CN103367469A - Solar battery - Google Patents
Solar battery Download PDFInfo
- Publication number
- CN103367469A CN103367469A CN2012101036872A CN201210103687A CN103367469A CN 103367469 A CN103367469 A CN 103367469A CN 2012101036872 A CN2012101036872 A CN 2012101036872A CN 201210103687 A CN201210103687 A CN 201210103687A CN 103367469 A CN103367469 A CN 103367469A
- Authority
- CN
- China
- Prior art keywords
- conductive segment
- solar cell
- substrate
- electrode
- perforation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Chemical group 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 24
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000007772 electrode material Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 17
- 239000004411 aluminium Substances 0.000 description 15
- 238000005245 sintering Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910000632 Alusil Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
A solar cell, comprising: the dielectric layer is arranged on the substrate, and the dielectric layer is arranged on the substrate. The electrode includes a first structure having a conductive segment and a second structure disposed in the through hole. The opening is located on the dielectric layer and surrounded by the electrode, wherein the conductive segment is configured in the opening. The first area is a total area of the opening orthographically projected to the substrate. The second area is a total area of the electrode orthographic projection to the substrate and is greater than the first area. The electrode can limit the diffusion of the substrate material, so that enough substrate material is mixed with the electrode material to form a back electric field structure with thick thickness and good quality, thereby improving the conversion efficiency of the battery.
Description
Technical field
The present invention relates to a kind of solar cell, particularly relate to a kind of silicon wafer solar cell with local back electric field structure.
Background technology
Consult Fig. 1, be a kind of known solar cells, mainly comprise: a substrate 11, one and this substrate 11 form emitter layer 12, a dielectric layer 13, a plurality of back of the body electric field structure (local back surface field is called for short LBSF) 14 and one back electrode 15 that is formed at the part of this substrate 11 of p-n junctions.
This dielectric layer 13 is formed at 111 places, a back side of this substrate 11, and has a plurality of intervals all around and be circular perforation 131.Described back of the body electric field structure 14 corresponding described perforation 131 and be formed at this 111 places, back side, the carrier concentration of back of the body electric field structure 14 can help to promote carrier collection efficiency and photoelectric conversion efficiency greater than this p-type substrate.And the making of this back electrode 15, mainly be by the wire mark mode with aluminium paste to be coated on the surface of this dielectric layer 13 near whole mode, and the aluminium paste of a part flows in the perforation 131 of this dielectric layer 13, the follow-up back electrode 15 that can form this curing by high temperature sintering (firing), therefore this back electrode 15 has one and is positioned at these dielectric layer 13 surfaces and be the skin section 151 of continuous stratiform, and a plurality of stretching in the perforation 131 and with this substrate 11 contacts the contact site 152 that is connected.In addition, in sintering process, the aluminium paste of inserting in the perforation 131 can mix with the silicon of this substrate 11 formation aluminium silicon (Al-Si) composite material, and then forms described back of the body electric field structure 14.
But find in practice, general sintering temperature is about about 700 ℃ to 800 ℃, under this high temperature, the diffusivity of silicon in aluminium is good, the back electrode 15 of adding this aluminum is whole surface large area setting, for silicon without any the limitation effect, therefore silicon is easy to spread out toward these skin section 151 directions from the contact site 152 of this back electrode 15, so will be unfavorable for carrying on the back the formation of electric field structure 14, because back of the body electric field structure 14 is to pass through aluminium, silicon materials are at these 111 places, back side and corresponding to mixing and form in perforation 131 positions, but silicon reduces so that can be used to form the silicone content of back of the body electric field structure 14 during constantly to outdiffusion, and the alusil alloy that causes being mixed into reduces.
Consult Fig. 2, so will between this place, back side and this back electrode 15, form a cavity (cavity) 10, do not contain any alusil alloy in the scope that cavity 10 forms, if the too high conductive effectiveness that will affect electrode of cavity rate, also can cause in addition thin thickness, the inferior quality of the back of the body electric field structure 14 of sintering formation, and then affect its usefulness.
