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CN102714146A - 用以修改晶圆边缘与斜面沉积的遮蔽环 - Google Patents

用以修改晶圆边缘与斜面沉积的遮蔽环 Download PDF

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CN102714146A
CN102714146A CN2010800551875A CN201080055187A CN102714146A CN 102714146 A CN102714146 A CN 102714146A CN 2010800551875 A CN2010800551875 A CN 2010800551875A CN 201080055187 A CN201080055187 A CN 201080055187A CN 102714146 A CN102714146 A CN 102714146A
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shield ring
ring
wafer
basal surface
deposition
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D·杜鲍斯
M·阿优伯
R·金
A·班塞尔
M·福多尔
B·恩古耶
郑兆辉
于航
C·陈
G·巴拉苏布拉马尼
D·帕德希
J·罗查
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Applied Materials Inc
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Abstract

本发明的实施例考量一种遮蔽环，该遮蔽环在晶圆的边缘上提供增加的或减少的且更均匀的沉积。通过从该遮蔽环的顶表面和/或底表面移除材料，可实现增加的边缘沉积及斜面覆盖率。在一个实施例中，通过在该底表面上提供凹陷狭槽，来减少该底表面上的材料。通过增加该遮蔽环的材料量，可减少边缘沉积及斜面覆盖率。另一种调整晶圆的边缘处的沉积的方法包括增加或减小该遮蔽环的内直径。形成该遮蔽环的材料亦可变化，以改变晶圆的边缘处的沉积量。

Description

用以修改晶圆边缘与斜面沉积的遮蔽环
发明背景
发明领域
本发明实施例有关于遮蔽环的修改，该些修改增进或以其它方式影响晶圆边缘及斜面上的制程气体的沉积。
现有技术的描述
热化学气相沉积(CVD)及等离子体增强化学气相沉积是用于在半导体晶圆上沉积材料薄膜的众多制程中的几种方法。为了使用热化学气相沉积来处理晶圆，需提供配备有基板支撑件的真空腔室，该基板支撑件被配置成接收晶圆。在典型的CVD腔室中，利用机械叶片(robot blade)将晶圆置入或移出腔室，并且在处理过程中以晶圆支撑件支撑该晶圆。透过位于晶圆上方的气体歧管面板输送前体气体进入该真空腔室，并将该晶圆加热至通常在约250℃至650℃的范围内的制程温度。前体气体在已加热的晶圆表面上进行反应，而在晶圆表面上沉积薄层并形成挥发性的副产物气体，且经由腔室排放系统抽除该些副产物气体。在热化学气相沉积制程中，可使用加热器(诸如电阻型加热器)来加热晶圆。在等离子体增强化学气相沉积制程(PECVD)中，设置一个或多个射频(RF)电极来为气体提供能量以形成等离子体。等离子体提供用以激活前体及形成薄膜层的热量。
晶圆处理的主要目标是获得最大的可用表面积，进而从每个晶圆尽可能地产出最大的芯片数量。半导体芯片制造商近来的要求更强调此目标，以使已处理的晶圆上的边缘排除量(edge exclusion)减至最小，从而尽可能地减少浪费包含晶圆边缘在内的晶圆表面。必需考虑的一些重要因素包括一些会影响晶圆上沉积的层的均匀度及厚度的处理变数，以及可能附着于晶圆而导致晶圆上所形成的全部或部分器件具有缺陷或报废的污染物。此两项因素皆需受到控制，以使每个已处理的晶圆达到最大的可用表面积。
