CN102122892B - Supply power adjusting apparatus and semiconductor manufacturing apparatus - Google Patents
Supply power adjusting apparatus and semiconductor manufacturing apparatus Download PDFInfo
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- CN102122892B CN102122892B CN201010546627.9A CN201010546627A CN102122892B CN 102122892 B CN102122892 B CN 102122892B CN 201010546627 A CN201010546627 A CN 201010546627A CN 102122892 B CN102122892 B CN 102122892B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
- H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
- H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M5/275—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/293—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
- G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
- G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
- G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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Abstract
The invention provides a supply power adjusting apparatus and a semiconductor manufacturing apparatus. A semiconductor manufacturing apparatus for performing heat treatment by carrying a substrate holder, on which a plurality of substrates are loaded, into a reacting furnace. The semiconductor manufacturing apparatus is provided with a heater arranged on a circumference of the reacting furnace, and a supply power adjusting apparatus for adjusting a supplying power to the heater. The supply power adjusting apparatus is composed of a power IGBT converter for converting an alternating voltage from an alternating power supply into an alternating power in accordance with the frequency of a control signal and supplying the heater with the alternating power, and a regenerating IGBT converter for regenerating a back electromotive force generated by switching operation of the IGBT converter and returning the back electromotive force to the alternating power supply.
Description
The application is that international filing date is dividing an application of April 3, application number in 2006 are 200680006206.9, denomination of invention is " supply power adjusting apparatus and semiconductor-fabricating device " application for a patent for invention.
Technical field
The present invention relates to the supply power adjusting apparatus of heater fed power and the semiconductor-fabricating device that has used this supply power adjusting apparatus.
Background technology
Fig. 3 represents the supply power adjusting apparatus that existing heater is used.The supply power adjusting apparatus 20 that heater is used, has the receiving end daughter board 2 being connected with AC power 1 at its input, have minute adapted terminal board 6 being connected with heater 7 at its output.Between receiving end daughter board 2 and minute adapted terminal board 6, be connected with power circuit breaker 3, power transformer 4, as the power of power governor, control with thyristor 5.In heater 7, be provided with thermocouple 8 for temperature measuring.
By receiving end daughter board 2 input ac powers 1, by power circuit breaker 3, to power transformer 4 supply powers.At power transformer 4, carry out the power of transformation, by power, controlled with thyristor 5 and control, from minute adapted terminal board 6, supplied with heater 7.Thus, heater 7 is heated, and the temperature of heater 7 changes.By temperature measuring, with thermocouple 8, measure this heter temperature input temp adjuster 9.Thermoregulator 9 is obtained the poor of the mensuration temperature measured with thermocouple 8 by temperature measuring and design temperature, and according to this temperature difference calculating, should supply with the quantity of power of heater 7.This result of calculation is scaled phase control amount, outputs to power control with thyristor 5 as control signal from thermoregulator 9.Power is controlled with thyristor 5 power supply heater 7 corresponding to the sequential with this control signal.
Like this, the supply power adjusting apparatus 20 that heater is used, after detecting heter temperature, by thermoregulator 9, determined the sequential of output control signals, and ordered pair power is controlled and carried out phase control with thyristor 5 during according to this, thereby control heater temperature makes it equal design temperature.
The method of this phase control is shown in Fig. 4.(a) of Fig. 4 illustrates the voltage waveform of AC power, and (b) of Fig. 4 illustrates power ratio control and control the power control thyristor control signal with thyristor.In phase control method, within each cycle of AC power, during when controlling the no-voltage that plays power supply wave shape while producing with thyristor control signal from power, be made as power control period A, be made as B during reactive power during when playing control signal when from no-voltage and producing.And, required high-power maximum power while obtaining than temperature stabilization to power supply.Therefore, effective power during temperature stabilization is limited in 60%~80% left and right of maximum power, is reactive power in addition, thereby makes the degradation in efficiency of power supply.
For improving this situation, carried out various trials, the phase advance capacitor that the zero crossing that does not produce reactive power as adopted in principle is controlled, employing power-factor improvement is used, brings up to the ratio of effective power more than 85%.
Zero crossing is controlled, identical with Fig. 3 on circuit, but difference is, generally as power, controls and adopts SSR (solid state relay) rather than thyristor with element, and changed the content of its control signal.The method that this zero crossing is controlled is shown in Fig. 5.(a) of Fig. 5 illustrates the voltage waveform of AC power, and (b) of Fig. 5 illustrates the power control SSR control signal of controlling SSR.The triggering mode that employing makes SSR connect when the no-voltage of power supply wave shape, and using the stipulated time of AC power (A+B) as one-period (circulation timei), by output power in during this period with SSR control signal and switching on during be made as power control period A, will be made as B during the non-energising of consumed power not during in addition.Because zero crossing is controlled just on/off power supply, therefore in principle, do not produce reactive power.
In addition, adopt the control mode of phase advance capacitor to be shown in Fig. 6.The solid line of Fig. 6 (a) represents supply side AC power waveform W1, and dotted line represents to control side power supply wave shape W2.In addition, Fig. 6 (b) illustrates power control thyristor control signal.When controlling by this control signal the supply side AC power waveform W1 representing with solid line, during reactive power, B is larger, and therefore, the power control example during P1 of phase angle is as being only limited in 70%.But, when with power, control with thyristor control signal controlling by phase advance capacitor make phase place leading the control side power supply wave shape W2 dotting time, during reactive power, B ' reduces the leading amount power of phase angle P2, power factor improves on the surface, and power is controlled and is increased to 90%.
But, in the situation that zero crossing is controlled, owing to power being controlled with element, adopt the high speed power switched control such with insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) to compare with semiconductor the SSR that turn-on voltage is larger, existed the problem of the response deterioration that makes heter temperature.In addition, in the situation that adopting phase advance capacitor, owing to there being the compensation of phase advance capacitor, need to carry out the power adjustments being limited reaching maximum power curve before.This is because owing to carrying out phase lead compensation, just also will carry out phase-lag compensation as being raised to suddenly maximum power.Therefore, the convenience of use worsens.
Summary of the invention
As mentioned above, at existing employing SSR, as power, control with in the supply power adjusting apparatus of element, carry out zero crossing while controlling temperature power being controlled with thyristor, exist the problem that the response of temperature worsens.In addition, in the situation that adopting phase advance capacitor, must carry out the power adjustments that the curve to reaching before maximum power is limited, thereby the convenience of using worsens.Further, although both can share, power source change and load variations are not taked to any measure, therefore exist the problem for the stability deterioration of power source change and load variations.
The present invention makes for solving the problem of above-mentioned prior art, its object be to provide a kind of small-sized, temperature-responsive is good, to the stability of power source change and load variations also good, supply power adjusting apparatus and semiconductor-fabricating device that ease of use is good.