Except above-mentioned perforation is the battery of circle, also have at present a kind of perforation of dielectric layer of battery to be long wire form to extending, consult Fig. 3, Fig. 4, the back electrode 15 of this kind battery comprises that 153 and three on the main grid line (bus bar) of two strips is subject to the conduction region 154 that main grid line 153 separates, and each conduction region 154 has the skin section 155 and a plurality of contact site 156 that stretches into perforation 131 from this skin section 155 that are arranged in the stratiform on dielectric layer 13 surfaces.Because this back electrode 15 also is that large tracts of land arranges continuously, can't limit to the diffusion of silicon and move, therefore can affect because the cavity rate is high the conductive effectiveness of back electrode 15 and the quality of back of the body electric field structure 14 equally.
Disappearance for the wire of Fig. 3, Fig. 4 perforation battery, at present existing improvement design, such as Fig. 5, shown in Figure 6, this back electrode 15 no longer is large tracts of land and arranges continuously, but having the conductive segment 157 at a plurality of intervals, each conductive segment 157 has a skin section 158 and a contact site 159 that is arranged in perforation 131.Because conductive segment 157 does not directly connect each other, so that can't be again toward continuing diffusion from all directions towards the silicon of skin section 158 diffusions by contact site 159, on the other hand also because conductive segment 157 big or small limited, therefore the silicon concentration in each conductive segment 157 can comparatively fast reach capacity, make silicon no longer spread movement, so just there are more silicon materials to stay this 111 places, back side, and form alusil alloy with aluminium, and then reduce the quality of cavity rate, lifting back of the body electric field structure 14.
Although the structure-improved of Fig. 5, Fig. 6 helps to reduce the cavity rate of wire perforation pattern battery, if but reduce simply the diffusion that back electrode 15 shared areas limit to silicon, but can therefore make the area of back electrode 15 too small, cause on the contrary electrode conductivuty not good, the series resistance of battery is too high, and in Fig. 5, Fig. 6, electric current between adjacent two conductive segments 157 can't directly transmit, and only can be transmitted to main grid line 153 by conductive segment 157 respectively, therefore its current delivery is restricted poorly conductive.
In sum, point-like shown in Figure 1 perforation battery and Fig. 5, the wire shown in Figure 6 battery of boring a hole, how its common problem needing to overcome is for reducing the cavity rate, in addition, when improving the cavity rate problem of wire perforation structure, in the cavity rate and keep between the conductive effectiveness and average out, then be another problem to be solved how.
Summary of the invention
The object of the present invention is to provide a kind of good solar cell that back of the body electric field structure, electrode conductivuty are good, conversion efficiency is good of quality that has.
Solar cell of the present invention, comprise: substrate, one are located at the dielectric layer on this substrate, perforation and electrode of being located on this dielectric layer that at least one is disposed at this dielectric layer, this electrode comprises that at least one is positioned at the first outer structure of this perforation and the second structure that at least one is located at this perforation and connects this substrate, and this first structure comprises that a body section and at least one connect the conductive segment of this body section and this second structure; This solar cell also comprise at least one be positioned on this dielectric layer and by this electrode around the opening that forms, this conductive segment is disposed in this opening.This solar cell also comprises first area and a second area, and this first area is the gross area that this substrate is arrived in this opening orthographic projection, and this second area is the gross area that this substrate is arrived in this electrode orthographic projection, and this second area is greater than this first area.
Solar cell of the present invention, the material of this second structure and this conductive segment differs from one another.
Solar cell of the present invention, the material of the body section of this first structure and this second structure is mutually the same.
Solar cell of the present invention, the body section of this first structure and the material of this conductive segment are mutually the same.
Solar cell of the present invention, this conductive segment are filled at whole spaces or the local space of this opening.
Solar cell of the present invention, the material of this conductive segment comprise any one that is selected from silver, zinc oxide and nickel and forms group.
Solar cell of the present invention, this conductive segment is filled at the local space of this opening, and the material of this conductive segment and this second structure is mutually the same.
Solar cell of the present invention, this perforation comprise any one that is selected from point-like perforation or wire perforation composition group.
Solar cell of the present invention, this point-like perforation is provided with this second structure, and this opening is positioned at the periphery of this second structure.
