roughly the same structure as the first preferred embodiment, except that the left and right sides of the conductive segment 512 of this embodiment are slightly outward. Arc protrusion.

参阅图13,本发明太阳能电池的第四较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的电极单元50包括四个导电段512,其中两个导电段512为平直线状,另外两个导电段512是自该第一结构51的本体段511朝该第二结构52的方向逐渐扩大。Referring to Fig. 13, the fourth preferred embodiment of the solar cell of the present invention has roughly the same structure as the first preferred embodiment, except that the electrode unit 50 of this embodiment includes four conductive segments 512, two of which are The first conductive segment 512 is flat and linear, and the other two conductive segments 512 gradually expand from the body segment 511 of the first structure 51 toward the direction of the second structure 52 .

参阅图14,本发明太阳能电池的第五较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的电极单元50只包括一个导电段512,而且该导电段512呈螺旋状延伸而连接该第一结构51的本体段511与该第二结构52。Referring to Fig. 14, the fifth preferred embodiment of the solar cell of the present invention has roughly the same structure as the first preferred embodiment, except that the electrode unit 50 of this embodiment only includes one conductive segment 512, and the The conductive segment 512 extends in a spiral shape to connect the body segment 511 of the first structure 51 and the second structure 52 .

参阅图15,本发明太阳能电池的第六较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的第一结构51的本体段511与第二结构52所界定出的开口6为环形(不以此为限),而且第一结构51只包括一个导电段512,该导电段512也是环形(不以此为限)并将整个开口6的空间全部填满。该本体段511与第二结构52的材质为铝,该导电段512的材质为银,通过该导电段512将该第二结构52包围住并与该本体段511隔开,并通过在太阳能电池烧结时,硅对银扩散性不佳的性质,同样可以避免基板中的硅扩散,进而降低空腔率,使后续形成的背电场结构的厚度厚、品质佳,而且因为该导电段512为整个环圈状围绕,与该第一结构51的本体段511及该第二结构52之间的接触面积较大,有助于电流传输,能提升电池的转换效率。Referring to Fig. 15, the sixth preferred embodiment of the solar cell of the present invention has roughly the same structure as that of the first preferred embodiment, except that the body section 511 of the first structure 51 of this embodiment and the second structure The opening 6 defined by 52 is ring-shaped (not limited to this), and the first structure 51 only includes a conductive segment 512, which is also ring-shaped (not limited to this), and the space of the entire opening 6 is completely fill up. The material of the body section 511 and the second structure 52 is aluminum, and the material of the conductive section 512 is silver. The second structure 52 is surrounded by the conductive section 512 and separated from the body section 511, and is passed through the solar cell. During sintering, the poor diffusivity of silicon to silver can also avoid the diffusion of silicon in the substrate, thereby reducing the cavity ratio, so that the thickness of the subsequent back electric field structure is thick and the quality is good, and because the conductive segment 512 is the entire Surrounded in a ring shape, the contact area with the body section 511 of the first structure 51 and the second structure 52 is larger, which is conducive to current transmission and can improve the conversion efficiency of the battery.