According to mode of the present invention, a kind of semiconductor-fabricating device is provided, the keeper that has loaded a plurality of substrates is sent in reacting furnace and heat-treated, it is characterized in that: have and be arranged on above-mentioned reacting furnace heater and the supply power adjusting apparatus of adjusting to the supply power of above-mentioned heater around, above-mentioned supply power adjusting apparatus comprises: IGBT converter, by the AC voltage conversion of AC power for take the zero cross point AC power that generate as benchmark, corresponding with the frequency of control signal of this alternating voltage, to above-mentioned heater fed; Variations in temperature checkout gear, detects the variations in temperature of above-mentioned heater; Power source change checkout gear detects the power source change of above-mentioned AC power from the alternating voltage of supplying with above-mentioned supply power adjusting apparatus by above-mentioned AC power; Load variations checkout gear detects load variations from supply with the AC power of above-mentioned heater; And frequency varying device, according to each testing result of said temperature change detecting device, above-mentioned power source change checkout gear and above-mentioned load variations checkout gear, in the FEEDBACK CONTROL that said temperature is changed, introduce the feedfoward control of above-mentioned power source change and the FEEDBACK CONTROL to above-mentioned load variations, control the frequency of above-mentioned control signal.
In addition, the invention provides a kind of supply power adjusting apparatus, for regulating being arranged on the supply power of heater of surrounding of the reacting furnace of semiconductor-fabricating device, it is characterized in that, above-mentioned supply power adjusting apparatus comprises: IGBT converter, by the AC voltage conversion of AC power for take the zero cross point AC power that generate as benchmark, corresponding with the frequency of control signal of this alternating voltage, to above-mentioned heater fed; Variations in temperature checkout gear, detects the variations in temperature of above-mentioned heater; Power source change checkout gear detects the power source change of above-mentioned AC power from the AC power of supplying with above-mentioned supply power adjusting apparatus by above-mentioned AC power; Load variations checkout gear detects load variations from supply with the AC power of above-mentioned heater; And frequency varying device, according to each testing result of said temperature change detecting device, above-mentioned power source change checkout gear and above-mentioned load variations checkout gear, in the FEEDBACK CONTROL that said temperature is changed, introduce the feedfoward control of above-mentioned power source change and the FEEDBACK CONTROL to above-mentioned load variations, control the frequency of above-mentioned control signal.
In addition, the invention provides a kind of manufacture method of the semiconductor device based on semiconductor-fabricating device of the present invention, this semiconductor-fabricating device is sent into the keeper that has loaded a plurality of substrates in reacting furnace, by the AC voltage conversion of AC power for take the zero cross point AC power that generate as benchmark, corresponding with the frequency of control signal of this alternating voltage, this transform power is heat-treated to the heater fed of being located at the surrounding of above-mentioned reacting furnace, and the manufacture method of this semiconductor device is characterised in that: the variations in temperature that detects above-mentioned heater; From the alternating voltage of supplying with above-mentioned supply power adjusting apparatus by above-mentioned AC power, detect the power source change of above-mentioned AC power; From supply with the AC power of above-mentioned heater, detect load variations; The testing result, the testing result of above-mentioned power source change and the testing result of above-mentioned load variations that according to said temperature, change, in the FEEDBACK CONTROL that said temperature is changed, introduce the feedfoward control of above-mentioned power source change and the FEEDBACK CONTROL to above-mentioned load variations, control the frequency of above-mentioned control signal.
In addition, the invention provides a kind of power IGBT transducer, it comprises commutation circuit, this commutation circuit has the stacked higher level IGBT of upper and lower two-stage series connection and the IGBT of subordinate, by pulse width modulation controlled, the switching of above-mentioned higher level IGBT and the above-mentioned IGBT of subordinate is controlled, thereby switch from the alternating voltage of AC power output, and adjust the power that offers load from above-mentioned AC power.
In addition, the invention provides a kind of regeneration IGBT transducer, it comprises commutation circuit, this commutation circuit has the stacked higher level IGBT of upper and lower two-stage series connection and the IGBT of subordinate, from AC power, to load, provide power, the back electromotive force that above-mentioned load-side is produced switches with above-mentioned higher level IGBT and the above-mentioned IGBT of subordinate, thereby obtains regenerating power, and this regenerating power is returned to above-mentioned AC power.
In addition, the invention provides a kind of supply power adjusting apparatus, it comprises IGBT transducer and regeneration IGBT transducer for power, wherein, above-mentioned power IGBT transducer, comprise that having the stacked higher level's power of upper and lower two-stage series connection uses the commutation circuit of IGBT with IGBT and subordinate's power, with above-mentioned higher level's power, with IGBT, switch from the positive half wave of alternating voltage and the one of negative half-wave of AC power output, with above-mentioned subordinate power, with IGBT, switch another one, thereby adjust the power that offers load from above-mentioned AC power, above-mentioned regeneration IGBT transducer, comprise that having the stacked higher level of upper and lower two-stage series connection regenerates by the commutation circuit of IGBT and the regeneration use IGBT of subordinate, with above-mentioned higher level's regeneration, with IGBT, switch the positive half wave of back electromotive force and the one of negative half-wave producing from load-side, with the regeneration of above-mentioned subordinate, with IGBT, switch another one and obtain regenerating power, this regenerating power is returned to above-mentioned AC power.
According to the embodiment of the present invention, can obtain a kind of small-sized, temperature-responsive is good, for the stability of power source change and load variations also good, supply power adjusting apparatus and semiconductor-fabricating device that ease of use is good.
Accompanying drawing explanation
Fig. 1 is the block diagram of the supply power adjusting apparatus of one embodiment of the present invention.
Fig. 2 is the concrete block diagram of major part of the supply power adjusting apparatus of one embodiment of the present invention.
Fig. 3 is the block diagram of the supply power adjusting apparatus of conventional example.
Fig. 4 is the key diagram of the existing power supply method based on phase control.
Fig. 5 is the key diagram of the power supply method of controlling based on zero crossing that shares of prior art and embodiment.
Fig. 6 is the key diagram of the existing power-factor improvement based on phase advance capacitor mode.
Fig. 7 is the major part figure of the supply power adjusting apparatus of one embodiment of the present invention.
Fig. 8 means the switching action of major part of supply power adjusting apparatus and the figure of the voltage waveform of each point of one embodiment of the present invention.
Fig. 9 is the specific description figure of power source change checkout gear 22, load variations checkout gear 23 and the changeable frequency circuit 15 of one embodiment of the present invention.
What Figure 10 meaned that the conduct of one embodiment of the present invention manufactures one of semi-conductive operation heat-treats the oblique view of an example of the annealing device of use to Semiconductor substrate.
Figure 11 means the cutaway view of an example of the reacting furnace of one embodiment of the present invention.
Embodiment
Make achievement in research for achieving the above object, the inventor is considering IGBT in the situations such as power consumption, high speed switching, found the most applicable above-mentioned purpose technical scheme, if and then obtained by IGBT, alternating voltage being carried out directly switching just without the opinion with rectification circuit, thereby cause foundation of the present invention.
An execution mode of supply power adjusting apparatus of the present invention is described below.
The supply power adjusting apparatus of present embodiment, using the output of carrying out switching at a high speed the converter moving as power supply heater, has been used as high speed power switched and has controlled the IGBT with element the device of this converter.By IGBT, the alternating voltage of AC power is directly switched and will carry out pulse modulated AC power and supply with heater, make reactive power almost nil, thereby effectively utilized power supply.
As shown in Figure 1, the supply power adjusting apparatus 21 from AC power 1 to heater 7 supply powers, has the receiving end daughter board 2 being connected with AC power 1 at its input, has minute adapted terminal board 6 being connected with heater 7 at its output.AC power 1 is for example the single-phase industrial power of frequency 50/60Hz, AC200V.Heater 7 is for example the resistance heater of molybdenum disilicide system.