腔室内的一项颗粒污染来源是沉积在晶圆边缘处或背面上的材料，该些材料会在后续制程中剥离或掉落。晶圆边缘一般是倾斜的，因而难以控制这些表面上的沉积。因此，晶圆边缘处的沉积经常是不均匀的，且金属所沉积之处倾向于有所差别地附着于介电质更胜于附着于硅上。若晶圆的介电层未延伸至该斜面处，则金属可能沉积在硅斜面上，且最终导致金属碎裂或剥落而在腔室内产生不受欢迎的颗粒。此外，化学机械研磨经常用来使涂覆有钨或其他金属的晶圆表面平坦。研磨动作可能导致任何位于边缘及背面表面上的沉积物剥落，而产生不受欢迎的颗粒。
曾采用众多方法来控制处理过程中在晶圆边缘上的沉积。一种方法是采用遮蔽环，以实质地掩蔽或遮蔽晶圆的周长的一部分以免于接触制程气体。使用遮蔽环方法的一项缺点在于，遮蔽环通过掩蔽晶圆的周长的一部分会减少晶圆的总可用表面积。若遮蔽环未能精确地对准该晶圆，则此问题会更严重，且很难做到对准。再者，遮蔽环本身会因为从晶圆边缘吸走(来自电阻和等离子体式热源两者的)热量，而造成晶圆边缘区域中的沉积不均匀。
因此，需要一种改善的遮蔽环，该遮蔽环能提高边缘沉积均匀度且减少颗粒污染的机会。
发明内容
本发明实施例整体上提供一种用以改善晶圆边缘处的沉积的遮蔽环。该遮蔽环的各种参数经调整以改变该遮蔽环所产生的热及等离子体效应，且从而调整晶圆边缘处的材料沉积。
在第一实施例中，本发明是一种用于在沉积制程中遮蔽晶圆的边缘的遮蔽环。该遮蔽环包含环形顶表面及环形底表面，该底表面具有第一部分及环形凹陷狭槽，该第一部分用以与基板支撑件接合，且该环形凹陷狭槽环绕该环形底表面延伸并且在该底表面的该第一部分上方达第一距离。
在进一步实施例中，本发明是一种用于在晶圆上沉积材料的腔室。该腔室具有腔室主体、基板支撑件及遮蔽环，该基板支撑件具有用以支撑晶圆的顶表面，且该遮蔽环被支撑于该基板支撑件的顶表面上。该遮蔽环包含环形顶表面及环形底表面，该底表面具有第一部分及环形凹陷狭槽，该第一部分用以与该基板支撑件的顶表面接合，且该环形凹陷狭槽环绕该环形底表面延伸并且在该底表面的该第一部分上方达第一距离。
在另一实施例中，本发明是一种调整沉积制程中晶圆边缘处的材料沉积的方法。该方法包括：提供遮蔽环，该遮蔽环由材料所形成且具有顶表面及底表面；以及改变该遮蔽环的至少一个参数，以影响该晶圆的边缘处的沉积且改善沉积均匀度。
附图说明
为能详细了解本发明的上述特征，参照数个本发明实施例对以上概述的本发明做更具体描述，且部分实施例绘示于附图中。
图1是腔室的示意剖面图，该图示出遮蔽环的一个实施例及位于非处理位置的基板支撑件。
图2是图1的腔室的示意剖面图，该图示出该遮蔽环及位于处理位置的该基板支撑件。
图3是遮蔽环的一个实施例的俯视图，该遮蔽环被支撑在腔室主体环上。
图4是图3遮蔽环的进一步实施例的销区的部分示意剖面图。
图5是图3遮蔽环的进一步实施例的销区的部分示意剖面图。
为求清楚，尽可能使用相同附图标记来代表各图之间共有的相同元件。且无需进一步说明，便可预期一个实施例中的特征可能并入其他实施例中。
详细描述
本发明的实施例考量一种遮蔽环，该遮蔽环可提高晶圆边缘处的沉积均匀度，同时使晶圆表面的非期望区域上的沉积减至最小。具体而言，实施例包含对遮蔽环进行多种修改，该遮蔽环改变晶圆的边缘排除区上的沉积。该遮蔽环的多个实施例可通过调整该遮蔽环的形状而在晶圆边缘上提供增加或减少的沉积。自遮蔽环的顶表面和/或底表面移除材料，可用来提高边缘沉积及斜面覆盖率(bevel coverage)。在一个实施例中，通过在遮蔽环的底表面上提供凹陷狭槽，减少该遮蔽环的底表面上的材料。在一个实施例中，增加遮蔽环的材料量，以降低边缘沉积的量及斜面覆盖率。调整晶圆边缘处的沉积的其它方法包括增加或减小遮蔽环的内直径，以及调整形成该遮蔽环的材料的成分。例如，可能改变该材料的热传导性，以影响该遮蔽环的热特性。因此，可在热处理制程中控制施加于晶圆边缘区域的热量，以影响该区域中的沉积。可能改变该用以制成遮蔽环的材料的介电常数，以影响该遮蔽环在基于等离子体的制程中的等离子体耦合特性。因此，可控制等离子体增强沉积制程中该等离子体与晶圆边缘区域之间的相互作用，以影响该区域中的沉积。