由以上说明可知,本发明不需限定导电段512的数量及形状,而且当导电段512如图7至图14的实施例一至五所示,未将开口6填满时,该导电段512的材质可以与第二结构52相同或不同,因为该第二结构52与该第一结构51的本体段511被该开口6隔开,并且仅以导电段512相连接,如此就可以减少基板2中的硅的扩散路径,降低硅的扩散率。当然,若导电段512的材质不同于第二结构52,而且导电段512材质与基板2材质的互溶性小于第二结构52与基板2材质的互溶性时,则导电段512局限硅扩散的效果更佳,例如:银、氧化锌或镍等材料与硅的互溶性小于铝与硅的互溶性,因此导电段512选用银、氧化锌或镍时,更能有效地避免硅的扩散。但若导电段512的设计如图15的实施例六所示,将开口6填满时,则导电段512的材质必然要与第二结构52不同,才能达到避免扩散的目的。至于本发明各个实施例中的第一结构51的本体段511材质,可以相同于导电段512的材质,也可以不相同。As can be seen from the above description, the present invention does not need to limit the number and shape of the conductive segment 512, and when the conductive segment 512 does not fill the opening 6 as shown in the first to fifth embodiments of Figures 7 to 14, the conductive segment 512 The material can be the same as or different from the second structure 52, because the second structure 52 is separated from the body segment 511 of the first structure 51 by the opening 6, and is only connected by the conductive segment 512, so that the substrate 2 can be reduced. The diffusion path of silicon reduces the diffusion rate of silicon. Of course, if the material of the conductive segment 512 is different from that of the second structure 52, and the mutual solubility of the material of the conductive segment 512 and the material of the substrate 2 is smaller than that of the second structure 52 and the material of the substrate 2, the effect of the conductive segment 512 limiting silicon diffusion More preferably, for example, the miscibility of silver, zinc oxide or nickel with silicon is less than that of aluminum and silicon, so when the conductive segment 512 is made of silver, zinc oxide or nickel, the diffusion of silicon can be avoided more effectively. However, if the conductive section 512 is designed as shown in the sixth embodiment of FIG. 15 to fill the opening 6 , the material of the conductive section 512 must be different from that of the second structure 52 to avoid diffusion. As for the material of the body section 511 of the first structure 51 in various embodiments of the present invention, it may be the same as that of the conductive section 512 or may be different.

参阅图16、图17,本发明太阳能电池的第七较佳实施例,与该第一较佳实施例的结构大致相同,不同的地方在于:本实施例的穿孔31为左右向延伸的线状穿孔,本实施例的电极5包括至少一个位于穿孔31外的第一结构51以及至少一设于穿孔31并沿着穿孔31延伸的第二结构52,该第一结构51包括一个左右延伸的本体段511以及多个连接该本体段511及该第二结构52的导电段512。其中该本体段511与该第二结构52之间的区域形成至少一开口6,该开口6位于该第二结构52的外周。需要说明的是,图16的导电段512区域加入细点是为了方便辨识,图示仅为示意而非用于限定。Referring to Fig. 16 and Fig. 17, the structure of the seventh preferred embodiment of the solar cell of the present invention is roughly the same as that of the first preferred embodiment, except that the perforation 31 of this embodiment is a line extending left and right. Perforation. The electrode 5 in this embodiment includes at least one first structure 51 located outside the perforation 31 and at least one second structure 52 disposed on the perforation 31 and extending along the perforation 31. The first structure 51 includes a body extending left and right segment 511 and a plurality of conductive segments 512 connecting the body segment 511 and the second structure 52 . At least one opening 6 is formed in the area between the body segment 511 and the second structure 52 , and the opening 6 is located on the outer periphery of the second structure 52 . It should be noted that the addition of fine dots in the area of the conductive segment 512 in FIG. 16 is for the convenience of identification, and the illustration is only for illustration and not for limitation.

本实施例的导电段512彼此间隔,而且只填设于开口6的局部空间。该本体段511与第二结构52的材质皆为铝,该导电段512的材质为银,如此一来,同样可以通过该电极5图案的结构设计配合该导电段512的材质,局限基板2的硅在烧结过程中向外扩散,从而可形成品质佳、厚度厚的背电场结构4。而且第一结构51的本体段511与第二结构52之间通过该导电段512连接,使本体段511与第二结构52之间能直接传输电流,因而具有良好的导电性。The conductive segments 512 in this embodiment are spaced apart from each other, and are only filled in a partial space of the opening 6 . Both the body section 511 and the second structure 52 are made of aluminum, and the conductive section 512 is made of silver. In this way, the structure design of the electrode 5 pattern can also be matched with the material of the conductive section 512 to limit the size of the substrate 2. Silicon diffuses outward during the sintering process, so that a back electric field structure 4 with good quality and thick thickness can be formed. Moreover, the body segment 511 of the first structure 51 is connected to the second structure 52 through the conductive segment 512 , so that current can be directly transmitted between the body segment 511 and the second structure 52 , thus having good electrical conductivity.