On receiving end daughter board 2, connect power circuit breaker 3, and then connect as required power transformer 4.At receiving end daughter board 2 input ac powers 1, by power circuit breaker 3, by power supply power transformer 4.According to the specification of heater 7, sometimes do not use this power transformer 4 yet.In addition, supply power adjusting apparatus 21, also prepares a plurality of IGBT converters 11 sometimes, to heater 7 can be divided into a plurality of regions and carry out respectively power control.
At the secondary side of power transformer 4, also there is input side filter circuit 10, IGBT converter 11, power source change checkout gear 22, load variations checkout gear 23, variations in temperature checkout gear 24, frequency varying device (hereinafter referred to as changeable frequency circuit) 15, outlet side filter circuit 30.By the power after power transformer 4 transformations, by input side filter circuit 10, supply with the IGBT converter 11 of being controlled by changeable frequency circuit 15, and by outlet side filter circuit 30, put on the heater 7 being connected on minute adapted terminal board 6.
Below, with the major part figure of the supply power adjusting apparatus shown in Fig. 7, input side filter circuit 10, outlet side filter circuit 30 and IGBT converter 11 are described.
Input side filter circuit 10 is by filtering mode, to have used the low pass filter of LC, has filtering key element by the structure of the arranged in order of CLC.Coil L is divided into L1-1 and L1-2 and inserts incoming line and common line.In addition, the capacitor C1-1 before LC, for removing high fdrequency component that power supply wave shape is loaded with and for reducing loss, the very little capacitor of electric capacity preferably.The cut-off frequency of low pass filter, considers from the viewpoint of power supply wave shape, noise, and (being the number of times of IGBT conduction and cut-off within 1 second, is 20KHz to be in the present embodiment set as switching frequency.) 1/10~1/40 (500Hz~2KHz).Therefore, can end high frequency component and will supply with reliably heater 7 as the power of object industrial frequency (50Hz or 60Hz) left and right.
Input side filter circuit 10 suppresses because making IGBT converter 11 switch with high speed, high frequency the electromagnetic noise that action produces.Therefore, can be suppressed at the electromagnetic noise of responding in the incoming line of the IGBT converter 11 being connected with AC power 1 side, thereby can prevent from producing noise failure in AC power.
Outlet side filter circuit 30 and input side filter circuit 10 similarly, are by filtering mode, to have used the low pass filter of LC, have filtering key element by the structure of the arranged in order of LCC.Coil L is divided into L2-1 and L2-2 and inserts outlet line and common line.In addition, the capacitor C2-2 after LC, also as described at input side filter circuit 10, is for removing the capacitor of the high fdrequency component that power supply wave shape is loaded with.And then the cut-off frequency of this low pass filter is 500Hz~2KHz too.
Filtering (make its level and smooth) is carried out in 30 pairs of outputs of being switched by IGBT converter 11 and obtaining of outlet side filter circuit, and effectively removes high fdrequency component contained in output.
By above-mentioned IGBT2, with the basic carrier frequency of high speed, high frequency, to exchanging, directly switched.For example the switching instant based on PWM mode, detects zero cross point from the interchange of supply source, take this zero cross point as benchmark, calibration control signal (pwm signal).Then, with the carrier frequency after calibrating, switch the interchange of supply source and obtain pulse modulated wave, being passed through outlet side filter circuit 30 and supply with heater 7.From the control signal of changeable frequency circuit 15 outputs, according to variation (temperature, power, load), change the duty ratio of the control signal on the grid (arm) that is applied to IGBT.
Fig. 8 is the figure that the voltage waveform of the switching action of major part of the supply power adjusting apparatus shown in Fig. 7 and each point ((a)~(e), (f)~(i)) is shown.With Fig. 8, describe the effect of IGBT converter 11 in detail.First, as shown in (a) by the voltage waveform A supply side daughter board TB1 of industrial frequency AC power.The incoming frequency of pwm signal IGBT converter 11 being applied by arm is fixed on to 20KHz (50 μ sec).The upper arm of IGBT2 and underarm are applied respectively to the copped wave portion pwm signal as shown in (b), (c).The output voltage waveforms B of IGBT converter 11, only when IGBT2 conducting, (while applying pwm signal) makes the energising of industrial frequency AC power, when IGBT2 ends, the energising of industrial frequency AC power cut off, and therefore becomes (d) such output waveform.This output is carried out smothing filtering by outlet side filter circuit 30, and by minute adapted terminal board (TB2), exports the voltage waveform C of the little industrial frequency of (e) such distortion from outlet side filter circuit 30.The time of by change IGBT2 conducting like this, is controlled the voltage peak of the service voltage that outputs to final load.Therefore, utilize the pwm signal that IGBT2 is applied using in IGBT converter 11, can not change the frequency of service voltage and only peak value be controlled in 0~70% scope and export to load.
In addition, when making to be applied to the pulsewidth of the upper arm of IGBT2 and the copped wave portion pwm signal of underarm be greater than the pulsewidth shown in above-mentioned (b), (c) as (f), (g), the output voltage waveforms B of IGBT converter 11 becomes (h) such waveform, voltage waveform C to the service voltage of final load output can make voltage peak be greater than the peak value of above-mentioned (e) as (i).
Because the IGBT2 by being assembled in IGBT converter 11 directly switches alternating voltage, therefore the input side at IGBT converter 11 does not need diode full-wave rectifying circuit.
As the IGBT2 that forms the switching device of this IGBT converter 11, be that the grid that voltage is driven has carried out the bipolar power transistor combining, the consumption of grid driving power is applicable to switch at a high speed less.And owing to being high frequency and jumbo element, conducting voltage reduces significantly than MOSFET (SSR).In order to reduce reactive power, with high frequency, control this IGBT2.
Variations in temperature checkout gear 24 detects the variations in temperature of heater 7, by changing corresponding feedback signal with this, outputs to changeable frequency circuit 15.This variations in temperature checkout gear 24 has temperature measuring as temperature sensor with thermocouple 8 with for regulating the thermoregulator 9 of heter temperature.
Temperature measuring arranges required number near heater 7 with thermocouple 8, according to thermo-electromotive force, measure heter temperature.Thermoregulator 9 is obtained the mensuration temperature of the heater 7 being measured to thermocouple 8 by temperature measuring and the temperature difference (variations in temperature) of design temperature, according to this temperature difference, calculate and should supply with the quantity of power of heater 7, and using result of calculation as feedback signal, output to changeable frequency circuit 15.In addition, when temperature anomaly being detected, thermoregulator 9 is gone back output alarm signal.
The variation that power source change checkout gear 22 detects from the power output of input side filter circuit 10, outputs to changeable frequency circuit 15 by changing corresponding feed-forward signal with this.This power source change checkout gear 22 has voltage determination circuit 13 and the supply voltage current feed-forward circuit 14 of the voltage of the output line that is determined at the power pack 12 of the electric current that the output of input side filter circuit 10 flows through, measures input side filter circuit 10.For detecting the variation of power output, supply voltage current feed-forward circuit 14 is obtained the mensuration electric current measured by power pack 12 and is set the poor of difference between currents and the mensuration voltage of being measured by voltage determination circuit 13 and setting voltage.These poor products (power) are exactly power source change.Using this power source change as feed-forward signal, output to changeable frequency circuit 15.