Solar cell of the present invention, this wire perforation is provided with this second structure, and this opening is positioned at the periphery of this second structure.
Beneficial effect of the present invention is: the body section and this second structure that connect this first structure by this conductive segment, can in high-temperature sintering process, limit the diffusion of this baseplate material, abundant baseplate material is mixed with this electrode material, and then form the back of the body electric field structure that thickness is thick, quality is good, and this electrode has enough areas and conductivity is good.The said structure improvement can promote the conversion efficiency of battery.
Description of drawings
Fig. 1 is a kind of cutaway view of known solar cells;
Fig. 2 is the photo that takes with sweep electron microscope (SEM), mainly shows the cavity in this solar cell;
Fig. 3 is the upward view of another kind of known solar cells;
Fig. 4 is the cutaway view of getting along 4-4 line among Fig. 3;
Fig. 5 is again the upward view of another kind of known solar cells;
Fig. 6 is the cutaway view of getting along 6-6 line among Fig. 5;
Fig. 7 is the upward view of one first preferred embodiment of solar cell of the present invention;
Fig. 8 is the enlarged drawing of taking from the position that the imaginary line institute corral of Fig. 7 goes out;
Fig. 9 is the cutaway view of getting along 9-9 line among Fig. 8;
Figure 10 is the photo that takes with SEM, shows the part of this first preferred embodiment;
Figure 11 is the partial bottom view of one second preferred embodiment of solar cell of the present invention;
Figure 12 is the partial bottom view of one the 3rd preferred embodiment of solar cell of the present invention;
Figure 13 is the partial bottom view of one the 4th preferred embodiment of solar cell of the present invention;
Figure 14 is the partial bottom view of one the 5th preferred embodiment of solar cell of the present invention;
Figure 15 is the partial bottom view of one the 6th preferred embodiment of solar cell of the present invention;
Figure 16 is the partial bottom view of one the 7th preferred embodiment of solar cell of the present invention;
Figure 17 is the cutaway view of getting along 17-17 line among Figure 16;
Figure 18 is the partial bottom view of one the 8th preferred embodiment of solar cell of the present invention;
Figure 19 is the partial bottom view of one the 9th preferred embodiment of solar cell of the present invention;
Figure 20 is the cutaway view of getting along 20-20 line among Figure 19.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples, is noted that in the following description content, and similarly element is to represent with identical numbering.
Consult Fig. 7, Fig. 8, Fig. 9, the first preferred embodiment of solar cell of the present invention comprises: a substrate 2, a dielectric layer 3, at least one perforation 31, a plurality of back of the body electric field structure 4, an electrode 5 and at least one are positioned on this dielectric layer 3 and by the opening 6 that forms that this electrode 5 centers on.
This substrate 2 comprises a first surface 21 respect to one another and one second 22, and this first surface 21 is the back side, and this second 22 is incidence surface, and can be made into matsurface and enter light quantity to improve.Also be provided with an emitter layer 23 that is positioned at these second 22 place and can forms with this substrate 2 p-n junction on this substrate 2, in the present embodiment, this substrate 2 is the p-type silicon substrate, and this emitter layer 23 is the N-shaped semiconductor, but both conductive type can be exchanged when implementing, as long as can form p-n junction.
In addition, a unshowned anti-reflecting layer of figure can be set also on this emitter layer 23, its material is silicon nitride (SiN for example
x) etc., for reducing sun reflection of light, promote the light impingement rate and can reduce the recombination rate (surface recombination velocity is called for short SRV) of surperficial carrier, but the present invention is not take this anti-reflecting layer as necessary.On this battery, also be provided with a unshowned front electrode of figure, be used for cooperating the delivery of electrical energy with battery to arrive the outside with this electrode 5, but because the non-improvement emphasis of the present invention of this front electrode, so no longer explanation.
This dielectric layer 3 generally is called again passivation layer (passivation layer), and be located on the first surface 21 of this substrate 2, be used for filling up, reducing blemish, and then reduce carrier at the recombination rate at first surface 21 places of this substrate 2, to promote the conversion efficiency of battery.The material of this dielectric layer 3 for example is oxide, nitride, or the composite material of oxide and nitride etc.