图1是腔室150的侧剖面图，该腔室150具有基板支撑件13，且该基板支撑件13位于腔室主体100内下降的非处理位置中。利用腔室主体环200支撑遮蔽环4，该腔室主体环200设置于该处理腔室主体100的内表面102上且位于该基板支撑件13及第二环(例如，净化环15)的上方，且该第二环置于该基板支撑件13上。基板支撑件13可由耐化学处理的材料制成(例如铝和/或陶瓷)，且可包含加热元件7(例如电阻加热线圈)，该加热元件7设置于该基板支撑件13内且由加热器电源112提供电力。图1与图2中的基板支撑件13的实施例包含射频(RF)电极17，该电极17可用以在处理区域106中诱发等离子体P(见图2)。该电极17可连接至射频电源108，该射频电源108在电极17与接地之间产生射频电流，且该接地通常是处理腔室主体100的室壁。喷淋头110提供必要的沉积及等离子体气体至用以进行沉积制程所需的处理区域106。视沉积需求，可设置多个真空口12(图中显示一个)且连接至真空源114，以维持处理区域106中的真空环境。在一个实施例中，该遮蔽环4包含多个锥形或截顶锥形的销19(图中显示两个)，该些销19环绕该遮蔽环4的周长等距间隔，且自该遮蔽环4向下延伸。该净化环15包含形成于该净化环15中的至少一个锥形或截顶锥形的对准凹部5及至少一个锥形或截顶锥形的对准狭槽6。虽然本发明显示且描述遮蔽环上具有多个销以及净化环上具有凹部/狭槽，但应了解，本发明亦考量到该些销与凹部/狭槽的耦合件可设置在遮蔽环或净化环任一者上的实施例。本发明亦考量到该些销或该些凹部/狭槽任一者包含多个锥形表面的实施例。更进一步地，虽然显示该遮蔽环与该净化环并用，但在某些实施例中，净化环并非必要，且该对准凹部5及狭槽6可直接形成于基板支撑件13中。
在一个实施例中，该些销19设置成与该对准凹部5及对准狭槽6相接。对准凹部5及对准狭槽6至少与该多个销19中一个相对应的销同宽。该些销19与该对准凹部5及对准狭槽6之间的耦合将由热循环造成的膨胀及收缩或其他原因引起的遮蔽环4的移动限制为小于该对准狭槽6的长度。该些销19亦限制了遮蔽环4相对于净化环15的旋转性移动，进而提供旋转对准。如图1及图2中所示的该些销19较佳具有截顶锥形的形状，从基部朝顶部渐渐变细。该对准凹部5及对准狭槽6具有多个匹配的锥形侧壁而形成较宽的开口部分及较窄的底部分，用以接收该些锥形的销19。因为该些销19的较窄尖端部分可在具有较大的不对准余裕下插入该凹部5及狭槽6的较宽开口部分中，故此种构造允许该两个环之间具有粗略的不对准并可校正该些不对准。因此，使用截顶锥形或锥形的销19来取代非锥形(例如圆柱形)的销以及使用凹部5及狭槽6，在将遮蔽环及净化环接合在一起时，可在该些销19插入凹部5及狭槽6的时候修正因热膨胀或其他因素所导致的该遮蔽环4与净化环15的不对准。当该些销19插入凹部5及狭槽6中，在该销19的表面沿着凹部5及狭缝6所界定的表面滑入时校正了遮蔽环4及净化环15之间的不对准。当该些销19完全插入凹部5及狭槽6中，该两环从而对准，从而在遮蔽环与净化环之间提供精确的位置性及旋转性对准。遮蔽环4可卸除以进行清洁或更换，且随后可精确地再次定位与再对准。因此，停机时间与晶圆破裂机率减至最小。
图3是遮蔽环4的一个实施例的俯视图，该遮蔽环4支撑在腔室主体环200上。腔室主体环200耦合于腔室主体100的内表面102。腔室主体环200包含多个凹部202，该些凹部202形成在该腔室主体环200的内表面220的上部中。遮蔽环4包含多个突出部10，该些突出部10被配置成搁置在该腔室主体环200由该些凹部202所界定出的表面上。较佳地，四个突出部10沿着遮蔽环4的周长等距间隔。当未与净化环15耦合时，可借着使该些突出部10搁置于该些凹部202的表面上，而利用腔室主体环200支撑该遮蔽环4。该些凹部202的尺寸设计成可容许遮蔽环4的热膨胀，且仍保持该遮蔽环4充分地对准该净化环15，使得该些销19留在凹部5及狭槽6的捕获范围内。该些凹部202的侧壁表面亦可呈锥形，以促进遮蔽环4进入该腔室主体环200的期望对准位置中。