Load variations checkout gear 23 detects the variation of the power output of supplying with heater 7, and outputs to changeable frequency circuit 15 by changing corresponding feedback signal with this.This load variations checkout gear 23 has the voltage determination circuit 17 of the output voltage between lines of measuring outlet side filter circuit 30, the power pack 18 of measuring the electric current that flows through heater 7 and control feedback of voltage and current circuit 16.In order to detect load variations, control feedback of voltage and current circuit 16 and obtain by the voltage determination circuit 17 mensuration voltages of mensuration and the mensuration electric current poor and that measured by power pack 18 of setting voltage and setting difference between currents.These poor products (power) are exactly load variations.Using this load variations as feedback signal, output to changeable frequency circuit 15.
In addition,, for the variation of sensing lead electric current accurately, also power pack 18 can be arranged on to heater 7 one sides by minute adapted terminal board 6 outsides.
By IGBT being carried out to FREQUENCY CONTROL and frequency roughly being changed continuously, thereby control, be applied to the power on heater 7.Changeable frequency amplitude is more powerful controlled better.
FREQUENCY CONTROL based on changeable frequency circuit 15, from changing frequency this point, the VF (variable frequency) controlling with VVVF controls identical.In this FREQUENCY CONTROL, also comprise basic carrier frequency PWM constant and control duty ratio is controlled.Each that VF controls, PWM controls is when 0 voltage, to make IGBT conducting, is all therefore that zero crossing is controlled.
In the supply power adjusting apparatus 21 of above-mentioned execution mode, thermoregulator 9 and changeable frequency circuit 15, control as follows so that the temperature of heater 7 becomes design temperature.
Thermoregulator 9 is obtained the temperature difference of measuring temperature and design temperature, and according to this temperature difference, calculating should be supplied with the quantity of power of heater 7, and result of calculation is outputed to changeable frequency circuit 15.Changeable frequency circuit 15, is applied to IGBT converter 11 by the grid control signal with the frequency corresponding with the output valve of thermoregulator 9.IGBT converter 11 is transformed to the AC power from 10 outputs of input side filter circuit the AC power of the frequency corresponding with the grid control signal of changeable frequency circuit 15, and supplies with heater 7 by outlet side filter circuit 30.By to heater 7 supply powers, the temperature of heater 7 changes.
By such variations in temperature, detect → control calculating → output valve output → temperature variation → variations in temperature detection → ... such closed circuit carries out FEEDBACK CONTROL.Owing to determining output variable by thermoregulator 9 and changeable frequency circuit 15 after detected temperatures state, thereby can carry out well FEEDBACK CONTROL.Therefore, can to heater 7, supply with stable power by proofreading and correct the variations in temperature of heater, and heater 7 can be remained on to predetermined temperature.And, because FREQUENCY CONTROL is that zero crossing is controlled, therefore can there is no the high efficiency control of reactive power.
When as described above heter temperature being carried out to FEEDBACK CONTROL well, if the voltage of AC power 1 changes, this change in voltage will show as curent change and change in voltage in the output at input side filter circuit 10.This curent change and change in voltage, measured by power pack 12 and voltage determination circuit 13, and detected by supply voltage current feed-forward circuit 14.From supply voltage current feed-forward circuit 14, to 15 inputs of changeable frequency circuit, change corresponding control signal with this power.Changeable frequency circuit 15 utilizes this signal, the grid control signal of the frequency that output is corresponding with the difference of power and setting power.This grid control signal is applied to IGBT converter 11 IGBT converter 11 is carried out to FREQUENCY CONTROL.Therefore change in voltage that, can corrected AC power supply 1 is supplied with stable power to heater 7.And, because FREQUENCY CONTROL is that zero crossing is controlled, thereby can there is no the high efficiency control of reactive power.By this feedfoward control, improved from input side filter circuit (AC power) 10 to temperature measuring by the response characteristic of thermocouple 8.
In addition, when as described above heter temperature being carried out to FEEDBACK CONTROL well, if got muddled on heater 7, (such as touching outside air etc.) or the character of heater slightly change and load are changed, and show as the variation of the power output of IGBT converter 11.That is the load voltage that, flows through the load current of heater 7 and put on heater 7 changes.This curent change and change in voltage, detected by power pack 18 and voltage determination circuit 17, and measure by controlling feedback of voltage and current circuit 16.From controlling feedback of voltage and current circuit 16, to 15 inputs of changeable frequency circuit, change corresponding signal with this power.Changeable frequency circuit 15 utilizes this signal, the grid control signal of the frequency that output is corresponding with the difference of power and setting power.This grid control signal is put on to IGBT converter 11 line frequency of going forward side by side to be controlled.Therefore, can change to come to the stable power of heater 7 supply by revising load.And, because FREQUENCY CONTROL is that zero crossing is controlled, can there is no the high efficiency control of reactive power.
This load variations is controlled, and controls and compares with the variations in temperature that detects these 3 steps by disorder → heter temperature variation → thermocouple, for disorder → power changes, detects these 2 steps, therefore can omit the step that thermocouple detects, thereby accelerate response speed.
In the above-described embodiment, in supply power adjusting apparatus 21, there is power source change checkout gear 22, load variations checkout gear 23, variations in temperature checkout gear 24, changeable frequency circuit 15, no matter but which how, as for example regulating to the well-known power governor of load (heater) supply power and the device of output control signal, power source change checkout gear 22, load variations checkout gear 23, variations in temperature checkout gear 24, changeable frequency circuit 15 can be set and be used in combination.
With Fig. 9, with regard to another execution mode explanation changeable frequency circuit 15, according to the variable signal from power source change checkout gear 22, load variations checkout gear 23, variations in temperature checkout gear 24, IGBT is exported the processing of grid control signal.
Power source change checkout gear 22, the voltage that the electric current of by AC/ DC transducer 22a, 22b, power pack 12 being measured respectively, voltage determination circuit 13 are measured is converted to DC from effective value (RMS), by calculator 22c, carried out the calculating of electric current (DC) * voltage (DC)=primary side power, and be input to changeable frequency circuit 15 as primary side power source change feedback signal FB 1.
Load variations checkout gear 23, the voltage that the electric current of by AC/ DC transducer 23a, 23b, power pack 18 being measured respectively, voltage determination circuit 17 are measured is converted to DC from effective value (RMS), by calculator 23c, carried out the calculating of electric current (DC) * voltage (DC)=secondary side power, and be input to changeable frequency circuit 15 as secondary side power source change feedback signal FB2.
Variations in temperature checkout gear 24 will be input to changeable frequency circuit 15 as power setting signal from the signal of thermoregulator 9 outputs.
In structure as above, when changeable frequency circuit 15 being inputted respectively to primary side power source change feedback signal FB1 and secondary side load variations feedback signal FB2, primary side power source change feedback signal FB1 and secondary side load variations feedback signal FB2, by power gain adjuster 15a, 15b, adjust gain, and be reversed to after negative and be input to adder 15f by inverter 15d, 15e.Then, in adder 15f, the feedback signal FB1 ' (FB2 ') during by power output setting signal in advance and feedback signal FB1 (FB2) compare, and its difference is added as power source change (load variations) and power setting signal.
When from variations in temperature checkout gear 24 to changeable frequency circuit 15 power output setting signal, power setting signal is carried out gain-adjusted and is input to adder 15f by power setting fader 15c.When there is power source change or load variations, changeable frequency circuit 15 is added with power setting signal in adder 15f having carried out as described above the primary side power source change feedback signal FB1 of gain-adjusted and the changing unit of secondary side load variations feedback signal FB2, and (IGBT frequency setting signal) output using best power setting signal as grid control signal.