The quantity of the perforation 31 of present embodiment is a plurality of, and is disposed at each interval on this dielectric layer 3, and then runs through the upper and lower surface of this dielectric layer 3, and described perforation 31 is circular perforations (being called again the point-like perforation), but is not limited to this.
The respectively corresponding described perforation 31 and be positioned at first surface 21 places of this substrate 2 of described back of the body electric field structure 4, the back of the body electric field structure 4 of present embodiment is the formed p-type semiconductor of aluminium silicon (Al-Si) composite material, its carrier concentration is greater than this substrate 2, electric field action block electrons by back of the body electric field structure 4 moves towards these first surface 21 directions, make electronics be collected in this emitter layer 23, to promote carrier collection efficiency and conversion efficiency.
Particularly, the electrode 5 of present embodiment is comprised of the electrode unit 50 of a plurality of repeated arrangement, respectively corresponding each perforation 31 and disposing of each electrode unit 50, each electrode unit 50 comprise first structure 51 and one be arranged in the first structure 51 circles around zone the second rounded structure 52 also.The first structure 51 of each electrode unit 50 comprises that one surrounds into square (not as limit) and with body section 511 and two (not as limit) each intervals at these the second structure 52 intervals and be connected the conductive segment 512 of this body section 511 and the second structure 52.
Wherein, the material of these the first structure 51 body section 511 and the second structure 52 can be identical, also can be different, the body section 511 of present embodiment and the material of the second structure 52 are all aluminium, and printing aluminium paste by the wire mark mode forms, zone between this body section 511 and the second structure 52 is the zone of this opening 6, and this opening 6 is positioned at the periphery of this second structure 52.And the material of described conductive segment 512 can be selected from aluminium, silver, zinc oxide and nickel form group any one, preferably, the material that present embodiment uses is silver, and be to form by wire mark mode printed silver slurry, and 512 local spaces that are filled at this opening 6 of described conductive segment do not fill up this opening 6 fully.
Defining these opening 6 orthographic projections is one first area to the gross area of this substrate 2, when described the first area refers to that described conductive segment 512 is not filled at opening 6, and the frontal projected area of whole complete opening 6.Defining these electrode 5 orthographic projections is a second area to the gross area of this substrate 2, and this second area is greater than this first area, because this electrode 5 is as the back electrode of battery, the area of back electrode is conducive to enough greatly conduction current.
The present invention is when making this electrode 5, wire mark aluminum slurry material and aluminium is mixed via sintering with the silicon of substrate 2, and then form back of the body electric field structure 4.Owing to separate with this opening 6 between the body section 511 of the first structure 51 of this electrode 5 and the second structure 52, and only connect by this conductive segment 512, and the area of conductive segment 512 is little, therefore form in the process of this electrode 5 at sintering, even the silicon in this substrate 2 spreads towards this conductive segment 512 via this second structure 52, also can limit by the conductive segment 512 of small size on the one hand the evolving path of silicon, silicon concentration in this conductive segment 512 will soon reach capacity on the other hand, silicon just can not continue towards 512 diffusions of this conductive segment again, and then effectively silicon is confined on the first surface 21 of this substrate 2, enough silicon is mixed with aluminium in this electrode 5, avoid producing cavity on this first surface 21, therefore it is thick to form thickness, the back of the body electric field structure 4 that quality is good, thereby the conversion efficiency of lifting battery.And because the area of these electrode 5 integral body is enough, so can keep good conductive characteristic.
Consult Figure 10, be the photo that sweep electron microscope (SEM) takes, show that battery of the present invention forms a large amount of aluminium-silicon alloys at the place, the back side of this substrate 2, almost do not have the existence of cavity, the thickness of carrying on the back electric field structure 4 is thick, quality is good and be somebody's turn to do.
Consult Figure 11, the second preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the electrode unit 50 of present embodiment includes only a conductive segment 512.Present embodiment can reach the effect of the first preferred embodiment equally, no longer illustrates at this.
Consult Figure 12, the 3rd preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the limit, the left and right sides of the conductive segment 512 of present embodiment is all slightly prominent towards outer arc.