图2是腔室的侧剖面图，该图示出该基板支撑件13位于处理位置中。如图所示，与基板支撑件13耦合的该净化环15接触且举起该遮蔽环4。遮蔽环4的该些销19插入净化环15的凹部5及狭槽6中。遮蔽环4从而被举离该腔室主体环200，使得遮蔽环4的该些突出部10被举离该腔室主体环200由该些凹部202所界定的内表面220。在此构造中，遮蔽环4位于晶圆W上方约3至5毫米处，并使晶圆W的周长或边缘的一部分悬空，从而在处理过程中控制晶圆上的沉积。该晶圆W的周长附近的区域有时称为边缘排除区(edge exclusion area)。通过减少边缘排除区，可在晶圆W的更大部分上进行沉积，以在晶圆上形成更多可用的器件。然而，若边缘排除区过小，在晶圆W与基板支撑件13之间可能发生桥接现象(bridging)，进而产生颗粒和/或对晶圆或基板支撑件的损害。
操作时，如图1所示，基板支撑件13起初下降至晶圆传送位置。随后，包含机械叶片(未显示)的晶圆操作器(wafer handler)将晶圆搬运至位于基板支撑件13上方的位置。多个举升销(未显示)将晶圆W举离该机械叶片，且机械叶片缩回。基板支撑件13升高以将晶圆W置于该基板支撑件13上，且随后基板支撑件13进一步升高，使得附接于基板支撑件上的净化环15将遮蔽环4举离该腔室主体环200，且进入处理位置，如图2所示。当净化环15与遮蔽环4耦合时，该些销19插入该对准凹部5及对准狭槽6。该些销19的该些锥形表面沿着该对准凹部5及对准狭槽6的锥形表面滑动，从而促进遮蔽环4与净化环15如期望般地对准。一旦晶圆W位于处理位置，前体气体被送入该腔室处理区域106中，且利用加热元件7或使用惰性气体和/或前体气体与射频电极17形成的等离子体来提供热量。
图4是根据本发明一个实施例的遮蔽环400的示意部分剖面图。遮蔽环400可能是如以上参照图1至图3所述的遮蔽环4。遮蔽环400的此实施例的底表面402基本平坦。该销19自该底表面402向下延伸出，且该突出部10自该遮蔽环400的外周长延伸而出，以用于上述配合图3所讨论的遮蔽环4所述的对准目的。突出部10的底表面与遮蔽环400的底表面402的其余部分基本共面。环形唇部404环绕该遮蔽环400的内周长延伸。唇部404具有底表面406，该底表面位于距该晶圆W的顶表面上方一段距离D1处。在一个实施例中，该距离D1介于约0毫米(接触该晶圆W)至约0.762毫米(约0.030英寸)之间。在一个实施例中，遮蔽环400的底表面402由基板支撑件13的顶表面所支撑，或者若含净化环15(见图2)时由净化环15的顶表面所支撑。唇部404悬伸超过该晶圆W的边缘或斜面B一段距离D2。在一个实施例中，该距离D2介于约0.1毫米至约1.5毫米之间。
图5是根据本发明进一步实施例的遮蔽环500的示意部分剖面图。遮蔽环500可能是如以上参照图1至图3所述的遮蔽环4。遮蔽环500包含环形唇部504，类似于该遮蔽环400的唇部404，该唇部504环绕该遮蔽环的内周长延伸。该销19自该底表面502向下延伸出，且该突出部10自该遮蔽环500的外周长延伸而出，以用于上述参照遮蔽环4所描述的对准目的。在一个实施例中，遮蔽环500的底表面502包含环形凹陷狭槽506，该凹陷狭槽506环绕着遮蔽环500延伸。如图5中所示，在该销19及突出部10的区域内，底表面502的一部分508并未凹入。该部分508与基板支撑件13的顶表面接合，或者如上所述般当含净化环15时则与净化环15的顶表面接合，且提供遮蔽环500的适当定位。
