CN102811554A - Base plate for high-power electronic device module and preparation method thereof - Google Patents
Base plate for high-power electronic device module and preparation method thereof Download PDFInfo
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- CN102811554A CN102811554A CN2011101470176A CN201110147017A CN102811554A CN 102811554 A CN102811554 A CN 102811554A CN 2011101470176 A CN2011101470176 A CN 2011101470176A CN 201110147017 A CN201110147017 A CN 201110147017A CN 102811554 A CN102811554 A CN 102811554A
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Abstract
The invention discloses a metal base plate for a high-power electronic device module and a preparation method thereof. A high heat conductivity insulating layer is directly formed on the metal base plate, so that the whole base plate has the characteristics of convenience in manufacturing and low cost and has the advantage that the insulation performance and high heat conductivity of the ceramic base plate are preserved at the same time.
Description
Technical field
The present invention relates to the great-power electronic product scope, particularly a kind of high-power electronic device module is with substrate and preparation method thereof.
Background technology
In electronics industry; Powerful communication road plate or high-power LED light source usually can produce a large amount of heat under operate as normal, these heats must in time be discharged in the environment, otherwise will cause that the electronic original part temperature raises; Influence its operate as normal, sometimes in addition the damage.
For reaching good heat radiation, the substrate that utilizes usually is ceramic substrate or metal substrate.What ceramic substrate was commonly used has two kinds, and a kind of is aluminium oxide (Al2O3), and another kind is a silicon nitride; The conductive coefficient of aluminium nitride is 20-30w/mk; Generally can only be used for less power component encapsulation, the conductive coefficient of silicon nitride can reach 170w/mk, is desirable high heat conduction base plate for packaging material; But its manufacturing cost is high, and the weakness that is difficult to carry out machining has limited its use.
Another kind is a metal substrate; Owing between metal material and its wiring board layer insulating must be arranged, with the isolation of assurance circuit, and the conductive coefficient of this insulating barrier is lower usually; This causes the heat dispersion of whole metal substrate to descend, well below the ceramic substrate of silicon nitride.
Summary of the invention
For addressing the above problem, the object of the present invention is to provide a kind of good heat conductivity, the high-power electronic device module that has good electrical insulation properties again is with substrate and preparation method thereof.
For achieving the above object, technical scheme of the present invention is: a kind of high-power electronic device module is used substrate, comprises high heat conductive metal substrate and is fixedly connected on the high thermal conductivity insulating layer on the said metal substrate.
Preferably, said high thermal conductivity insulating layer is diamond, diamond, DLC, carborundum, silicon nitride or aluminium nitride.
Preferably, said metal substrate is that conductive coefficient is at 50w/mk and above sheet metal.
Preferably, said high thermal conductivity insulating layer be arranged at the one side, two sides, three of said metal substrate, on four sides, five or all faces.
Preferably, comprise also being used to weld and the high heat conductive metal circuit layer that is connected led module that said metallic circuit layer is fixedly connected on the said high thermal conductivity insulating layer.
Preferably, said metal substrate is provided with fixing hole, and the sidewall of said fixing hole is provided with said high thermal conductivity insulating layer.
Preferably, the thickness of high thermal conductivity insulating layer is 1 micron to 100 microns, and its effective thermal conductivity is more than 25W/mk reaches.
Preferably, be provided with Gold plated Layer above the said metallic circuit layer.
A kind of high-power electronic device module may further comprise the steps with the preparation method of substrate,
The first step, the preparation of metal substrate;
Second step is the one side of metal substrate, two sides, three, on four sides, form the high thermal conductivity insulating layer on five or all faces.
Preferably, said second step is adopted the method preparation of chemical deposition or mechanical compaction.
Adopt the beneficial effect of present technique scheme to be: on metal substrate, directly to generate the high thermal conductivity insulating layer; Make whole base plate both have metal substrate and be convenient to process and cheap characteristic, have the advantage that ceramic substrate insulation property and high thermal conductivity are taken into account simultaneously again.
Description of drawings
Fig. 1 is the sketch map of a kind of high-power electronic device module of the present invention with substrate embodiment 1;
Fig. 2 is the sketch map of a kind of high-power electronic device module of the present invention with substrate embodiment 2;
Fig. 3 is the sketch map of a kind of high-power electronic device module of the present invention with substrate embodiment 3;
Fig. 4 is the sketch map of a kind of high-power electronic device module of the present invention with substrate embodiment 4;
Fig. 5 is the sketch map of a kind of high-power electronic device module of the present invention with substrate embodiment 5.
The numeral corresponding component title represented among the figure with letter:
1. metal substrate 2. high thermal conductivity insulating layers 4. metallic circuit layer
5. solder mask 6.LED chip 8. Gold plated Layer 11. fixing holes.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation.