Consult Figure 13, the 4th preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the electrode unit 50 of present embodiment comprises four conductive segments 512, wherein two conductive segments 512 are straight wire, and two other conductive segment 512 is that the direction towards this second structure 52 enlarges gradually from these the first structure 51 body section 511.
Consult Figure 14, the 5th preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the electrode unit 50 of present embodiment includes only a conductive segment 512, and this conductive segment 512 extends in the shape of a spiral and connects the body section 511 and this second structure 52 of this first structure 51.
Consult Figure 15, the 6th preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the opening 6 that the body section 511 of the first structure 51 of present embodiment and the second structure 52 define is annular (not as limit), and first structure 51 include only a conductive segment 512, this conductive segment 512 also is annular (not as limit) and the space of whole opening 6 is all filled up.The material of this body section 511 and the second structure 52 is aluminium, the material of this conductive segment 512 is silver, this second structure 52 is surrounded and separate with this body section 511 by this conductive segment 512, and by when the solar cell sintering, the character that silicon is not good to silver-colored diffusivity, can avoid equally the silicon diffusion in the substrate, and then reduction cavity rate, make the thickness of back of the body electric field structure of follow-up formation thick, quality is good, and because this conductive segment 512 centers on for whole loop shaped, and the contact area between the body section 511 of this first structure 51 and this second structure 52 is larger, helps current delivery, can promote the conversion efficiency of battery.
By above explanation as can be known, the present invention need not limit quantity and the shape of conductive segment 512, and work as conductive segment 512 shown in the embodiment one to five of Fig. 7 to Figure 14, when opening 6 not being filled up, the material of this conductive segment 512 can be identical or different with the second structure 52, because the body section 511 of this second structure 52 and this first structure 51 is separated by this opening 6, and only is connected with conductive segment 512, so just can reduce the evolving path of the silicon in the substrate 2, reduce the diffusivity of silicon.Certainly, if the material of conductive segment 512 is different from the second structure 52, and the intersolubility of conductive segment 512 materials and substrate 2 materials is during less than the intersolubility of the second structure 52 and substrate 2 materials, then the effect of conductive segment 512 limitation silicon diffusions is better, such as: the intersolubility of the material such as silver, zinc oxide or nickel and silicon is less than the intersolubility of aluminium and silicon, when therefore conductive segment 512 is selected silver, zinc oxide or nickel, more can effectively avoid the diffusion of silicon.If but the design of conductive segment 512 is shown in the embodiment six of Figure 15, when opening 6 was filled up, then the material of conductive segment 512 must be different from the second structure 52, just can reach to avoid the purpose that spreads.As for body section 511 materials of the first structure 51 among each embodiment of the present invention, can be same as the material of conductive segment 512, can be not identical yet.
Consult Figure 16, Figure 17, the 7th preferred embodiment of solar cell of the present invention, roughly the same with the structure of this first preferred embodiment, different places are: the perforation 31 of present embodiment is bored a hole to the wire of extending about being, the electrode 5 of present embodiment comprises that at least one is positioned at 31 outer the first structure 51 and at least one the second structures 52 being located at perforation 31 and extending along perforation 31 of boring a hole, and this first structure 51 comprises the body section 511 of extension about and the conductive segment 512 of this body section 511 of a plurality of connection and this second structure 52.Wherein the zone between this body section 511 and this second structure 52 forms at least one opening 6, and this opening 6 is positioned at the periphery of this second structure 52.Need to prove that it is for conveniently recognized that conductive segment 512 zones of Figure 16 add choice refreshments, diagram only is signal but not is used for limiting.
Consult Figure 18, the 8th preferred embodiment of solar cell of the present invention, roughly the same with the structure of the 7th preferred embodiment, different places are: script is formed at the body section 511 of this first structure 51 to the conductive segment 512 of present embodiment and the opening 6 between the second structure 52 fills up fully.