As used in this wise high frequency and jumbo IGBT control with the element of semiconductor variable parallel operation and have introduced in to the FEEDBACK CONTROL of variations in temperature the feedfoward control of power source change and the FEEDBACK CONTROL to load variations as forming high speed power switched, so temperature stability, extremely good to the stability of power conversion and load variations, thereby can make heter temperature obtain very high stability.Especially, mains voltage variations and load variations this point except variations in temperature, have also been introduced, owing to adopting the IGBT as high frequency and large volume element just to become first possibility.
Fig. 2 is the specific description figure of above-mentioned input side filter circuit 10, IGBT converter 11, outlet side filter circuit 30.
Input side filter circuit 10 and outlet side filter circuit 30 are all to consist of conventional filter circuit.That is, input side filter circuit 10 by and the choke ACL1 that is connected in series of incoming line 31 and forming at a plurality of capacitor CF1~CF6 that are connected in parallel between with the incoming line 31 of IGBT converter 11a mono-side and common line 33 by power of choke ACL1.When forming input side filter circuit 10 by conventional filter circuit, can effectively make the electromagnetic noise decay of sewing to input side from IGBT converter 11.
In addition, outlet side filter circuit 30 by and the choke ACL2 that is connected in series of incoming line 32 and a plurality of capacitor CF7~CF12 of being connected in parallel between the outlet line 32 by heater 7 one sides of choke ACL2 and common line 33 form.When forming outlet side filter circuit 30 by conventional filter circuit, can effectively contained high fdrequency component the AC power from 11 outputs of IGBT converter be removed.And, if do not establish the conventional filter of element on common line 33, just can effectively make the spiking component (back electromotive force) of high frequency from common line 33, return to IGBT converter 11b for regeneration by heater 7.Consequently, on common line 33, do not have energy to discharge, can effectively carry out regenerative power, thereby can improve the energy efficiency of AC power 1.
Power consists of the rear class commutation circuit IGBT2 (part for choke) of prime commutation circuit IGBT1, the buffer circuit CRF1 of high speed rectification circuit FRD1, the upper and lower two-stage of connecting, the upper and lower two-stage of connecting with IGBT converter 11a.In Fig. 2, because current flowing has much been prepared two IGBT.As changing method, IGBT converter 11a for power, controls (pulse-width modulation) by PWM as described above and carries out on/off control.The positive and negative judgement action of supply voltage is carried out in regeneration with IGBT converter 11b.Can be preferably that pure resistor load or the pure resistor load with inductive load count the circuit structure regulating time of delay in switching action by load.
High speed rectification circuit FRD1 consists of the high speed rectifier cell that connects the centre cap type of incoming line 31 at centre cap, by the AC rectification of the supply source applying from incoming line 31, be positive half-wave and negative half-wave, and according to polarity, be assigned to higher level and the subordinate of prime commutation circuit IGBT1.
Prime commutation circuit IGBT1 and rear class commutation circuit IGBT2, the IGBT of the Dual-arm being comprised of the upper and lower two-stage of series connection forms.Fly-wheel diode is being connected in parallel in each IGBT.Prime commutation circuit IGBT1 and rear class commutation circuit IGBT2 parallel running, the IGBT by higher level directly switches negative half-wave the IGBT of the positive half-wave ,You subordinate being distributed by high speed rectification circuit FRD1 respectively.
Buffer circuit CRF1 consists of Dual-arm equally, with prime commutation circuit IGBT1 and public connection of rear class commutation circuit IGBT2, in circuit, produce when making to form each IGBT cut-off of these circuit and the electric current that flows through by fly-wheel diode FWD falls as heat exhaustion.
Power is distributed the interchange that puts on input circuit 31 according to polarity by high speed rectification circuit FRD1 with IGBT converter 11a, by prime commutation circuit IGBT1 and rear class commutation circuit IGBT2, switch and obtain AC power, this AC power is put on to outlet side filter circuit 30.In addition, from buffer circuit CRF1, the back electromotive force producing in IGBT converter 11a at power is become to heat loss.
Regeneration with IGBT converter 11b by centre cap, connect common line 33 the high speed rectification circuit FRD2 of centre cap type, the commutation circuit IGBT3 of the Dual-arm of the upper and lower two-stage of connecting, and buffer circuit CRF2, the CRF3 of two single armed types that are connected in parallel at different levels of commutation circuit IGBT3 form.
In this regeneration, use in IGBT converter 11b, beyond being distributed in IGBT converter 11 by high speed rectification circuit FRD2 according to polarity, producing and return to next back electromotive force from common line 33, by the at different levels of commutation circuit IGBT3, according to polarity, directly to exchanging to switch, obtain regenerating power, and this regenerating power is returned to AC power 1 by power IGBT converter 11a, input side filter circuit 10.In addition, in buffer circuit CRF2, CRF3, the back electromotive force producing is become to heat loss in regenerating with IGBT converter 11b.
What one of semi-conductive operation was manufactured in the conduct that Figure 10 illustrates one embodiment of the present invention heat-treats the oblique view of an example of annealing device 110 of the semiconductor-fabricating device of use to Semiconductor substrate.This annealing device 110 is batch-type longitudinal type thermal treatment facility, has the housing 112 of configuration major part.
Back side upside in housing 112 disposes reacting furnace 140.The substrate keeper 130 that has loaded a plurality of substrates is sent in this reacting furnace 140 and heat-treated.
Figure 11 illustrates an example of the cutaway view of reacting furnace 140.This reacting furnace 140 has the reaction tube 142 of quartzy system.This reaction tube 142 is the unlimited drum in sealing bottom, upper end.Below this reaction tube 142, dispose the connecting portion 144 of quartzy system with supporting reaction tube 142.By reaction tube 142 and connecting portion 144, form reaction vessel 143.In addition, the surrounding of the reaction tube except connecting portion 144 142 in reaction vessel 143 disposes heater 146.
The lower open of the reaction vessel 143 being formed by reaction tube 142 and connecting portion 144, to insert substrate keeper 130.This open section (fire door portion) by make fire door sealing plate 148 with the lower surface butt of connecting portion 144 bottom beads sealed closing.Fire door sealing plate 148 is configured to support substrate keeper 130, and can with 130 1 liftings of substrate keeper.Substrate keeper 130 separates with the state of approximate horizontal that multilayer supporting is with gap a plurality of, 25~100 substrates 154 for example, and is seated in reaction tube 142.
On connecting portion 144, be provided with integratedly gas supply port 156 and gas discharge outlet 159 with connecting portion 144.On gas supply port 156, be connected with respectively gas introduction tube 160, on gas discharge outlet 159, be connected with blast pipe 162.
From gas introduction tube 160, import the processing gas of gas supply port 156, by being arranged on, the gas of connecting portion 144 side wall portions imports path 164, nozzle 166 is supplied in reaction tube 142.
Below, the effect of the annealing device 110 forming is as described above described.
In addition, in the following description, form annealing device 110, for the action of each portion of the lining processor of heat-treating, by controller 170, controlled.