参阅图18,本发明太阳能电池的第八较佳实施例,与该第七较佳实施例的结构大致相同,不同的地方在于:本实施例的导电段512将原本形成于该第一结构51的本体段511与第二结构52之间的开口6完全填满。Referring to FIG. 18 , the eighth preferred embodiment of the solar cell of the present invention has substantially the same structure as the seventh preferred embodiment, except that the conductive segment 512 of this embodiment will be originally formed on the first structure 51 The opening 6 between the body segment 511 and the second structure 52 is completely filled.

参阅图19、图20,本发明太阳能电池的第九较佳实施例,与该第八较佳实施例的结构大致相同,不同的地方在于:本实施例的第一结构51的本体段511及导电段512的材质皆为银(图19以假想线示意两者的界线),而该第二结构52的材质为铝,本实施例与前述各个实施例相同,该导电段512是指该第一结构51上邻近且连接该第二结构52的部位。本实施例在制作时,当该介电层3及其上的穿孔31形成之后,首先在该介电层3的表面且在穿孔31的外部网印形成该第一结构51,即可使该本体段511与导电段512一体形成,接着在对应各个穿孔31的部位网印第二结构52,并经由烧结即制作完成。由于本实施例的所述第二结构52之间以银制的第一结构51隔开,因此当基板2的硅由该第二结构52往外扩散时,可受到第一结构51的阻挡,并且因为第二结构52中的硅浓度容易达到饱和,进而局限硅的扩散。Referring to Fig. 19 and Fig. 20, the structure of the ninth preferred embodiment of the solar cell of the present invention is roughly the same as that of the eighth preferred embodiment, the difference lies in: the body section 511 of the first structure 51 and The material of the conductive segment 512 is silver (the boundary between the two is shown by a phantom line in FIG. 19 ), and the material of the second structure 52 is aluminum. This embodiment is the same as the previous embodiments. A portion of a structure 51 adjacent to and connected to the second structure 52 . In this embodiment, when the dielectric layer 3 and the through hole 31 are formed, firstly, the first structure 51 is formed by screen printing on the surface of the dielectric layer 3 and outside the through hole 31, so that the The main body segment 511 and the conductive segment 512 are integrally formed, and then the second structure 52 is screen-printed on the positions corresponding to the respective through holes 31 , and the fabrication is completed through sintering. Since the second structures 52 in this embodiment are separated by the first structures 51 made of silver, when the silicon of the substrate 2 diffuses out from the second structures 52, it can be blocked by the first structures 51, and Because the silicon concentration in the second structure 52 is easy to reach saturation, thereby limiting the diffusion of silicon.

参阅表1,为本实施例与两个比较例的串联电阻(Rs)及空腔率测量结果。比较例1的电池如现有技术的图3、图4所示,比较例2的电池如现有技术的图5、图6所示,由表1的结果可知,本实施例相对于比较例2具有较小的串联电阻,相对于比较例1具有较低的空腔率,因此本实施例是在降低串联电阻与降低空腔率的考量之间取得平衡,当串联电阻及空腔率能够兼顾时,有助于提升电池整体的导电性与光电转换效率。Referring to Table 1, it shows the measurement results of series resistance (Rs) and cavity ratio of this embodiment and two comparative examples. The battery of Comparative Example 1 is shown in Figure 3 and Figure 4 of the prior art, and the battery of Comparative Example 2 is shown in Figure 5 and Figure 6 of the prior art. From the results of Table 1, it can be seen that the present embodiment is relatively 2 has a smaller series resistance, and has a lower cavity ratio compared with Comparative Example 1, so this embodiment is to achieve a balance between reducing the series resistance and reducing the cavity ratio. When the series resistance and the cavity ratio can be When taken into consideration, it helps to improve the overall conductivity and photoelectric conversion efficiency of the battery.