Consult Figure 19, Figure 20, the 9th preferred embodiment of solar cell of the present invention, roughly the same with the structure of the 8th preferred embodiment, different places are: the first structure 51 body section 511 of present embodiment and the material of conductive segment 512 are all silver (Figure 19 with imaginary line illustrate both boundary line), and the material of this second structure 52 is aluminium, present embodiment is identical with aforementioned each embodiment, and this conductive segment 512 refers to be close to and connect on this first structure 51 position of this second structure 52.Present embodiment is when making, when this dielectric layer 3 and on perforation 31 form after, at first become this first structure 51 on the surface of this dielectric layer 3 and in perforation 31 extranets impression, can make this body section 511 integrally formed with conductive segment 512, namely complete then in corresponding each 31 position wire marks, second structure 52 of boring a hole, and via sintering.Because the first structure 51 with silvery between described second structure 52 of present embodiment separates, therefore when the silicon of substrate 2 during by this second structure, 52 past outdiffusion, can be subject to stopping of the first structure 51, and because the silicon concentration in the second structure 52 reaches capacity easily, and then the diffusion of limitation silicon.
Consult table 1, be series resistance (Rs) and the cavity rate measurement result of present embodiment and two comparative examples.Fig. 3 of comparative example 1 battery such as prior art, shown in Figure 4, the battery of comparative example 2 such as Fig. 5 of prior art, shown in Figure 6, as shown in Table 1, present embodiment has less series resistance with respect to comparative example 2, has lower cavity rate with respect to comparative example 1, therefore present embodiment is to average out reducing between the considering of series resistance and reduction cavity rate, and when series resistance and cavity rate can be taken into account, helps to promote cell integrated conductivity and photoelectric conversion efficiency.
| Rs(mΩ) | The cavity rate | |
| Comparative example 1 | 4.38 | 57.66％ |
| Comparative example 2 | 6.66 | 12.38％ |
| The embodiment of the |
4.63 | 28.97％ |
Table 1
Need to prove, in wire perforation embodiment of the present invention, the embodiment (embodiment one to six) that selects concept and point-like to bore a hole of conductive segment material is identical, that is to say, if conductive segment does not fill up opening, then the material of conductive segment can be identical or different with the second structure, if conductive segment fills up opening, then the material of conductive segment must be different from the second structure.Body section material as for the first structure among each embodiment of the present invention can be same as conductive segment, also can be not identical.Can be learnt also that by above explanation perforation shape of the present invention need not limit, can comprise any one that is selected from point-like perforation or wire perforation composition group, can certainly be other shape.In addition, electrode of the present invention can also comprise the unshowned main grid line of at least one figure (bus bar), but because the non-improvement emphasis of the present invention of this main grid line, so no longer describe in detail.
Claims (10)
1. solar cell, comprise: substrate, one are located at the dielectric layer on this substrate, perforation and electrode of being located on this dielectric layer that at least one is disposed at this dielectric layer, it is characterized in that, this electrode comprises that at least one is positioned at the first outer structure of this perforation and the second structure that at least one is located at this perforation and connects this substrate, and this first structure comprises that a body section and at least one connect the conductive segment of this body section and this second structure; This solar cell also comprise at least one be positioned on this dielectric layer and by this electrode around the opening that forms, this conductive segment is disposed in this opening; This solar cell also comprises first area and a second area, and this first area is the gross area that this substrate is arrived in this opening orthographic projection, and this second area is the gross area that this substrate is arrived in this electrode orthographic projection, and this second area is greater than this first area.
2. solar cell according to claim 1 is characterized in that, the material of this second structure and this conductive segment differs from one another.
3. solar cell according to claim 2 is characterized in that, the material of the body section of this first structure and this second structure is mutually the same.
4. solar cell according to claim 2 is characterized in that, the body section of this first structure and the material of this conductive segment are mutually the same.
5. each described solar cell in 4 according to claim 1 is characterized in that this conductive segment is filled at whole spaces or the local space of this opening.
6. each described solar cell in 4 according to claim 1 is characterized in that the material of this conductive segment is selected from any that silver, zinc oxide and nickel form group.
7. solar cell according to claim 1 is characterized in that, this conductive segment is filled at the local space of this opening, and the material of this conductive segment and this second structure is mutually the same.
8. solar cell according to claim 1 is characterized in that, this perforation is selected from any of point-like perforation and wire perforation composition group.