该凹陷狭槽506减少该底表面502上的遮蔽环500的材料，该底表面502面向位于基板支撑件13内部的射频电极17和/或加热元件7。通过减少此区域中的材料量，改变了热耦合特性及等离子体耦合特性。发现到，添加该凹陷狭槽506会造成晶圆W的斜面处增加沉积，且晶圆W的边缘处的膜厚增加。唇部504具有底表面505，该底表面505位于距该晶圆W的顶表面上方一段距离D1处。在一个实施例中，该距离D1介于约0毫米(接触该晶圆W)至约0.762毫米(约0.030英寸)之间。唇部504悬伸超过该晶圆W的边缘或斜面B一段距离D2。在一个实施例中，该距离D2介于约0.1毫米至约1.5毫米之间。如图5中所见，凹陷狭槽506具有顶表面507，该顶表面507位于距该遮蔽环500的底表面502上方一段距离或深度D3处。在一个实施例中，该距离D3介于约0毫米(如同遮蔽环400)至几乎为遮蔽环500的整个厚度之间。该凹陷狭槽506延伸径向长度L1。在一个实施例中，该凹陷狭槽506的径向长度L1介于约0.254毫米(0.10英寸)至可延伸到接近遮蔽环500的外直径之间。在一些实施例中，该凹陷狭槽506跨越位于不紧邻该些销19的区域中的整个底表面502延伸。在其它实施例中，该底表面502可能与位于遮蔽环500的外周长区域中的该部分508平齐，以环绕着该遮蔽环的外周长为该遮蔽环提供支撑。
发现到另一种修改晶圆边缘处的沉积及增进该处的均匀度的方法是改变遮蔽环的顶表面上的材料量。如图5所示，通过调整遮蔽环的材料量，可调整在沉积制程期间跨整个晶圆上的沉积及热均匀度。不希望受限于理论的同时，相信减少材料可能通过至少三种方式来影响晶圆边缘上的沉积。第一，减少材料会降低区域的物理性“遮蔽”作用，从而允许沉积产物到达遮蔽环下方的区域。第二，减少材料会降低由遮蔽环所造成的散热效应(heat sinkeffect)，从而允许相对于晶圆内部部分而言该晶圆边缘更均匀地受热。第三，遮蔽环材料的介电常数(氮化铝为8.9)明显高于占据了该移除材料所在空间的真空或气体的介电常数(接近1.0)。降低该晶圆边缘上方空间的整体介电常数允许更高的等离子体耦合，使得晶圆边缘区域能达到更高的沉积速率。
在一些实施例中，图5的遮蔽环500包含针对遮蔽环的顶表面的各种修改。遮蔽环500的顶表面510包含第一外环形部分512，该第一外环形部分512从该遮蔽环500的外周长开始延伸且位于该突出部10的顶部上方。在一个实施例中，该第一外环形部分512相对呈水平。在一些实施例中，遮蔽环500的顶表面510亦包含第二内环形部分514，该第二环形部分514从该外环形部分512向该遮蔽环500的环形唇部504延伸。该内环形部分514与该外环形部分512形成角度α，使得该顶表面510朝向该环形唇部504而向下倾斜。在一个实施例中，该角度α介于约5°至约60°之间。
图5亦显示该遮蔽环500的经修改的顶表面510。在此实施例中，该内环形部分514具有如虚线514’所示的增加的厚度。在遮蔽环500的此实施例中，(514上方的)附加材料使该遮蔽环500在环形唇部504处的轮廓厚度(profile thickness)从第一厚度D4增加至第二厚度D5。在一个实施例中，该第一厚度D4为约0.127毫米(0.005英寸)的最小值，且该第二厚度D5为约1.270毫米(0.050英寸)的最大值。当需要时，通过增加该环形唇部504的区域中的遮蔽环500的材料量，可减少边缘沉积量及斜面覆盖率。遮蔽环500的各项实施例的整体厚度可能相同，或亦可加以改变以影响沉积制程。
亦考量到本发明的多个进一步实施例，包括改变其它的遮蔽环参数以影响边缘排除区中的沉积且增进该区中的沉积均匀度。参阅图3，描述本发明的进一步实施例，虽然应了解到，以下所述的多个特征可与文中所述各种遮蔽环实施例的任一者并用。遮蔽环500的内周长的内直径标示为D。通过提高该直径D，该边缘排除区可能从2毫米减少至0.8毫米。反言之，减少直径D会提高晶圆边缘处的遮蔽环覆盖率，且使该边缘排除区增大至从晶圆边缘起算超过2毫米。参阅图4或图5，如以上参照遮蔽环400及遮蔽环500所述般，调整遮蔽环各种实施例的直径D也能调整该遮蔽环的各种实施例的径向悬伸长度D2。