Rs(mΩ)Rs (mΩ) 空腔率Cavity ratio 比较例1Comparative example 1 4.384.38 57.66%57.66% 比较例2Comparative example 2 6.666.66 12.38%12.38% 本发明实施例9Embodiment 9 of the present invention 4.634.63 28.97%28.97%

表1Table 1

需要说明的是,在本发明的线状穿孔实施例中,导电段材质的选用概念与点状穿孔的实施例(实施例一至六)相同,也就是说,若导电段未将开口填满,则导电段的材质可以与第二结构相同或不同,若导电段将开口填满,则导电段的材质必然要与第二结构不同。至于本发明的各个实施例中的第一结构的本体段材质,可以相同于导电段,也可以不相同。由以上说明也可得知,本发明的穿孔形状不需限制,可以包括选自点状穿孔或线状穿孔组成群组的任一者,当然也可以为其它形状。此外,本发明的电极还可以包括至少一条图未示出的主栅线(busbar),但由于该主栅线非本发明的改良重点,因此不再详述。It should be noted that, in the embodiment of the linear perforation of the present invention, the selection concept of the material of the conductive segment is the same as that of the embodiment of the point perforation (embodiments 1 to 6), that is, if the conductive segment does not fill the opening, The material of the conductive segment can be the same as or different from that of the second structure. If the conductive segment fills the opening, the material of the conductive segment must be different from that of the second structure. As for the material of the body section of the first structure in each embodiment of the present invention, it may be the same as the conductive section, or may be different. It can also be known from the above description that the shape of the perforation in the present invention is not limited, and may include any one selected from the group consisting of point perforation and linear perforation, and of course other shapes may also be used. In addition, the electrode of the present invention may also include at least one busbar not shown in the figure, but since the busbar is not the focus of improvement of the present invention, it will not be described in detail.

Claims (10)

1. a solar cell, comprise: substrate, one is located at dielectric layer on this substrate, at least one is configured at perforation and the electrode be located on this dielectric layer of this dielectric layer, it is characterized in that, this electrode comprises at least one and is positioned at the first structure outside this perforation and at least one is located at this perforation and connects the second structure of this substrate, this first structure comprises a body section and at least one connects the conductive segment of this body section and this second structure, and wherein this body section is all formed on this dielectric layer; This solar cell also comprises at least one and to be positioned on this dielectric layer and by this electrode around the opening formed, this conductive segment is configured in this opening; This solar cell also comprises first area and a second area, and this first area is the gross area of this opening orthographic projection to this substrate, and this second area is the gross area of this electrode orthographic projection to this substrate, and this second area is greater than this first area.
2. solar cell according to claim 1, is characterized in that, the material of this second structure and this conductive segment is different from each other.
3. solar cell according to claim 2, is characterized in that, the body section of this first structure and the material of this second structure mutually the same.
4. solar cell according to claim 2, is characterized in that, the body section of this first structure and the material of this conductive segment mutually the same.
5. solar cell according to any one of claim 1 to 4, is characterized in that, this conductive segment is filled at whole space or the local space of this opening.
6. solar cell according to any one of claim 1 to 4, is characterized in that, the material of this conductive segment is selected from any one that silver, zinc oxide and nickel form group.
7. solar cell according to claim 1, is characterized in that, this conductive segment is filled at the local space of this opening, and the material of this conductive segment and this second structure is mutually the same.
8. solar cell according to claim 1, is characterized in that, this perforation is selected from point-like perforation and forms any one of group with linear perforation.
9. solar cell according to claim 8, is characterized in that, the perforation of this point-like is provided with this second structure, and this opening is positioned at the periphery of this second structure.
10. solar cell according to claim 8, is characterized in that, this linear perforation is provided with this second structure, and this opening is positioned at the periphery of this second structure.
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Publication number Priority date Publication date Assignee Title
CN102077359A (en) * 2008-06-26 2011-05-25 三菱电机株式会社 Solar battery cell and process for producing the same
CN102361040A (en) * 2011-11-08 2012-02-22 天威新能源控股有限公司 Solar cell and preparation method thereof

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JP2005150609A (en) * 2003-11-19 2005-06-09 Sharp Corp Method of manufacturing solar cell
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CN102077359A (en) * 2008-06-26 2011-05-25 三菱电机株式会社 Solar battery cell and process for producing the same
CN102361040A (en) * 2011-11-08 2012-02-22 天威新能源控股有限公司 Solar cell and preparation method thereof

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