First, when the container 116 of having received and kept a plurality of substrates 154 is placed on container plummer 114, by container conveyance apparatus 118, container 116 is transported to container shelf 120 from container plummer 114, is deposited on this container shelf 120.Then, by container conveyance apparatus 118, the container 116 being deposited on this container shelf 120 is carried and is placed on container opener 122, by this container opener 122, the lid of container 116 is opened, and detect by substrate number detector 124 number that leaves the substrate 154 in container 116 in.
Then, by the pliers 132 (Star イ mono-ザ) of substrate charging crane 126, from the container 116 of the position in container opener 122, take out substrate 154 and turn and install to notch position aligner 128.At notch position aligner 128, Yi Bian make substrate 154 rotations, Yi Bian detect and aligned notches.Then, by the pliers 132 of substrate charging crane 126, from notch position aligner 128, take out substrate 154, and turn and install on substrate keeper 130.
Like this, a collection of substrate 154 is being turned and installed to after substrate keeper 130, the substrate keeper 130 that has loaded a plurality of substrates 154 is inserted in the reacting furnace 140 (reaction vessel 140) that is for example set as 600 ℃ of left and right temperature, and by fire door sealing plate 148 by the interior sealing of reacting furnace 140.Then, temperature in stove is warmed up to heat treatment temperature, and from gas introduction tube 160, by gas supply port 156, the gas that is arranged on connecting portion 144 side wall portions, imports path 164 and nozzle 166 imports to processing gas in reaction tube 142.When substrate 154 is heat-treated, substrate 154 is heated to for example design temperature of 1000 ℃.When in order to reach design temperature, regulate heater supply power time, the part using the supply power adjusting apparatus of execution mode as above-mentioned controller 170 is used.
When the heat treatment of substrate 154 finishes, in by stove, greenhouse cooling is after the temperature of for example 600 ℃ of left and right, the substrate keeper 130 of the substrate 154 after supporting hot is processed is from the interior taking-up of reacting furnace 140, the all substrates 154 by substrate keeper 130 supporting cooling during, make substrate keeper 130 in precalculated position standby.Then, when the substrate 154 of the substrate keeper 130 of standby is cooled to predetermined temperature, by substrate charging crane 126, from substrate keeper 130, take out substrates 154, carry and be stored in the empty container 116 being placed on container opener 122.Then, by container conveyance apparatus 118, the container 116 of having received and kept substrate 154 is transported to container shelf 120 or container plummer 114, thereby completes a series of processing.
As mentioned above, according to the supply power adjusting apparatus of execution mode, can access following effect.
Owing to directly being switched the alternating voltage of AC power by IGBT converter, thereby do not need the diode full-wave rectifying circuit of IGBT converter prime, thereby can realize small-sized supply power adjusting apparatus.
For example, although full-wave rectifying circuit also depends on its capacity, in 200A grade, size is approximately 200 (W) * 350 (D) * 100 (H).The overall dimension with the supply power adjusting apparatus of such full-wave rectifying circuit is approximately 600 (W) * 800 (D) * 1200 (H).In the present embodiment, owing to there is no full-wave rectifying circuit, thereby the integral body size of supply power adjusting apparatus can be reduced to 80% of about its size.
In addition, the electromagnetic noise producing in IGBT converter, is suppressed by input side filter circuit, so can prevent that electromagnetic noise from sneaking into AC power.Therefore, can prevent from occurring noise failure in AC power.And, can be suppressed at inductive electromagnetic noise the input cable from AC power to IGBT converter.
In addition, the high fdrequency component containing in the output of IGBT converter is suppressed by outlet side filter circuit, the high fdrequency component in the AC power of the supply heater of therefore can decaying.
In addition, owing to thering is regeneration, with IGBT converter and by the back electromotive force producing beyond IGBT converter, regenerate and return to AC power, therefore can improve the energy efficiency of AC power.Especially, IGBT converter switches action with high-speed high frequency, and the frequency of back electromotive force also correspondingly increases, thereby carries out regenerative power continually, so contribute to very much the raising of energy efficiency.
Owing to having introduced in the FEEDBACK CONTROL of variations in temperature, mains voltage variations is carried out feedfoward control, load variations is carried out to FEEDBACK CONTROL, therefore can provide the control system that temperature stability is good.And, can carry out stable power and control, the convenience of use improves.
Owing to being that zero crossing is controlled, in principle, there is no reactive power, thereby can effectively utilize power, and high efficiency supply power adjusting apparatus can be provided.
Owing to adopting original thermoregulator 9, its output is applied to changeable frequency circuit 15 and exports the grid control signal of IGBT, thereby there is interchangeability with existing system, only change just can change to native system from existing system at an easy rate a little.In addition, can thermoregulator not used to original adjuster yet, and similarly computing function is transplanted in changeable frequency circuit 15 with the situation of power source change or load variations, make thermoregulator be configured to the circuit that a detected temperatures changes.
By adopting high speed switching device, can save power also can be without obtaining lavishly required power.Especially, owing to being used as the IGBT of high-frequency component, thereby temperature-responsive is good, and is suitable for detesting near the heater control of instrumentation circuit of noise.
In addition, in the above-described embodiment, except variations in temperature is controlled, also introduced the control to mains voltage variations and load variations, but also can in variations in temperature is controlled, only to mains voltage variations, control or only load variations be controlled in variations in temperature is controlled.For the former, thereby the change in voltage that can proofread and correct supply power obtains stable power.For the latter, can suppress the load variations of heater.
According to the embodiment of the present invention, the surge current or the high-frequency noise that when the misoperation that can reduce to become use equipment damages and then the high speed of reason that becomes the misoperation of ancillary equipment switches, produce, thereby can the little good sine wave of output distortion.
In addition, the supply power adjusting apparatus 21 of above-mentioned execution mode, can be for having the semiconductor-fabricating device of the reacting furnace being heated by heater.Reacting furnace consists of the reactor of quartz ampoule and the tubular that this quartz ampoule heated from outside.In order to heat this heater, use the supply power adjusting apparatus of execution mode.As used above-mentioned supply power adjusting apparatus in semiconductor-fabricating device, just can access stable heter temperature, therefore can access high performance semiconductor device.
Below, remarks optimal way of the present invention.
First method is a kind of supply power adjusting apparatus, it is characterized in that, comprising: IGBT converter is the AC power corresponding with the frequency of control signal by the AC voltage conversion of AC power, and this AC power is supplied with to heater; Input side filter circuit, is arranged on the input side of above-mentioned IGBT converter, the electromagnetic noise producing for being suppressed at above-mentioned IGBT converter; Outlet side filter circuit 30, is arranged on the outlet side of above-mentioned IGBT converter, for the high fdrequency component that suppresses to contain from the AC power of above-mentioned IGBT converter output; Variations in temperature checkout gear, detects the variations in temperature of above-mentioned heater; Power source change checkout gear detects the power source change of above-mentioned AC power from the alternating voltage of supplying with above-mentioned IGBT converter by above-mentioned AC power; Load variations checkout gear detects load variations from the AC power of supplying with above-mentioned heater by above-mentioned IGBT converter; And frequency varying device, according to each testing result of said temperature change detecting device, above-mentioned power source change checkout gear and above-mentioned load variations checkout gear, calculating should be supplied with the quantity of power of above-mentioned heater, and according to this result of calculation, controls the frequency of the above-mentioned control signal that puts on above-mentioned IGBT converter.
According to the manner, owing to directly being switched the alternating voltage of AC power by IGBT converter, thereby do not need the rectification circuit of IGBT converter prime, thereby can realize small-sized power supply.