9. solar cell according to claim 8 is characterized in that, this point-like perforation is provided with this second structure, and this opening is positioned at the periphery of this second structure.
10. solar cell according to claim 8 is characterized in that, this wire perforation is provided with this second structure, and this opening is positioned at the periphery of this second structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210103687.2A CN103367469B (en) | 2012-04-10 | 2012-04-10 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210103687.2A CN103367469B (en) | 2012-04-10 | 2012-04-10 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367469A true CN103367469A (en) | 2013-10-23 |
| CN103367469B CN103367469B (en) | 2016-02-17 |
Family
ID=49368422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210103687.2A Expired - Fee Related CN103367469B (en) | 2012-04-10 | 2012-04-10 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103367469B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169096A (en) * | 1992-11-30 | 1994-06-14 | Sharp Corp | Silicon solar cell for spatial application |
| JP2005150609A (en) * | 2003-11-19 | 2005-06-09 | Sharp Corp | Method of manufacturing solar cell |
| CN102077359A (en) * | 2008-06-26 | 2011-05-25 | 三菱电机株式会社 | Solar battery cell and process for producing the same |
| US20110265866A1 (en) * | 2010-04-28 | 2011-11-03 | Min-Seok Oh | Solar cell and method for manufacturing the same |
| CN102361040A (en) * | 2011-11-08 | 2012-02-22 | 天威新能源控股有限公司 | Solar cell and preparation method thereof |
-
2012
- 2012-04-10 CN CN201210103687.2A patent/CN103367469B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06169096A (en) * | 1992-11-30 | 1994-06-14 | Sharp Corp | Silicon solar cell for spatial application |
| JP2005150609A (en) * | 2003-11-19 | 2005-06-09 | Sharp Corp | Method of manufacturing solar cell |
| CN102077359A (en) * | 2008-06-26 | 2011-05-25 | 三菱电机株式会社 | Solar battery cell and process for producing the same |
| US20110265866A1 (en) * | 2010-04-28 | 2011-11-03 | Min-Seok Oh | Solar cell and method for manufacturing the same |
| CN102361040A (en) * | 2011-11-08 | 2012-02-22 | 天威新能源控股有限公司 | Solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367469B (en) | 2016-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101656273B (en) | Selective emitter solar battery unit and manufacturing method thereof | |
| ES2387949T3 (en) | Solar cell and its manufacturing method | |
| CN102301488B (en) | Solar cell and method of manufacturing the same | |
| US9887312B2 (en) | Solar cell and solar-cell module | |
| KR101108474B1 (en) | Solar cell | |
| CN102683477B (en) | A kind of solar battery selective emission electrode structure and preparation method thereof | |
| WO2016045227A1 (en) | Main-gate-free and high-efficiency back contact solar cell module, assembly and preparation process | |
| CN110828584A (en) | A p-type local back surface field passivation double-sided solar cell and its preparation process | |
| CN101124681A (en) | Contact preparation for emitter-wrapped back-contact silicon solar cells | |
| KR20100102254A (en) | Solar cell and solar cell module | |
| US20110041906A1 (en) | Solar cell | |
| KR20120110283A (en) | Bifacial solar cell | |
| CN103441155A (en) | Solar battery integrating bypass diode and preparation method of solar battery | |
| CN102610666A (en) | MWT (metal wrap through) back-contact solar cell, preparation method and module thereof | |
| CN103811566A (en) | Solar cell with front point contact structure and novel front electrode | |
| TW201340347A (en) | Solar battery | |
| CN205564774U (en) | Photovoltaic installation | |
| CN208570638U (en) | Solar battery grid line structure, solar battery sheet and solar energy stacked wafer moudle | |
| WO2022206068A1 (en) | Solar cell precursor, solar cell preparation method, and solar cell | |
| TWI483411B (en) | Solar cell and its module | |
| CN102130219A (en) | A solar cell structure and manufacturing method thereof | |
| CN103367469A (en) | Solar battery | |
| CN217239477U (en) | Novel solar cell and grid line structure thereof | |
| CN107785444A (en) | Solar battery | |
| CN106298984A (en) | Solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160217 Termination date: 20190410 |