As shown in Figure 1, a kind of high-power electronic device module is used substrate, comprises high heat conductive metal substrate 1 and is fixedly connected on the high thermal conductivity insulating layer 2 on said metal substrate 1 bottom surface.Said metal substrate 1 is provided with fixing hole 11; On said metal substrate 1, be provided with one deck Gold plated Layer 8, can directly be total to anode (or common cathode) welding led chip 6 above the Gold plated Layer 8, this installation mode makes the part of metal substrate as circuit; Structure is simpler; Omitted circuit layer and insulating barrier, radiating effect is better, Gold plated Layer 8 the further electrical connection properties that has improved between led chip 6 and the metal substrate 1 is set.
Above-mentioned high thermal conductivity insulating layer 2 is a kind of in diamond, diamond, DLC, carborundum, silicon nitride or the aluminium nitride.
Said metal substrate 1 is that conductive coefficient is at 50w/mk and above sheet metal, like satisfactory copper, silver, aluminium or other alloy.
Present embodiment forms one deck high thermal conductivity insulating layer 2 in the bottom surface of metal substrate 1; Make the good electric insulation of formation between metal substrate 1 and other circuit or the radiator; And the conductive coefficient of high thermal conductivity insulating layer 2 reach 25w/mk and more than; Heat conductivility is excellent, makes whole base plate both have metal substrate and is convenient to process and cheap characteristic, has the advantage that ceramic substrate insulation property and high thermal conductivity are taken into account simultaneously again.
As shown in Figure 2, embodiment 1,
As shown in Figure 1, a kind of high-power electronic device module is used substrate, comprises high heat conductive metal substrate 1 and is fixedly connected on the high thermal conductivity insulating layer 2 on said metal substrate 1 upper surface.Said metal substrate 1 is provided with fixing hole 11; On said high thermal conductivity insulating layer 2, be provided with layer of metal circuit layer 4, can directly be total to anode (or common cathode) welding led chip 6 above the metallic circuit layer 4, this installation mode makes high thermal conductivity insulating layer 2 as the insulating barrier between metallic circuit layer 4 and the metal substrate; The function that has electrical isolation and high heat dispersion simultaneously; Structure is simpler, has omitted the insulating barrier of traditional low heat conduction coefficient, and radiating effect is better.
Above-mentioned high thermal conductivity insulating layer 2 is a kind of in diamond, diamond, DLC, carborundum, silicon nitride or the aluminium nitride.
Said metal substrate 1 is that conductive coefficient is at 50w/mk and above sheet metal, like satisfactory copper, silver, aluminium or other alloy.
Present embodiment forms one deck high thermal conductivity insulating layer 2 in the bottom surface of metal substrate 1; Make the good electric insulation of formation between metal substrate 1 and other circuit or the radiator; And the conductive coefficient of high thermal conductivity insulating layer 2 reach 25w/mk and more than; Heat conductivility is excellent, makes whole base plate both have metal substrate and is convenient to process and cheap characteristic, has the advantage that ceramic substrate insulation property and high thermal conductivity are taken into account simultaneously again.
Embodiment 3,
As shown in Figure 3, all the other are identical with embodiment 1, and difference is that the medial surface of the fixing hole 11 of metal substrate 1 also is processed with high thermal conductivity insulating layer 2, make electrical insulation properties of the present invention more excellent, more convenient installation and circuit configuration.
As shown in Figure 4; All the other are identical with embodiment 2; Difference is that metal substrate 1 is covered by high thermal conductivity insulating layer 2 fully, and metallic circuit layer 4 directly is fixedly connected on the high thermal conductivity insulating layer 2; The electric insulating quality of present embodiment is better, can mate different electronic devices and components more flexibly and use.
As shown in Figure 5; Metal substrate 1 is covered by high thermal conductivity insulating layer 2 fully; Metallic circuit layer 4 directly is fixedly connected on the high thermal conductivity insulating layer 2, is coated with Gold plated Layer 8 on the surface of metallic circuit layer 4, and main purpose is in order to improve the q&r of welding; Led chip 6 or other high performance components are directly welded on the said Gold plated Layer 8, and all the other exposed parts of Gold plated Layer 8 are coated with solder mask 5 or green oil.In the present embodiment, be processed with fixing hole 11 on the metal substrate 1, the inwall of fixing hole 11 also is processed with high thermal conductivity insulating layer 2.
In the foregoing description, said metal substrate 1 is provided with fixing hole, and the sidewall of said fixing hole is provided with said high thermal conductivity insulating layer 2.Make the insulation property of metal substrate 1 more excellent.
A kind of high-power electronic device module may further comprise the steps with the preparation method of substrate,
The first step, the preparation of metal substrate;
Second step is the one side of metal substrate, two sides, three, on four sides, form the high thermal conductivity insulating layer on five or all faces.This step adopts the method preparation of chemical deposition or mechanical compaction.
Adopt the beneficial effect of present technique scheme to be: on metal substrate, directly to generate the high thermal conductivity insulating layer; Make whole base plate both have metal substrate and be convenient to process and cheap characteristic, have the advantage that ceramic substrate insulation property and high thermal conductivity are taken into account simultaneously again.
Above-described only is preferred implementation of the present invention, should be pointed out that for the person of ordinary skill of the art, under the prerequisite that does not break away from the invention design, can also make some distortion and improvement, and these all belong to protection scope of the present invention.