In addition, can be suppressed at the electromagnetic noise producing in IGBT converter by input side filter circuit, thereby can prevent that electromagnetic noise from sneaking into AC power.
In addition, by outlet side filter circuit 30, suppress the high fdrequency component containing in the output of IGBT converter, thereby can prevent from containing high fdrequency component in the AC power of supplying with heater.
In addition, by being changed by variations in temperature checkout gear detected temperatures, calculating the quantity of power corresponding with this testing result by frequency varying device, and according to this result of calculation, IGBT converter is carried out to FREQUENCY CONTROL, thereby can to the supply power of heater, carry out FEEDBACK CONTROL accordingly with variations in temperature.Therefore, the temperature of heater can be remained on to predetermined temperature well.
In addition, when AC power changes, this variation shows as the variation of power at the input side of IGBT converter.By detected this power by power source change checkout gear, change, by frequency varying device, calculate the quantity of power corresponding with this testing result and according to this result of calculation, IGBT converter carried out to FREQUENCY CONTROL, thereby can carry out feedfoward control to the supply power for power source change.Therefore, can be suppressed at while carrying out FEEDBACK CONTROL well, because power supply changes and makes the disorder to heter temperature that the supply power amount of heater is changed and produced.
In addition, when load variations, this variation shows as the variation to the power of heater fed.By detected this power by load variations checkout gear, change, by frequency varying device, calculate the quantity of power corresponding with this testing result and according to this result of calculation, IGBT converter carried out to FREQUENCY CONTROL, thereby can carry out FEEDBACK CONTROL to the supply power for load variations.Therefore, can be suppressed at while carrying out FEEDBACK CONTROL well, load changes and makes the control of the supply power amount of heater produce the disorder of the heter temperature that very large disorder occurs because of load variations.
Like this, owing to adopting IGBT converter and having introduced in to the FEEDBACK CONTROL of variations in temperature the feedfoward control of power source change and the FEEDBACK CONTROL to load variations, so temperature stability, extremely good for the stability of power conversion and load variations, thereby can make heter temperature obtain very high stability.In addition, owing to carrying out high speed in IGBT converter, switch action, temperature-responsive is good.And owing to being control without the compensation of phase advance capacitor, the convenience of use also improves.And then owing to forming converter with IGBT, transient response is good especially.And, because the FREQUENCY CONTROL of IGBT is that zero crossing is controlled, can improve the efficiency of power supply.
Second method is another kind of supply power adjusting apparatus, it is characterized in that, above-mentioned IGBT converter has the regeneration IGBT converter that the back electromotive force that the switching action because of this IGBT converter is produced is regenerated and returned to above-mentioned AC power.
Because IGBT converter has regeneration with IGBT converter and using returning to AC power after the back electromotive force regeneration of emitting as heat energy, can improve the energy efficiency of AC power.
Third Way is the supply power adjusting apparatus of first method or second method to be used to the semiconductor-fabricating device of power supply as heater.Owing to thering is the heter temperature of making, obtain the supply power adjusting apparatus of first method or the second method of high stability, thereby can manufacture high performance semiconductor device.
Claims (9)
1. an IGBT transducer (11a) for power, it comprises: prime commutation circuit (IGBT1), this prime commutation circuit has higher level IGBT and the IGBT of subordinate that upper and lower two-stage series connection is laminated; And rear class commutation circuit (IGBT2), this rear class commutation circuit has higher level IGBT and the IGBT of subordinate that upper and lower two-stage series connection is laminated, this rear class commutation circuit and above-mentioned prime commutation circuit are connected in parallel, and the above-mentioned higher level IGBT of above-mentioned prime commutation circuit (IGBT1) and the tie point of the above-mentioned IGBT of subordinate and the above-mentioned higher level IGBT of above-mentioned rear class commutation circuit (IGBT2) and the tie point of the above-mentioned IGBT of subordinate is connected and as output point;
This power is controlled the above-mentioned higher level IGBT of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit and the switching of the above-mentioned IGBT of subordinate by FREQUENCY CONTROL corresponding to the quantity of power with offering load with IGBT transducer, thereby switch from the alternating voltage of AC power output, and adjustment offers the power of above-mentioned load from above-mentioned AC power, and by being connected in parallel of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit, make the electric current that offers above-mentioned load become large.
2. power according to claim 1 IGBT transducer, is characterized in that:
Also comprise rectification circuit,
Utilize this rectification circuit, above-mentioned ac voltage rectifier become to positive half wave and negative half-wave, according to polarity, above-mentioned positive half wave and above-mentioned negative half-wave are given to above-mentioned higher level IGBT and the above-mentioned IGBT of subordinate of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit,
Utilize the above-mentioned higher level IGBT of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit to switch the one in above-mentioned positive half wave and above-mentioned negative half-wave, utilize the above-mentioned IGBT of subordinate of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit to switch another one.
3. according to claim 1 or power claimed in claim 2 IGBT transducer, it is characterized in that:
Also comprise buffer circuit,
Utilize this buffer circuit, the back electromotive force producing when the above-mentioned higher level IGBT in above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit and the above-mentioned IGBT of subordinate close consumes as heat energy.
4. power according to claim 3 IGBT transducer, is characterized in that:
Also there is the fly-wheel diode that above-mentioned higher level IGBT and the above-mentioned IGBT of subordinate with above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit are connected in parallel,
Utilize above-mentioned buffer circuit, the electric current that flows through above-mentioned fly-wheel diode when above-mentioned higher level IGBT and the above-mentioned IGBT of subordinate close is consumed as heat energy.
5. power according to claim 1 IGBT transducer, is characterized in that:
It is the control that utilizes grid control signal that said frequencies is controlled, and this grid control signal has the frequency corresponding with the above-mentioned quantity of power that offers above-mentioned load.
6. a supply power adjusting apparatus, it comprises rectification circuit for power (FRD1), IGBT transducer (11a) for power, rectification circuit (FRD2) and regeneration use IGBT transducer (11b) for regeneration, wherein,
Above-mentioned power rectification circuit, becomes positive half wave and negative half-wave by the ac voltage rectifier of AC power,
Above-mentioned power IGBT transducer, comprising: prime commutation circuit (IGBT1), and this prime commutation circuit has IGBT and the power IGBT of subordinate for higher level's power that upper and lower two-stage series connection is laminated; and rear class commutation circuit (IGBT2), this rear class commutation circuit has IGBT and the power IGBT of subordinate for higher level's power that upper and lower two-stage series connection is laminated, this rear class commutation circuit and above-mentioned prime commutation circuit are connected in parallel, and the above-mentioned higher level IGBT of above-mentioned prime commutation circuit (IGBT1) and the tie point of the above-mentioned IGBT of subordinate and the above-mentioned higher level IGBT of above-mentioned rear class commutation circuit (IGBT2) and the tie point of the above-mentioned IGBT of subordinate is connected and as output point, above-mentioned power is controlled with the switching of IGBT with IGBT and above-mentioned subordinate power above-mentioned higher level's power of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit by FREQUENCY CONTROL corresponding to the quantity of power with offering load with IGBT transducer, with above-mentioned higher level's power of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit, with IGBT, switch the above-mentioned positive half wave of the above-mentioned alternating voltage from being rectified with rectification circuit at above-mentioned power and the one above-mentioned negative half-wave, with the above-mentioned subordinate power of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit, with IGBT, switch another one, thereby adjust the power that offers above-mentioned load from above-mentioned AC power, and by being connected in parallel of above-mentioned prime commutation circuit and above-mentioned rear class commutation circuit, make the electric current that offers above-mentioned load become large
Above-mentioned regeneration rectification circuit, is rectified into positive half wave and negative half-wave by the back electromotive force producing in above-mentioned load-side,
Above-mentioned regeneration IGBT transducer, comprise that having the stacked higher level of upper and lower two-stage series connection regenerates by the commutation circuit of IGBT and the regeneration use IGBT of subordinate, with above-mentioned higher level regeneration, with IGBT, switch in the positive half wave of the above-mentioned back electromotive force that above-mentioned regeneration is rectified with rectification circuit and the one in negative half-wave, with the regeneration of above-mentioned subordinate, with IGBT, switch another one, thereby obtain regenerating power, and this regenerating power is returned to above-mentioned AC power.