另一种影响根据本发明实施例的遮蔽环的沉积特性的方法是修改遮蔽环的材料的成分。在一些实施例中，上述该些遮蔽环可由热传导性介电材料制成，例如氮化铝或陶瓷材料。通过改变遮蔽环的材料，可达到更多或更少的边缘沉积及斜面覆盖率。如上所述，在不希望受限于理论的同时，相信遮蔽环的材料的成分的热传导系数k及电特性(即，介电常数)的改变会影响位于遮蔽环下方且紧邻遮蔽环的晶圆边缘区域中的沉积均匀度与沉积速率。
虽然以上内容有关本发明的多个实施例，但在不偏离本发明基本范围的情况下，当可做出本发明的其他或进一步实施例，且本发明范围由后附权利要求所决定。

Claims (15)

1.一种用于沉积腔室中的遮蔽环，包括：
环形主体，具有环形顶表面及环形底表面，所述环形底表面包含：
第一部分，用以与基板支撑件接合；
至少一个销构件，自所述第一部分延伸出；以及
环形唇部，环绕所述遮蔽环的内直径延伸，以遮蔽所述晶圆的边缘，其中所述环形底表面具有设置于所述环形底表面中的环形凹陷狭槽，且所述环形凹陷狭槽环绕所述环形底表面延伸。
2.如权利要求1所述的遮蔽环，其特征在于，所述至少一个销构件具有多个锥形侧面。
3.如权利要求1所述的遮蔽环，其特征在于，所述至少一个销构件呈截顶锥形。
4.如权利要求1所述的遮蔽环，其特征在于，所述环形凹陷狭槽具有约0.254毫米或更大的宽度。
5.如权利要求1所述的遮蔽环，其特征在于，还包括一个或多个突出部，所述突出部位于所述遮蔽环的外直径上。
6.一种用于在晶圆上沉积材料的腔室，包括：
腔室主体；
基板支撑件，具有用于支撑所述晶圆的顶表面；以及
遮蔽环，具有底表面，所述底表面被支撑于所述基板支撑件的所述顶表面上，所述遮蔽环包含：
第一部分，用以与基板支撑件接合；
至少一个销构件，自所述第一部分延伸出；以及
环形唇部，环绕所述遮蔽环的内直径延伸，用以遮蔽所述晶圆的边缘，其中所述底表面具有设置于所述底表面中的环形凹陷狭槽，且所述环形凹陷狭槽环绕所述底表面延伸。
7.如权利要求6所述的腔室，其特征在于，当所述晶圆位于所述基板支撑件上，且所述遮蔽环的所述第一部分与所述基板支撑件接合时，所述环形唇部位于该晶圆上方约0毫米至约0.762毫米之间处。
8.如权利要求6所述的腔室，其特征在于，还包括：
至少一个对准凹槽，位于所述基板支撑件的所述顶表面上，所述至少一个对准凹槽与所述至少一个销耦合，以相对于所述基板支撑件对准所述遮蔽环。
9.如权利要求8所述的腔室，其特征在于，所述至少一个销构件具有多个锥形侧面。
10.如权利要求8所述的腔室，其特征在于，所述至少一个销构件呈截顶锥状。
11.一种调整沉积制程中在晶圆的边缘处的材料沉积的方法，包括：
改变遮蔽环的至少一个参数，以影响所述晶圆的边缘处的沉积且改善沉积均匀度，其中所述遮蔽环具有底表面，所述底表面被支撑于处理腔室内的基板支撑件的顶表面上，所述遮蔽环包含：
第一部分，用以与所述基板支撑件接合；
至少一个销构件，自所述第一部分延伸出；以及
环形唇部，环绕所述遮蔽环的内直径延伸，用以遮蔽所述晶圆的边缘，其中所述底表面具有设置于所述底表面中的环形凹陷狭槽，且所述环形凹陷狭槽环绕所述底表面延伸。
12.如权利要求11所述的方法，其特征在于，改变所述遮蔽环的所述参数包括改变所述遮蔽环的所述底表面上的所述凹陷狭槽的尺寸。
13.如权利要求11所述的方法，其特征在于，改变所述遮蔽环的所述参数包括自所述遮蔽环的顶表面添加或移除材料。
14.如权利要求11所述的方法，其特征在于，改变所述遮蔽环的所述参数包括以下步骤之一：增加所述环形唇部的尺寸，或减小所述环形唇部的尺寸。
15.如权利要求11所述的方法，其特征在于，改变所述遮蔽环的所述参数包括改变用以形成所述遮蔽环的材料的成分。
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