Claims (10)
1. a high-power electronic device module is used substrate, it is characterized in that, comprises high heat conductive metal substrate and is fixedly connected on the high thermal conductivity insulating layer on the said metal substrate.
2. high-power electronic device module according to claim 1 is used substrate, it is characterized in that, said high thermal conductivity insulating layer is diamond, diamond, DLC, carborundum, silicon nitride or aluminium nitride.
3. high-power electronic device module according to claim 1 is used substrate, it is characterized in that, said metal substrate is that conductive coefficient is at 50w/mk and above sheet metal.
4. use substrate according to the arbitrary described high-power electronic device module of claim 1 to 3, it is characterized in that, said high thermal conductivity insulating layer be arranged at the one side, two sides, three of said metal substrate, on four sides, five or all faces.
5. use substrate according to the arbitrary described high-power electronic device module of claim 1 to 3, it is characterized in that, comprise also being used to weld and the high heat conductive metal circuit layer that is connected led module that said metallic circuit layer is fixedly connected on the said high thermal conductivity insulating layer.
6. high-power electronic device module according to claim 4 is used substrate, it is characterized in that, said metal substrate is provided with fixing hole, and the sidewall of said fixing hole is provided with said high thermal conductivity insulating layer.
7. high-power electronic device module according to claim 4 is used substrate, it is characterized in that, the thickness of high thermal conductivity insulating layer is 1 micron to 100 microns, and its effective thermal conductivity is more than 25W/mk reaches.
8. high-power electronic device module according to claim 5 is used substrate, it is characterized in that, is provided with Gold plated Layer above the said metallic circuit layer.
9. a high-power electronic device module is characterized in that with the preparation method of substrate, may further comprise the steps,
The first step, the preparation of metal substrate;
Second step is the one side of metal substrate, two sides, three, on four sides, form the high thermal conductivity insulating layer on five or all faces.
10. high-power electronic device module according to claim 8 is characterized in that with the preparation method of substrate said second step is adopted the method preparation of chemical deposition or mechanical compaction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101470176A CN102811554A (en) | 2011-06-02 | 2011-06-02 | Base plate for high-power electronic device module and preparation method thereof |
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| CN2011101470176A CN102811554A (en) | 2011-06-02 | 2011-06-02 | Base plate for high-power electronic device module and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098648B (en) * | 2016-07-07 | 2018-05-18 | 乐健科技（珠海）有限公司 | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method |
| CN109168252A (en) * | 2018-10-26 | 2019-01-08 | 业成科技（成都）有限公司 | Circuit board and preparation method thereof |
| CN111212517A (en) * | 2020-01-07 | 2020-05-29 | 深圳市江霖电子科技有限公司 | Three-dimensional ceramic-based circuit board |
| WO2023202174A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳Tcl新技术有限公司 | Pcb and manufacturing method therefor |
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| CN201155734Y (en) * | 2008-02-04 | 2008-11-26 | 保定市宝新世纪路灯厂 | Direct radiation LED lamp wick |
| CN101335415A (en) * | 2007-06-28 | 2008-12-31 | 萧文钦 | Manufacturing process of high-power LED light seat cooling construction and product thereof |
| CN101606446A (en) * | 2006-12-26 | 2009-12-16 | 株式会社捷太格特 | Mulitilayer circuit board and motor drive circuit substrate |
| CN101614333A (en) * | 2009-03-23 | 2009-12-30 | 广州南科集成电子有限公司 | High-efficiency radiating LED illumination light source and manufacture method |
| US20100032705A1 (en) * | 2008-08-05 | 2010-02-11 | Samsung Electro-Mechanics Co. Ltd. | Light emitting diode package and method of manufacturing the same |
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2011
- 2011-06-02 CN CN2011101470176A patent/CN102811554A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101606446A (en) * | 2006-12-26 | 2009-12-16 | 株式会社捷太格特 | Mulitilayer circuit board and motor drive circuit substrate |
| CN101335415A (en) * | 2007-06-28 | 2008-12-31 | 萧文钦 | Manufacturing process of high-power LED light seat cooling construction and product thereof |
| CN201155734Y (en) * | 2008-02-04 | 2008-11-26 | 保定市宝新世纪路灯厂 | Direct radiation LED lamp wick |
| US20100032705A1 (en) * | 2008-08-05 | 2010-02-11 | Samsung Electro-Mechanics Co. Ltd. | Light emitting diode package and method of manufacturing the same |
| CN101614333A (en) * | 2009-03-23 | 2009-12-30 | 广州南科集成电子有限公司 | High-efficiency radiating LED illumination light source and manufacture method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098648B (en) * | 2016-07-07 | 2018-05-18 | 乐健科技（珠海）有限公司 | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method |
| CN109168252A (en) * | 2018-10-26 | 2019-01-08 | 业成科技（成都）有限公司 | Circuit board and preparation method thereof |
| CN111212517A (en) * | 2020-01-07 | 2020-05-29 | 深圳市江霖电子科技有限公司 | Three-dimensional ceramic-based circuit board |
| WO2023202174A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳Tcl新技术有限公司 | Pcb and manufacturing method therefor |
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Application publication date: 20121205 |