7. supply power adjusting apparatus according to claim 6, is characterized in that:
It is the control that utilizes grid control signal that said frequencies is controlled, and this grid control signal has the frequency corresponding with the above-mentioned quantity of power that offers above-mentioned load.
8. power according to claim 1 IGBT transducer, is characterized in that:
It is the control that utilizes grid control signal that said frequencies is controlled, and this grid control signal has constant basic carrier frequency, and has the duty ratio corresponding with the above-mentioned quantity of power that offers above-mentioned load.
9. a semiconductor-fabricating device, has the supply power adjusting apparatus described in claim 6 or 7.
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KR101017653B1 (en) | 2008-11-12 | 2011-02-25 | 세메스 주식회사 | Bake apparatus and substrate treatment apparatus with it |
JP2010287754A (en) * | 2009-06-12 | 2010-12-24 | Shin Etsu Handotai Co Ltd | Method and apparatus for control of heater output at heat treatment furnace, and resistance heating type heat treatment furnace |
JP5567318B2 (en) * | 2009-11-20 | 2014-08-06 | 株式会社国際電気セミコンダクターサービス | Power supply system, substrate processing apparatus, semiconductor manufacturing apparatus, and deterioration diagnosis method |
US8548312B2 (en) * | 2010-02-19 | 2013-10-01 | Applied Materials, Inc. | High efficiency high accuracy heater driver |
CN102135782B (en) * | 2011-02-16 | 2013-06-19 | 北京七星华创电子股份有限公司 | Electrical control system and vertical furnace heating device containing same |
KR101312960B1 (en) * | 2012-08-29 | 2013-10-01 | 삼성중공업 주식회사 | Method for detecting error of dbr unit and recording medium thereof |
DE102014221962A1 (en) * | 2014-10-28 | 2016-04-28 | Robert Bosch Gmbh | Method and device for heating a supply device in connection with an internal combustion engine |
CN104864725A (en) * | 2015-05-17 | 2015-08-26 | 成都中冶节能环保工程有限公司 | Wet protection type coke oven waste heat recovery and power generation system based on power voltage setting circuit |
JP6971199B2 (en) * | 2018-05-31 | 2021-11-24 | 東京エレクトロン株式会社 | Board processing method and board processing equipment |
KR200491236Y1 (en) * | 2019-07-22 | 2020-03-09 | 주식회사 토르 | Heater Temperature Controller |
CN113161574B (en) * | 2020-01-22 | 2024-05-10 | 中国科学院大连化学物理研究所 | Fuel cell heating system and control method thereof |
KR102572807B1 (en) | 2021-06-10 | 2023-08-29 | 경희대학교 산학협력단 | Apparatus and method for controlling temperature uniformity of substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1277486A (en) * | 1999-06-10 | 2000-12-20 | 株式会社I-Hits研究所 | AC voltage regulator |
CN2574298Y (en) * | 2002-09-30 | 2003-09-17 | 杨忠民 | AC chopper frequency-changing speed governing device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234620A (en) * | 1985-04-10 | 1986-10-18 | Nissin Electric Co Ltd | Ac switching circuit |
JP3045301B2 (en) * | 1990-03-07 | 2000-05-29 | 勲 高橋 | Switching element loss recovery circuit |
JPH03296117A (en) * | 1990-04-13 | 1991-12-26 | Tokyo Rikoushiya:Kk | Variable automatic voltage controller |
JPH09218720A (en) * | 1996-02-08 | 1997-08-19 | Ricoh Co Ltd | Ac controller |
US5977530A (en) * | 1997-02-25 | 1999-11-02 | Matsushita Electric Industrial Co., Ltd | Switching power supply for high frequency heating apparatus |
JPH11262264A (en) * | 1998-03-13 | 1999-09-24 | Yaskawa Electric Corp | Power converter |
JP2000293243A (en) * | 1999-04-07 | 2000-10-20 | Mitsubishi Electric Corp | Voltage varying device |
JP2003309994A (en) * | 2002-04-12 | 2003-10-31 | Daikin Ind Ltd | Linear compressor drive device |
KR100434153B1 (en) * | 2002-04-12 | 2004-06-04 | 엘지산전 주식회사 | Hybrid dc electromagnetic contactor |
JP2003309973A (en) * | 2002-04-16 | 2003-10-31 | Kyoto Denkiki Kk | Alternating-current power regulator |
JP2003348843A (en) * | 2002-05-27 | 2003-12-05 | Kyoto Denkiki Kk | Ac power regulator |
JP2004022943A (en) * | 2002-06-19 | 2004-01-22 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment |
JP2004135444A (en) * | 2002-10-11 | 2004-04-30 | Fuji Electric Fa Components & Systems Co Ltd | Stack structure of power converter |
JP2004187360A (en) * | 2002-11-29 | 2004-07-02 | Toshiba Corp | Gate drive circuit of voltage driven switching element, and semiconductor module |
-
2006
- 2006-04-03 CN CN201010546627.9A patent/CN102122892B/en active Active
- 2006-04-03 CN CN2009101710577A patent/CN101902131B/en active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1277486A (en) * | 1999-06-10 | 2000-12-20 | 株式会社I-Hits研究所 | AC voltage regulator |
CN2574298Y (en) * | 2002-09-30 | 2003-09-17 | 杨忠民 | AC chopper frequency-changing speed governing device |
Non-Patent Citations (3)
Title |
---|
JP特开2003-348843A 2003.12.05 |
JP特开2004-22943A 2004.01.22 |
JP特开平9-218720A 1997.08.19 |
Also Published As
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HK1157078A1 (en) | 2012-06-22 |
CN101902131B (en) | 2013-06-26 |
JP5204481B2 (en) | 2013-06-05 |
CN101128972B (en) | 2010-12-29 |
JPWO2006107013A1 (en) | 2008-09-25 |
KR20070102571A (en) | 2007-10-18 |
HK1112536A1 (en) | 2008-09-05 |
CN102122892A (en) | 2011-07-13 |
KR20090042874A (en) | 2009-04-30 |
WO2006107013A1 (en) | 2006-10-12 |
JP2013118385A (en) | 2013-06-13 |
JP5727450B2 (en) | 2015-06-03 |
KR100966375B1 (en) | 2010-06-28 |
KR100940306B1 (en) | 2010-02-05 |
CN101128972A (en) | 2008-02-20 |
CN101902131A (en) | 2010-12-01 |
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